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Campbell S.A. Ч The Science and Engineering of Microelectronic Fabrication
Campbell S.A. Ч The Science and Engineering of Microelectronic Fabrication



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Ќазвание: The Science and Engineering of Microelectronic Fabrication

јвтор: Campbell S.A.

јннотаци€:

An introduction to microelectronic fabrication Ч Semiconductor substrates Ч Diffusion Ч Thermal oxidation Ч Ion implantation Ч Rapid thermal processing Ч Optical lithography Ч Photoresists Ч Nonoptical lithographic techniques Ч Vacuum science and plasmas Ч Etching Ч Physical deposition: evaporation and sputtering Ч Chemical vapor deposition Ч Epitaxial growth Ч Device isolation, contacts, and metallization Ч CMOS technologies Ч GaAs technologies Ч Silicon bipolar technologies Ч MEMS Ч Integrated circuit manufacturing Ч Appendix 1. Acronyms and common symbols Ч Appendix 2. Properties of selected semiconductor materials Ч Appendix 3. Physical constants Ч Appendix 4. Conversion factors Ч Appendix 5. Some properties of the error function Ч Appendix 6. F values Ч Appendix 7. SUPREM commands


язык: en

–убрика: ‘изика/

—татус предметного указател€: √отов указатель с номерами страниц

ed2k: ed2k stats

»здание: 2. A.

√од издани€: 2001

 оличество страниц: 616

ƒобавлена в каталог: 20.01.2014

ќперации: ѕоложить на полку | —копировать ссылку дл€ форума | —копировать ID
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ѕредметный указатель
Halogen lamps      130Ч131
Hard contact      165
Hardbake      193
HARMST      551Ч553
Henry's law      70
Heteroepitaxy      370Ч373
Heterojunction bipolar transistor      503Ч504
Hexamethyldisilazane (HMDS)      191
High permittivity gate insulators      89
High-aspect ratio microsystems      see "HARMST"
High-pressure plasma etching      267Ч273
Homoepitaxy      360Ч363
Homogeneous nucleation      346
Homogeneous process      327
Hookes law      516
Hot carrier      455Ч458
Hot carrier injection, in BJTs      504
Hot metal sputtering      313
Hotwall batch CVD reactor      336
Huygen's principle      155
Hybrid pi model      491
Hydrofluoric acid (HF)      77 260Ч262
Hydrogen chloride (HCl)      73
Hydrogen termination      359
Immediately Dangerous to Life and Health (IDLH)      374
Implant straggle, of implanted impurities      106 108
Implanted ohmic contacts      418Ч421
Impurity activation      112Ч114
Incommensurate heteropitaxy      370Ч373
Initial growth regime      75Ч76
Integrated circuit yield      559Ч560
Intensity      155
Interface state      82Ч83
Interference      78Ч79
Interlayer dielectric      429Ч430
Intermetallics      12
Interstitial      16
Interstitial effects      44
Interstitialcy diffusion      44Ч45
Intrinsic breakdown      79
Intrinsic carrier concentration      42Ч43
Intrinsic defect      16
Intrinsic gettering      19
Ion, implantation      98
Ion, milling      274Ч277
Ionized metal plasma      314Ч315
Isolation, guard rings      403Ч404
Isolation, junction      401Ч403
Isolation, LOCOS methods      404Ч406
Isolation, semi-insulating substrates      412Ч414
Isolation, silicon on insulator      411Ч412
Isolation, trench      407Ч411
Isothermal heating      128
Junction depth      47
Junction isolation      401Ч403
Kaufman source      274Ч275
Kickout-diffusion mechanism      44Ч45
Killing defect      561
Kinetic theory      236Ч239
Kinetically controlled processes      330
Kink sites      387
Kirk effect      490
Knudsen cell      383
Kohler projection lithography system      167
Kooi nitride effect      406
Kumakhov lens      221
kurtosis      109
Lamps, UV      159Ч161
Lanthinum hexaboride      209
Laser scanners      566
Latchup      459Ч446
Lateral etching      see "Etching"
Lattices, crystal      16 41Ч42
Law of mass action      328Ч331
Learning Curve      560
Lenses, x-ray      221
Liftoff      283Ч285
LIGA      551
light emitting diodes      482Ч484
Lightly doped drain (LDD)      457
Linear rate coefficient      71
Linkup region      500
Liquid encapsulated Czochralski growth (LEC)      27Ч28
Liquid sources      60Ч61 374Ч375
Liquidus curve      11
Lithography      see "Optical lithography"
Load locks      355
Loading effect      272
Local interconnect      425
LOCOS      404Ч407
LOCOS, poly buffered      406Ч407
LSS (Lindhard, Scharff, and Schintt) tables      107
Magnetic CZ      25
Magnetron sputtering      310Ч312
Masks, optical      151Ч153
Masks, optical proximity correction      172Ч176
Masks, stencils      212
Masks, x-ray      221Ч224
Mass action law      328Ч330
Mass transport Coefficient      69Ч70
Mean free path      237Ч238
Mechanical to electrical signal transduction      518Ч523
Mechanics of Materials      515
Meissner trap      318
Membrane deflection      523
MEMS      514Ч557
MEMS mechanics      523Ч526
Mercury-arc lamps      see "Lamps UV"
Mesa isolation      413
Metal CVD      347Ч350
Metal-semiconductor field effect transistors (MESFETs)      417 471Ч472
Metallorganic CVD (MOCVD)      373Ч378
Metallorganic CVD (MOCVD), carbon contamination in      377Ч378
Microelectromechanical systems      see "MEMS"
Microloading      282
Micromachining, bulk      527Ч540
Micromachining, surface      540Ч546
Microstrip line      424Ч425
Miller indices      14Ч15
Millimeter microwave ICs (MMICs)      425
Milling, ion      274Ч277
Misregistration      178Ч179
Mix-and-match lithography      154
Mobile ionic charge      81Ч82
MODFETs      480Ч482
Modulation transfer function      158
molecular beam epitaxy (MBE)      370 381Ч386
Molecular implant      117
Monolithic microwave IC (MMIC)      478Ч480
Monomers      185
Morphology      312Ч313
MOS Technology      442Ч447
Mosaic      477
MOSFET      439Ч441
Multicomponent films      304Ч305
Multilevel metallization      423Ч428
Multizone heating      132Ч133
Nanospec      78Ч79
Natural convection      26 334Ч336
Negative binomial      563
Negative resists      see "Photoresist"
Network formers      77
Neutron transmutation doping      31
Next-generation lithography      205
Nitrided oxides      88Ч89
Novolac compounds      see "Photoresist"
Nuclear stopping      106Ч107
Numerical aperture      167
Ohmic contacts, alloyed      421Ч423
Ohmic contacts, implanted      418Ч421
Optical absorption coefficient      189Ч190 207
Optical inspection systems      565Ч566
Optical integrator      161
optical lithography      6 149 151Ч179
Optical proximity correction      175Ч176
Optical pyrometry      133Ч134
Optical sources      130Ч132
Orthogonality      572Ч573
Oval defect      385
Oxidation, Deal Ч Grove model      68Ч71 73
Oxidation, doping effects      83Ч86
Oxidation, dry      68 71
Oxidation, furnaces      90Ч92
Oxidation, induced stacking faults      86Ч88
Oxidation, initial      75Ч76
Oxidation, rapid thermal      140Ч141
Oxidation, thermal      37 68
Oxide isolation      494Ч495
Oxide trench and refill process      407Ч411
packaging      6
Pair diffusion model      51
Palladium diffusion      358Ч359
Parabolic rate coefficient      71
Particle control      565Ч567
Paschen's law      306
Pattern shift      367Ч368
Pearson type IV distribution      109
PECVD systems      343Ч347
Pellicles      172Ч174
Penumbral blur      220Ч221
phase diagram      10Ч13
Phase shifting      174Ч175
Phosphosilicate glasses (PSG)      337
Photoacid generator      197
Photoactive compound      183 186Ч187
photoelectric effect      206
Photomask      151Ч153 see
photoresist      153 183Ч184
Photoresist, components      183Ч184
Photoresist, e-beam      227Ч228
Photoresist, inorganic      199
Photoresist, silicon containing      199
Photoresist, tracks      194
Photoresist, types      183
Photoresist, x-ray      227Ч228
Piezoelectric effect      518
Piezoresistance coefficients      521
Piezoresistivity      520
Pill doping      31
Pinchoff voltage      472
Pipes      87
Planar magnetron target      310Ч311
Planarization      264Ч266
Planetary      299
plasma      118 249Ч255
Plasma, DC      249Ч251
Plasma, ECR      253Ч254
Plasma, immersion doping      118
Plasma, inductively coupled      254Ч255
Plasma, RF      251Ч252
Plug contacts      427Ч428
Plug flow      332
Point defect      16 561
Poisson's ratio      517
Poly emitters      495Ч497
Poly-buffered LOCOS      406Ч407
Polycrystalline silicon      339
Polyimide      430
Polymerization      269Ч272
Polymers      185
Polymethyl methacrylate (PMMA)      197Ч198 227Ч228
Polysilicon oxidation      85Ч86
Polysilicon, low stress      540
Power dissipation, CMOS      442
Preamorphization      110Ч112
Precipitate      19
Predeposition diffusion      45
Pressure, kinetic theory      236Ч239
Pressure, measurement      248Ч249
Primary defects      112
Process variance      569
Projected range of electrons      207Ч208
Projected range of implanted impurities      105Ч108
Projection printing      167Ч172
Proton implantation      413
Proximity effects      212
Proximity printing      165Ч166
Pseudomorphic growth      371
Pumping speed      240
Pumps, vacuum      240Ч247
Punchthrough      443
Pyrometry      133Ч134
Quenching      13
Radiation      128
Radiation damage      228Ч230
Radicals      249
Rails      266
RANGE      105
Rapid thermal activation      138Ч140
Rapid thermal annealers      132Ч134
Rapid thermal oxidation      140Ч141
Rapid thermal processing      127
Rapid thermal processing, temperature measurement      133Ч136
Rapid thermal silicide formation      141Ч142
Rapid thermal-chemical vapor deposition (RTCVD)      370 379
Raster scanning      211
Ray tracing      155
Rayleigh's criteria      167
RCA clean      356Ч357
Reachthrough      457
Reaction rate limited      336Ч337
Reactive ion etching (RIE)      277Ч281
Real-time adaptive control      568
Recirculation      335Ч336
Reflecting cavity      131Ч132
Refractive index      343
Registration      154
Resist processing      see "Photoresist"
Resist scumming      260
Resists      see "Photoresist"
Resolution      154 184
Reynold's number      332
RHEED      384Ч385
Rim phase shifting      175
Rotary vane pump      241Ч242
Rutherford backscattering spectroscopy (RBS)      58
S-chart      569
S-gun      311
Sacrificial layer      540Ч542
SAGFETs      475
SAINT process      475Ч476
Salicide process      450
Saturation      361
Scaling, BJT      493
Scaling, MOS      447 448
Scalpel      225
Scanning capacitance microscopy (SGM)      55Ч56
Scavenging      269
Schottky contacts      414Ч418
SCRATCH      577
Screening experiments      572
Secondary defects      112
Secondary ion mass spectroscopy (SIMS)      57Ч59
Seebeck effect      133
Segregation coefficient      25 83Ч84
Selective epitaxial growth (SEG)      368Ч369
Selective etch      258Ч268
Selective thermalization      317
Self-aligned bipolar technology (SA)      499Ч500
Self-aligned silicide      450Ч451
1 2 3
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