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| Morkoc H. — Advanced semiconductor and organic nano-techniques |
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| Предметный указатель |
Unibond 329—330
Unipolar semiconductor laser 53
Universal gate 456
Universal gate, reversible 456—458
Universal gate, three-bit 466
Universal quantum gate 461 477
Unlimited device geometry 510
Unsubstituted quaterthiophene, single crystal, X-ray diffraction data 254
Urea, detection of 231
UV, Blue and Green LED Performance Fabricated in Competing Materials 31
UV, Lasers 43
Vacuum, deposited organic semiconductor films 206—207
Vacuum, level shifts at metal/organic semiconductor interface 217
Valence band (VB) 31
Valence band (VB) or HOMO 216 218
Valine 359
Van der Pauw geometry 67
van der Waals interactions 57
Van der Waals — London and electrostatic forces 279
Vapor-phase epitaxy 53 65
VCSELs see "Vertical cavity surface emitting lasers" 397
Vertical cavity surface emitting lasers (VCSELs) 45—49 382 386
Vertical cavity surface emitting lasers (VCSELs) with quantum dot (QD) active layer, schematic representation 49
Vertical cavity surface emitting lasers (VCSELs),  GaAs-based 407
Vertical cavity surface emitting lasers (VCSELs), device spectrum from 48
Vertical cavity surface emitting lasers (VCSELs), modern device, schematic 46—47
Vertical cavity surface emitting lasers (VCSELs), structures 48 408
Vertical cavity, device, light output vs current for 385
Vertical cavity, emitters 379
Vertical cavity, LEDs 386
Vertical geometry diodes 158
Vertical geometry diodes with semi-transparent Pd Schottky barrier contacts 161
Vertical geometry diodes, Schottky 163
Vertical transistors 192
Vibrating probe, technique, non-invasive 332
Vibrating probe, ultrasensitive 328
Vibronic structure 260
Violet lasers 43
Violet, InGaN QW lasers 368
Violet, LED, schematic diagram of vertical cavity 383
Violet, optically pumped VCSEL device, average input vs. output power 382
VLSI technology 225
Volume inversion 359
Wafer 126 129
Wafer, 300-mm, fabrication facilities 169
Wafer, bonding (WB) 328
Wafer, characterization 336—337
Watson — Crick, complement of sequence 379
Watson — Crick, complementary pairs 372 375
| Watson — Crick, complementary pairs, rules 348
Wave function, collapse of 489
Wavefunction spectroscopy 35—41
waveguide 45
Waveguides 52
Waveguiding 52
Waveguiding, structures 38
Wavelength, extension into UV 390—397
Wet chemical etching 67 211 260 286 497
Wetting layer 371—372 375
Wetting layer (WL) 3 17
Wetting layer (WL), continuum 40
Wetting layer, influence 381
White emission 276—280
Wide bandgap, emitter transistor 132
Wide bandgap, quantum well (QW) heterostructures synthesis of 345
Wide bandgap, semiconductors 345
Wide bandgap, semiconductors, material and physical properties of 347—350
Wide gap, GaN, ZnSe, and GaAs, key physical parameters of 350—357
Wide gap, III-nitrides, control of electrical properties within 395
Wide gap, InGaN and AlInGaN blue and near-UV light emitter materials 398
Wide gap, ZnCdSe QW diode lasers 370
WKB approximation 250
WKB approximation, 1D 256
Word and sense line arrangements 423
Write heads 438
Wurtzite, zincblende, and rocksalt structures 54
Wurtzite-GaN (WZ-GaN) 56 74
X band 21
X band power amplifiers 123
X-ray diffractograms, schematic representations of structural order 223
X-ray photoemission spectroscopy (XPS) 58 247
X-ray, diffraction crystallography of a thiol 56
X-ray, lithography 281
X-ray, water-mediated electrochemical decomposition 201
Xylene-dithiol SAM 55
Yeast 304
Yeast, genome, open reading frame (ORF) of 356
Yeast, wild-type 355—356
Zeeman, effects 481
Zeeman, splitting 463—464 475 477 498
Zener tunneling 256
Zero dimensional energy spectrum 371
Zirconium-silicate gate dielectric 190
ZnCdSe QW lasers 376
ZnSe-based QW heterostructures 346
Zone melting recrystallization (ZMR) 331
Zone melting recrystallization (ZMR), methods, three-dimensional circuits 334
[0001] grown N-MODFET, electron density distribution in channel 101
[2] Catanane type molecules 63
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