Czanderna, Madey, Powell — Beam Effects, Surface Topography, and Depth Profiling in Surface Analysis (Methods of Surface Characterization) :: Электронная библиотека попечительского совета мехмата МГУ

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Czanderna, Madey, Powell — Beam Effects, Surface Topography, and Depth Profiling in Surface Analysis (Methods of Surface Characterization)

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Название: Beam Effects, Surface Topography, and Depth Profiling in Surface Analysis (Methods of Surface Characterization)

Авторы: Czanderna, Madey, Powell

Аннотация:

Presents a discussion of the damage and artifacts resulting from the beams used in surface compositional analysis or for sputter depth profiling. The first chapter deals with photon beam damage in the surface and near-surface of solids, and especially the damage from X- rays used in X-ray photoelectron spectroscopy. In the second chapter, the fundamentals of electronic-excitation processes are discussed. The third chapter is concerned with ion-bean- bombardment effects on solid surfaces at energies used for sputter depth profiling. The fourth chapter is an overview of profiling methods used for the characterization of surface topography. An overview of sputter depth profiling for near-surface compositional analysis is provided in the fifth and final chapter.

Язык:

Рубрика: Математика/Вероятность/Статистика и приложения/

Статус предметного указателя: Готов указатель с номерами страниц

ed2k: ed2k stats

Год издания: 1998

Количество страниц: 451

Добавлена в каталог: 28.05.2005

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Предметный указатель

$\textrm{CuO}_{0 \, 67}$       400 402 403
Acronyms and abbreviations in surface analysis      273 274 356
Adatom yields      148
Adatoms      44—149
Adsorption, residual gases      394; see also “Chemisorption”
Adventitious carbon      see “Carbon adventitious”
AES      39 103 140 150 157 202 203 208 210 221—224 243 357 359 361 363—365 386 398 400 407
AES advantages      365
AES artifacts      132
AES, charging in      see “Charging effects”
AES, compared with other techniques      115
Alloy compositional changes      206—211
Altered layer      see “Zone mixing”
Aluminum      130 196
Aluminum alloys      164
Aluminum gallium arsenide      129 164 198 201 387
Aluminum oxidation by electron beam and water      53
Aluminum oxide      15 17 51 130
Aluminum windows in XPS      3 5
Aluminum, secondary electrons from      4—6
Aluminum, XPS spectrum of      16
Amorphization      see “Ion beams”
Analysis of materials or devices      355
Angular mapping      362
Angular resolved XPS      107
Argon (Ar), bombardment      101 106 112—114 117 118 126 129 130 131 135—138 141 143—150 155—158 162 164 65 168 174 176 179 192 195 199 203 206—212 216—225 231—239 378 397—411
ASTM standards      86 255
Atomic force microscopy (AFM)      173 189—191 199 307—334
Atomic relaxation      14
Atoms in solids, binding energy      see “Chemical bond
Attractive pairpotentials      see “Interaction potentials”
Auger electron spectroscopy      39; see also “AES”
Auger neutralization      107
Auger parameter      18—20
Auger stimulated desorption      23 45
Auger, deexcitation      107
Auger, electron emission      108
Backscattering in SDP      10
Backscattering in XPS      13
Backscattering of electrons      4
Ballistic (mixing) regime      see “Binary collisions”
Beam damage in AES      39—87
Beam damage in SDP      see “Sputter depth profiling (SPD) damage
Beam damage in XPS      20—35
Beam rastering      see “Ion beams rastering”
Benzene damage      30
Berylium      189
Binary scattering      107 110 118—122 134 366—378
Binding energies in SDP      23 41—45 124 139 202 371 375
Binding energies in XPS      2 13—18
Binding energy artifacts      8
Binding energy scale calibration      18
Bindingenergy absolute      18
Bombardment induced light emission (BLE)      356 359 361
Bond stretching      139
Boron oxide decomposition      51
Cadmium sulfide      45 47
Cadmium telluride      47 164
Calcium fluoride decomposition      51
Calcium surface depletion in AES      63
Calibration ofspectrometers      18
Carbon adventitious      14 15 203 224 227
Carbon AES spectra      44
Carbon binding energy      14
Carbon carbide formation      225
Carbon monoxide      42 44 48
carbon nanotube      316
Carbon ubiquitous      14 15
Cascade mixing      107 116 119 121 376
Catalysts      402 409
Cazaux model for charging      29 60 79
Cazaux nomogram for X-ray dose      21
Cesium (Cs) ion beams      110 129 198 378
Channeling in SDP      see also Sputter depth profiling(SPD) singlecrystals”
Channeling of surfaces      1 10
Charge neutralization      see “Charging effects” “Resonance
Charging effects in SDP      389—392
Charging effects in UPS      1 13
Charging effects in XPS      1—13 34
Charging effects on insulators      12 16 34 58—60
Charging effects with thin conducting layers      12 13
Charging effects, AES      13 40 58—60 92 93
Charging effects, andionic conductivity      9
Charging effects, Auger parameter and      8—20
Charging effects, compensation of      6 10—17
Charging effects, differential      8—10 12
Charging effects, positive charge accumulation      3
Charging effects, with monochromatic X-rays      3 10 13
Chemical bond breaking      23 25 41—15 70 87 88 139 159—163 202
Chemical reactions, electron induced      39 40
Chemical reactions, ion beam induced      201—226
Chemical reactions, photon induced      20—23 34
Chemical structure changes      40
Chemisorption $\textrm{CH}_4$ on Si      48
Chemisorption $\textrm{C}\textrm{H}_4$ on Si      48
Chemisorption CO on lr (110), ESD of      42
Chemisorption CO on Si      48
Chemisorption CO on Si (111), ESD of      44
Chromate decomposition      51—53
Chromium oxidation      409
Chromium-nickel multilayers      169—171 174 175 196 199 200 241—247 398
Clean surfaces      202 211 224 227
Clusters      144—149
Coatings industries (AFM)      327
Cobalt silicides      223
Collision cascade in SDP      102 107 108 119 174 202 367
Color changes in AES      65—68
Compositional changes      40 201—226
Configuration coordinates      24
Contaminant effects      20—23 34 39 40 201—226
copper      239 240
Copper oxides      398 400
Copper sulfate decomposition      25—27
Copper, alloys      226; see also “Specific alloys”
Copper, argon bombardment      131 144—147 168 176
Copper, depth profiles      245
Copper, nanotopography      144—148 168
Copper-gold alloys      398 400
Copper-indium-diselenide      212
Copper-lithium alloys      207
Copper-nickel alloys      207
Copper-titanium alloys      209
Copper-zirconium alloys      209
Core level states      42
Crater shapes      239 240 391—393
Crater-wall profiling      362 364
Cross section for electron-induced damage      55—57
Cross section for x-ray induced damage      23 24
Damage flux levels      28 54—58 106 163 164
Damage to surfaces by electrons      39—87
Damage to surfaces by ion beams      100 139—168
Damage to surfaces by photons      20—35
Damage to surfaces threshold by electrons      54—58
Data storage industries      325 326
Decomposition of surfaces and films      49—53; see also “Damage to surfaces”
Defect annihilation      40 149 154 168
Defect metastability      167
Defect production in AES      40
Defect production in SDP      106 108 118—122 139—168 176 202 209 253
Defect production in XPS      23
Definitions in surface analysis      103
Depth analysis      356
Depth distribution, simulations      135—138
Depth of sampling      125
Depth profile(s)      see “Sputter depth profiling (SPD)”
Depth profiling      see also “Sputter depth profiling (SPD)”
Depth profiling artifacts      100
Depth profiling by sputtering      98—100; see also “Sputter depth profiling (SPD)”
Depth profiling cratering      99 239 240 391—393
Depth profiling erosion rate      101 175 381

Depth profiling ideal      98
Depth profiling in AES      103
Depth profiling in SIMS      103
Depth profiling in XPS      103
Depth profiling instrumentation      358 360 379 381
Depth profiling principles      98—103 357—360
Depth profiling resolution      99 103
Depth resolution analysis method      241—247
Depth resolution angle of incidence      235 237 240
Depth resolution beam energy      231—239
Depth resolution beam inhomogeneities      393
Depth resolution calibration standards      396
Depth resolution current density effect      233
Depth resolution definition      94 395
Depth resolution in sputter depth profiling      99 227—249 254 394—396
Depth resolution limiting      101 103 247—249 388
Depth resolution model surfaces      230 396
Depth resolution nature of sample      227—231 389—391 396
Depth resolution nickel-chromium multilayers      229 232 233 235 239 243—247
Depth resolution rotation, with and without      242—247
Depth resolution time of bombardment      228
Depth resolution total ion dose      234
Depth resolution Zalar rotation      228—247
Depth resolution, degradation in      231 387
Depth resolution, Gaussian error function      395
Depth resolution, grazing incidence      240
Depth resolution, instrumental factors      239—247 391—393
Depth resolution, ion beam effects      231—239; see also “Zone of mixing”
Desorption, electron stimulated      see “ESD”
Detect recombination      120—123 147—149 154 168 202
Detection limits in surface analysis      396 397
Deuterium trapping      115 117
Diamond tool edge      330
Differential sputtering      103 202 203 228
Differential surface charging      8
Diffusion, surface enhanced      163—166
Diffusional mixing      122 123 163—166
Dissociative ionization      56
Dose (ion)      103
Dose (ion), distinction from ion fluence      104
Dose (ion), magnitudes      104 105
Doses, critical electron for damage      57
EID      see “ESD”
Ejected particles blocking and channeling      124 125
Ejected particles surface structural influences      131
Electrochemical science      329
Electromigration in insulators      60—64 82
Electron beam charging of insulators      92 93
Electron beam damage in surface analysis      87 93—96
Electron beam damage reduction      86
Electron beam effects in AES      39—87
Electron beam effects in AES, coated surfaces      69—71
Electron beam effects in AES, contaminated surfaces      69 72
Electron beam effects in AES, decomposition      69 70
Electron beam effects in AES, first order kinetics for damage      86
Electron beam effects in AES, induced changes      71—74
Electron beam effects in AES, of glasses      74—82
Electron beam effects in AES, oxidized surfaces      69
Electron beam effects in AES, physical effects      65—68
Electron beam effects in AES, polymers, AES      74
Electron beam, enhanced sputtering      83
Electron beam, induced changes      71
Electron beam, induced decomposition      67
Electron beam, induced heating      64—65
Electron beam, interactions      41 53 88—92
Electron emission      108
Electron energy loss spectroscopy      39 140 150 154 221
Electron flood gun      7
Electron induced ion desorption      see “ESD”
Electron microscopy, beam damage      87
Electron probe microanalysis      39
Electron stimulated adsorption      see “ESA”
Electron stimulated desorption      see “ESD”
Electronic interactions      111
Electronic thermalization      22
Electronic-excitation processes      41 49 55
Elemental analysis      356
Energy scale calibration in XPS      13
Erbiumsilicide      221
Erosion rate      see “Sputter depth profiling (SPD) erosion
ESA      45—49
ESA in oxidation of layers and films      53 54
ESA of $\textrm{CH}_4$ , $\textrm{C}_2 \textrm{H}_4$ amd CO on Si (111)      48
ESA of CdS (0001) with $\textrm{H}_2 \textrm{O}$       45
ESA of semiconductor surfaces      47
ESA, mechanisms for      45
ESD      25 41—45 70 87 88
ESD of alkali halides and alkaline earths      49
ESD of carbon      73
ESD of chlorine in $\textrm{SiO}_2$       82
ESD of glasses      49—51 73
ESD of surface layers      49—53 73
ESD of thin films      49—53
ESD, fundamentals of      87 88
ESD, ion angular distributions      45
ESD, oxygen ion desorption      49
ESD, silicon ion desorption      77
ESD, sodium ion desorption      78 79
ESDIAD      45
Extended X-ray absorption fine structure (EXAFS)      141
F-center formation      25—27
Fast atom bombardment (FAB)      359
Fermi level referenced XPS      16
First order kinetics and electron beam damage      86
Flood gun for charge neutralization      2 20 34
Fluence (ion)      103
Fluence (ion), distinction from ion dose      104
Fluence (ion), magnitudes      104 105
Fluorine compounds      19
Fluropolymers      203 205
Gallium arsenide      47 84 106 129 135 150 153 155—157 164 168 189 192 198 213 309 387 405
Gallium phosphide      198
Germanium      150 153 168
Gibbsian segregation      132 206
Glasses, damage      93 94
Glasses, electron beam effects      41 74—80
Glasses, float      71 72
Glasses, mobile ions      74 219
Glasses, phosphosilicate      51 179 218
Glasses, soda-silicate      76 179 218
Glasses, sodium      60 219
Glasses, susceptible to damage      85 218—221
Glasses, titanium doped      220
Glow discharge optical emission spectroscopy (GDOES)      359 361
Glow dischrage mass spectrometry (GDMS)      359 361
Gold, binding energy in      14
Gold, defect production      156
Gold, nanotopography      144 145
Gold, topography development      177 182 195
Gold, XPS spectrum of      4 16 17
Gold-copper alloys      208 226
Gold-palladium alloys      203—205
Grain boundary interdiffusion      398
graphite      117 150 189 205
Heating in AES      40 64 65
Helium(He) implantation      see “Trapping”
Helium(He) ion bombardment      112—114 117 118 132 144—148 150 168 194
Helium(He) trapping      112—114
Hemispherical energy analyzer      3
Hydrocarbon contamination      66—68
Hydrogen ( $\textrm{H}_2$ ), ion bombardment      141 150 162 194 212
Implantation      see “Ion beams trapping
Indium      140—143
Indium antimonide      187
Indium arsenide      198
Indium phosphide      140—143 165 168 182—186 189 192 198 212 232 235—237 405
Information depths in surface analysis      373—376
Inorganic materials, radiation damage      25
Instrumentation      2 358 360 379—381
Insulators, charging      12 16 34 58—60

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