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Sedra A.S., Smith K.C. — Microelectronic circuits
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Название: Microelectronic circuits
Авторы: Sedra A.S., Smith K.C.
Аннотация: The book starts with an introduction to the basic concepts of electronics in Chapter 1. Signals, their frequency spectra, and their analog and digital forms are presented. Amplifiers are introduced as circuit building blocks and their various types and models are studied. The basic element of digital electronics, the digital logic inverter, is defined in terms of its voltage-transfer characteristic, and its various implementations using voltage and current switches are discussed. This chapter also establishes some of the terminology and conventions used throughout the text.
The next four chapters are devoted to the study of electronic devices and basic circuits and constitute the bulk of Part I of the text. Chapter 2 deals with operational amplifiers, their terminal characteristics, simple applications, and limitations. We have chosen to discuss the op amp as a circuit building block at this early stage simply because it is easy to deal with and because the student can experiment with op-amp circuits that perform nontrivial tasks with relative ease and with a sense of accomplishment. We have found this approach to be highly motivating to the student. We should point out. however, that pan or all of this chapter can be skipped and studied at a later stage (for instance in conjunction with Chapter 7, Chapter 8, and/or Chapter 9) with no loss of continuity.
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Рубрика: Технология /
Статус предметного указателя: Готов указатель с номерами страниц
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Издание: 5th edition
Год издания: 2004
Количество страниц: 1368
Добавлена в каталог: 08.02.2011
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Предметный указатель
TTL (transistor-transistor logic) circuits 210 505—506 951—952
Tuned amplifiers 40 1141—1152 1163
Tuned amplifiers, autotransformers 1144—1145
Tuned amplifiers, cascode amplifiers 1146—1147
Tuned amplifiers, CC-CB cascade amplifiers 1146—1147
Tuned amplifiers, inductor losses 1143—1144
Tuned amplifiers, LP-to-BP transformations 1149—1150
Tuned amplifiers, maximal flatness 1148—1149
Tuned amplifiers, multiple tuned circuits 1145—1146
Tuned amplifiers, narrow band approximations 1149
Tuned amplifiers, neutralizing effects 1146
Tuned amplifiers, overviews and summaries 1141—1143
Tuned amplifiers, problems 1163
Tuned amplifiers, RFCs 1146
Tuned amplifiers, stagger tuning 1148—1152
Tuned amplifiers, synchronous tuning 1147—1148
Tuned amplifiers, transformers 1144—1145
Tuned circuits 1179—1180
Tuned oscillators 1177—1182 1217—1219
Two-input NAND (not AND) gates 966—967
Two-input NOR (not OR) gates 966
Two-integrator loop technologies 1120—1125
Two-port network parameters B1—B7
Two-port network parameters, characteristics B1—B6
Two-port network parameters, characteristics, equivalent circuit representations B5—B6
Two-port network parameters, characteristics, h parameters B4—B5
Two-port network parameters, characteristics, overviews and summaries B1—B2
Two-port network parameters, characteristics, y parameters B2—B3
Two-port network parameters, characteristics, z parameters B3—B4
Two-port network parameters, overviews and summaries B1
Two-port network parameters, problems B7
Two-stage CMOS op amps 749—757 872—883 941
Uncovered charges 197
Unequal equilibrium 1185—1186
Unilateral amplifiers 301 461
Unilateral models 28—29
Unit prefixes G1—G2
Unity gain 79—80 91 315 488
Unity gain, amplifiers 79—80
Unity gain, bandwidth 91 488
Unity gain, current amplifiers 315
Unsaturated vs. saturated digital circuits 505—507
Varactors 209
Velocities, drift 193—194
Virtual grounds 69—70
Virtual short circuits 69
VLSIs (very large scale integrated circuits), fabrication technologies A1—A14
VLSIs (very large scale integrated circuits), fabrication technologies, BiCMOS processes A9—A10
VLSIs (very large scale integrated circuits), fabrication technologies, capacitors A9
VLSIs (very large scale integrated circuits), fabrication technologies, CVD A3—A4
VLSIs (very large scale integrated circuits), fabrication technologies, diffusion A3
VLSIs (very large scale integrated circuits), fabrication technologies, epitaxial layers A3
VLSIs (very large scale integrated circuits), fabrication technologies, epitaxy A3
VLSIs (very large scale integrated circuits), fabrication technologies, integrated devices A7
VLSIs (very large scale integrated circuits), fabrication technologies, ion implantation A3—A4
VLSIs (very large scale integrated circuits), fabrication technologies, lateral pnp transistors A10—A11
VLSIs (very large scale integrated circuits), fabrication technologies, layouts A12—A14
VLSIs (very large scale integrated circuits), fabrication technologies, LOCOS A7
VLSIs (very large scale integrated circuits), fabrication technologies, metallization A4
VLSIs (very large scale integrated circuits), fabrication technologies, MOSFETs A7—A8
VLSIs (very large scale integrated circuits), fabrication technologies, n well CMOS processes A5—A7
VLSIs (very large scale integrated circuits), fabrication technologies, overviews and summaries A1 A14
VLSIs (very large scale integrated circuits), fabrication technologies, oxidation A2—A3
VLSIs (very large scale integrated circuits), fabrication technologies, p base resistors A11
VLSIs (very large scale integrated circuits), fabrication technologies, packaging A4
VLSIs (very large scale integrated circuits), fabrication technologies, photolithography A4
VLSIs (very large scale integrated circuits), fabrication technologies, pinched-base resistors A11
VLSIs (very large scale integrated circuits), fabrication technologies, pn junction diodes A9
VLSIs (very large scale integrated circuits), fabrication technologies, processes A5—A12
VLSIs (very large scale integrated circuits), fabrication technologies, resistors A8—A9
VLSIs (very large scale integrated circuits), fabrication technologies, SiGe BiCMOS processes A11—A12
VLSIs (very large scale integrated circuits), fabrication technologies, wafer preparation A2
VLSIs (very large scale integrated circuits), overviews and summaries 45—48
Voltage, ac voltage 1209—1210
Voltage, breakdown 152—153
Voltage, built-in voltage 198—199 209
Voltage, common-mode voltage 689—691
Voltage, constant-voltage drop models 157—158 166
Voltage, current-voltage characteristics 205—206 248—262 360—362
Voltage, dc voltage 720—723
Voltage, decay 994
Voltage, differential voltage 691—693 713—714
Voltage, diodes 140—141
Voltage, dividers 51—52
Voltage, doublers 187—190
Voltage, excess gate voltage 239—240
Voltage, followers 79—80
Voltage, offset voltage 98 720—735 738—739
Voltage, output voltage 94 885—886 994
Voltage, regulations 163—165
Voltage, ripple voltage 180
Voltage, sustaining voltage 406
Voltage, swings 885—886
Voltage, thermal voltage 149
Voltage, voltage gain 447
Voltage, VTCs see "VTCs (voltage transfer characteristics)"
VTCs (voltage transfer characteristics), CMOS digital logic inverters 339—342
VTCs (voltage transfer characteristics), derivations 976—979
VTCs (voltage transfer characteristics), digital-logic inverters 504—505
VTCs (voltage transfer characteristics), ECL 1057—1061
VTCs (voltage transfer characteristics), overviews and summaries 41—42
VTCs (voltage transfer characteristics), switches 272—273
Wafer preparation A2
waveforms 1165—1228 see
Weak avalanches 260
Weighted summer circuits 75—77
Wide swing current mirrors 892—893
Widlar current sources 653—656
Width of depletion regions 209
Wien-bridge oscillators 1171—1174 1215—1217
Wilson current mirrors 651—652
Wilson mirrors 651—653
Wilson MOS mirrors 652—653
Windings 174
Wired OR capabilities 1066
Word lines 1029
XOR (exclusive OR) logic functions 969—970
Yparameters B2—B3
Zener (breakdown) diodes 167—171 187 213
zeros 1088 E2
Zones, transmission 1107—1108
Zparameters B3—B4
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