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| Czanderna, Madey, Powell — Beam Effects, Surface Topography, and Depth Profiling in Surface Analysis (Methods of Surface Characterization) |
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| Предметный указатель |
Sputter depth profiling (SDP) nanotopography 143—149
Sputter depth profiling (SDP) nonconsumptive methods 363
Sputter depth profiling (SDP) oxidized surfaces 398 409—411
Sputter depth profiling (SDP) principles 98—103 357—360
Sputter depth profiling (SDP) rate 101
Sputter depth profiling (SDP) single crystals 227 228
Sputter depth profiling (SDP) topography development 105 168—201
Sputter depth profiling (SDP) with Zalar rotation 228—247
Sputter depth profiling (SDP), analysis of 382—386
Sputter depth profiling (SDP), Auger analysis with 80—85
Sputter depth profiling (SDP), charging in 389—392
Sputter depth profiling (SDP), contamination in 227
Sputter depth profiling (SDP), damage in 100 106 109 139—168 202
Sputter depth profiling (SDP), defect formation in 105
Sputter depth profiling (SDP), depth resolution in see “Depth resolution”
Sputter depth profiling (SDP), differential sputtering in 103 202 203 228 386
Sputter depth profiling (SDP), erosion rates in 101 175 381
Sputter depth profiling (SDP), evaluation of 394—397
Sputter depth profiling (SDP), failure analysis with 408
Sputter depth profiling (SDP), gases used in see “Ar Cs He Kr Ne Xe”
Sputter depth profiling (SDP), redeposition in 100 202 240
Sputter depth profiling (SDP), segregation in 105 122 132 202 203 211
Sputter depth profiling (SDP), structural changes in 103 118 139—168
Sputter depth profiling (SDP), time required see “Erosion rates”
Sputter depth profiling (SDP), trapping gases in 100 105 107 110—118
sputtering 99 116 123—125 131—138 373—375
Sputtering angle of incidence effect 375
Sputtering atomic number 374
Sputtering charge states 357
Sputtering chemical 123
Sputtering clusters of atoms 357
Sputtering crystallographic orientation 131
Sputtering depth of origin 125 373—375
Sputtering differential 131—133 175 371
Sputtering electronic 123 366
Sputtering physical 99 116 123—125 366
Sputtering simulations 135—138
Sputtering single crystals 370
Sputtering threshold 124
Sputtering topography development 171 175
Sputtering yields 103 125—131 135—138 175 369—377
Stainless steel topography 304 305
Standards 311 314
Standards in SDP 255
Standards, ASTM 86 255
Standards, ISO 104
Steel, AES of oxidized 84
Stylus instruments 291—302 339 340
Stylus instruments applications 300
Stylus instruments area profiling 300—302
Stylus instruments calibration 299 300
Stylus instruments computer data storage 299
Stylus instruments constraining unwanted motion 293
Stylus instruments contact loss 299
Stylus instruments damage 296 297
Stylus instruments distortions 297—299
Stylus instruments height resolution 291—293
Stylus instruments lateral resolution 293—296
Stylus instruments linear variable differential transformer 292 297
Stylus instruments load and damage see “Damage”
Stylus instruments profiles 280—283 301 302
Stylus instruments range 291—293
Stylus instruments speed 247
Stylus instruments spherical tips 295
Stylus instruments stylus tip size 291
Stylus instruments surface profiles 291
Stylus instruments three dimensional maps 301 302
Stylus instruments tip shape 296
Subsurface bubbles 143—145
surface see “Topography”
Surface adatoms 139—148
Surface area 278
Surface bonds 139
Surface clusters 139
Surface compositional changes 201—226
Surface contaminants 42
Surface defect formation 149—154
Surface enrichment 203
Surface reactions see “Chemical reactions”
Surface segregation see “Sputter depth profiling (SPD) segregation
Surface structure 139—168
Surface topography 275—354; see also “Topography surface
Surface vacancy islands 143—149
Surface, depletion in AES see “ESD”
Surface, potential 5 9 13 19 59
Surface, roughness 328 329
Surface, thermodynamics 132
Tantalum 99 101 132
Tantalum oxide 99 101 132 215 217 237 239
Tantalum oxide, ISS SDP 215
Tantalum oxide, SIMS SDP 99
| Tantalum oxide, standard for depth resolution 101
Tantalum-silicon alloys 398
Tapered section profiling 362 364
Teflon 15 198 203
Temperature rise in AES 65
Ternary alloys 210
Thin film interdiffusion 298
Threshold of electron beam damage 54—58
Threshold of sputtering 124
Tin oxide 72 216
Tin-lead alloys 209
titanium carbide 117 226
Titanium nitride multilayers 214
Titanium oxides 214—219 333
Titanium silicate 223
Topagrafmer see “Scanned probe microscopies”
Topography see also “Sputter depth profiling (SPD)”
Topography development in sputter depth profiling 103 168—201
Topography development in sputter depth profiling, bands from combined beam effects 249 250
Topography development in sputter depth profiling, bubble formation 194
Topography development in sputter depth profiling, chromium-nickel multilayers 169—171 174 175 196 199 200 241—247 398
Topography development in sputter depth profiling, complexity of 169 197
Topography development in sputter depth profiling, cones 182—189 197
Topography development in sputter depth profiling, corrugation 189—193
Topography development in sputter depth profiling, depth resolution effect 168
Topography development in sputter depth profiling, diffusion ofadatoms 172
Topography development in sputter depth profiling, etchpitch 176—181
Topography development in sputter depth profiling, feature size 174 182 188
Topography development in sputter depth profiling, impurity seeding 171 182 189 197
Topography development in sputter depth profiling, incidence angle effects 169 178 181 186 189
Topography development in sputter depth profiling, island coalescence 193 194
Topography development in sputter depth profiling, Kapton 198
Topography development in sputter depth profiling, mechanisms 169—173 182 195 197
Topography development in sputter depth profiling, minimization of 192 201
Topography development in sputter depth profiling, non-noble ion sputtering 198—201
Topography development in sputter depth profiling, non-uniform erosion 171
Topography development in sputter depth profiling, pit width 179
Topography development in sputter depth profiling, predictive models 169 176 195 201
Topography development in sputter depth profiling, pyramids 181 182
Topography development in sputter depth profiling, redeposition 172
Topography development in sputter depth profiling, ripples 189—193
Topography development in sputter depth profiling, roughness 173—176
Topography development in sputter depth profiling, sample parameter influences 169
Topography development in sputter depth profiling, seed cone formation 171
Topography development in sputter depth profiling, smoothing 195
Topography development in sputter depth profiling, swelling 194
Topography development in sputter depth profiling, Teflon 198
Topography development in sputter depth profiling, trenching 178
Topography development in sputter depth profiling, whiskers 172 189
Topography surface characterization 275—364
Topography surface characterization, area averaging 276 277
Topography surface characterization, area profiling 276 277 300—302
Topography surface characterization, autocovariance and autocorrelation 287—290
Topography surface characterization, bandwidth limits in surface metrology 290
Topography surface characterization, definitions 276
Topography surface characterization, interferometer microscopes 339 340;
Topography surface characterization, optical profiling techniques 302—307
Topography surface characterization, power spectral density 286 287
Topography surface characterization, reference-surface maps 305
Topography surface characterization, rms roughness 281—283
Topography surface characterization, roughness 276
Topography surface characterization, scanned probe microscopies see “SPM”
Topography surface characterization, shape parameters 284 285
Topography surface characterization, spatial wavelength parameters 283 284
Topography surface characterization, statistical analyses 279 281—290
Topography surface characterization, stylus instruments 279—281; see also “Stylus instruments”
Topography surface characterization, surface parameters 281—285
Topography surface characterization, texture 276
Topography surface characterization, three dimensional measurements 301 302
Topography surface characterization, waviness 276
Transmission electron microscopy (ТЕМ) 141 150 157 160 173 278
Ultrahigh vacuum 255 394
Ultraviolet absorption 23
Ultraviolet photoelectron spectroscopy see “UPS”
UPS 1 142
Uranium fluoride 68
Uranium oxide 68
Vacuum requirements in SDP 100 255 394
Valence level states 42
X-ray fluorescence 363
X-ray photoelectron spectroscopy (XPS) 1 103 115 150 200 202—205 207 212 216—225 244 357 359 361 363 365 386 401 402
X-ray photoelectron spectroscopy (XPS) small spot 13 20
X-ray photoelectron spectroscopy (XPS) with SDP 103 359 361
X-ray photoelectron spectroscopy (XPS), charging in 3—13
X-ray source 5
Xenon (Xe), ion bombardment 126 144—150 157 165 168 190 192 197 198 204 209 231 239 245
Yields in sputtering see “Sputter depth profiling (SPD)” “Sputtering
Zalar rotation 199 228—247
Zinc cadmium telluride 164
Zinc selenide 47
Zinc-copper alloys 209
Zone ofmixing 109 133—139 202 209 376 388
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