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Campbell S.A. Ч The Science and Engineering of Microelectronic Fabrication
Campbell S.A. Ч The Science and Engineering of Microelectronic Fabrication

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Ќазвание: The Science and Engineering of Microelectronic Fabrication

јвтор: Campbell S.A.

јннотаци€:

An introduction to microelectronic fabrication Ч Semiconductor substrates Ч Diffusion Ч Thermal oxidation Ч Ion implantation Ч Rapid thermal processing Ч Optical lithography Ч Photoresists Ч Nonoptical lithographic techniques Ч Vacuum science and plasmas Ч Etching Ч Physical deposition: evaporation and sputtering Ч Chemical vapor deposition Ч Epitaxial growth Ч Device isolation, contacts, and metallization Ч CMOS technologies Ч GaAs technologies Ч Silicon bipolar technologies Ч MEMS Ч Integrated circuit manufacturing Ч Appendix 1. Acronyms and common symbols Ч Appendix 2. Properties of selected semiconductor materials Ч Appendix 3. Physical constants Ч Appendix 4. Conversion factors Ч Appendix 5. Some properties of the error function Ч Appendix 6. F values Ч Appendix 7. SUPREM commands


язык: en

–убрика: ‘изика/

—татус предметного указател€: √отов указатель с номерами страниц

ed2k: ed2k stats

»здание: 2. A.

√од издани€: 2001

 оличество страниц: 616

ƒобавлена в каталог: 20.01.2014

ќперации: ѕоложить на полку | —копировать ссылку дл€ форума | —копировать ID
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ѕредметный указатель
$XeF_{2}$ vapor etching      527
2-D growth      363
Accelerometer, MEMS      544
Acoustic waves      136
Actinic absorbance      195
Actuators, MEMS      546Ч551
Adatoms      387
Adiabatic heating      127Ч128
Advanced silicon vapor phase, epitaxial growth techniques      378Ч381
Aerogel      430
Agglomeration      18
Air bridges      479
Aligners, optical      153Ч154 165Ч172
Alloyed contacts      421Ч423
Alloys      304Ч305 317
Aluminum      317Ч318 419Ч421
Ambient, particle detection and      496
Analog bipolar technologies      507Ч508
Analysis of variance (Anova)      569Ч571
Anisotropic etching      269Ч272
Anisotropy      258Ч259
Annealing processes      138Ч140
Anode dark space      250
Anodic bonding      537
Antipov emitter      501
Antireflective coatings      177Ч178
Antisite defect      413
APCVD      337Ч339
Aqua regia      417
Arc lamps      131 159Ч160
Area defect      19
Areal image      153
Aromatic ring      184
Arrenhius function      16
Aspect ratio      301
Atomic flux divergence      426Ч427
Autodoping      365Ч366
Avalanche      490
Backstreaming      244
Bamboo effect      426
Bandgap narrowing      494
Barrier height      415Ч416
Barrier metals      318 349 421
BCF theory      387Ч389
Bias sputtering      315Ч316
BiCMOS      504Ч507
Bipolar junction transistors (BJT)      488Ч489
Bleaching      195
Blowers      242Ч244
Boats      90
Boron penetration      455
Borophosphosilicate glass (BPSG)      343
Boule      21 23 24 31
Boundary layers      333Ч336
Breakdown histogram      79
Bridging oxygen      76
Bridgman growth      27
Bridgman growth, horizontal      29
Bridgman growth, vertical      29Ч30
Buffered FET logic      474
Buoyancy driven recirculation cells      27
Buried channels      454
Buried collector      494Ч495
Buried dielectrics      118Ч120
C-V profiling      55
CAIBE      276Ч277
Cantilever beam deflection      524
Cantilever beam processing      539 544Ч545
Capacitive pressure sensor      519
Capping layer      139
Carboxylic acid      186
Chain scission      185
Channel implants      445
channeling      110Ч112
Charge to breakdown test      79Ч80
Charge transfer compounds      199
Charged vacancy      43
Chemical beam epitaxy      391Ч392
Chemical equilibrium      328Ч330
Chemical mechanical polishing      264Ч266
Chemical vapor deposition (CVD) materials, borophosphosilicate glass      343
Chemical vapor deposition (CVD) materials, copper      349Ч350
Chemical vapor deposition (CVD) materials, metals      347Ч350
Chemical vapor deposition (CVD) materials, phosphosilicate glass      327
Chemical vapor deposition (CVD) materials, polysilicon      341Ч342
Chemical vapor deposition (CVD) materials, tungsten      347Ч349
Chemical vapor deposition (CVD) systems, atmospheric      337Ч339
Chemical vapor deposition (CVD) systems, cold wall      341Ч342
Chemical vapor deposition (CVD) systems, high-density plasma      345
Chemical vapor deposition (CVD) systems, hot wall      336 339Ч341
Chemical vapor deposition (CVD) systems, low-pressure CVD      339Ч343
Chemical vapor deposition (CVD) systems, plasma enhanced      343Ч347
Chemical vapor deposition (CVD) systems, vertical chamber      340Ч341
Chemically amplified resists (CARs)      197
Chlorine plasmas      277Ч281
Chlorosilanes      341Ч343
Chromium doping      412
cleaning      356Ч359
Climb      18
Clustering factor      563
Collimated sputtering      314Ч315
Comer compensation      529
Complementary metal-oxide-semiconductor (CMOS), design      442
Complementary metal-oxide-semiconductor (CMOS), technologies      442Ч447
Compton effect      206Ч207
Computer-integrated manufacturing (CIM)      575Ч577
Concentration dependence diffusivities      42
Condensation nuclear counters (CNCs)      567
Conductance      239
Confounded variables      572
Contact aligners      165Ч166
Contacts, ohmic, alloyed      421Ч423 455
Contacts, ohmic, implanted      418Ч421
Contacts, resistance (FET)      450
Contacts, Schottky      414Ч418
Contrast enhancement layers (CELs)      198
Contrast, optical      187Ч189
control charts      see "Statistical process control"
Convection      127
Convection, natural      26 334Ч335
Coplanar waveguides      424Ч425 479Ч480
copper      432
Core doping      31
Coulomb scattering      104Ч105
Critical angle      110
Critical layers      564
Critical modulation transfer function (CMTF)      190Ч191
Crooke's dark space      250
Cross linking      185 227
Crucible-heating techniques      302Ч304
Cryopump      246
Crystal rate monitor      300
Crystals, defects in      15Ч21
Crystals, lattices in      13Ч15
Czochralski growth      21Ч28
Damage, radiation      228Ч231
Damage, reactive ion etching      281
Damascene process      265 431Ч432
Dark spaces      250Ч251
Deal triangle      81
Deal Ч Grove model      68Ч71 73
Deep trench      408Ч410
Defect selective etching      263Ч264
Defects, crystal      15Ч21
Defects, epitaxial growth      366Ч368
Defects, killing      561
Defects, oval      385
Degree of saturation      361
Dehydration bake      191
Delta doping      418
Denuded zone      21
Depth of focus      168
Design of Experiments (DOE)      572
Design rules      4 151
Developers      192
Diamond structure      16
Diamond-like carbon      429Ч430
Diazoquinones (DQ)      186
Diborane      366
Dichlorosilane      362
Dielectric isolation (DI)      411
Dielectrics, high permittivity      88Ч89
Dielectrics, rapid thermal processing      140Ч141
Diffraction      155Ч157
Diffusion      8
Diffusion in $SiO_{2}$      59Ч60
Diffusion, atomistic models of      41Ч45
Diffusion, furnaces      60Ч61 90Ч92
Diffusion, heavy doping effects      47Ч52
Diffusion, oxidation enhanced      44
Diffusion, predeposition      45
Diffusion, profiles      48Ч52
Diffusion, pump      245
Diffusion, transient enhanced      138Ч139
Dimethylzinc (DMZ)      375
Direct-coupled FET logic      474
Discharges DC glow      249Ч251
Discharges DC glow, RF      251Ч252
Dislocations      18 367
Dislocations, loops      25
Doping in epitaxial growth      365Ч366
Double diffused drain      457
DQN positive photoresist      186Ч187
Drain engineering      457Ч458
Drain-induced barrier lowering      461Ч462
Drive in diffusion      45Ч46
Dry developable resists      199Ч200
dry etching      see "Etching"
Dry oxidation      68 71
Dry pumps      245
Dry pumps, Fraunhofer      157
Dry pumps, Fresnel      156 166
Dry pumps, grating      158
E-beam evaporation      303Ч304
E-beam exposure      see "Photoresist"
Early effect      489Ч490
ECR plasma      253Ч254
EL2 sites      413
Electromigration      426
Electron beam lithography (EBL)      208Ч215
Electron beam lithography (EBL), resists      227Ч228
Electron beam MBE systems      390Ч391
Electron diffraction (RHEED)      384Ч385
Electronic stopping      106
Electrostatic scanning      103
Ellipsometry      78Ч79
Emissivity      134Ч135
End point detection      272Ч274
Enhancement/depletion technology      441Ч442
Epitaxial growth BCE theory      387Ч389
Epitaxial growth BCE theory, chemical beam      391Ч392
Epitaxial growth BCE theory, Deal model      360
Epitaxial growth BCE theory, defects      366Ч368
Epitaxial growth BCE theory, dopants      365Ч366
Epitaxial growth BCE theory, extended lateral overgrowth      369
Epitaxial growth BCE theory, halide transport GaAs vapor phase      369Ч370
Epitaxial growth BCE theory, heteroepitaxial      370Ч373
Epitaxial growth BCE theory, kink sites      388
Epitaxial growth BCE theory, metallorganic      373Ч378
Epitaxial growth BCE theory, molecular beam      381Ч386
Epitaxial growth BCE theory, selective      368Ч369
Equilibrium, chemical      328Ч330
Etching, anisotropic      269Ч270
Etching, damage      281
Etching, doping selective      263
Etching, HDP systems      282Ч283
Etching, plasma      266Ч274
Etching, reactive ion      277Ч281
Etching, wet      259Ч264
evaporation      295Ч301
Evaporation, deposition rates      297Ч299
Evaporation, electron beam      303Ч304
Evaporation, heating techniques      302Ч304
Evaporation, radiation damage      303Ч304
Evaporation, reactive      300
Evaporation, step coverage      301Ч302
Evaporation, sublimation and      296Ч297
Excimer laser sources      162Ч164
Exciplex lasers      162
Exposure      163 164 165
Extended lateral overgrowth (ELO)      369
Extrinsic breakdown      79
Extrinsic gettering      19
Factors      571Ч575
Fair's vacancy model      42
Faraday cup      103
Faraday dark space      250
Fast ramp furnace      92
Fault kernel      563
Faults, stacking      366Ч367
Feed gas ratio      362
Fick's laws      39Ч41
Field implant      444Ч445
Film stress, extrinsic      518
Film stress, intrinsic      518
Fixed charge      81
FLATS      32
Flexural rigidity      524
Float zone refining      30Ч31
Flow plug      332
Flow process      399
Fluorinated oxide      429
Fluorine to carbon ratio      271
Flux      40
Four point probe      52
Fourier transform infrared (FTIR) spectroscopy      368
Frank Ч Turnbull method      45 51
Fraunhofer diffraction      157
Freeman ion source      100
Frenkel defect      16
Fresnel diffraction      156Ч157
Full factorial experiments      570Ч571
Fused silica      76
GaAs on silicon      372
GaAs, anisotropic etching      280Ч281
GaAs, device isolation      412Ч414
GaAs, FET technologies      471Ч481
GaAs, implant activation in      139Ч140
GaAs, liftoff      283Ч285
GaAs, MESFET      471Ч473
GaAs, MOCVD      373Ч378
GaAs, Schottky diodes      417
GaAs, vapor phase epitaxy      369Ч370
Gas ballast      242
Gas immersion laser doping      462
Gas source MBE      391
Gas throughput      239
Gas-flow dynamics      331Ч336
Gate materials for MESFETs      475Ч476
Gate materials for MOSFETS      454Ч455
Gate oxidation      88Ч92
Gettering      19
Glide      18
Glow discharge      249Ч251
Gold air bridges      479
Grain boundary      19
Grain boundary, stuffing      142
Gross fail area      562
Hall effect      54 520
Halo implants      464
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