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Ehrenreich H., Spaepen F. — Solid State Physics.Volume 55.
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Íàçâàíèå: Solid State Physics.Volume 55.
Àâòîðû: Ehrenreich H., Spaepen F.
Àííîòàöèÿ: The present volume deals with four diverse areas of considerable interest and importance: organic electronic device physics, charge density waves in nanocrystals, shape memory alloys, and grain growth of cellular structures.
First part presents a comprehensive survey of the basic physics underlying organic electronic devices, in particular, the most studied examples of light-emitting diodes (LEDs) and field-effect
transistors. This exciting new area is rapidly unfolding in some ways, as the authors point out, analogously to the early development of inorganic semiconductor devices.
The second part describes the formation of charge density waves (CDWs) in 2D nanostructures, in particular, transition metal dichalcogenides (TMDs).
The third part is devoted to the vibrational propertles of shape-memory alloys. The shape-memory effect in certain metallic alloys is made possible by a reversible martensitic transformation. Shape-memory alloys have several technological applications, from safety valves to, most recently, micro-electromechanical systems (MEMS).
The last part reviews our understanding of the evolution of materials that are divided up into cells by internal surfaces, such as polycrystals or foams. The evolution is a type of coarsening, driven by a
continuous decrease in the total interfacial area. In polycrystals the phenomenon is known as grain growth.
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Ïðåäìåòíûé óêàçàòåëü
Organic electronic materials, metal/organic interface electronic structure 24—54
Organic electronic materials, solid state properties 21—24
Organic field-effect transistors (FETs) 2—4
Organic field-effect transistors (FETs), device model 108—113
Organic field-effect transistors (FETs), device structure 9—10
Organic field-effect transistors (FETs), electronic transport properties 55—56
Organic light-emitting diodes (LEDs) 2—3
Organic light-emitting diodes (LEDs), bipolar devices 93—98
Organic light-emitting diodes (LEDs), device model 79—84
Organic light-emitting diodes (LEDs), device structure 8—9
Organic light-emitting diodes (LEDs), electronic transport properties 55—56
Organic light-emitting diodes (LEDs), high current density operation 105—108
Organic light-emitting diodes (LEDs), multilayer devices 98—105
Organic light-emitting diodes (LEDs), Schottky energy barriers 24 31 32—45
Organic light-emitting diodes (LEDs), single-carrier devices 84—93
Organic light-emitting diodes (LEDs), transient response 105—108
Ortin, J. 171 172(38—39) 173(49) 174(50 55) 188 193(109) 218(164) 219(168) 221(169 172) 222 229 267
Oshima, R. 178(73—74)
Otsuka, K. 171 171(32) 197 197(117—118) 201(133) 202 203(135) 209(144) 233(195) 236 253(232)
Pai, D.M. 66(172)
Pak, H.R. 218(163)
Pakbaz, K. 5(40)
Palmer, J.E. 296(80)
Palmer, M.A. 296(73—74 76—77)
Pande, C.S. 283 283(28)
Pankratov, O. 150(65)
Pannetier, B. 157(75)
Papadimitrakopoulos, F. 98(200)
Park, C. 148(61)
Park, H. 124(26)
Park, J. 124(26)
Park, Y. 84(196)
Parker, I.D. 24(124) 32(133) 102(203)
Parris, P.E. 68(177—181)
Partee, J. 57(167)
Parthasarathy, G. 9(54—55) 115(218)
Pasch, G. 77(187)
Pascual, R. 173(43)
Pati, S.K. 19(99)
Peak, M.S. 254(235)
Pei, Q.B. 115(212 222 226)
Peierls, R.E. 122 122(12)
Pelegrina, J.L. 191 197(119 121) 198 219 219(167) 226
Pentacene 4 5
Pentacene, carrier mobility measurements 61 63
Pentacene, exciton binding energy 45—46
Pentacene, hole mobility 77
Pentacene, Schottky energy barrier 41—43
Penzkofer, A. 8(51)
Pepperhoff, W. 252(230)
Perel, V.I. 79(194)
Perenboom, J.A.A.J. 121(7)
Perez-Magrane, R. 173(49)
Perkovic, O. 174(52)
Persson, B.N.I. 142(47 49)
Petritsch, K. 9(64)
Petti, E. 258(248)
Pettifor, D. 164(21)
Petty, W. 179(81) 180(83) 181(87) 200 200(126—128)
Peyghambarian, N. 3(16) 98(202)
PFO (poly(9, 9-dioctylfluorene)), carrier mobility 72—73
Philips, W.A. 224(179)
Phillips, R.T. 7(45)
Phonon dispersion, shape-memory alloys 199—210 256
Pichler, K. 9(63)
Pichlmaier, M. 8(51)
Pine, D.J. 313(111)
Pinner, D.J. 105(208) 115(217)
Pinto, M.R. 10(73)
Pittet, N. 312(107)
Planes, A. 165 168(31) 171 172(38—39) 173(41—42 47—49) 174(50 54—55) 188 188(100) 191 192 193(109—110) 194 195 197(121) 198 207 212(155) 214 218(164) 219(165) 220 221(169 172) 222 229 231(185 187) 232(190—191) 237(204) 238 239 240 257(246) 258(247) 259 260(250 252)
Planes, Antoni 159
Plummer, E.W. 123(20)
Poly(9, 9-dioctylfluorene) see "PFO"
Polycrystalline materials, films 293—304
Polycrystalline materials, foils 293—296
Polycrystalline materials, grain growth 270 313—314
Polycrystalline materials, grain growth, alloy additions 304—305
Polycrystalline materials, grain growth, Burke — Turnbull model 270—271
Polycrystalline materials, grain growth, films 293—304
Polycrystalline materials, grain growth, foils 293—296
Polycrystalline materials, grain growth, mean field models 279—286 306
Polycrystalline materials, grain growth, simulations 286—290
Polycrystalline materials, grain growth, three-dimensional systems 305—313
Polycrystalline materials, grain growth, two-dimensional systems 271—279 290—293
Poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-1, 4-phenylene vinylene] see "MEH-PPV"
Pommerehne, J. 105(209)
Pons, J. 254(237) 255 256(243)
Pope, M. 2(3)
Popovis, I.G. 143(53)
Porta, M. 224(178) 267
Pourmirzaie, F. 3(11)
PPV (poly(p-phenylene vinylene) 4—6 16—18
Prause, B. 313(115)
Prause, P. 313 313(114)
Predel, B. 167(24)
Priestley, R. 7(42)
Primary recrystallization 295
Probst, M. 47(145)
Purushothaman, S. 4(32)
Putnis, A. 178(71)
Pynn, R. 199(124) 200(130) 202 203(134) 209(145) 221(173) 224
Qiu, X. 121(5)
Quattrocchi, C. 7(44) 19(104)
Rafols, I. 173(49)
Rajagopal, A. 41(140) 44(143)
Rajan, K. 296(73—74 76—77)
Raju, V.R. 4(27 31)
Ralph, D.C. 121(8) 124(22)
Ramasesha, S. 18(82) 19(99) 20(107 109)
Rapacioli, R. 173(43) 232(191) 233(193)
Rauch, P. 123(17)
Raueso, S.A. 293(63)
Raymond, S. 203(135)
Recrystallization 270 293 295
Redecker, M. 54(151—152)
Reed, M. 120(1)
Remmers, M. 7(44)
Ren, X. 197 197(117) 233(195) 236
Resel, R. 57(165—166)
Rhuele, M. 178(70)
Rice, M.J. 19(93 100—101)
Rice, T.M. 123(14)
Richter, D. 223(176)
Riege, S.P. 297(83)
Rifkin, J.A. 179(80)
Rios-Jara, D. 174(57) 188 193(109) 197(120) 203(134) 209(145) 229 267
Rivier, N. 275 275(6) 278 278(16) 307(98)
Roberts, B. W. 174(51)
Robertson, I.M. 178(72)
Robinson, J. 256(239)
Robinson, R.A. 199(124) 202
Robinson, R.B. 155(68—69)
Rodriguez, P.L. 197 197(119)
Rogers, J. 4(27)
Rogers, J.A. 10(72)
Rohlfing, M. 22(116)
Roitburd, A.L. 160(5)
Roitman, D. 3(10)
Roitman, D.B. 3(11)
Romero, R. 165 219 219(165 167) 224(180) 226 231(187) 232(190)
Rosen, M. 173(44)
Rost, H. 9(65) 40(139)
Roth, R. 123(21)
Rothberg, L.J. 2(5) 9(57) 10(68) 49(148) 98(200)
Rotzinger, F. 49(149)
Rouby, D. 173(47—48)
Rouxel, J. 123(13)
Rowe, J. 29(131)
Rubin, S. 49(146)
Rubini, S. 167 223(174)
Rubio, A. 145(57)
Ruoff, R.S. 157(77)
Ryum, N. 283 283(27) 289(54 59—60) 291
Saburi, T. 163(16) 167(24)
Sade, M. 197(119)
Saetre, T.O. 289(59—60) 291
Safran, S.A. 303(87)
Sahni, P.S. 286(36—37)
Sakamoto, H. 171 171(32)
Salamon, M.B. 177(64—65)
Salanceck, W.R. 23(118)
Salaneck, W.R. 23(120—121) 40(139)
Salem, J.R. 24(123) 55(153)
Salje, E. 178(71)
SAM see "Self-assembled monolayer"
Sampietro, M. 115(224)
Samuel, I.D.W. 7(45) 80(195)
Sanati, M. 235(202)
Sano, T. 47(144)
Sariciftci, N.S. 38(137)
Sarpeshkar, R. 4(31) 115(229)
Saunders, G.A. 184 184(90) 185(94) 210(149) 211 216 216(159) 267
Saxena, A. 15(76) 18(80—81) 19(87) 26(130) 235(202) 244(207)
Saxena, Avadh 117
Scanning probe microscopes, nanostructure creation 125—126 132—142
Scanning tunneling microscopes (STMs), nanostructure creation 125
Schafer, H. 131(42)
Scheinert, S. 77(187)
Schenk, R. 19(104)
Scherf, U. 67(175) 115(219 224)
Schimetta, M. 7(46)
Schlittler, R.R. 125(31)
Schlom, D.G. 5(37)
Schluter, M. 155(70)
Schmahl, W.W. 178(71)
Schmidt, A. 44(142)
Schober, H.R. 179(81) 181(87) 200(126—127)
Schoenfeld, B. 201(131)
Scholte, P.M.L.O. 121(9)
Scholz, G.A. 156(73)
Schon, H.J. 57(168)
Schon, J.H. 22(117)
Schottky energy barrier at metal/organic interface 24 31 32—45
Schottky energy barrier, Alq 43—45
Schottky energy barrier, manipulating using dipole layers 49—54
Schottky energy barrier, MEH-PPV 32—41
Schottky energy barrier, pentacene 41—43
Schottky energy barrier, self-assembled monolayer (SAM) and 49—54
Schrieffer, J.R. 2(1)
Schryvers, D. 176 176(61) 178 202 204
Schwartz, A. 256(240) 257 258
Schwartz, B.J. 115(212—213)
Schweizer, E.K. 125(28)
Scott, C. 55(153)
Scott, J.C. 9(58) 24(123) 55(160)
Second-order elastic constant (SOEC) 182
Second-order elastic constant (SOEC), martensitic transition of shape-memory alloys 187—199
Seel, Steve 314
Segel, D. 286 286(35)
Segui, C. 219(168) 254(237) 255 256(243)
Seidler, P.F. 36(134)
Self-assembled monolayer (SAM), Schottky barrier and 49—54
Semenovskaya, S. 246(216)
Seshadri, R. 293(66)
Sethna, J. P. 174 174(51—53) 179(77—79)
Shaheen, S.E. 3(16) 98(202)
Shape-memory alloys 160 265—267
Shape-memory alloys, ferromagnetic 161 252—265
Shape-memory alloys, lattice dynamics 181 266
Shape-memory alloys, lattice dynamics, elastic behavior 181—186
Shape-memory alloys, lattice dynamics, Grueneisen parameters 186—187
Shape-memory alloys, martensitic transition 160 162—164 266—267
Shape-memory alloys, martensitic transition, experimental results 187—216
Shape-memory alloys, martensitic transition, Grueneisen parameters 186—187 210—216
Shape-memory alloys, martensitic transition, kinetics 172—174
Shape-memory alloys, martensitic transition, magnetic coupling 252—265
Shape-memory alloys, martensitic transition, modeling 233—252 262—264
Shape-memory alloys, martensitic transition, phase diagram 164—171
Shape-memory alloys, martensitic transition, phase stability 217—233
Shape-memory alloys, martensitic transition, phonon dispersion 199—210 256
Shape-memory alloys, martensitic transition, precursor effects 175—180 256
Shape-memory alloys, martensitic transition, second-order elastic constants 187—199
Shape-memory alloys, martensitic transition, thermodynamics 172—174 217—221
Shape-memory alloys, martensitic transition, third-order elastic constants 210—216
Shape-memory alloys, martensitic transition, vibrational anharmonicity 186—187 210—216
Shapiro, S.M. 176 176(61) 177(64 66) 178 179 179(76) 180(84) 201(133) 202 203(135) 204 205(139—140) 246(216) 256(240—241) 257 258 259(249)
Shavrov, V.G. 264(256)
Shaw, J.M. 4(32)
Shaw, T.M. 125(34)
Sheats, J. 3(11)
Sheats, J.R. 3(10)
Sheehan, P.E. 125(36)
Shen, T.-C. 142(52)
Shen, T.C. 124(25)
Shen, Z. 2(6) 3(12) 55(154)
Shen, Z.L. 115(227)
Shi, J. 2(7)
Shibata, K. 47(144)
Shiino, O. 148(61)
Shimada, M. 5(39)
Shimitzu, K. 171 171(32)
Shimoi, Y. 18(83—85) 20(110)
Shinar, J. 9(61) 57(167)
Shirane, G. 180(84) 193(111) 200(129)
Shirota, Y. 98(201)
Shkunov, M. 115(220)
Shore, J.D. 174(51)
Shoustikov, A. 3(19)
Shuai, Z. 9(67) 18(78) 19(96 99 105
Shvindlerman, L.S. 285(30) 295(72)
SiAhmed, L. 49(149)
Sibley, S. 3(19) 3(21)
Silbey, R. 20(112)
Silinsh, E.A. 25(127)
Simmons, J.A. 173(45)
Simon, A.J. 293(64)
Simulations, grain growth in polycrystalline materials 286—290 309—312
Sinclair, M.B. 60(169)
Singh, K.K. 178(71)
Singh, R.C. 165
Singh, V.V. 304(91)
Single-carrier organic light-emitting diodes (LEDs) 84—93
Single-carrier SCL diodes, carrier mobility 63—66
Singleton, M.F. 167
Sirringhaus, H. 4(23—24)
Skala, S. 123(18)
Skriver, H.L. 217(161)
Slough, C.C. 123(16)
Slusher, R.E. 9(57)
Slyozov, V.V. 280 280(20)
Smith, C.S. 275 275(10) 305(95)
Smith, D.L. 1 8(52) 15(76) 19(87—88) 21(113) 26(128—130) 32(133) 38(136) 43(141) 49(146—147) 54(150) 55(163) 63(170) 65(171) 77(184) 88(198) 102(204) 106(211)
Smith, H.I. 296(80) 297(82)
Smits, A.B. 121(9)
Snow, E.S. 125(35)
Soap froth, evolution 289 290—292
SOEC see "Second-order elastic constant"
Sokolowski, M. 8(49)
Somoza, A. 232(190)
Sonoda, Y. 23(120)
Soos, Z.G. 18(82) 20(107—109)
Sotgui, R. 115(224)
Spaepen, Frans 314
Spencer, G.C.W. 6(41)
Sperry, P.R. 293(68)
Spiering, A.J.H. 4(24)
Squires, G.L. 199(124) 202
Srolovitz, D.J. 286(36—37) 303(87) 306(97) 308(102)
Stach, E.A. 303(90)
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