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Streetman B.G. — Solid State Electronic Devices
Streetman B.G. — Solid State Electronic Devices



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Íàçâàíèå: Solid State Electronic Devices

Àâòîð: Streetman B.G.

Àííîòàöèÿ:

Solid State Electronic Devices is an introductory book on semiconductor materials, physics, devices, and technology. Now in its sixth edition, the book retains the two basic goals that have helped to make it so successful: 1) develop the basic semiconductor physics concepts to understand current and future devices and 2) provide a sound understanding of semiconductor devices and technology so that that their applications to electronic and optoelectronic circuits and systems can be appreciated.


ßçûê: en

Ðóáðèêà: Ôèçèêà/

Ñòàòóñ ïðåäìåòíîãî óêàçàòåëÿ: Ãîòîâ óêàçàòåëü ñ íîìåðàìè ñòðàíèö

ed2k: ed2k stats

Èçäàíèå: Fourth Edition

Ãîä èçäàíèÿ: 1995

Êîëè÷åñòâî ñòðàíèö: 462

Äîáàâëåíà â êàòàëîã: 03.02.2010

Îïåðàöèè: Ïîëîæèòü íà ïîëêó | Ñêîïèðîâàòü ññûëêó äëÿ ôîðóìà | Ñêîïèðîâàòü ID
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Ïðåäìåòíûé óêàçàòåëü
High frequency effects in BJT's      279—280
High-level injection, BJT      271
High-level injection, diode      176—177
Holding current (SCR)      407
Hole mobility      see "Mobility carrier"
Hole, as a carrier      61—63
Hole, capture at a center      106 179—180
Hole, concentration      73—77
Hole, effective mass      64—65
Hole, quasi-Fermi level      110 124—125 389
Hole, trap      106—107
Hot carrier effects      88 419
Hybrid circuit (IC)      334—336
Hybrid-pi model (BJT)      277
Hydrofluoric acid      see "HF"
Hydrogen atom, Bohr model      33—35
Hydrogen atom, emission spectra      32
Hydrogen atom, energy states      33 46
Hydrogen atom, quantum mechanical model      42—45
Hyperabrupt junction      207—208
I-V characteristics      see "Current voltage characteristics"
IC      see "Integrated circuit"
Ideal diode      202
Ideality factor      178
IGFET      299
Illuminated junction      212—214
Impact ionization      164—166
IMPATT diode      413—416
Implantation      see "Ion implantation"
Impurity      see also "Donor" "Acceptor"
Impurity, distribution coefficients      15
Impurity, levels in Si      108
Impurity, scattering      86
Impurity, solid solubilities in Ge and Si      444
IMREF      110
Indirect semiconductor      57—60
Indirect transitions      57 106 439
Indium (In) alloy in Ge      131—132
Induced-channel      300—301 305
Infrared detector      111—112 217—221
Infrared emission      222—224
Infrared relation to certain band gaps      99
InGaAs      18—19 189 219
InGaAsP      18—19 226 396
Ingot (Si)      14
Inhibited mode (BNDC device)      425—426
injection laser      387—396
Injection, carrier      120—122 154—160
Injection, carrier, efficiency of a junction      195
Injection, carrier, electroluminescence      222—224 387—396
Injection, carrier, relation to contact potential      177—178
Injector rail $(I^{2}L)$      345—346
InP      18—19 219 226 422
Instabilities in semiconductors      422
Instantaneous-source diffusion      see "Limited-source diffusion"
Insulated-gate FET      see "IGFET"
Insulator      56
Integrated circuit (IC), devices      334—336
Integrated circuit (IC), economics      332—334
Integrated circuit (IC), fabrication      336—341
Integrated circuit (IC), types      334—336
Integrated injection logic $(I^{2}L)$      344—346
Interconnections in IC's      356—357
Interdigitated structure      272—275 280
Interface states      189 310—312
Intermetallic compounds      2
Intrinsic carrier concentration      78—79
Intrinsic level      76—77 117
Intrinsic photodetector      218
Intrinsic semiconductor      65—66 75 79
Inverse temperature      78
Inversion, population      380
Inversion, region, FET      300—301 305
Inversion, region, laser      388—389
Inverted mode (BJT)      252—253
ion implantation      136—138 319 323
Ionic bonding      52
Ionization energy (impurity)      68 108
Ionization region      79—80
Ionized impurities      66—69 80—81
Isolation in IC's      339—341
Isolator, optoelectronic      224
Isoplanar      343—344
JFET      288—295
Johnson noise      220
Junction      see "p-n junction"
Junction capacitance      see "Capacitance"
Junction field-effect transistor (JFET)      288—295
Junction isolation      340 342—343
Junction laser      387—396
Kerr cell      384
kinetic energy      34 38
Large-scale integration (LSI)      363—367
LASCR      404
Laser, conditions      377—380
Laser, gas      385—387
Laser, giant pulse      383—384
Laser, junction      387—396
Laser, rare earth      385
Laser, ruby      382—383
Latchup (CMOS)      351
Lateral transistor      343
Lattice constant      5 439
Lattice matching      17—19
Lattice scattering      86—87
Lattice, crystal      3—5
Lattice, crystal of common semiconductors      439
Lattice, crystal, definition      4
Lattice, crystal, planes and directions      7—9
LDD      326—327 347—349
Lead bonder      368—371
Lead frame      369
LEC      14
LED      222—224
Lifetime, carrier      103—109
Lifetime, carrier, definition      104
Lifetime, carrier, measurement      107—108 173
Light-activated SCR (LASCR)      404
Light-emitting diode (LED)      222—224
Light-sensitive diode      see "Photodiode"
Lightly-doped drain      see "LDD"
Limited space charge accumulation      see "LSA mode"
Limited-source diffusion      132 197—199
Linearly graded junction      182—183 207
Liquid-encapsulated Czochralski (LEC)      14
Liquid-phase epitaxy (LPE)      19—21
Lithography, electron beam      339
Lithography, optical      134—135 337—339
Lithography, x-ray      339
Load line      233—234
Local oxidation of Si      340—341 347
Low-level injection      104
LSA mode      425 427—428
LSI      363—367
Luminescence      99—103
Luminescence, cathodoluminescence      102—103
Luminescence, electroluminescence      103 222—224 387—397
Luminescence, photoluminescence      100—101
Lyman series      32 35
Majority carrier, concentration      80—81
Majority carrier, current      160—161
Majority carrier, definition      69
Mask generation      337—339
Mask, photolithographic      134—135 337—339
Masking      see "Oxide masking"
Mass      see "Effective mass"
Matrix mechanics      36
Maximum depletion width (MOS)      307
Maximum field in a junction      145—146
Maximum power in a solar cell      216—217
Maxwell — Boltzmann statistics      71
MBE      23—24
Mean free path      113—114
Mean free time      83—84 113—114
Melt, growth from the      12—17 19—21
Melting points for semiconductors      439
Merged transistor logic (MTL)      344—346
MESFET      295—296
Metal organic growth      22
Metal, bonding      53
Metal, energy band      56
Metal, impurities in Si      108
Metal, work function      31 184—189 301—302 310—311
Metal-insulator-semiconductor (MIS) structure      299—327 346—353
Metal-oxide-semiconductor (MOS) structure, capacitor      301—314 355—357
Metal-oxide-semiconductor (MOS) structure, charge-coupled device      357—362
Metal-oxide-semiconductor (MOS) structure, transistor      300 314—327 346—353
Metal-semiconductor junction      184—190 264 295
Metallization      135 356—357
Metallurgical base width (BJT)      268
Metallurgical channel (FET)      292
Metallurgical junction      145
Metastable state      383 385
Microcomputer      365
Microelectronics      see "Integrated circuit"
Microprocessor      365
Microwave devices, Gunn effect      419—430
Microwave devices, IMPATT      413—416
Microwave devices, transistor      279—281
Miller indices      7
miniaturization      332—333
Minority carrier, concentration      77 104—105 109
Minority carrier, current in a junction      152 160—161
Minority carrier, definition      69
Minority carrier, diffusion      112—115
Minority carrier, distribution in a BJT      244—246 252 260
Minority carrier, distribution in a junction      154—155 159
Minority carrier, extraction      160
Minority carrier, gradient      112 115
Minority carrier, injection      120—121 154
Minority carrier, lifetime      104
Minority carrier, pulse      122—125
MISFET      299—327 346—353
Mobile carriers      see "Electron" "Hole"
Mobility, carrier, definition      84
Mobility, carrier, measurement      90 121
Mobility, carrier, relation to diffusion coefficient      117 124
Mobility, carrier, surface      315
Mobility, carrier, typical values      87 439
Mobility, carrier, variations, doping      87
Mobility, carrier, variations, field      88 421
Mobility, carrier, variations, temperature      86
MOCVD      22
Models      see "Circuit models" "Physical
Modes of operation, BNDC devices      425—429
Modes, laser      381 390—391
MODFET      296—297
Modified work function      301
Modulation doping      296—297
molecular beam epitaxy (MBE)      23 24
Momentum, angular      33
Momentum, carrier      58 63 82—83 223
Momentum, operator      38
Momentum, relation to propagation vector      58
Monolithic circuit, capacitor      355—356
Monolithic circuit, definition      334
Monolithic circuit, diode      353
Monolithic circuit, resistor      353—355
Monolithic circuit, transistor      342—353
MOS      see "Metal-oxide semiconductor"
MOSFET      299—327 346—353
MTL      344—346
Multi-chip module      373
Multilayer growth      23
Multilayer metallization      356
multimode fiber      227
Multiple-level impurities      108
Multiple-point probe      367—368
Multiplication factor, avalanche      165—166 220 270 405
Mutual transconductance      see "Transconductance"
n-channel      289 317
n-p-n transistor      233 237—238 243 342—346
N-type semiconductor      66 73—75
Nail-head bond      370—371
Narrow base diode      206 228
Nearest neighbor distance      6 11
Negative differential conductivity      421
Negative mass      64
Negative mobility      421 424
Negative resistance      208—211 415 417 421
Negative temperature      380
Neodymium (Nd)      385
Net doping concentration      80—81 131 182—183
Neutral region      139
Neutrality      81
Nitride passivation      see "Silicon nitride"
Nitrogen center in GaAsP      223
nL product (BNDC devices)      424
NMOS      see "n-channel"
Noise      220
Nonequilibrium conditions      109
Normal active mode (BJT)      251
Normal mode components (BJT)      252
Normalization      38
Normally on and normally off FET's      301
Notation for currents and voltages      437
np product      77 110
Off state (BJT)      257—259
Offset voltage      202
Ohm's law      84 125
Ohmic contact      85 131 187—189
Ohmic losses      181
OMCVD      22
On state (BJT)      257 259—263
Open circuit, saturation currents in a BJT      254—255
Open circuit, voltage of a photodiode      213 216
Optical absorption      96—99 379
Optical fiber amplifiers      385
Optical fibers      224—226
Optical generation of carriers      108—109 212—213
Optical pumping      381 383 385
Optical spectrum      99
Optoelectronic pair      224
Orbit, Bohr      33—35
Organometallic growth      22
Oxidation of Si      134—135 337 340—341
Oxide charge      310—312
Oxide masking      134—135 337
Oxygen, introduction in crystal growth      17
Oxygen, solid solubility in Si      444
P      see "Phosphorus"
p-channel      301 308 312—313 319 321 350
p-i-n diode      218
p-n junction diode      see "Diode"
p-n junction, alloyed      131—132
p-n junction, band diagram      140 144 150 164 177 179
p-n junction, breakdown      see "Breakdown"
p-n junction, capacitance      173—176
p-n junction, current-voltage characteristic      153 156 163 176 181
p-n junction, diffused      134—135
p-n junction, forward and reverse bias      149—162
p-n junction, graded      182—183 197 207—208 229
p-n junction, grown      131
p-n junction, implanted      136—138
p-n junction, transient effects      166—173
p-n junction, transition region      141 144—149
p-n-p transistor      see "Bipolar junction transistor"
p-n-p-n devices, bilateral      408—409
p-n-p-n devices, diode      400—406
p-n-p-n devices, SCR      406—411
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