Davies J.H. — The physics of low-dimensional semiconductors : an introduction :: Электронная библиотека попечительского совета мехмата МГУ

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Davies J.H. — The physics of low-dimensional semiconductors : an introduction

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Название: The physics of low-dimensional semiconductors : an introduction

Автор: Davies J.H.

Аннотация:

Low-dimensional systems have revolutionized semiconductor physics and had a tremendous impact on technology. Using simple physical explanations, with reference to examples from actual devices, this book introduces the general principles essential to low-dimensional semiconductors. The author presents a formalism that describes low-dimensional semiconductor systems, studying two key systems in detail: the two-dimensional electron gas, employed in field-effect transistors, and the quantum well, whose optical properties have multiple applications in lasers and other opto-electronic devices. The book will be invaluable to undergraduate and first-year graduate physics or electrical engineering students taking courses in low-dimensional systems or heterostructure device physics.

Язык:

Рубрика: Физика/Физика твёрдого тела/Приложения/

Статус предметного указателя: Готов указатель с номерами страниц

ed2k: ed2k stats

Год издания: 1998

Количество страниц: 438

Добавлена в каталог: 15.08.2005

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Предметный указатель

Schroedinger equation, separable solutions      2
Schroedinger equation, time-dependent      2
Schroedinger equation, time-independent      2
screening      349—356
Screening in 2D      353—356
Screening, dielectric function (2D)      354
Screening, dielectric function (3D)      351
Screening, in, 3D      350—353
Screening, lack of exponential decay in 2D      355
Screening, screening wave vector (2D)      354
Screening, screening wave vector (3D)      351—352
Screening, total, external, and induced charge      350
Secular equation      251
Selection rules      328
Selection rules, $\Delta n = 0$ in quantum wells      391
Selection rules, interband transitions in quantum wells      388—391
Selection rules, intersubband transitions in a quantum well      320
Self-consistent calculation of energy bands      331 346
Self-energy      322 323
Semiconductor equation      36
Shubnikov — de Haas effect      227—228 236
Shubnikov — de Haas effect, fan diagram      227
Shubnikov — de Haas effect, single-particle lifetime      228
Si, crystal structure      58
Si, X-valleys      67
Si-Ge heterostructures      100
Si-Ge heterostructures, application to CMOS      102
Si-Ge heterostructures, strained layer rich in Ge      101—102
Si-Ge heterostructures, strained layer rich in Si      102
Single-particle lifetime      225 296 357
Single-particle lifetime in 2DEG      360
Single-particle lifetime, from Shubnikov — de Haas effect      228
Single-particle lifetime, impurity scattering (2D)      296
Single-particle lifetime, relation to transport lifetime      297 360
Skipping orbit      235
Slater determinant      346
Sommerfeld factor      400
Spherical well      139—140
Spin      23
Spin in magnetic field      223
Spin splitting of Landau levels      223 228
Spin-orbit coupling      65 381—383
Spin-orbit coupling, magnitude of splitting      382
Square barrier, approximate transmission when opaque      157
Square barrier, double      168
Square barrier, T-matrix      155—157
Square barrier, transmission coefficient      156—157
Square well, finite depth      119—125
Square well, finite depth, graphical solution      121
Square well, finite depth, local density of states      124 395
Square well, finite depth, number of bound states      122
Square well, finite depth, very shallow well      122
Square well, infinite depth      4—6 118—119
Square well, infinite depth, 2D and 3D      136
Square well, infinite depth, energies      5
Square well, infinite depth, optical absorption      6—8
Square well, infinite depth, optical absorption energies      8
Square well, infinite depth, wave functions      5
Stark ladder      214
Stark localization      215
Stationary state, current      11
Stationary state, definition      3
Stationary state, expectation values      16
Stimulated and spontaneous emission      303
Stokes equation (Airy equation)      129 415
Strained layers      96—100
Strained layers, band structure      98—100 386
Strained layers, Matthews — Blakeslee criterion for stability      98
Strained layers, metamorphic      98
Strained layers, Si-Ge      100—102
Strained layers, structure      97—98
Structure factor      78
Substrate bias      342
Sum rules      375—377
Sum rules for $1/\bar{\epsilon}_r(\omega)$       376
Sum rules for $\epsilon_1(\omega)$       376 422
Sum rules for $\epsilon_2(\omega)$       376
Sum rules, constraints on lasers      377
Sum rules, f-sum rule      319 375
Sum rules, Franz — Keldysh effect      377
Superlattice      90 91 177—183
Superlattice in heterostructure      197
Superlattice with $\delta$ -function barriers      180
Superlattice, (2D) in magnetic field      238—239
Superlattice, anisotropic effective mass      183
Superlattice, behaviour at top of barriers      181
Superlattice, complex band structure      181
Superlattice, condition for band gaps      179
Superlattice, deduction of Bloch wave vector      178
Superlattice, density of states      182—183
Superlattice, Kronig — Penney model      177
Superlattice, relation to resonant tunnelling      180
Superlattice, states in band gaps      181
Superlattice, T-matrix      178
Surface Brillouin zone      198
Surface states      69 331 336
Surface-roughness scattering      81
T-matrix for $\delta$ -function barrier      158
T-matrix for arbitrary barrier      161
T-matrix for bound states      201
T-matrix for potential step      154
T-matrix for resonant tunnelling      169
T-matrix for square barrier      155—157
T-matrix with different plateaus      161
t-matrix, calculation of conductance      185
T-matrix, definition      153
T-matrix, displacement of object      154—155
T-matrix, effect of current conservation      160
T-matrix, effect of time-reversal invariance      159
T-matrix, group property      201
T-matrix, mathematical properties      158—160
T-matrix, relation to r and t      154 160
T-matrix, reverse      160—161
Thermodynamic density of states      351 352
Thomas — Fermi screening      351
Thomas — Fermi screening in metal      352
Thomas — Fermi screening, dielectric function (2D)      354
Thomas — Fermi screening, dielectric function (3D)      351
Thomas — Fermi screening, donor (2D)      354
Thomas — Fermi screening, donor (3D)      351
Thomas — Fermi screening, wave vector (2D)      354 355
Thomas — Fermi screening, wave vector (3D)      351—352
Threshold voltage of modulation-doped layers      335
Tien — Gordon model      325
Tight-Binding Method      275—280
Tight-binding method, 1D crystal      278—280
Tight-binding method, crystal field      277
Tight-binding method, energy band of 1D crystal      280
Tight-binding method, energy levels of two wells      278
Tight-binding method, higher dimensions      280
Tight-binding method, non-orthogonality      277
Tight-binding method, splitting of energy levels      278
Tight-binding method, transfer, tunnelling, or overlap integral      277 280
Tight-binding method, two wells      276—278
Time-independent perturbation theory      252—261
Time-independent perturbation theory, $k \cdot p$ theory      261—263
Time-independent perturbation theory, condition for convergence      256
Time-independent perturbation theory, influence of symmetry      256
Time-independent perturbation theory, negative second-order change to energy      257
Time-independent perturbation theory, quantum well in electric field      257—260
Time-independent perturbation theory, wave function and energy      256
Time-reversal invariance      158 159
Time-reversal invariance, conditions on T-matrix      159
Time-reversal invariance, effect of magnetic field      220
Transfer, intervalley at heterojunction      197—198
Transfer, real-space      135

Transmission amplitude      151
Transmission amplitude for evanescent waves      152
Transmission amplitude for resonant tunnelling      169
Transmission amplitude from reverse side      161
Transmission coefficient      152
Transmission coefficient for resonant tunnelling      169
Transmission coefficient with different plateaus      161
Transmission coefficient, approximation when opaque      157
Transmission coefficient, from reverse side      161
Transmission coefficient, over-the-barrier resonances      157
Transport lifetime      225 296 357 419
Transport lifetime, impurity scattering (2D)      297 298
Transport lifetime, impurity scattering (3D)      324
Transport lifetime, relation to single-particle lifetime      297 360
Triangular well      128—130
Triangular well for 2DEG      342
Triangular well, energies (exact)      130
Triangular well, energies (WKB approximation)      268
Triangular well, length and energy scales      129
Triangular well, lowest energy (variational estimate)      272
Triangular well, symmetric      148 287
Triangular well, wave functions      130
Tsu — Esaki formula 1D      164
Tsu — Esaki formula 3D      166
tunnelling      89
Tunnelling barrier      89
Tunnelling current (1D)      163—165
Tunnelling current (1D) at low temperature      164
Tunnelling current (1D), cancellation of velocity and density      163
Tunnelling current (1D), conductance (low bias)      165
Tunnelling current (1D), conductance at low temperature      165
Tunnelling current (1D), general result      164
Tunnelling current (1D), quantized conductance      165
Tunnelling current (1D), Tsu — Esaki formula      164
Tunnelling current (2D and 3D)      165—167
Tunnelling current (2D and 3D), collimation of transmitted electrons      167
Tunnelling current (2D and 3D), conductance (low bias)      167
Tunnelling current (2D and 3D), dependence on 'longitudinal' energy      166
Tunnelling current (2D and 3D), general result      166
Tunnelling current (2D and 3D), large bias      167
Tunnelling current (2D and 3D), Tsu — Esaki formula      166
Tunnelling, approximate formula for opaque barrier      157
Tunnelling, coherent      150
Tunnelling, distribution of incoming electrons      162
Tunnelling, effect of imperfections      200
Tunnelling, inelastic scattering      200
Tunnelling, intervalley transfer at heterojunction      197
Tunnelling, many leads      188—195
Tunnelling, potential step      152
Tunnelling, power dissipation      199
Tunnelling, resonant      167—177
Tunnelling, square barrier      157
Tunnelling, two leads      184—188
Two-dimensional electron gas      93
Two-dimensional electron gas, alloy scattering      363
Two-dimensional electron gas, band diagram      329—336
Two-dimensional electron gas, density of states as thickness      334
Two-dimensional electron gas, dielectric function      354
Two-dimensional electron gas, effect of doped substrate      341—342
Two-dimensional electron gas, effect of DX centres      337—339
Two-dimensional electron gas, effect of spacer on density      339
Two-dimensional electron gas, electronic structure      342—349
Two-dimensional electron gas, parallel conduction      340
Two-dimensional electron gas, persistent photoconductivity      339
Two-dimensional electron gas, scattering at interfaces      363
Two-dimensional electron gas, scattering by background impurities      362
Two-dimensional electron gas, scattering by LA phonons      363—365
Two-dimensional electron gas, scattering by remote impurities      356—361
Two-dimensional electron gas, screening      353—356
Two-dimensional systems, density of states      133
Two-dimensional systems, energies      132
Two-dimensional systems, general theory      130—133
Two-dimensional systems, subbands (electric)      132
Two-dimensional systems, wave functions      132
Umklapp scattering      308
Uncertainty principle      17 148
UNITS      xvii
Vacuum level      86
Valence band      7
Valence band of common semiconductors      64—66
Valence band, Kane model      377—383
Valence band, Luttinger model      384
Valence band, spin-orbit coupling      65 381
Valence band, warped spheres      66 384
Valley in conduction band      67—68
Variational method      270—273 345
Variational method, accuracy      271
Variational method, bound states in triangular well      272—273
Variational method, general result      270
Variational method, lowest energy level in triangular well      272
Vector potential      207
Vector potential for light wave      311
Vector potential for uniform electric field      207
Vector potential for uniform magnetic field      207
Vector potential, Aharonov — Bohm effect      233
Vector potential, current density      208
Vector potential, Landau gauge      207
Vector potential, symmetric gauge      207
Vectors (notation)      xvii 118 329
Vegard’s Law      82
Velocity in electromagnetic fields      208
Velocity, phase and group      3
Vertical transitions      69 311 392
Virtual transitions      322
Virtual-crystal approximation      80
Voltage probe      188 190
Voltage probe, invasive effect on system      192
Warped spheres (for holes)      66 384
Wave function for many electrons      345
Wave function in momentum space      17
Wave function, boundary conditions      22
Wave function, charge density      9
Wave function, current density      10
Wave function, dimensions      10
Wave function, Hartree approximation      345
Wave function, matching at potential step      151
Wave function, matching in heterostructures      142 196
Wave function, normalization      10
Wave function, stationary state      3 11
Wave function, symmetry      5 119
Wave function, wave packet      16
Wave packet      3 16—19
Wave packet, dispersion      19
Wave packet, evolution in time      18
Wave packet, expectation values of position and momentum      17
Wave packet, Gaussian      16
Wave packet, motion      18
Wave packet, phase and group velocities      3
Wave packet, uncertainty principle      17
Wigner crystal      245 347
Wigner — Seitz cell      57
WKB theory      263—269
WKB theory for transmission coefficient      266
WKB theory, bound states in triangular well      267—268
WKB theory, condition for bound states      267
WKB theory, effect of prefactor      265
WKB theory, energy levels in triangular well      268
WKB theory, general form      265
WKB theory, matching at turning point      266
WKB theory, tunnelling through Schottky barrier      268—269
work function      86
Yukawa potential      352
Zener tunnelling      53 214 286
Zero-dimensional systems      142
Zero-point energy      5 18 148
Zinc-blende lattice      58
Zone folding      47

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