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Streetman B.G. — Solid State Electronic Devices
Streetman B.G. — Solid State Electronic Devices



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Íàçâàíèå: Solid State Electronic Devices

Àâòîð: Streetman B.G.

Àííîòàöèÿ:

Solid State Electronic Devices is an introductory book on semiconductor materials, physics, devices, and technology. Now in its sixth edition, the book retains the two basic goals that have helped to make it so successful: 1) develop the basic semiconductor physics concepts to understand current and future devices and 2) provide a sound understanding of semiconductor devices and technology so that that their applications to electronic and optoelectronic circuits and systems can be appreciated.


ßçûê: en

Ðóáðèêà: Ôèçèêà/

Ñòàòóñ ïðåäìåòíîãî óêàçàòåëÿ: Ãîòîâ óêàçàòåëü ñ íîìåðàìè ñòðàíèö

ed2k: ed2k stats

Èçäàíèå: Fourth Edition

Ãîä èçäàíèÿ: 1995

Êîëè÷åñòâî ñòðàíèö: 462

Äîáàâëåíà â êàòàëîã: 03.02.2010

Îïåðàöèè: Ïîëîæèòü íà ïîëêó | Ñêîïèðîâàòü ññûëêó äëÿ ôîðóìà | Ñêîïèðîâàòü ID
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Ïðåäìåòíûé óêàçàòåëü
p-n-p-n devices, SCS      407—408
P-type semiconductor      67 73—75
Packaging, diode      205
Packaging, IC      372—375
Packaging, SCR      410
Parasitic BJT      351
Parasitic elements      280 323 351
Paschen series      32 35
Passive components in IC's      353—357
Pauli exclusion principle      45
Peak-to-valley ratio (tunnel diode)      212
Periodic structures      3
Periodic table of the elements      2 45—48
PGA      373—374
Phonon      86
Phosphor      100
Phosphorescence      100
Phosphorus (P), $k_{d}$ in Si      15—17
Phosphorus (P), diffusion in Si      242—243 284 337 342—343
Phosphorus (P), donor      66
Phosphorus (P), energy level in Si      108
Phosphorus (P), solid solubility in Si      444
Phosphorus (P), source materials for diffusion      134
Photoconductive decay measurement      107—108
Photoconductivity      103 107
Photoconductor      111—112 220
Photocurrent      212—213
Photodetector      111—112 217—222
PhotoDiode      217—222
photoelectric effect      30—31
photolithography      134—135 337—339
photoluminescence      100—102
Photon      31
Photoresist (PR)      134—135 337—339
Photovoltaic effect      214
Physical models      29—30
Piecewise-linear models      202
Pin-grid array (PGA)      373—374
Pinch-off (FET)      291 296 316
Pixel      362
Planar processing      337—339
Planarization      357
Planck's constant      31 438
Planck's distribution      see "Blackbody radiation"
Planes, crystal      7—9
Plasma tube      387
Platinum silicide      190 350
PMOS      see "p-channel"
pn product      77 110
Poisson's equation      146 182 305
Polycrystalline Si      318 324 340—341 347—349 356
Polycrystalline solids      4
Population inversion      380
Potential barrier      40—43
potential energy      34 38
Potential well      see "Quantum well"
Potential, electrostatic      16 140 150—151
PR      see "Photoresist"
Praseodymium (Pr)      385
probability      37
Programmable ROM (PROM)      364—365
Projected range      136—137
Projection printing      338
Propagation vector      57—59 63—64
Properties, semiconductor      439
Pseudomorphic growth      19 298
Pumping, optical      381 383
Punch-through      204 269
Q-switched laser      383—384
Quantization      31 41 44
Quantum efficiency      101
Quantum mechanical operators      38
quantum mechanics      36—45
Quantum number      41 43—45
Quantum well      40 69—70 194
Quantum well, laser      395—396
Quantum well, tunneling in      416—418
Quasi-Fermi level      110—111
Quasi-Fermi level, gradients in      124—125
Quasi-steady state approximation      169
Quaternary alloy      2 18—19 283 396
Quenched domain mode (BNDC devices)      425—426 428
QWITT      416—418
Radiation damage      138
radiative recombination      58 99—103 222—224 387—396
Random access memory (RAM)      363—365
Random motion      82 112—114
Range of implanted ions      136—137
Rare earth laser      385
Rayleigh scattering      226
Reach-through      see "Punch-through"
Reactor      see "Epitaxial growth"
Read diode      413
Recombination current      156—158 178—180
Recombination level      100 106 108 179—180
Recombination, carrier      66 100—109
Rectifier      201—205
Red emission, from GaAsP      222—223
Reference diode      206—207
Reflow glass      347
Refractive index      224—225 391 394
Resistance, base      272—276 281
Resistance, collector      276
Resistance, negative      208—211 415 417 421
Resistance, sheet      354
resistivity      85 90 354
Resistor, diffused      353—354
Resistor, thick film      335
Resistor, thin film      335
Resonant cavity, microwave      413 425
Resonant cavity, optical      381
Resonant circuit, BNDC modes in      425
Resonant circuit, IMPATT operation      414
Resonant circuit, varactor tuning      207
Resonant tunneling      416—418
Reverse current      152 156 163 181—213
Reverse recovery transient      170—173
Reverse-blocking state (p-n-p-n)      400—401
Ridley — Watkins — Hilsum mechanism      421
RISC      366
Rise time (BJT)      265
Ritz combination principle      33
Ruby laser      382—383
Runaway, thermal (BJT)      271
Rydberg constant      32 35
Salicide      349—350
SAPpHiRe      351
Satellite valley      59—60 420
Saturated drain current      291 294 316
Saturation current, reverse, BJT      253—254
Saturation current, reverse, junction      153—154 156
Saturation of a BJT      259—261
Saturation, velocity      88 295 298—299
SB      see "Antimony"
Scattering limited velocity      see "Saturation velocity"
Scattering mechanisms      86—88
Schottky barrier      184—190 295
Schottky diode clamp      264
Schrodinger equation      38—40 43—44 441
SCR      see "Semiconductor controlled rectifier"
Scribing of wafers      332
SCS      see "Semiconductor controlled switch"
SEDFET      298
Seed crystal      13 17 20
Segregation coefficient      see "Distribution coefficient"
Selective diffusion      132—135 337—338
Self-aligned MOS transistors      322—324 349
Self-compensation      224
Semi-insulating GaAs      295
Semiconductor controlled rectifier (SCR)      406—411
Semiconductor controlled switch (SCS)      407—408
Semiconductor, band gap      3 54—60
Semiconductor, degenerate      208—209 388—389
Semiconductor, growth      12—25
Semiconductor, materials      2 439
Semiconductor, properties      439
Separate confinement laser      394
Shallow levels      66—69 108
Sheet resistance      354
Shell, atomic      45
Shockley diode      401
Short-channel effects      298—299 325—327
Short-circuit saturation currents (BJT)      253—254
Shorted emitter      409
Shot noise      220
Sidewall capacitance      340
Sidewall spacer      347—349
Siemens      294
Silane      21
Silica      see also "Silicon dioxide"
Silica, crucible      12—13 17
Silica, furnace tube      13 133
Silicide      190 349—350
Silicon (Si)      see also "Specific devices"
Silicon (Si), diffusion coefficients impurity      198 284 374
Silicon (Si), diffusion coefficients, carrier      117
Silicon (Si), distribution coefficients of impurities      15 26
Silicon (Si), effective mass of carriers      65
Silicon (Si), electronic configuration      48
Silicon (Si), growth      12—17 21
Silicon (Si), impurity levels      108
Silicon (Si), intrinsic carrier concentration      79
Silicon (Si), mobility      87
Silicon (Si), properties      439
Silicon (Si), solubility of impurities      444
Silicon controlled rectifier      see "Semiconductor controlled rectifier"
Silicon dioxide $(SiO_{2})$, dielectric isolation      340—341
Silicon dioxide $(SiO_{2})$, masking      see "Oxide masking"
Silicon gate technology      see "Polycrystalline Si"
Silicon nitride $(Si_{3}N_{4})$      138 319 340—341
Silicon on insulator      see "SOI"
Silicon on sapphire (SOS)      351—353
SIMOX      353
Simple cubic (sc) lattice      5
Sodium ion      52 310—311
SOI      351—353
Solar cell      215—217
Solid solubility      444
Solution epitaxy      19—21
Sos      351—353
Source, diffusion      134
Source, of an FET      289 300
Space charge neutrality      81
Space charge region      see "Transition region"
Space charge, build up of      422—423
Space-charge limited current      326
Spectra, atomic      31—33
Spectroscopic notation      48
Spectrum, relation to semiconductor band gaps      99
Spin      44—45
Spontaneous emission      378—379 390
sputtering      335
Square-law FET characteristic      294
Stable domain      423—426
Statistics      71
Step junction      138
Step-and-repeat      338
Step-index fiber      224—225
Stimulated emission      378—379 390
Storage delay time      170—172 262
Strained layers      19 298
Stripe geometry, BJT      273—275
Stripe geometry, laser      393—396
Strong inversion      304—305
Submicron linewidths      339
Subsidiary minima      see "Satellite valley"
Substrate      17 20
Substrate bias      320—322
Subthreshold current      327
Superlattice      19 23
Surface charge      see "Surface states"
Surface FET      see "Induced-channel"
Surface mobility      315
Surface potential      304—305 357—359
Surface states      189 310—312
Susceptor      21
Sustaining field (BNDC devices)      426
Switching, BJT      257—265
Switching, diode      167—173 205
Switching, SCR      410—411
Symbols, commonly used quantities      433
Symbols, solid state devices      445
Symmetrical BJT      244
Tantalum      335—336
Tape-automated bonding (TAB)      373
TEGFET      298
Television      102 362
Temperature dependence, carrier concentration      78—80
Temperature dependence, intrinsic carrier concentration      78—79
Temperature dependence, mobility      86
Terminal currents (BJT)      246—250
Ternary alloy      2 18—19 58—60 see "GaAsP" etc.
Testing of IC's      367—368
Thermal effects in a BJT      271
Thermal generation of carriers      see "Generation"
Thermal oxidation of Si      see "Oxidation"
Thermal relaxation time      358
Thermal runaway (BJT)      271
Thermal velocity      87
Thermionic emission      190
Thermocompression bonding      368—371
Thick films      335
Thin films      335
Threshold, field (BNDC device)      420
Threshold, pumping level (laser)      383
Threshold, voltage (MOSFET)      301
Thyristor      351 406—411
Time, decay (photoconductive)      104—108
Time, delay      265 407
Time, fall, rise (BJT)      265
Time, storage delay      170—172 262
Time, turn-off, turn-on (BJT)      261—265
Transconductance, BJT      277—278
Transconductance, JFET      294
Transconductance, MOSFET      317
Transferred electron mechanism      419—421
Transient behavior, BJT      257—265
Transient behavior, diode      166—173
Transistor action in a p-n-p-n device      401
Transistor, BJT      235
Transistor, JFET      288
Transistor, merged      344
Transistor, MESFET      295
Transistor, monolithic (IC)      341
Transistor, mosfet      299
Transit time      240 279 407 413—419 425—428
Transit time mode (BNDC device)      425—428
Transition region, capacitance      173—175
Transition region, definition      141
Transition region, field      145—146
Transition region, generation and recombination in      178—180
Transition region, population inversion in      389
Transition region, width      147
Transitions, direct      57 60 101 443
Transitions, indirect      57 60 106 443
Transport factor, base      238—239 250
TRAPATT      418—419
Trapping      107
Trench capacitor      355—356
Trench isolation      341
1 2 3 4 5
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