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                    | Streetman B.G. — Solid State Electronic Devices |  
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                    | Ïðåäìåòíûé óêàçàòåëü |  
                    | | DIBL      326 Die bonding      368
 dielectric constant      439
 Dielectric isolation      340—341
 Dielectric relaxation time      422
 Diffused structures, BJT      242—243 266 342—343
 Diffused structures, guard ring      203—204
 Diffused structures, junction laser      391
 Diffused structures, MOSFET      300 347—350
 Diffused structures, p-n junction      132—135
 Diffused structures, resistor      353—355
 Diffused structures, SCR      409—410
 Diffused structures, solar cell      216
 Diffused-epitaxial BJT      342—343
 Diffusion capacitance      see "Charge storage capacitance"
 Diffusion current      115
 Diffusion equation      119—120
 diffusion length      120—121
 Diffusion potential      see "Contact potential"
 Diffusion, carrier      112—125
 Diffusion, coefficient      114 117 123
 Diffusion, current component in junctions      141 151—152 156—157
 Diffusion, current component in transistors      246—247
 Diffusion, field-aided      266—267
 Diffusion, solid state, coefficients      197—198 284 374
 Diffusion, solid state, constant source      132 197—199
 Diffusion, solid state, furnaces      133
 Diffusion, solid state, limited source      132 197—199
 Diffusion, solid state, masking      see "Oxide masking"
 Diffusion, solid state, source materials      134
 Diffusion, theory      112—125
 Digital IC      334
 Diode      see also "p-n junction"
 Diode equation      156 178
 Diode, breakdown      206
 Diode, circuit models      202
 Diode, Gunn      419—430
 Diode, heterojunction      190—194
 Diode, ideal      201
 Diode, IMPATT      413—416
 Diode, light-emitting      222—224
 Diode, metal-semiconductor      183—190
 Diode, narrow base      203 228
 Diode, p-i-n      218
 Diode, p-n-p-n      400—406
 Diode, QWITT      416—418
 Diode, Read      413
 Diode, recovery characteristics      170—173
 Diode, rectifier      201—205
 Diode, resonant tunneling      416—418
 Diode, Schottky      183—190
 Diode, transistor connections      285
 Diode, TRAPATT      418—419
 Diode, tunnel      208—212
 Diode, varactor      207—208
 Diode, Zener      206
 DIP      373
 Dipole in a BNDC device      422—424
 Dipole, depletion region      145
 Direct band gap      57—60 100 222—224 396 439
 Directions in a lattice      7—9
 Discretionary wiring      363
 Dispersion in a fiber      226
 Displacement current      405 418
 Distributed feedback      395
 Distribution coefficient      15
 Distribution function      71
 Domain      422—424
 Donor atoms      66 69 108
 Donor, action in semiconductors      66—69
 Donor, binding energy      68 108
 Donor, level      67
 Doping      66
 Double-diffused epitaxial transistor      342—343
 Double-hetero junction laser      392—393
 Drain (FET)      289 300
 Drain-induced barrier lowering      326
 DRAM      363—365
 Drift      see also "Saturation velocity"
 Drift in the base (BJT)      266—267
 Drift, carrier      81—85 115
 Drift, component in a junction      141 152 160—161
 Drift, current      83
 Drift, mobility      84
 Drift, region of a Read diode      413
 Drift, velocity      83 87—89 122 421 426
 Dual in-line package (DIP)      373
 dv/dt triggering (p-n-p-n)      405
 DX center      298
 Dynamic RAM      363—365
 Early effect      268—269
 Early voltage      268
 EAROM      365
 Ebers — Moll model      252—257
 Edge breakdown      203
 Effective density of states      74—75 440—442
 effective mass      63
 Effective mass, dependence on band curvature      64
 Effective mass, negative values      64
 Effective mass, values for Si, Ge, and GaAs      65
 Efficiency, Gunn devices      426—427
 Efficiency, quantum      101
 EHP      see "Electron-hole pair"
 Einstein, coefficients      374
 Einstein, photoelectric effect      30—31
 Einstein, relation      117 124
 Electric field, built-in      118 145—147
 Electric field, effect on drift velocity      83 88 421
 Electric field, effect on energy bands      116
 Electric field, Hall      89
 Electric field, relation to electrostatic potential      116—117
 Electric field, transition region      144—147 151
 Electrically alterable ROM (EAROM)      365
 Electrochemical potential      see "Fermi level"
 Electroluminescence      103 222—224 387—397
 Electron affinity      185
 Electron beam      102 339
 Electron emission      see "Emission"
 Electron mobility      see "Mobility carrier"
 Electron volt (eV)      3 78 151 438
 Electron, capture at a center      100 106 179—180
 Electron, carrier      61—64
 Electron, concentration      71—81
 Electron, effective mass      63—65 420
 Electron, energy levels      35 40 54—55 70 108 385
 Electron, mean free path      113—114
 Electron, quasi-Fermi level      110 124—125 389
 Electron, scattering      82 87—88
 Electron, trap      100 106
 Electron, valence band      61—62
 Electron, velocity      83 88 421
 electron-beam lithography      339
 Electron-hole pair (EHP)      61
 Electrostatic potential      116 140 150—151
 Elemental semiconductors      2
 Elements, periodic table of the      2 45—48
 Emission from a trap      179—180
 Emission, photoelectric      31
 Emission, spectra      31—33 390
 Emission, spontaneous      378—380 390
 Emission, stimulated      378—380
 Emitter (BJT), contact      242
 Emitter (BJT), crowding      272—276
 Emitter (BJT), injection efficiency      239 250 281—283 402
 Emitter (BJT), junction      237
 Emitter (BJT), multiple      274—275
 Emitter (BJT), region      237 272—276
 Emitter (BJT), stripe geometry      274—275
 Encapsulation      204—205 372—373 410
 Energy band      see also "Specific devices and materials"
 
 | Energy band, definition      3 54 Energy band, dependence on alloy composition      59—60 223
 Energy band, direct and indirect      56—60
 Energy band, formation in diamond      54—55
 Energy band, metals, semiconductors, insulators      55—56
 Energy gap      see "Band gap"
 Energy levels in quantum wells      40 70 194
 Energy levels, carbon      55
 Energy levels, Cr ion in ruby      382
 Energy levels, hydrogen      35 46
 Energy levels, neon      386
 Energy, Fermi      71—77
 Energy, kinetic      34 38
 Energy, potential      34 38
 Enhancement-type FET      301 317
 Epitaxial growth (epitaxy), liquid-phase (LPE)      19—21
 Epitaxial growth (epitaxy), molecular beam (MBE)      23—24
 Epitaxial growth (epitaxy), vapor-phase (VPE)      21—22
 Epitaxial layer, definition      17
 Epitaxial layer, use in BJT's      280—283
 Epitaxial layer, use in detectors      219—221
 Epitaxial layer, use in IC's      342—344
 Epitaxial layer, use in lasers      392—296
 Epitaxial layer, use in varactors      207
 EPROM      365 373
 Equilibrium conditions      see also "Specific devices"
 Equilibrium conditions, carrier concentrations      74—77
 Equilibrium conditions, definition      109
 Equilibrium conditions, p-n junction      138—149
 Equivalent circuit      see "Circuit models"
 Erasable PROM (EPROM)      365 373
 Erbium-doped fiber      385
 Etching of
  layer      134 348 Etching to achieve isolation      341
 Etching to separate IC chips      336 372
 Etching, anisotropic      341
 Excess carriers      93—94 105
 Extraction of carriers      160
 Extrinsic material      66—69
 Extrinsic photodetector      218
 Extrinsic temperature range      79—80
 Fabrication methods, BJT      242—243 274—275 280 339—344
 Fabrication methods, diode      131—138 203—205
 Fabrication methods, Gunn diode      429—430
 Fabrication methods, IC      334—342
 Fabrication methods, junction laser      391—397
 Fabrication methods, MOSFET      323—327 346—353
 Fabrication methods, SCR      409—410
 Fabry — Perot      381
 Face-centered cubic (fcc) lattice      5—6
 Fall time (BJT)      265
 Fat zero      360
 Fermi level      71—75 144
 Fermi level, invariance at equilibrium      91—92
 Fermi level, pinning      189—190
 Fermi — Dirac distribution      71
 FET      see "Field-effect transistor"
 Fiber optics      224—226
 Field doping      347
 Field oxide      318 340 349
 Field-aided diffusion (BJT)      266—267
 Field-effect transistor (FET), HEMT      296—298
 Field-effect transistor (FET), JFET      288—295
 Field-effect transistor (FET), MESFET      295—296
 Field-effect transistor (FET), MOSFET      299—327 346—353
 Fill factor (solar cell)      217
 Fine-line lithography      339
 Flat band      310—312
 Flip-chip      371—372
 Floating zone growth      16—17
 Fluorescence      100
 Fluorescent lamp      101
 Flux density      114
 Forbidden band      54
 forward bias      see "Specific devices"
 Forward-blocking state (p-n-p-n)      402—403
 Forward-conducting state (p-n-p-n)      404
 Four-layer devices      see "p-n-p-n devices"
 Four-point probe      354
 Frequency limitations of BJT's      277—279
 Furnaces, crystal growth      13—16
 Furnaces, diffusion      133
 Furnaces, epitaxy      20—24
 GaAsP      2 19 59 222—223 387 429
 Gain, amplifier      234 238—241
 Gain, photomultiplier      220
 Gallium arsenide (GaAs), band diagram      59 420
 Gallium arsenide (GaAs), diffusion coefficients      117
 Gallium arsenide (GaAs), effective mass      65 420
 Gallium arsenide (GaAs), growth      14 20—24
 Gallium arsenide (GaAs), Gunn diodes      419—429
 Gallium arsenide (GaAs), intrinsic carrier concentration      79
 Gallium arsenide (GaAs), lasers      387—396
 Gallium arsenide (GaAs), mobility      87
 Gallium arsenide (GaAs), properties      439
 Gallium arsenide (GaAs), velocity-field characteristic      422
 Gate, JFET      289 291
 Gate, MESFET      295
 Gate, MOSFET      300
 Gate, SCR      406
 Gate, SCS      408
 Gauss's law      146 182
 Gaussian distribution      123 132 197—198
 Generation carrier, optical      108—109 212—213
 Generation carrier, thermal      61 65—66 109 152—153 179—180
 Generation from a trap      106—107 179—180
 Generation, current      152—153 179—180
 Geometry, device      see "Specific devices"
 Germanium (Ge), diffusion coefficients      117
 Germanium (Ge), diode      131
 Germanium (Ge), effective mass of carriers      65 68
 Germanium (Ge), electronic configuration      47—48
 Germanium (Ge), growth      13
 Germanium (Ge), intrinsic carrier concentration      79
 Germanium (Ge), mobility      87
 Germanium (Ge), properties      439
 Germanium (Ge), solubility of impurities      444
 Giant pulse laser      383—384
 Gold (Au), alloying metal      368 409
 Gold (Au), conductors in IC's      372
 Gold (Au), doping in Si      205 263
 Gold (Au), levels in Si      108
 Gold (Au), solid solubility in Si      444
 Gold (Au), wire bonding      368—371
 Grade constant      182
 Graded alloy composition      282—283 394
 Graded base transistor      266—267
 Graded junction      182—183 197 207—208 229
 Graded-index, channel laser      394
 Graded-index, fiber      225—226
 Gradient, carrier      112—118
 Gradual approximation (FET)      294
 Ground state      45 47 385 386
 Grown junction      131 see
 Growth of semiconductor materials      12—24
 Guard ring      203—204
 Gunn effect      419—430
 Half-wave rectifier      202
 Half-width, channel (FET)      292
 Hall effect      89—92
 Haynes — Shockley experiment      122—125
 HBT      281—283
 He-Ne laser      386—387
 Heisenberg uncertainly principle      36
 HEMT      296—298
 Heterojunctions      190—194
 Heterojunctions, bipolar transistor(HBT)      281—283
 Heterojunctions, laser      392—396
 HF, etch of
  134 High electron mobility transistor      see "HEMT"
 
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