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| Ïîèñê ïî óêàçàòåëÿì |
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| Plummer J.D., Deal M.D., Griffin P.B. — Silicon VLSI Technology: Fundamentals, Practice, and Modeling |
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| Ïðåäìåòíûé óêàçàòåëü |
Dislocation free wafers 98
Dislocation loops 99 481
Dislocations 98—100 110
Dissociative mechanism 187
DLTS (Deep Level Transient Spectroscopy) 180 488
DNQ resists 240 241 259—264
DNQ resists, g-line/i-line 259—263
Dopant activation 484—486
Dopants 13—17
Dopants, heavy doping effects 21 22
Dopants, shallow donors 19 20
Double crucible method 144
Drain formation 80—82
DRAM 155 156 182 201
Drive-in diffusion 375
dry etching see "Plasma etching"
Dual damascene process 724
Dual diffusion mechanism 422
Dual Pearson distribution 461—463
DUV resist 225
Dynamic random access memory see "DRAM"
Edge bead 240
Effective diffusivity 434
Electric field effects 406
Electrical measurements, of silicon wafers 111 112
Electroless deposition 570 571
Electromigration 88 89 696—698 765—776
Electron Back-Scattering Diffraction (EBSD) 733
Electron beam lithography 273—275
Electron cyclotron resonance (ECR) 530 632 633
Electron microscopy 119—121
Electron spectroscopy for chemical analysis (ESCA) 732 733
Electronic Grade Silicon (EGS) 102
Electronic stopping 273—275
Electroplating 570
Elemental semiconductors 14
Ellipsometer 45 300 572 733
emission 514
Emission flux 578
Emitted flux, physically based topography models 579 580
End-Of-Range (EOR) defects 481 484
Enhanccment/Depletion (E/D) 42
Epitaxial lateral overgrowth (ELO) 146
Epitaxial layers 65—70
Epitaxial silicon deposition 519 556—558
Erosion 746
Error function 382—385
Etchback planarization 711
Etching 609—681
Etching, anisotropic etching 611
Etching, anisotropy 611 616
Etching, basic concepts 612—637
Etching, bias 613
Etching, directionality 610 611
Etching, dry etching see "Plasma etching"
Etching, historical development 612—637
Etching, isotropic etching 611 616
Etching, manufacturing methods 637—650
Etching, manufacturing methods, plasma etch methods for various films 643 644
Etching, manufacturing methods, plasma etching aluminum 649 650
Etching, manufacturing methods, Plasma etching conditions/issues 638—643
Etching, manufacturing methods, plasma etching polysilicon 647—649
Etching, manufacturing methods, plasma etching silicon dioxide 644—647
Etching, measurement methods 650—653
Etching, models, for etching simulation 653—656
Etching, models, linear etch model 656—663
Etching, models, saturation/adsorption model for ion-enhanced etching 663—669
Etching, plasma etching 619—637
Etching, plasma etching, chemical etching 622—625
Etching, plasma etching, in barrel etchers, for 628—630
Etching, plasma etching, in high-density plasma systems 632—634
Etching, plasma etching, in parallel plate systems-reactive ion etching (RIE) mode 630 631
Etching, plasma etching, in parallel plate systems—plasma mode 630 631
Etching, plasma etching, ion-enhanced etching 622 626—628
Etching, plasma etching, mechanisms 621—628
Etching, plasma etching, physical etching 625 626
Etching, plasma etching, sputter etching and ion milling 634—636
Etching, plasma etching, system design 619 620
Etching, selectivity 609—611 613
Etching, uniformity 641 642
Etching, vertical etching 611 666
Etching, wet etching 609 612—619
Etching, wet etching, Buffered HF (BHF)/Buffered Oxide Etch (BOE) 612 618
Etching, wet etching, common etchants (table) 619
Etching, wet etching, etch bias 613
Etching, wet etching, etch rales 618 619
Etching, wet etching, etch thickness/depth 613 614
Etching, wet etching, overetching 614 615
Etching, wet etching, selectivity 612 613
Etehstop layer 724
Evaporation method, PVD 511 531—539
Evolve 573
Exposure field requirements, lithography 201
Extension (LDD) formation 76—80
Extreme Ultraviolet (EUV) lithography systems 202 203 277
Extrinsic effects 21—30
Extrinsic effects, in diffusion 406—413
Extrinsic effects, in oxidation 343
Extrinsic gettering sites 164
Extrusion fill 554
Face-Centered Cubic (FCC) cells 94 95
Far field diffraction 212—218
Far field diffraction, the Huygens-Fresnel principle 210 211
Fast diffusers 386
Femri level 23—25
Fermi-Dirac distribution function 26
Fermi-Dirac probability function 23 25
Fick's laws modifications to account for concentration-dependent diffusion 409—413
Fick's laws modifications to account for electric field effects 406—409
Fick’s laws 314 378 379 392 403—417 429—441
Fick’s laws, first law 378 520
Fick’s laws, modifications, to account for concentration-dependent diffusion 409—413
Fick’s laws, modifications, to account for electric field effects 406—409
Fick’s laws, second law 378—380
Field implants, defined 64
Field implants, under LOCOS regions 63—65
First-level dielectric processing 707 718 719
Fixed oxide charge 294
Flat band voltage 309
Float-zone (FZ) crystal growth process 102—105 128—131
FLOOPS process simulator 739
Focused Ion Beam (FIB) milling machines 399
Focused Ion Beam (FIB) technique 636
ForceFlll technique 554
Four-point probe measurement method 113 115 373
Fourier transform infrared spectroscopy (FTIR) 118 119 732
Frank-Tumbull mechanism 187
Fraunhofer diffraction 212—218
Frenkel pairs 476 479
Frenkel process 132
Fresnel diffraction 212 219—221 247
FTIR see "Fourier transform infrared spectroscopy (FTIR)"
Fully coupled diffusion 426—431
Fully kinetic diffusion 440—442
Gale insulator 288 289
Gap filling 509
Gas immersion laser doping (GILD) 440
Gate formation 71—76
Gate Oxide Integrity (GOI) 153
Gaussian profiles 380—382 452—457
Gettering 156 161—164 167—169 176—180 186—193
Gettering, metal atoms, making mobile 186 187
Gettering, metal atoms, trapping at the gettering site 190—193
Gettering, metal diffusion to gettering site 187—190
Gettering, strategies, for alkali ions/metals 162
Ghez and van der Meulen model 324 328
Glide planes 100
Global interconnects 721 722 681
Global planarization 710
Grain boundaries 753
| Grain boundary diffusion 762—765
Grain grooving 760
Grain growth 753—762
Grain growth, abnormal or secondary 761
Grain growth, normal 758
graphite 110
Gravitational sedimentation 158
GROFILMS 602
Grown junction bipolar transistors 8
Growth kinetics, dependence on crystal orientation 329—332
Growth kinetics, dependence on pressure 328 329
Growth kinetics, mixed ambient 332 333
G—line resists 223 224
Hall effect measurements 115—117
Hall mobility 117
Hall scattering factor 117
Han and Helm model 323 324 332
Heavy doping effects 21 22 343 406
Heavy ions, distribution of 452
Henry's law 314 324
HEPA filters 158 160 165
Hexamelhyldisilane (HMDS) 239 240
High Efficiency Particulate Air (HEPA) filters 158 160 165
High K dielectrics 290
High-Density Plasma (HDP) etch system 632—634
High-Density Plasma Chemical Vapor Deposition (HDPCVD) 58 530 551 564 586 587 713 719
High-energy implants 466—468
High-Frequency CV curve 311
High-temperature sputter deposition 554 566
Hillock growth 696—698
Hot electron problems 77
Hot point probe 112 113
Hot-sputter deposition 554 566
Hot-wall reactors 512
Huygens-Fresnel principle 210
Hydrogen passivation 356 357
I-line resists 223 224
I-line steppers 207
Ideal cosine emission 535
Ideal gas law 314
Ienz's law 144
Implant see "Ion Implantation"
Impurities 97
Indirect fluxes, topography models 577 654
Indium 9 388 412
Inductively Coupled Plasma (ICP) 530 633
Infrared heating 240
Infrared temperature sensors 125
Inhibitors lor etching 627 640
Integrated circuit (IC), and the planar process 7—13
Integrated circuit (IC), components 1
Integrated circuit (IC), historical perspective 1—46
Integrated circuit (IC), increasing complexity of 1
Integrated circuit (IC), power supply level 76 77
Interconnects, capacitance 682
Interconnects, global 681 721 722
Interconnects, local 681 699—702
Interconnects, resistance 682
Interconnects, scaling 683
Interface charges 352—357
Interface trapped charge 294 295
Intermetal dielectrics (IMDs) 681 707 708 723
Interstitialcy 98
Intrinsic doping coefficients 387 388
Intrinsic electron concentration 16 21
Intrinsic Fermi level 23
Intrinsic gettering 52 192 195
Intrinsic gettering, sites 164
Intrinsic region 22
Intrinsic stress 734
Ion beam heating 469
ion implantation 15—17 60 61 190 346 375 451—508
Ion implantation, basic concepts 451—463
Ion implantation, effects on devices 497—499
Ion implantation, historical development 451—463
Ion implantation, manufacturing methods/equipment 463—469
Ion implantation, manufacturing methods/equipment, high—energy implants 466—468
Ion implantation, manufacturing methods/equipment, ion beam heating 469
Ion implantation, manufacturing methods/equipment, ultralow energy implants 468 469
Ion implantation, measurement methods 469 470
Ion implantation, models/simulations 470—499
Ion implantation, models/simulations, damage annealing 479—482
Ion implantation, models/simulations, damage production 476—479
Ion implantation, models/simulations, dopant activation 484—486
Ion implantation, models/simulations, local electronic slopping 474 475
Ion implantation, models/simulations, nonlocal electronic stopping 473 474
Ion implantation, models/simulations, nuclear stopping 471—473
Ion implantation, models/simulations, solid-phase epitaxy 482—484
Ion implantation, models/simulations, total stopping powers 475
Ion implantation, models/simulations, Transient-Enhanced Diffusion (TED) 486 487
Ion implantation, technologies/methods, limits and future trends in 494—500
Ion milling 634—636
Ion pairing model 191 192
Ion-enhanced etching, in plasma systems 622 626 623 663—669
Ionized metal plasma (IMP) deposition 554
Ionized PVD (IPVD) 551—554
Ionized sputter deposition 551—554
Irvin's curves 389
Isolation methods 53—59
Isoopic etching 75—76 611 616
Isotopic arrival angle distribution 544
Kick-out mechanism 187
Kinchin-Pease formula 476 477
Kohler illumination 236
Langmuir adsorption 664
Langmuir-Knudsen theory 536
Lanice constant 27 94
Lanice damage, and sputter etching 635
Lanice defects 33
Latchup 65 467
latent image 253—259
Lateral straggle 453
Law of mass action 21
LDD devices 77 78
light emitting diodes (LEDs) 30
Light ions, distribution of 452
Lightly Doped Drain (LDD) devices 77 78
Line defects 98
Linear etch model 656—663
Linear parabolic model 313
Linewidth standards 244
Lithography 107 201—287
Lithography, advanced mask engineering 271 272 277 278
Lithography, basic concepts 203—234
Lithography, contact and proximity systems 219—221 247
Lithography, contact printing 208
Lithography, diffraction 209—212
Lithography, exposure field requirements 201
Lithography, Extreme Ultraviolet (EUV) lithography systems 202 203 277
Lithography, historical development 203—234
Lithography, light sources 206 207
Lithography, mask engineering 230—234
Lithography, mask engineering, Optical Proximity Correction (OPC) 230—232
Lithography, mask engineering, Phase Shift Masks (PSMs) 230
Lithography, measurement methods 241—246
Lithography, measurement methods, etched features 244—246
Lithography, measurement methods, mask features/defects 242—244
Lithography, measurement methods, resist patterns 244
Lithography, models/simulation 246—272
Lithography, models/simulation, optical intensity pattern in the photoresist 253—259
Lithography, models/simulation, photoresist developing 267—270
Lithography, models/simulation, photoresist exposure 259—264
Lithography, models/simulation, photoresist postbake 270 271
Lithography, models/simulation, postexposure bake (PEB) 264—266
Lithography, models/simulation, wafer exposure systems 247—255
Lithography, optical 202 203
Lithography, photoresists 221—30 238—241
Lithography, photoresists, basic properties/characterization of 227—230
Lithography, photoresists, Deep UV (DUV) resists 225 226
Lithography, photoresists, g—line resists 223 224
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