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Авторизация |
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Поиск по указателям |
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Morkoc H. — Advanced semiconductor and organic nano-techniques |
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Предметный указатель |
Scaling, principal challenges to continued scaling 182
SCALPEL system 8
Scanned gate microscopy (SGM) 313
Scanned probes 2
Scanned probes, nanolithography 206
Scanning electrochemical microscopy (SECM) 449
Scanning electron microscopy (SEM) 2 100 287 408
Scanning electron microscopy (SEM), LRM55 astroglial cells 87
Scanning near-field optical microscopy (SNOM) 35
Scanning probe microscope based anodization techniques 305
Scanning probe microscopy (SPM) 442—450
Scanning Probe Microscopy (SPM), electron exposure 210
Scanning Probe Microscopy (SPM), lithography technique based on 81
Scanning Probe Microscopy (SPM), techniques 449
Scanning tip techniques 101
Scanning tunneling microscope, diagram of 443
Scanning tunneling microscopy (STM) 93 129 189 195 443—444
Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) techniques 8
Scanning tunneling microscopy (STM) for conducting AFM manipulation 200
Scanning tunneling microscopy (STM), chemically related processes 200—201
Scanning tunneling microscopy (STM), cross-linking or bond breaking induced by 199
Scanning tunneling microscopy (STM), electron-stimulated processes 199
Scanning tunneling microscopy (STM), images, lithography 202 209
Scanning tunneling microscopy (STM), images, of A1 nanostructure 205
Scanning tunneling microscopy (STM), images, of controlled oxide removal 200
Scanning tunneling microscopy (STM), images, of depassivated lines 205
Scanning tunneling microscopy (STM), nanolithography 190
Scanning tunneling microscopy (STM), patterning, of hydrogen-terminated silicon 203—204
Scanning tunneling microscopy (STM), techniques 126 190
Scanning tunneling microscopy (STM), tip 191—192
Scanning tunneling microscopy (STM), using for atomic modification of semiconductor surfaces 194—196
Scanning tunneling spectroscopy (STS) of isolated QDs 35
Scanning tunneling spectroscopy (STS), measurements of QDs grown on p-type substrates 40
Scanning tunnelling microscopy (STM) 2—3 38
Scanning tunnelling microscopy (STM), operating in ultra-high vacuum (UHV) 43
Scattering force 428
SCF, description 20
SCF, procedure, illustration of 13
SCF, quantum chemical methods and NEGF method, comparison 26
Schoenflies notation 60
Schottky barrier 98 327
Schottky barrier for gates 110—113
Schottky barrier, detectors 149 155
Schottky barrier, devices, interfacial trapping 165
Schottky barrier, diodes fabricated on GaN growth on Si(111) substrates by gas-source molecular beam epitaxy 162
Schottky barrier, height in n-type GaN 73
Schottky barrier, related processes for GaN-based devices 110
Schottky barrier, width in ID nanotube 320
Schottky diodes on GaN and mechanisms leading to excess leakage currents 159
Schottky diodes, current 109
Schottky diodes, current-voltage characteristics of 160—161
Schottky diodes, fabricated on GaN epitaxial layers, current-voltage characteristics of 159
Schottky diodes, prepared on GaN/Si(111) noise power density 164
Schottky diodes, structure, schematic cross-section of 158
Schottky diodes, tunneling in 163
Schottky mesa 158
Schottky — Mott limit for inorganic semiconductor interfaces 217
Schottky, barriers 21 58 74—76
Schottky, barriers, at channel interfaces 256
Schottky, collectors 25
Schottky, conduction 147
Schottky, emission 133
Schroedinger equation for multi-particle electron wavefunction 247
Schroedinger — Poisson solution 103
SDT, device 432
SDT, memories 431
Seed window 11
SEL transistor process 80
Selectins 257
Self-aligned-gate (SAG) process 151
Self-aligned-gate (SAG) process, NMOS 152
Self-aligned-gate (SAG) process, transistor 156
Self-assembled monolayer (SAM) active region 63
Self-assembled monolayer field effect transistor (SAMFET) 64
Self-assembled monolayer field effect transistor (SAMFET), structure, schematic of 66
Self-assembled monolayer field effect transistor (SAMFET), vertical, structures for 65
Self-assembled monolayers (SAMs) 45—46 54 209 517
Self-assembled monolayers (SAMs) of alkyl- and aminosilanes 258
Self-assembled monolayers (SAMs) of conjugated polymers 1
Self-assembled monolayers (SAMs), deposition of 265
Self-assembled monolayers (SAMs), film 45
Self-assembled monolayers (SAMs), formation 55 57
Self-assembled monolayers (SAMs), intrinsic error-correction advantage 45
Self-assembled monolayers (SAMs), surface 128
Self-assembled thiol-terminated (but asymmetric) oligomers 135
Self-assembledmonolayer(SAM) 218 230 232
Self-assembledmonolayer(SAM), amine-terminated 333
self-assembly 44
Self-consistent potential 25—27
Self-energy 24—25
Self-evolving neuromorphic networks 76 278
Semi-empirical Hartree — Fock technique 258
Semiconducting organic materials common 194—195
Semiconducting single-walled nanotubes (SWNT) 294 312—316
Semiconducting single-walled nanotubes (SWNT), at room temperature EFM and SGM measurements of 313
Semiconducting single-walled nanotubes (SWNT), channel 317
Semiconducting single-walled nanotubes (SWNT), devices 318
Semiconducting single-walled nanotubes (SWNT), devices, from laser ablation derived material 318
Semiconducting single-walled nanotubes (SWNT), devices, SGM image of 313
Semiconducting single-walled nanotubes (SWNT), grown via CVD 315
Semiconducting single-walled nanotubes (SWNT), high mobility of 320
Semiconductivity in organics, origin of 193
Semiconductor Equipment and Materials International (SEMI) association 173
Semiconductor Industry Association (SIA) 8 173
Semiconductor Industry Association (SIA), National Technology Roadmap (1994) 452
Semiconductor parameter analyzer (SPA) 131
Semiconductor quantum dots, engineering the electronic structure and the optical properties of 1
Semiconductor Research Corporation (SRC) 173 412
Semiconductor, Bloch equations 375
Semiconductor, heterostructures 1
Semiconductor, industry 4 107 161—172
Semiconductor, industry, collaboration 173—174
Semiconductor, laser 37—38 43 54
Semiconductor, laser, applications 39
Semiconductor, nanowires 335—336
Semiconductor, nitrides 45 51
Semiconductor, products and markets 171—172
Semiconductor, R&D efforts time distribution for 193
Semiconductor, single electron FETs 77
Semiconductor, technology 93
Semiconductor, technology, challenges in materials and processing 183
Semiconductor, technology, R&D investment 193
Semiconductor-based computers 76
Semiconductor-based high-frequency amplifiers 136
Semiconductor-based photodetectors 148
Semiconductor-based photodetectors, performance of 154
Semiconductors, devices 53
Semiconductors, fabrication techniques, application to biological studies 289
Semiconductors, fabrication techniques, conventional 509
Semimetallic nature of graphene 306
Sense and word field, combination of 417
Sense circuit for molecular memory cell, diagram of 179
Sense, line structure, experimental 428
Sensing devices 90
Separation by implanted oxygen (SIMOX) technology and techniques 10 330—331
Separation by implanted oxygen (SIMOX) technology and techniques, devices 354
Separation by implanted oxygen (SIMOX) technology and techniques, wafer 78
SET FET hybrid memories 281
SET FET hybrid memories, density of 282
SET FET hybridization 282
SET-based circuits 275
Sets see "Single electron transistor"
Seven-junction pump, schematics of 314
Shallow donors 284
Sheet carrier concentration 78 82 86
Sheet carrier concentration of undoped MODFET structure 83
Shockley — Read — Hall (SRH) recombination current 111
Shor's algorithm 452
Shor's algorithm for prime factorization 81
Short channel 9
| Short channel, characteristics 234
Short channel, effects 11—12 230
Short channel, effects, and hot-carrier effects 349—355
Short channel, MOSFET 235
Short channel, MOSFET, 2D effects 218
Short wavelength III-nitride lasers 345—346
Short, ID tunnel junction array 279
Short-wavelength limit 188
SiC and sapphire substrates 53 65
SiC, MESFET 126
SiC-coated devices, implanting 90
Sidewall functionalization 333
SiGe HBTs 26
Signal information transduction, storage, and processing 85
Signal transduction in biological systems 75
Silica, colloidal 427
Silica, fiber 238
Silicon 275
Silicon (Si), homojunction bipolar transistors 135
Silicon (Si), metal semiconductor FET (MESFET) 125
Silicon (Si), MOSFETs 294 314 316
Silicon (Si), MOSFETs, and GaAs, SiC, and GaN FETs, simulated and experimental RF power density data 126
Silicon (Si), MOSFETs, and Ge, and GaAs, inorganic semiconductors 195
Silicon (Si), MOSFETs, RF, commercial 125
Silicon, crystalline 208
Silicon, dioxide 150—151 299
Silicon, dioxide, film 206
Silicon, electronics revolution 4—14
Silicon, FET side-gated 208
Silicon, germanium () MODFET structures 20
Silicon, MOS devices, functional 5
Silicon, MOSFET, scaling of 290
Silicon, nitrides 127 254
Silicon, porous 90
Silicon, transistors, commercial 148—149
Silicon, wafer 81 165
Silicon-based array 88
Silicon-based FETs 78
Silicon-insulator-silicon (SIS) capacitor 337
Silicon-on-insulator (SOI), "enhanced" PC processors 332
Silicon-on-insulator (SOI), area 10
Silicon-on-insulator (SOI), circuits dedicated libraries for design 327
Silicon-on-insulator (SOI), dedicated CAD libraries 362
Silicon-on-insulator (SOI), devices 189
Silicon-on-insulator (SOI), devices, and circuits 332—335
Silicon-on-insulator (SOI), devices, HCE in 353
Silicon-on-insulator (SOI), devices, innovative 333—335
Silicon-on-insulator (SOI), materials 331
Silicon-on-insulator (SOI), MOSFETs 327 340 348 361
Silicon-on-insulator (SOI), MOSFETs, capacitors 338
Silicon-on-insulator (SOI), MOSFETs, defect coupling 346
Silicon-on-insulator (SOI), MOSFETs, degradation processes of 353
Silicon-on-insulator (SOI), MOSFETs, dual-source 350
Silicon-on-insulator (SOI), MOSFETs, fully depleted 341—347
Silicon-on-insulator (SOI), MOSFETs, partially depleted 347—349
Silicon-on-insulator (SOI), MOSFETs, scaling trends 351—352
Silicon-on-insulator (SOI), MOSFETs, self-heating 346
Silicon-on-insulator (SOI), MOSFETs, subthreshold slope 343—344
Silicon-on-insulator (SOI), MOSFETs, threshold voltage 342—343
Silicon-on-insulator (SOI), MOSFETs, volume inversion 346
Silicon-on-insulator (SOI), structures characterization of 335—341
Silicon-on-insulator (SOI), technology 11 325—326
Silicon-on-insulator (SOI), technology, development of 362
Silicon-on-insulator (SOI), technology, merits of 327
Silicon-on-insulator (SOI), transistors, ultimate 355—361
Silicon-on-insulator (SOI), wafers 327
Silicon-on-insulator (SOI), wafers, bonding 328—329
Silicon-on-insulator (SOI), wafers, fabrication of 328—332
Silicon-on-insulator (SOI), wafers, mass production of 361
Silicon-on-sapphire (SOS) 10 331
Silicone elastomer (PDMS) 267 270 272 275 280
Silicone elastomer (PDMS), elastomer replicas of microstructured surfaces 265
Silicone elastomer (PDMS), substrates 292
Silicone elastomer polydimethylsiloxane (PDMS) 109
Silver wire connecting two gold electrodes 72
SIMOX see "Separation by implantation of oxygen"
Simple-spin-based quantum inverter 462
SiN passivation, effect on drain characteristics 131
Single charge, pumping, approaches in 315
Single charge, transfer devices 310—315
Single Cooper pair 82
Single Cooper pair box (SCB) 320
Single Cooper pair transistor (SCT) 321
Single Cooper pair, tunneling, basics of 303—305
Single crystals of anthracene 201
Single crystals organic field effect transistors 192
Single dot, scanning tunneling spectroscopy (STS) 35
Single dot, spectroscopy 35—47
Single electron and few electron cells 279—283
single electron transistor (SET) 77—81 239 242 265 290
Single electron transistor (SET), devices, practical limitations 308—309
Single electron transistor (SET), devices, sensitivity to charged impurities 290
Single electron transistor (SET), fabrication issues 305—308
Single electron transistor (SET), integrated circuits 270
Single electron transistor (SET), island 282
Single electron transistor (SET), scaling and implementation 268—271
Single electron tunneling effects 16
Single electron, devices 263—279
Single electron, island 242 270
Single electron, logics 274—276
Single electron, logics, circuits 275
Single electron, manipulation 136
Single electron, memory cells 279
Single electron, parametron 275—276
Single electron, pumps 311
Single electron, theory of 269
Single electron, trap 273—274 287
Single electron, tunneling, applications of 303
Single electron, tunneling, basics of 303—305
Single electron, tunneling, phenomena 263
Single electron, turnstile 273 310
Single fission (SF) 249
Single logically irreversible bit operation 453
Single multiwall nanotube, AFM manipulation of 197
Single photon devices 409
Single- and few-electron integrated circuits 291
Single-device islands 327
Single-electron transistor 208
Single-electron transistor (SET) 307 321—323 see
Single-molecular memories 289
Single-molecule detection 241
Single-molecule-based negative differential resistance (NDR) devices 63
Single-qubit rotations 477
Single-triplet energy splitting 265
Single-walled carbon nanotubes (SWNTs), channel, intrinsic resistance of 316
Single-walled carbon nanotubes (SWNTs), devices 317 305
Single-walled carbon nanotubes (SWNTs), electronic structure of 297 299
Single-walled carbon nanotubes (SWNTs), FETs 318 320
Single-walled carbon nanotubes (SWNTs), gating using an ionic solution 319
Single-walled carbon nanotubes (SWNTs), islands 307—308
Single-walled carbon nanotubes (SWNTs), laser-ablation derived low temperature 314—315
Single-walled carbon nanotubes (SWNTs), quantum dot, transport spectroscopy measurement on 308
Single-walled carbon nanotubes (SWNTs), semiconducting behavior in 312
Single-walled carbon nanotubes (SWNTs), SETs, AFM manipulation technique used to fabricate double-kink 321
Single-walled carbon nanotubes (SWNTs), SETs, capacitance of 321
Single-walled carbon nanotubes (SWNTs), SETs, scaling of 322
Single-walled carbon nanotubes (SWNTs), synthesis of 299—301
Single-walled nanotubes (SWNTs) 57
Single-walled nanotubes (SWNTs), FETs 261
Single-walled nanotubes (SWNTs), junctions, I-V characteristics of 59
Singlet fission 250
Site-directed mutagenesis 124 515
Six-layer model, contour plot of calculated total strain field for 12
Slater type orbitals 22
Small tunnel junctions, symbols of normal metal- and superconductor-based 303—304
Small-signal modeling 107
Smart cruise controls 19
Smart-cut process 329
Smart-cut process, advantages 329
Smoluchowski equation 487
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