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Streetman B.G. — Solid State Electronic Devices
Streetman B.G. — Solid State Electronic Devices



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Íàçâàíèå: Solid State Electronic Devices

Àâòîð: Streetman B.G.

Àííîòàöèÿ:

Solid State Electronic Devices is an introductory book on semiconductor materials, physics, devices, and technology. Now in its sixth edition, the book retains the two basic goals that have helped to make it so successful: 1) develop the basic semiconductor physics concepts to understand current and future devices and 2) provide a sound understanding of semiconductor devices and technology so that that their applications to electronic and optoelectronic circuits and systems can be appreciated.


ßçûê: en

Ðóáðèêà: Ôèçèêà/

Ñòàòóñ ïðåäìåòíîãî óêàçàòåëÿ: Ãîòîâ óêàçàòåëü ñ íîìåðàìè ñòðàíèö

ed2k: ed2k stats

Èçäàíèå: Fourth Edition

Ãîä èçäàíèÿ: 1995

Êîëè÷åñòâî ñòðàíèö: 462

Äîáàâëåíà â êàòàëîã: 03.02.2010

Îïåðàöèè: Ïîëîæèòü íà ïîëêó | Ñêîïèðîâàòü ññûëêó äëÿ ôîðóìà | Ñêîïèðîâàòü ID
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Ïðåäìåòíûé óêàçàòåëü
DIBL      326
Die bonding      368
dielectric constant      439
Dielectric isolation      340—341
Dielectric relaxation time      422
Diffused structures, BJT      242—243 266 342—343
Diffused structures, guard ring      203—204
Diffused structures, junction laser      391
Diffused structures, MOSFET      300 347—350
Diffused structures, p-n junction      132—135
Diffused structures, resistor      353—355
Diffused structures, SCR      409—410
Diffused structures, solar cell      216
Diffused-epitaxial BJT      342—343
Diffusion capacitance      see "Charge storage capacitance"
Diffusion current      115
Diffusion equation      119—120
diffusion length      120—121
Diffusion potential      see "Contact potential"
Diffusion, carrier      112—125
Diffusion, coefficient      114 117 123
Diffusion, current component in junctions      141 151—152 156—157
Diffusion, current component in transistors      246—247
Diffusion, field-aided      266—267
Diffusion, solid state, coefficients      197—198 284 374
Diffusion, solid state, constant source      132 197—199
Diffusion, solid state, furnaces      133
Diffusion, solid state, limited source      132 197—199
Diffusion, solid state, masking      see "Oxide masking"
Diffusion, solid state, source materials      134
Diffusion, theory      112—125
Digital IC      334
Diode      see also "p-n junction"
Diode equation      156 178
Diode, breakdown      206
Diode, circuit models      202
Diode, Gunn      419—430
Diode, heterojunction      190—194
Diode, ideal      201
Diode, IMPATT      413—416
Diode, light-emitting      222—224
Diode, metal-semiconductor      183—190
Diode, narrow base      203 228
Diode, p-i-n      218
Diode, p-n-p-n      400—406
Diode, QWITT      416—418
Diode, Read      413
Diode, recovery characteristics      170—173
Diode, rectifier      201—205
Diode, resonant tunneling      416—418
Diode, Schottky      183—190
Diode, transistor connections      285
Diode, TRAPATT      418—419
Diode, tunnel      208—212
Diode, varactor      207—208
Diode, Zener      206
DIP      373
Dipole in a BNDC device      422—424
Dipole, depletion region      145
Direct band gap      57—60 100 222—224 396 439
Directions in a lattice      7—9
Discretionary wiring      363
Dispersion in a fiber      226
Displacement current      405 418
Distributed feedback      395
Distribution coefficient      15
Distribution function      71
Domain      422—424
Donor atoms      66 69 108
Donor, action in semiconductors      66—69
Donor, binding energy      68 108
Donor, level      67
Doping      66
Double-diffused epitaxial transistor      342—343
Double-hetero junction laser      392—393
Drain (FET)      289 300
Drain-induced barrier lowering      326
DRAM      363—365
Drift      see also "Saturation velocity"
Drift in the base (BJT)      266—267
Drift, carrier      81—85 115
Drift, component in a junction      141 152 160—161
Drift, current      83
Drift, mobility      84
Drift, region of a Read diode      413
Drift, velocity      83 87—89 122 421 426
Dual in-line package (DIP)      373
dv/dt triggering (p-n-p-n)      405
DX center      298
Dynamic RAM      363—365
Early effect      268—269
Early voltage      268
EAROM      365
Ebers — Moll model      252—257
Edge breakdown      203
Effective density of states      74—75 440—442
effective mass      63
Effective mass, dependence on band curvature      64
Effective mass, negative values      64
Effective mass, values for Si, Ge, and GaAs      65
Efficiency, Gunn devices      426—427
Efficiency, quantum      101
EHP      see "Electron-hole pair"
Einstein, coefficients      374
Einstein, photoelectric effect      30—31
Einstein, relation      117 124
Electric field, built-in      118 145—147
Electric field, effect on drift velocity      83 88 421
Electric field, effect on energy bands      116
Electric field, Hall      89
Electric field, relation to electrostatic potential      116—117
Electric field, transition region      144—147 151
Electrically alterable ROM (EAROM)      365
Electrochemical potential      see "Fermi level"
Electroluminescence      103 222—224 387—397
Electron affinity      185
Electron beam      102 339
Electron emission      see "Emission"
Electron mobility      see "Mobility carrier"
Electron volt (eV)      3 78 151 438
Electron, capture at a center      100 106 179—180
Electron, carrier      61—64
Electron, concentration      71—81
Electron, effective mass      63—65 420
Electron, energy levels      35 40 54—55 70 108 385
Electron, mean free path      113—114
Electron, quasi-Fermi level      110 124—125 389
Electron, scattering      82 87—88
Electron, trap      100 106
Electron, valence band      61—62
Electron, velocity      83 88 421
electron-beam lithography      339
Electron-hole pair (EHP)      61
Electrostatic potential      116 140 150—151
Elemental semiconductors      2
Elements, periodic table of the      2 45—48
Emission from a trap      179—180
Emission, photoelectric      31
Emission, spectra      31—33 390
Emission, spontaneous      378—380 390
Emission, stimulated      378—380
Emitter (BJT), contact      242
Emitter (BJT), crowding      272—276
Emitter (BJT), injection efficiency      239 250 281—283 402
Emitter (BJT), junction      237
Emitter (BJT), multiple      274—275
Emitter (BJT), region      237 272—276
Emitter (BJT), stripe geometry      274—275
Encapsulation      204—205 372—373 410
Energy band      see also "Specific devices and materials"
Energy band, definition      3 54
Energy band, dependence on alloy composition      59—60 223
Energy band, direct and indirect      56—60
Energy band, formation in diamond      54—55
Energy band, metals, semiconductors, insulators      55—56
Energy gap      see "Band gap"
Energy levels in quantum wells      40 70 194
Energy levels, carbon      55
Energy levels, Cr ion in ruby      382
Energy levels, hydrogen      35 46
Energy levels, neon      386
Energy, Fermi      71—77
Energy, kinetic      34 38
Energy, potential      34 38
Enhancement-type FET      301 317
Epitaxial growth (epitaxy), liquid-phase (LPE)      19—21
Epitaxial growth (epitaxy), molecular beam (MBE)      23—24
Epitaxial growth (epitaxy), vapor-phase (VPE)      21—22
Epitaxial layer, definition      17
Epitaxial layer, use in BJT's      280—283
Epitaxial layer, use in detectors      219—221
Epitaxial layer, use in IC's      342—344
Epitaxial layer, use in lasers      392—296
Epitaxial layer, use in varactors      207
EPROM      365 373
Equilibrium conditions      see also "Specific devices"
Equilibrium conditions, carrier concentrations      74—77
Equilibrium conditions, definition      109
Equilibrium conditions, p-n junction      138—149
Equivalent circuit      see "Circuit models"
Erasable PROM (EPROM)      365 373
Erbium-doped fiber      385
Etching of $SiO_{2}$ layer      134 348
Etching to achieve isolation      341
Etching to separate IC chips      336 372
Etching, anisotropic      341
Excess carriers      93—94 105
Extraction of carriers      160
Extrinsic material      66—69
Extrinsic photodetector      218
Extrinsic temperature range      79—80
Fabrication methods, BJT      242—243 274—275 280 339—344
Fabrication methods, diode      131—138 203—205
Fabrication methods, Gunn diode      429—430
Fabrication methods, IC      334—342
Fabrication methods, junction laser      391—397
Fabrication methods, MOSFET      323—327 346—353
Fabrication methods, SCR      409—410
Fabry — Perot      381
Face-centered cubic (fcc) lattice      5—6
Fall time (BJT)      265
Fat zero      360
Fermi level      71—75 144
Fermi level, invariance at equilibrium      91—92
Fermi level, pinning      189—190
Fermi — Dirac distribution      71
FET      see "Field-effect transistor"
Fiber optics      224—226
Field doping      347
Field oxide      318 340 349
Field-aided diffusion (BJT)      266—267
Field-effect transistor (FET), HEMT      296—298
Field-effect transistor (FET), JFET      288—295
Field-effect transistor (FET), MESFET      295—296
Field-effect transistor (FET), MOSFET      299—327 346—353
Fill factor (solar cell)      217
Fine-line lithography      339
Flat band      310—312
Flip-chip      371—372
Floating zone growth      16—17
Fluorescence      100
Fluorescent lamp      101
Flux density      114
Forbidden band      54
forward bias      see "Specific devices"
Forward-blocking state (p-n-p-n)      402—403
Forward-conducting state (p-n-p-n)      404
Four-layer devices      see "p-n-p-n devices"
Four-point probe      354
Frequency limitations of BJT's      277—279
Furnaces, crystal growth      13—16
Furnaces, diffusion      133
Furnaces, epitaxy      20—24
GaAsP      2 19 59 222—223 387 429
Gain, amplifier      234 238—241
Gain, photomultiplier      220
Gallium arsenide (GaAs), band diagram      59 420
Gallium arsenide (GaAs), diffusion coefficients      117
Gallium arsenide (GaAs), effective mass      65 420
Gallium arsenide (GaAs), growth      14 20—24
Gallium arsenide (GaAs), Gunn diodes      419—429
Gallium arsenide (GaAs), intrinsic carrier concentration      79
Gallium arsenide (GaAs), lasers      387—396
Gallium arsenide (GaAs), mobility      87
Gallium arsenide (GaAs), properties      439
Gallium arsenide (GaAs), velocity-field characteristic      422
Gate, JFET      289 291
Gate, MESFET      295
Gate, MOSFET      300
Gate, SCR      406
Gate, SCS      408
Gauss's law      146 182
Gaussian distribution      123 132 197—198
Generation carrier, optical      108—109 212—213
Generation carrier, thermal      61 65—66 109 152—153 179—180
Generation from a trap      106—107 179—180
Generation, current      152—153 179—180
Geometry, device      see "Specific devices"
Germanium (Ge), diffusion coefficients      117
Germanium (Ge), diode      131
Germanium (Ge), effective mass of carriers      65 68
Germanium (Ge), electronic configuration      47—48
Germanium (Ge), growth      13
Germanium (Ge), intrinsic carrier concentration      79
Germanium (Ge), mobility      87
Germanium (Ge), properties      439
Germanium (Ge), solubility of impurities      444
Giant pulse laser      383—384
Gold (Au), alloying metal      368 409
Gold (Au), conductors in IC's      372
Gold (Au), doping in Si      205 263
Gold (Au), levels in Si      108
Gold (Au), solid solubility in Si      444
Gold (Au), wire bonding      368—371
Grade constant      182
Graded alloy composition      282—283 394
Graded base transistor      266—267
Graded junction      182—183 197 207—208 229
Graded-index, channel laser      394
Graded-index, fiber      225—226
Gradient, carrier      112—118
Gradual approximation (FET)      294
Ground state      45 47 385 386
Grown junction      131 see
Growth of semiconductor materials      12—24
Guard ring      203—204
Gunn effect      419—430
Half-wave rectifier      202
Half-width, channel (FET)      292
Hall effect      89—92
Haynes — Shockley experiment      122—125
HBT      281—283
He-Ne laser      386—387
Heisenberg uncertainly principle      36
HEMT      296—298
Heterojunctions      190—194
Heterojunctions, bipolar transistor(HBT)      281—283
Heterojunctions, laser      392—396
HF, etch of $SiO_{2}$      134
High electron mobility transistor      see "HEMT"
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