Riviere J.C. (ed.), Myhra S. (ed.) — Handbook of Surface and Interface Analysis :: Электронная библиотека попечительского совета мехмата МГУ

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Riviere J.C. (ed.), Myhra S. (ed.) — Handbook of Surface and Interface Analysis

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Название: Handbook of Surface and Interface Analysis

Авторы: Riviere J.C. (ed.), Myhra S. (ed.)

Аннотация:

Integrating advances in instrumentation and methods, this work offers an approach to solving problems in surface and interface analysis, beginning with a particular problem and then explaining the most rational and efficient route to a solution. The book discusses electron optical and scanned probe microscopy, high spatial resolution imaging and synchrotron-based techniques. It emphasizes problem-solving for different classes of materials and material function.

Язык:

Рубрика: Физика/

Статус предметного указателя: Готов указатель с номерами страниц

ed2k: ed2k stats

Издание: 1st edition

Год издания: 1998

Количество страниц: 968

Добавлена в каталог: 16.11.2009

Операции: Положить на полку | Скопировать ссылку для форума | Скопировать ID

Предметный указатель

Ga, AES LMM spectra in InGaAsP      506
Gaussian peak shape      198—199
Gausso — Lorentzian function      150 165 168 175 623 625—628
Gausso — Lorentzian function, FWHM      175
Gausso — Lorentzian function, in peak synthesis      328
GDOES      257
GDOES, advantages      282
GDOES, characteristics      258—259 279—280
GDOES, depth profile      281
GDOES, depth resolution      282
GDOES, instrumentation      279—280
GDOES, operation      279
GDOES, quantification      279—280
GDOES, recent developments      280
GDOES, strengths and weaknesses      282
Ge 3d peak synthesis      325—326
Ge/Si double layer, depth profile      306
GIXRD, characteristics      41
GIXRD, corrosion      667
GIXRD, description      360 610—611
Glasses, adsorption      590—593
Glasses, adsorption, contact angle      590
Glasses, adsorption, hydrophobic      590
Glasses, adsorption, information from ARXPS      591—593
Glasses, adsorption, information from FTIR      590
Glasses, adsorption, long-chain alcohols      590
Glasses, analysis strategy      549
Glasses, analysis strategy, chemical analysis      550
Glasses, analysis strategy, physical imaging      548
Glasses, analysis strategy, structural analysis      548—550
Glasses, combined techniques      548
Glasses, depth profiles      589
Glasses, depth profiles, surface charging problems      589
Glasses, information requirements      546—547
Glasses, surface characterisation requirements      543—544
Glasses, surface composition      586—589
Glasses, surface composition, depletion of surface elements      588
Glasses, surface composition, difference from bulk      588
Glasses, surface composition, E-glass by XPS      588
Glasses, surface composition, structural constituents      586
Glasses, surface features      543—544
Glasses, surface modifications      596—597
Glasses, surface modifications, overlayer thickness from XPS      596
Glasses, surface modifications, silane and siloxane adsorption      596—597
Glasses, surface reactions      591 594 596
Glasses, surface reactions, information from      596
Glasses, surface reactions, information from combined techniques      591
Glasses, surface reactions, information from diffraction techniques      596
Glasses, surface reactions, leaching, hydrolysis, transformation      591
Glasses, surface reactions, SIMS profiles from waste glass      595
Glasses, surface reactions, waste glass composition      594
Glasses, surface sites      589
Glasses, surface sites, information from AFM      589
Glasses, surface sites, information from combined techniques      589
Grain boundaries, analysis by      450 471 473—477
Grain boundaries, analysis by AES      450 459—464 471—472
Grain boundaries, analysis by AES, monatomic layer      461
Grain boundaries, analysis by AES, quantification      461 463
Grain boundaries, analysis by atom probe, Astroloy      477—478
Grain boundaries, analysis by autoradiography      458
Grain boundaries, analysis by autoradiography, B in S/S      458
Grain boundaries, analysis by DSIMS      457
Grain boundaries, analysis by DSIMS, C map      457
Grain boundaries, analysis by DSIMS, Monel 400      670
Grain boundaries, analysis by EDS      450 474 475
Grain boundaries, analysis by PEELS      450 473—474
Grain boundaries, analysis by TEM, EDS      474—475
Grain boundaries, analysis by TEM, FEGSTEM      473—474 476
Grain boundaries, analysis by TEM, grain boundary composition      474—475
Grain boundaries, analysis by TEM, PEELS      473—474
Grain boundaries, analysis by TEM, specimen preparation      472—473
Grain boundaries, analysis by XPS      465 569—570
Grain boundaries, analysis by XPS, Sn 3d spectrum      467
Grain boundaries, analysis by XPS, Sn map      466
Grain boundaries, cavities      463
Grain boundaries, exposure by impact fracture      459 461
Grain boundaries, exposure by impact fracture, fracture stage      460
Grain boundaries, exposure by impact fracture, fracture surface      461
Grain boundaries, exposure by impact fracture, specimen preparation      461
Grain boundaries, exposure by impact fracture, vacuum conditions      460
Grain boundaries, exposure by tensile fracture      468 471
Grain boundaries, exposure by tensile fracture, fracture stage      469
Grain boundaries, exposure by tensile fracture, SEM images      470
Grain boundaries, in $Pt_{3}Sn$ , SEM and SAM      120
Grain boundaries, particles      459 463
Grain boundaries, SAM images, P, Sn      463—464
Grain boundaries, segregation      448—481
Grain boundaries, segregation, analysis sequence      454 455
Grain boundaries, segregation, atomic jump frequency      454
Grain boundaries, segregation, atomic size      454
Grain boundaries, segregation, atomic solubility      452 153
Grain boundaries, segregation, catastrophic consequences      447 448
Grain boundaries, segregation, chemical etching      455 456
Grain boundaries, segregation, diffusion theory      450—452
Grain boundaries, segregation, enrichment      452 153 471 172 474
Grain boundaries, segregation, Gibbs adsorption      451
Grain boundaries, segregation, inverse Kirkendall effect      454 471
Grain boundaries, segregation, ion profiling      452 453
Grain boundaries, segregation, irradiation effects      454 471 472
Grain boundaries, segregation, McLean equation      451
Grain boundaries, segregation, specimen preparation      455—457
Grain boundaries, segregation, trace elements      448 449
Grain boundaries, SEM images      463—464 470
H (hydrogen), detection by ESD      895—896
H (hydrogen), in implantation profile      355
H (hydrogen), influence on Auger peak shapes      106
HEBS      370
Hifax, effect of aging      242
Hifax, SSIMS spectrum      242
High Resolution TEM (HRTEM)      42
High Resolution TEM (HRTEM), characteristics High Resolution TEM (HRTEM), implanted layers      360
High Resolution TEM (HRTEM), tribology      707 709
High Resolution TEM (HRTEM), tribology, wear particles      736—737
HREELS, comparison with RAIRS      900—901
HREELS, description      898—899
HREELS, dipole scattering      899
HREELS, dipole scattering, selection rules      899
HREELS, energy resolution      899—901
HREELS, impact scattering      899
HREELS, instrumental shielding requirements      899
HREELS, low primary energies      898—899
HREELS, oxidation of Ga      508
HREELS, spectrum of cyclohexane on W(110)      900—901
HREELS, spectrum of cyclohexane on W(110) gas phase comparison      900
HREELS, tribology      725
Hydrated species, $SiO_{2}$ , interpretation      524
Hydrated species, $SiO_{2}$ , peak energies      516—517
Hydrated species, $SiO_{2}$ , Si LVV broadening      524
Hydrated species, $SiO_{2}$ , use of SRPS      524
Hydrogen charging, cathodic, in acid      465 467—468
Hydrogen charging, hydrogen diffusion      468
Hydrogen charging, induction of fracture      450 465 468
Hydrogen charging, molten salts      468
Hydroxyl group, $OH^{-}$ in O 1s spectrum      489
I/methanol solution, use in removal of metal to expose buried interface      809—810
ICP, Roman lead pipe      836 839 852
ICP, Roman leaded bronzes      857—858
Imaging XPS (iXPS)      90—91 200—201 465—466 492 795 797
Imaging XPS (iXPS), characteristics      40
Imaging XPS (iXPS), spatial resolution      551
Imaging XPS (iXPS), use in analysis of minerals, ceramics and glasses      551
Impact fracture      459—461 468—470
Impact fracture, fracture stage      459—460
Impact fracture, fracture surface      461
Impact fracture, fracture surface, ductile      460
Impact fracture, fracture surface, intergranular      460
Impact fracture, specimen preparation      459
Impact fracture, vacuum conditions      459
Implanted layers, characterisation methods      355 357—360
Implanted layers, characterisation methods, depth resolutions      358

Implanted layers, characterisation methods, ERDA      358
Implanted layers, characterisation methods, NRA      358
Implanted layers, characterisation methods, RBS      358—359
Implanted layers, characterisation methods, requirements      357
Implanted layers, characteristics      357
Implanted layers, medical prostheses      369—377
Implanted layers, medical prostheses, co-implantation      374 376
Implanted layers, medical prostheses, corrosion behaviour      372—374 376
Implanted layers, medical prostheses, electrochemical measurements      370 373
Implanted layers, medical prostheses, excessive wear      369 376
Implanted layers, medical prostheses, hardness measurements      370—371
Implanted layers, medical prostheses, hip and knee joints      369
Implanted layers, medical prostheses, implant profile      374
Implanted layers, medical prostheses, improved wear      371 376
Implanted layers, medical prostheses, N, C, O implantation      370—376
Implanted layers, medical prostheses, polyethylene      369—373 376
Implanted layers, medical prostheses, Ti6Al4V alloy      369—376
Implanted layers, medical prostheses, wear dependence on implant profile      374
Implanted layers, medical prostheses, wear measurement methods      370
Implanted layers, medical prostheses, XPS analyses      374
Implanted layers, medical prostheses, XRD analyses      374 375
Implanted layers, medical prostheses, Y implantation      370 376
Implanted layers, modification of Cr layers      377—381
Implanted layers, modification of Cr layers, AES analysis      377—381
Implanted layers, modification of Cr layers, amorphous bright Cr deposition (ABCD)      377
Implanted layers, modification of Cr layers, composition      378—381
Implanted layers, modification of Cr layers, CrC, CrN formation      379
Implanted layers, modification of Cr layers, depth profiling      377—380
Implanted layers, modification of Cr layers, electrodeposition      377
Implanted layers, modification of Cr layers, hardness measurement      377—378
Implanted layers, modification of Cr layers, implantation profile      378—380
Implanted layers, modification of Cr layers, ISS analysis      377
Implanted layers, modification of Cr layers, layer preparation      377
Implanted layers, modification of Cr layers, N implantation      377—381
Implanted layers, modification of Cr layers, XPS analysis      377
In (indium) 3d XPS spectra, from Nb(Pb — In) junction      498
In (indium) 3d XPS spectra, peak energies      499
In (indium), AES MNN spectra in InGaAsP      507
InGaAsP, passivation by $NO_{2}$       500—509
InGaAsP, passivation by $NO_{2}$ , AES quantification      502
InGaAsP, passivation by $NO_{2}$ , ELS analysis      508
InGaAsP, passivation by $NO_{2}$ , interpretation      508—509
InGaAsP, passivation by $NO_{2}$ , O coverage      501—502
InGaAsP, passivation by $NO_{2}$ , SAM analysis      503—505
InGaAsP, passivation by $NO_{2}$ , surface analysis requirements      501
Inhomogeneity, revealed by ARAES      116—117
InP on $SiO_{2}$ , thin film, contaminant layer      531
InP on $SiO_{2}$ , thin film, description      525
InP on $SiO_{2}$ , thin film, interfaces      526
InP on $SiO_{2}$ , thin film, interpretation      529—535
InP on $SiO_{2}$ , thin film, ion bombardment damage      527
InP on $SiO_{2}$ , thin film, loss spectrum      533
InP on $SiO_{2}$ , thin film, material      525
InP on $SiO_{2}$ , thin film, SAM images      530—531 533—536
InP on $SiO_{2}$ , thin film, SAM linescans      531
InP on $SiO_{2}$ , thin film, SAM point analyses      526—527
InP on $SiO_{2}$ , thin film, scanning ELS      532 536
InP on $SiO_{2}$ , thin film, spatial resolution      525
InP on $SiO_{2}$ , thin film, surface analysis requirements      486 525
Interband transitions in ELS      507—508
Interfaces, adhesive, buried      808—810
Interfaces, adhesive, buried, $SiO_{2}$ on Si      515
Interfaces, adhesive, buried, corrosion film, location by AES depth profile      664—665
Interfaces, adhesive, buried, depth      808
Interfaces, adhesive, buried, exposure by removal of polymer with N-methyl pyrrolidone      809
Interfaces, adhesive, buried, exposure by removal of substrate with I/methanol solution      810
Interfaces, adhesive, buried, Fe(II) in interface      810
Interfaces, adhesive, buried, fibre/matrix, buried      636—638
Interfaces, adhesive, buried, fibre/matrix, buried, method of examination      636—638
Interfaces, adhesive, buried, fibre/matrix, buried, spectrum subtraction technique      637—639
Interfaces, adhesive, buried, inappropriateness of ion profiling      808
Interfaces, adhesive, buried, InP on $SiO_{2}$       526
Interfaces, adhesive, buried, InP on $SiO_{2}$ , access by surface analysis      526
Interfaces, adhesive, buried, Josephson junction      494
Interfaces, adhesive, buried, Josephson junction, access by surface analysis      494
Interfaces, adhesive, buried, mechanical sectioning      810
Interfaces, adhesive, buried, thin film models      787 810
Interfaces, adhesive, buried, thin films, characteristics      299—300
Interfaces, adhesive, buried, width      808
Interfaces, adhesive, buried, X-ray transparent thin films on metal substrates      810
Ion beam assisted deposition(IBAD)      298
Ion beam assisted deposition(IBAD), $MoS_{2}$ coatings on steel      732
Ion bombardment (low energy), effects on $In_{2}O_{3}$       496 499
Ion bombardment (low energy), effects on cermets      329
Ion bombardment (low energy), effects on InP on $SiO_{2}$ Ion bombardment (low energy), damage in $SiO_{2}$       527
Ion bombardment (low energy), effects on oxides      325—332
Ion bombardment (low energy), effects on PbO      498
Ion bombardment (low energy), effects on polymers      334 340 752—753
Ion bombardment (low energy), effects on Si suboxides      330—332 511
Ion bombardment (low energy), effects on Si suboxides, Auger parameter $\alpha^{*}$       331 512—513
Ion bombardment (low energy), effects on Si suboxides, interpretation      521 523—524
Ion bombardment (low energy), effects on Si suboxides, ion energy dependence      512
Ion bombardment (low energy), effects on Si suboxides, O 1s energies      512
Ion bombardment (low energy), effects on Si suboxides, O KVV energies      512
Ion bombardment (low energy), effects on Si suboxides, O/Si ratios      516
Ion bombardment (low energy), effects on Si suboxides, peak positions      512
Ion bombardment (low energy), effects on Si suboxides, peak widths      512 514 515
Ion bombardment (low energy), effects on Si suboxides, Si 2p energies      512
Ion bombardment (low energy), effects on Si suboxides, Si 2s energies      512
Ion bombardment (low energy), effects on Si suboxides, Si KLL energies      512 523
Ion bombardment (low energy), effects on Si suboxides, surface specificity      513—515
Ion bombardment (low energy), effects on Si suboxides, XAES analysis      511—512 521
Ion bombardment (low energy), effects on Si suboxides, XPS analysis      511—513
Ion bombardment (low energy), effects on TiN      315—324
Ion etching, TEM specimens      473
Ion etching, waveguide structures, beam splitter device      383—386
Ion etching, waveguide structures, buried waveguide      386—387
Ion etching, waveguide structures, divider      384 386
Ion etching, waveguide structures, embossing      382—383 387
Ion etching, waveguide structures, fibre optics      381
Ion etching, waveguide structures, fibre-chip coupling      386—387
Ion etching, waveguide structures, index of refraction      381 386
Ion etching, waveguide structures, ion irradiation      381—387
Ion etching, waveguide structures, layer depths      386—387
Ion etching, waveguide structures, light irradiation      381
Ion etching, waveguide structures, masking      383
Ion etching, waveguide structures, polymeric materials      381
Ion guns, duoplasmatron      267
Ion guns, electron impact      267
Ion guns, LMIG      267
Ion guns, Penning discharge      267
Ion guns, TELETWIN      303—304
Ion guns, TELETWIN, angle of incidence      304
Ion guns, TELETWIN, sputtering rate      304
Ion implantation (high energy), applications      368—387
Ion implantation (high energy), applications, medical protheses      369—376
Ion implantation (high energy), applications, modification of Cr layers      377—381
Ion implantation (high energy), applications, surface modifications      368
Ion implantation (high energy), description      347
Ion implantation (high energy), physical processes      350—353
Ion implantation (high energy), physical processes, collision cascade      210 227 240 350—351
Ion implantation (high energy), physical processes, energy loss mechanisms      350—352
Ion implantation (high energy), physical processes, energy losses, dependence on ion energy      351—352
Ion implantation (high energy), physical processes, energy losses, dependence on ion mass      351—352
Ion implantation (high energy), physical processes, implantation range      353
Ion implantation (high energy), physical processes, instrumentation      354 357
Ion implantation (high energy), physical processes, ion depth distribution      351
Ion implantation (high energy), physical processes, projected range      350
Ion implantation (high energy), physical processes, simulation programs      352—353
Ion implantation (high energy), physical processes, sources      354 357
Ion implantation (high energy), physical processes, sputter yield      350
Ion implantation (low energy), surface film preparation      299—300
Ion plating, for thin film deposition      298
Ion sources, energy distribution      127—128
Ion sources, ion implantation      354 357
Ion sources, ion implantation, CHORDIS      354
Ion sources, ion implantation, Freeman      354
Ion sources, ion implantation, mass-filtered      354
Ion sources, ion implantation, MEVVA      354
Ion sources, ion implantation, plasma      355 357

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