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| Àâòîðèçàöèÿ |
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| Ïîèñê ïî óêàçàòåëÿì |
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| Campbell S.A. — The Science and Engineering of Microelectronic Fabrication |
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| Ïðåäìåòíûé óêàçàòåëü |
Halogen lamps 130—131
Hard contact 165
Hardbake 193
HARMST 551—553
Henry's law 70
Heteroepitaxy 370—373
Heterojunction bipolar transistor 503—504
Hexamethyldisilazane (HMDS) 191
High permittivity gate insulators 89
High-aspect ratio microsystems see "HARMST"
High-pressure plasma etching 267—273
Homoepitaxy 360—363
Homogeneous nucleation 346
Homogeneous process 327
Hookes law 516
Hot carrier 455—458
Hot carrier injection, in BJTs 504
Hot metal sputtering 313
Hotwall batch CVD reactor 336
Huygen's principle 155
Hybrid pi model 491
Hydrofluoric acid (HF) 77 260—262
Hydrogen chloride (HCl) 73
Hydrogen termination 359
Immediately Dangerous to Life and Health (IDLH) 374
Implant straggle, of implanted impurities 106 108
Implanted ohmic contacts 418—421
Impurity activation 112—114
Incommensurate heteropitaxy 370—373
Initial growth regime 75—76
Integrated circuit yield 559—560
Intensity 155
Interface state 82—83
Interference 78—79
Interlayer dielectric 429—430
Intermetallics 12
Interstitial 16
Interstitial effects 44
Interstitialcy diffusion 44—45
Intrinsic breakdown 79
Intrinsic carrier concentration 42—43
Intrinsic defect 16
Intrinsic gettering 19
Ion, implantation 98
Ion, milling 274—277
Ionized metal plasma 314—315
Isolation, guard rings 403—404
Isolation, junction 401—403
Isolation, LOCOS methods 404—406
Isolation, semi-insulating substrates 412—414
Isolation, silicon on insulator 411—412
Isolation, trench 407—411
Isothermal heating 128
Junction depth 47
Junction isolation 401—403
Kaufman source 274—275
Kickout-diffusion mechanism 44—45
Killing defect 561
Kinetic theory 236—239
Kinetically controlled processes 330
Kink sites 387
Kirk effect 490
Knudsen cell 383
Kohler projection lithography system 167
Kooi nitride effect 406
Kumakhov lens 221
kurtosis 109
Lamps, UV 159—161
Lanthinum hexaboride 209
Laser scanners 566
Latchup 459—446
Lateral etching see "Etching"
Lattices, crystal 16 41—42
Law of mass action 328—331
Learning Curve 560
Lenses, x-ray 221
Liftoff 283—285
LIGA 551
light emitting diodes 482—484
Lightly doped drain (LDD) 457
Linear rate coefficient 71
Linkup region 500
Liquid encapsulated Czochralski growth (LEC) 27—28
Liquid sources 60—61 374—375
Liquidus curve 11
Lithography see "Optical lithography"
Load locks 355
Loading effect 272
Local interconnect 425
LOCOS 404—407
LOCOS, poly buffered 406—407
LSS (Lindhard, Scharff, and Schintt) tables 107
Magnetic CZ 25
Magnetron sputtering 310—312
Masks, optical 151—153
Masks, optical proximity correction 172—176
Masks, stencils 212
Masks, x-ray 221—224
Mass action law 328—330
Mass transport Coefficient 69—70
Mean free path 237—238
Mechanical to electrical signal transduction 518—523
Mechanics of Materials 515
Meissner trap 318
Membrane deflection 523
MEMS 514—557
MEMS mechanics 523—526
Mercury-arc lamps see "Lamps UV"
Mesa isolation 413
Metal CVD 347—350
Metal-semiconductor field effect transistors (MESFETs) 417 471—472
Metallorganic CVD (MOCVD) 373—378
Metallorganic CVD (MOCVD), carbon contamination in 377—378
Microelectromechanical systems see "MEMS"
Microloading 282
Micromachining, bulk 527—540
Micromachining, surface 540—546
Microstrip line 424—425
Miller indices 14—15
Millimeter microwave ICs (MMICs) 425
Milling, ion 274—277
Misregistration 178—179
Mix-and-match lithography 154
Mobile ionic charge 81—82
MODFETs 480—482
Modulation transfer function 158
molecular beam epitaxy (MBE) 370 381—386
Molecular implant 117
Monolithic microwave IC (MMIC) 478—480
Monomers 185
Morphology 312—313
MOS Technology 442—447
Mosaic 477
MOSFET 439—441
Multicomponent films 304—305
Multilevel metallization 423—428
Multizone heating 132—133
Nanospec 78—79
Natural convection 26 334—336
Negative binomial 563
Negative resists see "Photoresist"
Network formers 77
Neutron transmutation doping 31
Next-generation lithography 205
Nitrided oxides 88—89
Novolac compounds see "Photoresist"
Nuclear stopping 106—107
Numerical aperture 167
Ohmic contacts, alloyed 421—423
Ohmic contacts, implanted 418—421
| Optical absorption coefficient 189—190 207
Optical inspection systems 565—566
Optical integrator 161
optical lithography 6 149 151—179
Optical proximity correction 175—176
Optical pyrometry 133—134
Optical sources 130—132
Orthogonality 572—573
Oval defect 385
Oxidation, Deal — Grove model 68—71 73
Oxidation, doping effects 83—86
Oxidation, dry 68 71
Oxidation, furnaces 90—92
Oxidation, induced stacking faults 86—88
Oxidation, initial 75—76
Oxidation, rapid thermal 140—141
Oxidation, thermal 37 68
Oxide isolation 494—495
Oxide trench and refill process 407—411
packaging 6
Pair diffusion model 51
Palladium diffusion 358—359
Parabolic rate coefficient 71
Particle control 565—567
Paschen's law 306
Pattern shift 367—368
Pearson type IV distribution 109
PECVD systems 343—347
Pellicles 172—174
Penumbral blur 220—221
phase diagram 10—13
Phase shifting 174—175
Phosphosilicate glasses (PSG) 337
Photoacid generator 197
Photoactive compound 183 186—187
photoelectric effect 206
Photomask 151—153 see
photoresist 153 183—184
Photoresist, components 183—184
Photoresist, e-beam 227—228
Photoresist, inorganic 199
Photoresist, silicon containing 199
Photoresist, tracks 194
Photoresist, types 183
Photoresist, x-ray 227—228
Piezoelectric effect 518
Piezoresistance coefficients 521
Piezoresistivity 520
Pill doping 31
Pinchoff voltage 472
Pipes 87
Planar magnetron target 310—311
Planarization 264—266
Planetary 299
plasma 118 249—255
Plasma, DC 249—251
Plasma, ECR 253—254
Plasma, immersion doping 118
Plasma, inductively coupled 254—255
Plasma, RF 251—252
Plug contacts 427—428
Plug flow 332
Point defect 16 561
Poisson's ratio 517
Poly emitters 495—497
Poly-buffered LOCOS 406—407
Polycrystalline silicon 339
Polyimide 430
Polymerization 269—272
Polymers 185
Polymethyl methacrylate (PMMA) 197—198 227—228
Polysilicon oxidation 85—86
Polysilicon, low stress 540
Power dissipation, CMOS 442
Preamorphization 110—112
Precipitate 19
Predeposition diffusion 45
Pressure, kinetic theory 236—239
Pressure, measurement 248—249
Primary defects 112
Process variance 569
Projected range of electrons 207—208
Projected range of implanted impurities 105—108
Projection printing 167—172
Proton implantation 413
Proximity effects 212
Proximity printing 165—166
Pseudomorphic growth 371
Pumping speed 240
Pumps, vacuum 240—247
Punchthrough 443
Pyrometry 133—134
Quenching 13
Radiation 128
Radiation damage 228—230
Radicals 249
Rails 266
RANGE 105
Rapid thermal activation 138—140
Rapid thermal annealers 132—134
Rapid thermal oxidation 140—141
Rapid thermal processing 127
Rapid thermal processing, temperature measurement 133—136
Rapid thermal silicide formation 141—142
Rapid thermal-chemical vapor deposition (RTCVD) 370 379
Raster scanning 211
Ray tracing 155
Rayleigh's criteria 167
RCA clean 356—357
Reachthrough 457
Reaction rate limited 336—337
Reactive ion etching (RIE) 277—281
Real-time adaptive control 568
Recirculation 335—336
Reflecting cavity 131—132
Refractive index 343
Registration 154
Resist processing see "Photoresist"
Resist scumming 260
Resists see "Photoresist"
Resolution 154 184
Reynold's number 332
RHEED 384—385
Rim phase shifting 175
Rotary vane pump 241—242
Rutherford backscattering spectroscopy (RBS) 58
S-chart 569
S-gun 311
Sacrificial layer 540—542
SAGFETs 475
SAINT process 475—476
Salicide process 450
Saturation 361
Scaling, BJT 493
Scaling, MOS 447 448
Scalpel 225
Scanning capacitance microscopy (SGM) 55—56
Scavenging 269
Schottky contacts 414—418
SCRATCH 577
Screening experiments 572
Secondary defects 112
Secondary ion mass spectroscopy (SIMS) 57—59
Seebeck effect 133
Segregation coefficient 25 83—84
Selective epitaxial growth (SEG) 368—369
Selective etch 258—268
Selective thermalization 317
Self-aligned bipolar technology (SA) 499—500
Self-aligned silicide 450—451
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