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Streetman B.G. — Solid State Electronic Devices
Streetman B.G. — Solid State Electronic Devices



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Íàçâàíèå: Solid State Electronic Devices

Àâòîð: Streetman B.G.

Àííîòàöèÿ:

Solid State Electronic Devices is an introductory book on semiconductor materials, physics, devices, and technology. Now in its sixth edition, the book retains the two basic goals that have helped to make it so successful: 1) develop the basic semiconductor physics concepts to understand current and future devices and 2) provide a sound understanding of semiconductor devices and technology so that that their applications to electronic and optoelectronic circuits and systems can be appreciated.


ßçûê: en

Ðóáðèêà: Ôèçèêà/

Ñòàòóñ ïðåäìåòíîãî óêàçàòåëÿ: Ãîòîâ óêàçàòåëü ñ íîìåðàìè ñòðàíèö

ed2k: ed2k stats

Èçäàíèå: Fourth Edition

Ãîä èçäàíèÿ: 1995

Êîëè÷åñòâî ñòðàíèö: 462

Äîáàâëåíà â êàòàëîã: 03.02.2010

Îïåðàöèè: Ïîëîæèòü íà ïîëêó | Ñêîïèðîâàòü ññûëêó äëÿ ôîðóìà | Ñêîïèðîâàòü ID
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Ïðåäìåòíûé óêàçàòåëü
$f_{T}$, cutoff frequency (BJT)      278
$I^{2}L$      344—346
$k_{d}$      see "Distribution coefficient"
a-c Equivalent circuit, BJT      277
a-c Equivalent circuit, JFET      294
Abrupt junction      138
Absorption, coefficient $(\alpha)$      98
Absorption, optical      96—99 379
Acceptor, action in semiconductors      67—69
Acceptor, atoms      67—69 108
Acceptor, doping profile      133 137 182 197—198 266
Acceptor, ionization energy in Si      108
Acceptor, level      67—69
Accumulation layer in a BNDC device      423—424
Accumulation layer in an FET      302—303
Admittance, a-c      175
AlGaAs      17—20 192—194 227 283 296—298 392—396
AlGaAs growth, chemical vapor deposition      22
AlGaAs growth, liquid-phase epitaxy      20
AlGaAs growth, molecular beam epitaxy      23—24
AlGaAs, composition diagram      60
AlGaAs, energy bands      59
Alkali halides      52
Alloy, composition      18—19 58—60
Alloy, die bond      368
Alloy, process      131—132
Alloyed junction, BJT      242
Alloyed junction, diode      131—132
Alloyed junction, SCR      409—410
Alpha ($\alpha$) of a BJT, calculation      250—251
Alpha ($\alpha$) of a BJT, definition      239
Alpha ($\alpha$) of a BJT, dependence on current      271—272 402
Alpha ($\alpha$) of a BJT, dependence on voltage      268—269
Aluminum (Al), acceptor in Si      67 108
Aluminum (Al), alloy in Si      11 409—410
Aluminum (Al), contact pads      357 360 367—371
Aluminum (Al), metallization      135 356
Aluminum (Al), wire bonding      368—370
Amorphous solids      4
Amplification      232 238—242
Amplification mode (BNDC devices)      427
Amplifier, graphical analysis      234
Amplifier, transistor      240
Anisotropic etch      341
annealing      138 323
Anode of a p-n-p-n diode      400
Anode, gate in an SCS      408
Antimony (Sb)      66 108 343 409 444
Arrays, solar cell      215
Aspect ratio      354
Asymmetrically doped junction      159
Atomic arrangements in solids      see "Crystal structure"
Atomic structure      42—48
Atomic theory      33—35 42—48
Atomic weight      10 15—16
Attenuation in a fiber      225
AU      see "Gold"
Avalanche breakdown, BJT      269—271
Avalanche breakdown, diode      206—207
Avalanche breakdown, doping dependence      166
Avalanche breakdown, mechanism      164—166
Avalanche breakdown, p-n-p-n      404—405
Avalanche breakdown, voltage      166
Avalanche photodiode      218—221
Avalanche transit time diode      see "IMPATT diode"
Avogadro's number      10 438
Axes, crystal      7—9
Balance of drift and diffusion      140—141
Ball bond      370—371
Balmer series      32 35
Band bending      302—305
Band diagram      see "Energy band"
Band discontinuities (offsets)      281—283
Band gap of common semiconductors      439
Band gap of common semiconductors, relative to the spectrum      99
Band gap, definition      3 54—60
Band gap, dependence on alloy composition      19 60 223
Band gap, relation to junction voltage      176
Band-to-band transitions      56—58 103—106 222
Bandwidth      220
Barrier, to injection      176—178
Barrier, tunneling      41—42 164 208—212
Base (BJT), contact      243 272—276
Base (BJT), current      237—238 247—250 261—263
Base (BJT), drift in      266—267
Base (BJT), region      236 243
Base (BJT), resistance      272—276
Base (BJT), spreading resistance      273 275—276
Base (BJT), transport factor B      238—239 250
Base narrowing, BJT      268—269
Base narrowing, p-n-p-n      404
Base width (BJT), definition      237
Base width (BJT), modulation      see "Base narrowing"
Basis vectors      4
Batch fabrication      332
Beam-lead      371—372
Beta $(\beta)$ of a BJT of a composite transistor      375
Beta $(\beta)$ of a BJT, calculation      250—251
Beta $(\beta)$ of a BJT, definition      239 241
Beta $(\beta)$ of a BJT, dependence on biasing      268—269
Beta $(\beta)$ of a BJT, dependence on injection      271—272
Beta $(\beta)$ of a BJT, dependence on temperature      272
Beta $(\beta)$ of a BJT, relation $f_{T}$      278
Beveling      204
Bilateral p-n-p-n switch      408—409
Binding energy of a donor or acceptor      68—69
Bipolar junction transistor (BJT)      232—283 342—346
Bipolar junction transistor (BJT), amplification      234—241
Bipolar junction transistor (BJT), configurations      236 245 274—275 280—281 342—346
Bipolar junction transistor (BJT), currents      236—241 246—250 252—257
Bipolar junction transistor (BJT), equivalent circuits      254—255 259 277
Bipolar junction transistor (BJT), fabrication      242—243 274—275 280—281 342—346
Bipolar junction transistor (BJT), heterojunction      281—283
Bipolar junction transistor (BJT), summary of carrier flow      237—238
Bipolar junction transistor (BJT), transient effects      260—263
BJT      see "Bipolar junction transistor"
Blackbody radiation      397
BNDC      see "Bulk negative differential conductivity"
Body effect      322
Body-centered cubic (BCC) lattice      5
Bohr model      33—35
Boltzmann factor      71
Boltzmann statistics      71
Bond, covalent      53—54
Bond, die      368
Bond, ionic      52
Bond, lead      368—371
Bond, metallic      53
Bond, thermocompression      368
Bonding forces      52—54
Bonding of IC's      368—372
Boron (B), acceptor      67
Boron (B), diffusion in Si      197—199 284
Boron (B), energy level in Si      108
Boron (B), ion implantation      137 323
Boron (B), solubility in Si      444
Boron (B), source materials for diffusion      134
Breakdown diode      206—207
Breakdown, avalanche      164—166 269—270
Breakdown, edge      203—204
Breakdown, Zener      163—164
Brewster angle      386
Bridgman method      12—13
Buffer layer in MESFET      295—296
Built-in field      118 140 266—268 283
Bulk negative differential conductivity (BNDC), devices      419—430
Bulk negative differential conductivity (BNDC), materials      422 429
Bulk negative differential conductivity (BNDC), mechanism      421
Buried heterostructure laser      394—395
buried layer      342
Buried-channel CCD      360
Burrus diode      226—227
Capacitance in a BJT      276—278
Capacitance, abrupt junction      173—175
Capacitance, arbitrary junction      207—208 229
Capacitance, charge storage      175
Capacitance, depletion layer      174
Capacitance, diffusion      175
Capacitance, junction      173—175
Capacitance, linearly graded junction      197
Capacitance, MOS      301—314 322—324 355—357
Capacitance, parasitic      280 323
Capacitor, integrated      335—336 355—357
Capture of electrons and holes in recombination      103—108 178—180
Carrier concentration      71—81
Carrier concentration, constant product      77 110
Carrier concentration, equilibrium      76—77
Carrier concentration, excess      see "Excess carriers"
Carrier concentration, gradient      112—118
Carrier concentration, intrinsic      78—79
Carrier concentration, relation to doping      80—81
Carrier concentration, temperature dependence      78—80
Carriers      see also "Electron" "Hole" "Majority "Minority
Carriers, majority and minority      69
Cathode, gate (SCS)      408
Cathode, p-n-p-n diode      400
Cathode-ray tube (CRT)      102
Cathodoluminescence      102—103
CCD      357—362
Centers, recombination and trapping      100 106—109 178—180
Channel (FET), conductance      293 316
Channel (FET), induced      300—305 314—328
Channel (FET), metallurgical      292
Channel (FET), pinch-off      290 293 295 316
Channel (FET), width      292 315
Channel stops      346—347
Charge carriers      61—81
Charge control model, BJT      255—257 261—263 277—278
Charge control model, p-n junction      156—158 167—173 175
Charge sharing      325—326
Charge storage in a BJT      255—257 260—265 277—278
Charge storage in a p-n junction      156—157 168—177
Charge storage, capacitance      175 278
Charge transfer devices      357—363
Charge, surface (MOS)      303—307 315 357—363
Charge-coupled device (CCD)      357—362
Chromatic dispersion      226
Circuit models, BJT      254—255 277
Circuit models, diode      202
Circuit models, JFET      294
Circuit symbols      445—447
Cleavage along crystal planes      11—12
Cleavage in injection laser fabrication      391—392 396
Cleaved-coupled cavity laser      396
CMOS      350—351
Coherent light      378
Collector (BJT), breakdown      269—271
Collector (BJT), characteristics      235 255 258
Collector (BJT), contact      242—243 280 342—343
Collector (BJT), injection      see "Inverted mode"
Collector (BJT), region      237
Collector (BJT), resistance      276 342—343
Color of light emission      222
Color of materials      97—99
Common-base configuration (BJT)      236—237 270
Common-emitter configuration (BJT)      240—241 270
Compensation      80—81 131 see
Complementary error function (erfc)      132 197—198
Complementary MOS      350—351
Complex conjugate      38
Composite transistor      343 375
Compound semiconductors      2 10 17—19
Computer, devices      363—367
Computer, use in IC design      337
Conduction band      54 59—60 420
Conduction band, effective density of states      75 440—442
Conduction band, electron density      74—81
Conduction processes      see "Drift" "Diffusion"
Conductivity      81—85
Conductivity modulation      181 204
Conductivity, intrinsic      86
Conductivity, type      66—69
Confinement in laser junctions      392—394
Constant current source      236
Constant source diffusion      132 197—198
Contact pads      357 360 367—371
Contact potential, abrupt junction      143—144
Contact potential, definition      141
Contact potential, heterojunction      190
Contact potential, relation to maximum forward bias      177
Contacts to semiconductors      85 131 187—189 356—357
Contacts to semiconductors, solar cells      216
Continuity equation      119
Continuous wave (cw) laser      385 392
Controlled rectifier      see "Semiconductor controlled rectifier"
Controlled source      234
Copper, heat sink      204—205 409—410 429
Copper, impurity      108 444
Counterdoping      131
Coupled-diode model      252—255
covalent bond      53
Critical field for breakdown      166 415
Crossover (IC)      324 357
CRT      102
Crystal growth      12—25
Crystal structure      3—12
Crystallographic planes and directions      7—9
Cubic lattice      5
Current      see also "Specific devices"
Current density      83 115
Current gain (BJT amplifier)      238—241
Current transfer ratio      239
Current, diffusion      115 151
Current, drift      84 115 152 266
Current-voltage characteristics, bilateral diode switch      408
Current-voltage characteristics, BJT      236 255 258 269 270
Current-voltage characteristics, ideal diode      202
Current-voltage characteristics, JFET      291 299
Current-voltage characteristics, MOSFET      300 317 325
Current-voltage characteristics, negative resistance devices      211
Current-voltage characteristics, p-n junction      153 163 176 181
Current-voltage characteristics, p-n-p-n diode      400 403
Current-voltage characteristics, photodiode      213
Current-voltage characteristics, Schottky diode      186
Current-voltage characteristics, SCR      406
Current-voltage characteristics, tunnel diode      210—211
Cutoff (BJT)      258—259
Cutoff frequency, BJT      278
Cutoff frequency, MOSFET      329
CVD      17 21—22
Czochralski growth      13—17
DDE      see "Double-diffused epitaxial"
Decay time, photoconductive      104—108
Deep depletion in CCDs      358
Deep depletion in SOS      352—353
Deep level impurities      108
Degenerate semiconductors      208—209 388—389
Delay time      265 407 see
Delayed domain mode      425—426
density      10 439
Density of states, effective      74—77 440—442
Density of states, effective mass      65
Depletion approximation      145
Depletion layer photodiode      217
depletion region      see "Transition region"
Depletion-mode FET      301 320—321
Detector, optical      111—112 217—221
Diamond, band gap      54—55
Diamond, cleavage symmetry      11
Diamond, lattice      9—12
1 2 3 4 5
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