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Ehrenreich H., Spaepen F. — Solid State Physics.Volume 55.
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Название: Solid State Physics.Volume 55.
Авторы: Ehrenreich H., Spaepen F.
Аннотация: The present volume deals with four diverse areas of considerable interest and importance: organic electronic device physics, charge density waves in nanocrystals, shape memory alloys, and grain growth of cellular structures.
First part presents a comprehensive survey of the basic physics underlying organic electronic devices, in particular, the most studied examples of light-emitting diodes (LEDs) and field-effect
transistors. This exciting new area is rapidly unfolding in some ways, as the authors point out, analogously to the early development of inorganic semiconductor devices.
The second part describes the formation of charge density waves (CDWs) in 2D nanostructures, in particular, transition metal dichalcogenides (TMDs).
The third part is devoted to the vibrational propertles of shape-memory alloys. The shape-memory effect in certain metallic alloys is made possible by a reversible martensitic transformation. Shape-memory alloys have several technological applications, from safety valves to, most recently, micro-electromechanical systems (MEMS).
The last part reviews our understanding of the evolution of materials that are divided up into cells by internal surfaces, such as polycrystals or foams. The evolution is a type of coarsening, driven by a
continuous decrease in the total interfacial area. In polycrystals the phenomenon is known as grain growth.
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Рубрика: Физика /
Статус предметного указателя: Готов указатель с номерами страниц
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Год издания: 2001
Количество страниц: 349
Добавлена в каталог: 22.02.2015
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Предметный указатель
Stafstrom, S. 23(121)
Stassis, C. 181(86) 193(110) 194 199(125) 200 200(128) 201(132) 202 204 207 208 232(190) 267
Stavans, J. 278 278(17) 279 286 286(33 35) 287 290 290(61) 294
Stegeman, G.I. 20(106)
Steinfort, A.J. 121(9)
Stelzer, F. 7(46)
Stine, K.J. 293(63) 294
STMs see "Scanning tunneling microscopes"
Stobbs, W.M. 205 205(142) 206
Stocking, A. 3(10)
Stoscio, J.A. 142(48)
Strain-phonon coupling model, martensitic transition in shape-memory alloys 235—245 262
Stroscio, J.A. 125(29)
Strukelj, M. 98(200)
Strunk, C. 121(5)
Stuhr, U. 256 256(242) 258
Stumpf, R. 123(20)
Stuwe, H.P. 305(93)
Su, W.P. 2(1) 18(78) 19(99)
Su, X. 260(251) 264(254)
Succinonitrile, polycrystalline, grain growth 295—296
Suezava, M. 200(129)
Suezawa, M. 193(105)
Sumino, K. 193(105)
Sun, R.G. 7(47)
Sundheimer, M.L. 20(106)
Superconductivity, in confined mesoscopic system 121—122
Suzuki, S. 264(256)
Suzuki, T. 209(144) 212(152) 231(189)
Svenson, E.C. 205(139)
Swager, M. 105(206)
Swager, T.M. 105(207)
Swenberg, C.E. 2(3)
Switching events, two-dimensional cellular structures 276—277
Switching intensity parameter 284
Sze, S.M. 11(74)
Tadic, B. 174(56)
Tajbakhsh, A.R. 56(164)
Tak, Y.H. 78(188) 105(209—210)
Takagi, T. 264(256)
Takagi, Y. 212(153)
Takeda, S. 178(73)
Taliani, C. 3(13)
Tanahashi, H. 209 209(144)
Tang, C.W. 2(7) 4(33—34) 9(60—61) 84(196) 98(199)
Tang, H. 125(31)
Tani, J. 264(256)
Tanner, L.E. 175(59) 176 176(61) 178 178(69) 179(76) 180(84) 202 204 251(228) 256(240) 256(241) 257 258
Tas, H. 163(15) 164(18)
Tasch, S. 115(219 224—225)
Tecklenburg, R. 77(187)
Tertiary recrystallization 295
Tessler, N. 4(22—23) 105(208) 115(214—217)
Thermodynamics, martensitic transition in shape-memory alloys 172—174 217—221
Thin films, polycrystalline, grain growth 293—304
Third-order elastic constant (TOEC) 183—184
Thomas, D.S. 115(217)
Thompson, C.V. 281(23—24) 288(40—41 43—44) 289(58) 296(78—80) 297(81—83) 302(85) 303(86 88—89) 305(94)
Thompson, Carl V. 269
Thompson, M.E. 2(6) 3(12 17 19—21 53) 55(154) 115(227)
Thomson, M.E. 123(17)
Thomson, R.E. 123(17)
Thurston, R.N. 215(157)
Ti-Ni alloy, martensitic transition 167 190
Tighe, T.S. 121(6)
Time-of-flight, mobility measurements of organic electronic materials 57—62
Tinkham, M. 121(6 8) 124(22)
Tkachenko, A.V. 205(141)
TOEC see "Third-order elastic constant"
Toledano, J.C. 234(199)
Toledano, P. 234(199)
Torgeson, D.R. 223(174)
Torok, E. 193(106)
Torra, V. 172(40) 219(168)
Torruellas, W.E. 20(106)
Torsi, L. 10(68) 77(185)
Touminen, M.T. 121(6)
Town, S.L. 254(235)
Toyozawa, Y. 142(51)
Trampenau, J. 179(81) 200(126—127) 200(128)
Transition metal-dichalcogenide (TMD), charge density waves in bulk TMDs 126—132
Transition metal-dichalcogenide (TMD), compounds 123
Transition metal-dichalcogenide (TMD), crystal structure 128—129
Tris-(8-hydroxyquinolate)-aluminum see "Alq"
Trivisonno, J. 188 192 196(115) 258(248)
Trullinger, S.E. 242(205)
Tucker, J.R. 123(18) 124(25) 142(52)
Turnbull, D. 270 271 271(1) 272 313
Tweed patterns, as martensitic transition precursor effect 178—179
Udler, D. 296(75)
Ueda, A. 5(39)
Ueta, M. 142(51)
Ullako, K. 256(239)
Underwood, E.E. 313(110)
Vacar, D. 38(138)
Valencia, V.S. 60(169)
Valles, J.M.Jr. 155(68)
van der Zant, H.S.J. 121(9) 157(75)
Van Haesendonck, C. 121(5)
van Houten, H. 120(3)
van Hulle, D. 219(168)
van Humbeeck, J. 219(168) 231(188)
Van Look, L. 121(5)
Van Munster, M.G. 55(158)
Van Slyke, S.A. 4(33—34)
Vannikov, A.V. 68(178)
Vardeny, Z.V. 19(89—90) 24(122) 57(167) 115(220—221)
Varma, C.M. 177 177(63)
Vasil'ev, A.N. 264(256)
Verlinden, B. 189 189(101—102) 190 212(152) 215 215(158) 249 250
Verschuere, M. 121(5)
Vertex models, grain growth in polycrystalline materials 288
Vettier, C. 205(139)
Vibrational anharmonicity, shape-memory alloys 187—188 210—216
Vignes—Adler, M. 312(107) 313(112—113)
Vives, E. 173(49) 174(50 54—55) 188(100) 192 195 227(183) 237(204) 238 239 263(253) 267 240
Vleggaar, J.M. 55(157)
Vogl, G. 179(81) 200(126)
Vogl, P. 22(114)
von Molnr, S. 125(34)
von Neumann, J. 277 277(14) 278
Vorderwisch, P. 256(242) 258
Voss, B. M. W. Langeveld 4(24)
Vossmeyer, T. 143(53)
Wada, Y. 156(72)
Wadley, H.N.G. 173(45)
Wagner, C.Z. 280 280(21)
Wahlstrom, E. 156(74)
Wakai, F. 312(108)
Walk up, R.E. 124(25) 142(50) 142(52)
Wall, M. 256(240) 257 258
Wallace, D.C. 160(2 4) 182 183(89)
Walser, A.D. 7(42)
Walter, J.L. 295 295(71) 302(84)
Walter, U. 123(17)
Walton, D.T. 288(43—44) 303(86) 305(94)
Wang, C. 124(25) 142(52)
Wang, D.K. 7(47)
Wang, H.L. 38(138)
Wang, Y.Z. 7(47) 105(206—207)
Warlimont, H. 164(18 20)
Warman, J.M. 7(44)
Wasserman, E.F. 217(162) 252(229—230)
Waszczak, J.V. 155(68—69)
Wayman, C.M. 163(13 16) 167 171(32) 177(64—65) 178(72)
Weaire, D. 276 276(11) 289 289(52—53) 290(62) 293(67) 308 308(100—101)
Weaver, M.S. 55(156)
Webster, P.J. 253(231) 254(235)
Wehrmeister, T. 84(196)
Wei, S. 19(89)
Wei, X. 24(122)
Weis, X. 57(167)
Weiss, D.S. 2(4)
Weitering, H.H. 123(20)
Weitz, D.A. 313(111)
Weller, H. 143(53)
Weller, R.A. 5(40)
Wenzl, F.P. 115(224—225)
Westengen, H. 289(54)
Westervelt, R.M. 293(65—66)
Whang, J. 288(40)
Whitman, L.J. 125(29)
Wickmann, L.K. 179(79)
Wieting, T.J. 155(70)
Wigner — Seitz cell 307
Williams, R. 31(132)
Willis, J.M. 160(4)
Wilson, J.A. 123 123(15)
Winkler, B. 115(224—225)
Winokur, M.J. 5(38) 6
Wise, J.A. 293(63)
Wisesendanger, R. 131(43)
Withers, R.L. 123(15)
Wochner, P. 256(240—241) 257 258
Wolf, U. 78(189—191)
Woo, E.P. 54(151—152)
Woo, H.S. 19(104)
Worgull, J. 258(248)
Wu, C.I. 44(143)
Wu, D.T. 245(212)
Wu, K.H. 260(251) 264(254)
Wu, M.W. 78(192)
Wu, X.L. 123(19) 130(41) 153(66)
Wuttig, M. 175(59) 251(228) 253(233)
Wyder, P. 121(7)
X-ray diffraction, as martensitic transition precursor effect 177—178
Yahioglu, G. 4(22) 115(217)
Yamada, Y. 177(66) 178(67—68) 180(85) 185(93) 193(111) 244(210) 245(211)
Yamaguchi, W. 148(61)
Yang, B.X. 176 176(61) 178 180(84) 202 204
Yang, C.Y. 55(162)
Yang, F. 264(254)
Yang, Y. 115(222 226)
Yaron, D. 19(95—98) 20(112)
Yassar, A. 10(69 71)
Yassievich, I.N. 79(194)
Yasunaga, M. 197(118)
Ye, L. 205(140)
Ye, Y.Y. 205(137) 210(146) 235 244(206)
Yosada, K. 178(75)
Yoshida, A. 210(150)
Yoshikawa, M. 171 221(169)
Yoshino, K. 19(90) 115(220—221)
You, Y. 3(19)
Yu, G. 9(62) 26(129) 115(222—223)
Yu, Z. 173(46)
Yu, Z. G. 15(76) 18(80—81)
Yu, Zhi Gang 117
Zahres, H. 252(230)
Zangwill, A. 217(160)
Zarestky, J. 193(110) 194 199(125) 200 201(132) 202 204 207 208 232(190)
Zawodzinski, T.A. 49(146)
Zawodzinski, Thomas 117
Zener, C. 160 160(7) 190(104) 217 305 305(95)
Zenz, G 115(219)
Zettl, A. 123(17)
Zhang, C. 115(222)
Zhang, J. 124(23) 148(60)
Zhang, Jian 119
Zhang, P. 264(254)
Zhao, G.L. 177(62)
Zheludev, A. 256 256(240—241) 257 258 259(249)
Zheng, Q.B. 7(47)
Zhou, L. 188 192 196(115)
Zhou, P. 123(19)
Ziebeck, K.R.A. 253(231) 254(235) 265(259)
Ziolo, J. 223(174)
Zoebisch, E.G. 15(77)
Zolliker, M. 201(131)
Zrubov, N. 171(35)
Zuo, F. 260(251) 264(254)
Zuppiroli, L. 49(149)
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