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| Ïîèñê ïî óêàçàòåëÿì |
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| Plummer J.D., Deal M.D., Griffin P.B. — Silicon VLSI Technology: Fundamentals, Practice, and Modeling |
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| Ïðåäìåòíûé óêàçàòåëü |
"Knock on" use of term 396
 693
 interface changes 332—357
 growth and oxidation kinetics 347—350
 deposition 567 568 716—718
Abnormal, or secondary, grain growth 761
Activation 484
Active regions, formation of 52—56
Adhesion 737
Aerial image 251
AES (Auger electron spectroscopy) 174 176 651
Airy's disk 211—213 215
AL deposition 565 566
AL plasma etching 649 650
AL reflow 705
AL spiking 692
Alkali ion contamination 38 153 310
Alloy junction bipolar transistors 8 9
Amorphous layer formation 479
Amorphous layer regrowth 482
Anisotropic arrival angle distribution 544
Anisotropic etching 75 76 611
Anisotropy 75 76 611 616
Antimony 127 452
Antireflection Coating (ARC) 230 281
APCVD see "Atmospheric Pressure Chemical Vapor Deposition (APCVD)"
application-specific integrated circuits (ASICs) 2
Arrival angle distribution 543 567 587 654
Arsenic 72—74 344 477 478 487
Arsine 561
Aspect Ratio (AR) 510
Aspect Ratio Dependent Etching (ARDE) 641 663
ATHENA (Silvaco) 272 274 312 345 347 403 598—600 653 671—674 737 744 745 753
Atmospheric Pressure Chemical Vapor Deposition (APCVD) 512 513—525
Atomic force microscopy (AFM) 299 726
Atomic Layer Deposition (ALD) 601
Auger electron spectroscopy (AES) 174 176 651
Autodoping 522—525
Back-end technology 681—786
Back-end technology, basic concepts 687—715
Back-end technology, contacts 688—695
Back-end technology, defined 681
Back-end technology, dielectrics 707—715
Back-end technology, historical development 687 688
Back-end technology, interconnects/vias 695—707
Back-end technology, manufacturing mcthods/equipment 715—725
Back-end technology, manufacturing mcthods/equipment, contact formation 719—721
Back-end technology, manufacturing mcthods/equipment, first-level dielectric processing 718 719
Back-end technology, manufacturing mcthods/equipment, global interconnects 721 722
Back-end technology, manufacturing mcthods/equipment, IMD deposition and planarization 723 724
Back-end technology, manufacturing mcthods/equipment, siticided gates and source/drain regions 716—718
Back-end technology, manufacturing mcthods/equipment, via formation 724
Back-end technology, measurement methods 725—737
Back-end technology, measurement methods, chemical and structural measurements 732—734
Back-end technology, measurement methods, electrical measurements 726—732
Back-end technology, measurement methods, mechanical measurements 734—737
Back-end technology, measurement methods, morphological measurements 726
Back-end technology, models/simulation 737—776
Back-end technology, models/simulation, Chemical-Mechanical Polishing (CMP) 744—746
Back-end technology, models/simulation, diffusion in polycryslalline materials 762—765
Back-end technology, models/simulation, electromigration 765—776
Back-end technology, models/simulation, grain growth 753—762
Back-end technology, models/simulation, reflow 746—753
Back-end technology, models/simulation, silicide formation 738—744
Back-end technology, technolngies/models, limits and future trends in 776—780
Band model 18—21
Band model, introduction of dopants 19
Bandgap temperature dependence 27
Barrel etcher 628
Barrier layers, properties 696
Barrier layers, refractory metal compounds as 695
Barrier layers, refractory metal silicides as 694
Base collector junction 40
Bell Telephone Laboratories 7—9
BESOI 145 46
Bias sputtering 549—551
Bias Temperature Stressing 311
Bias-sputter deposition 530 549—551
BICMOS technology 42 43
BICs (Boron Interstitial Clusters) 497
Bipolar Junction Transistors (BJTs) 4 39—41
Bird's beak effect 292
Blanket tungsten deposition 567
Bleaching 230
Body-Centered Cubic (BCC) cells 94
Boltzmann distribution function 25
Bond model 18—19
Bond model, introduction of dopants 19
Bonded and etch-back technology for SOI (BESOI) 145
Boron 9 61 62 72 127 414 415 428 429 452 469 478
Boron Interstitial Clusters (BICs) 497
Boron TED 497
Bosch process 675
BPSG (borophosphosilicate glass) 85 86 709 718
Brandt-Kitagawa effective charge 473
Brownian motion 157 158
Buried layers 65—70
Capacitance-Voltage (CV) method 301 399
Carbon in silicon 142
Carrier lifetime 31 177
Cathode dark space 541
Cathode sheath 543
Cesium 396
channeling 461
Charge to breakdown 311
Charged point delects 134 135 436
Chemical cleaning 159 184
Chemical vapor deposition (CVD) 102—105 289 511—530 699
Chemical Vapor Deposition (CVD), Atmospheric Pressure Chemical Vapor Deposition (APCVD) 512 513—525
Chemical Vapor Deposition (CVD), High-Density Plasma Chemical Vapor Deposition (HDPCVD) 530 551 564 586 587
Chemical Vapor Deposition (CVD), Low-Pressure Chemical Vapor Deposition (LPCVD) 512 525—527 582 583
Chemical Vapor Deposition (CVD), Plasma-Enhanced Chemical Vapor Deposition (PECVD) 512 527—530 584—587
Chemical Vapor Deposition (CVD), sub-atmospheric CVD (SACVD) 564
Chemical-Mechanical Polishing (CMP) 58 86 87 107 279 570 675 713 714 744—746
Chemically amplified (CA) resist 225
Child's law 468
Chip size 1—3
Chip yield 182
Chlorosilane 102
CIM (Computer Integrated Manufacturing) tools 180
Clean factories 157—159 165 169—173 181—184
Clean rooms 193—195
Cleaning chemistry 159 184
Climb process 99—100
CMOS technology 12 42 43 49—92
CMOS technology, process flow 50—90
CMOS technology, process flow, active region formation 52—56
CMOS technology, process flow, buried and epitaxial layers 65—70
CMOS technology, process flow, contact and local interconnect formation 82—84
CMOS technology, process flow, contact and local interconnect formation, multilevel metal formation 84—90
CMOS technology, process flow, field implants under LOCOS regions 63—65
CMOS technology, process flow, gate formation 71—76
CMOS technology, process flow, N and P well formation 60—63
CMOS technology, process flow, process options for active region and well formation 63—70
CMOS technology, process flow, shallow trench isolation 57—60
CMOS technology, process flow, source/drain formation 80—82
CMOS technology, process flow, substrate selection 51 52
CMOS technology, process flow, tip/extension (LDD) formation 76—80
cmp see "Chemical-Mechanical Polishing (CMP)"
Cold-wall reactors 512
Collimated sputter deposition 551—554
Color charts 300
Complementary' MOS see "CMOS technology"
Computer-aided design (CAD) 6 203
Concentration dependent diffusion 409 436
Conductivity 371
Conformal coverage 509 589
Contact formation 719—721
Contact printing 208
contacts 681 688—695
| Contacts, resistance 727
Contacts, resistivity 689
Contacts, spiking 692
Contaminant 152 157 173
Cosine arrival angle distribution 544
Cosine emission, or diffuse emission 534
Covalent bonding 14
Critical area, chips 152
Critical modulation transfer function (CMTF) 227 228
Critical particle size 153
Crookes dark space 541
Cross-bridge Kelvin structure 728 729
Crystalline 13
Crystalline precipitate 101
Crystalline semiconductor materials 13
Crystals, carbon in silicon 142
Crystals, defects in 97—101
Crystals, diameters 104
Crystals, manufacturing methods/equipment 109—111
Crystals, measurement methods 111—21
Crystals, measurement methods, electrical measurements 111 112
Crystals, measurement methods, electron microscopy 119—121
Crystals, measurement methods, etches 117 118
Crystals, measurement methods, Fourier transform infrared spectroscopy (FTIR) 118 119
Crystals, measurement methods, Hall effect measurements 115—117
Crystals, measurement methods, hoi point probe 112 113
Crystals, measurement methods, physical measurements 117
Crystals, measurement methods, sheet resistance 113—115
Crystals, models/simulation 121—144
Crystals, models/simulation, Czochralski (CZ) crystal growth 122—128
Crystals, models/simulation, print defects 131—138
Crystals, models/simulation, zone refining and FZ growth 128—131
Crystals, oxygen in silicon 138—142
Crystals, pulling apparatus 110
Crystals, raw materials and purification 101 102
Crystals, structure of 94—97
Crystals, technologies/models, limits and future trends in 144—146
Crystals, volume defects in 101
Crystals, wafer preparation/specification 105—109
Cu deposition 570 571
Cu interconnects 779
Current crowding 727
Curvature (surface) 748
CV method 301
CV profiling 399
CVD see "Chemical Vapor Deposition (CVD)"
Czochralski (CZ) crystal growing apparatus 103
Czochralski (CZ) crystal growth 122—125 537
Czochralski (CZ) crystal growth, dopant incorporation during 125—128
Czochralski method 97 102
Damage annealing 479—482
Damage production 476—479
Damascene process 87 704 724
Damascene process, dual 724
Dash etch 118
DC sputter deposition 539—546
Deal-Grove model 267 293 312 313 322—329 344 345 349 515 741
Deep Level Transient Spectroscopy (DLTS) 180 488
Deep P+ diffusions 41
Deep UV (DUV) 222
Deep UV (DUV), resists 225 226
Defect density numbers 152 153
Defect etches 117 118
Degenerate semiconductors 26
Degree of anisotropy 616
Degree Of Planarization (DOP) 703 704
Deionized water (DI) 172
Denuded zone 162 168 170
DEPICT (Avant!) 247
Deposition 509—608
Deposition, basic concepts 511—154
Deposition, Chemical Vapor Deposition (CVD) 511—530
Deposition, Chemical Vapor Deposition (CVD), Atmospheric Pressure Chemical Vapor Deposition (APCVD) 512 513—525
Deposition, Chemical Vapor Deposition (CVD), High-Density Plasma Chemical Vapor Deposition (HDPCVD) 530 586 587
Deposition, Chemical Vapor Deposition (CVD), Low-Pressure Chemical Vapor Deposition (LPCVD) 512 525—527 582 583
Deposition, Chemical Vapor Deposition (CVD), Plasma-Enhanced Chemical Vapor Deposition (PECVD) 512 527—530 584—587
Deposition, common deposition methods (table) 555
Deposition, historical development 511 512
Deposition, manufacturing methods 554—571
Deposition, manufacturing methods,  deposition 563—565
Deposition, manufacturing methods, deposition 561—563
Deposition, manufacturing methods, deposition 567 568
Deposition, manufacturing methods,  deposition 567 568
Deposition, manufacturing methods, Al deposition 565 566
Deposition, manufacturing methods, Cu deposition 570 571
Deposition, manufacturing methods, epitaxial Si deposition 556—558
Deposition, manufacturing methods, polycrystalline Si deposition 558—561
Deposition, manufacturing methods, Ti deposition 566
Deposition, manufacturing methods, Ti-W deposition 566
Deposition, manufacturing methods, TiN deposition 568 569
Deposition, manufacturing methods, W deposition 567
Deposition, measurement methods 572
Deposition, models 573—600
Deposition, models, for deposition simulations 573 574
Deposition, models, in physically based simulators 574—581
Deposition, Physical Vapor Deposition (PVD) 511 512 530—554
Deposition, Physical Vapor Deposition (PVD), evaporation method 511 531—539
Deposition, Physical Vapor Deposition (PVD), sputter deposition method 511 539—554
Deposition, simulations 590—601
Deposition, simulations, of deposition using a physically based simulator 590—598
Deposition, step coverage 509
Deposition, technologies/models, limits/future trends in 601 602
Depth of focus 214
Devitrification 292
Diazoquinone molecules 224
DIBL (Drain-Induced Barrier Lowering) 373 499
Dibroane 561
Dichlorosilane 102
Dielectrics 707—715
Dielectrics, first level 681 707 718
Dielectrics, jniermetal dielectrics (IMDs) 681 707 708 723
Diffraction 209—212
Diffusion 371—451
Diffusion, basic concepts 374—392
Diffusion, diffused layers, design/evaluation of 389—392
Diffusion, dopant solid solubility 375—377
Diffusion, error-function solution near a surface 384 385
Diffusion, from a macroscopic viewpoint 377—379
Diffusion, Gaussian solution, in an infinite median 380 381
Diffusion, Gaussian solution, near a surface 381 382
Diffusion, historical development 374—392
Diffusion, intrinsic diffusion coefficients of dopants in silicon 386—388
Diffusion, manufacturing methods and equipment 392—395
Diffusion, measurement options 395—403
Diffusion, measurement options, 2D electrical measurement using scanning probe microscopy 400—402
Diffusion, measurement options, capacitance voltage 399
Diffusion, measurement options, inverse electrical measurements 402 403
Diffusion, measurement options, sheet resistance 398 399
Diffusion, measurement options, SIMS (Secondary Ion Mass Spectrometry) 396 397
Diffusion, measurement options, spreading resistance 397 399
Diffusion, measurement options, TEM cross section 399 400
Diffusion, models/simulations 403—439
Diffusion, models/simulations, activation energy for self-diffusion and dopant diffusion 426
Diffusion, models/simulations, charge state effects 436—439
Diffusion, models/simulations, chemical equilibrium formulation for dopant-defect interactions 432—434
Diffusion, models/simulations, dopant diffusion and J and V 422—426
Diffusion, models/simulations, dopant-defect interactions 426—432
Diffusion, models/simulations, interfacial dopant pileup 415—417
Diffusion, models/simulations, numerical solutions of the diffusion equation 403—405
Diffusion, models/simulations, oxidation-enhanced or -retarded diffusion 419—422
Diffusion, models/simulations, physical basis for diffusion at atomic scale 417—419
Diffusion, models/simulations, segregation 413—415
Diffusion, models/simulations, simplified expression for modeling 434—436
Diffusion, successive diffusion steps, effect of 388 389
Diffusion, technologies/models, limits and future trends in 439—442
Dill model 267—269
Dimethylaluminumhydride (DMAH) 566
Direct bandgap semiconductor 30
Direct fluxes, topography models 575—577 654
Dishing 745
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