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Campbell S.A. Ч The Science and Engineering of Microelectronic Fabrication
Campbell S.A. Ч The Science and Engineering of Microelectronic Fabrication



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Ќазвание: The Science and Engineering of Microelectronic Fabrication

јвтор: Campbell S.A.

јннотаци€:

An introduction to microelectronic fabrication Ч Semiconductor substrates Ч Diffusion Ч Thermal oxidation Ч Ion implantation Ч Rapid thermal processing Ч Optical lithography Ч Photoresists Ч Nonoptical lithographic techniques Ч Vacuum science and plasmas Ч Etching Ч Physical deposition: evaporation and sputtering Ч Chemical vapor deposition Ч Epitaxial growth Ч Device isolation, contacts, and metallization Ч CMOS technologies Ч GaAs technologies Ч Silicon bipolar technologies Ч MEMS Ч Integrated circuit manufacturing Ч Appendix 1. Acronyms and common symbols Ч Appendix 2. Properties of selected semiconductor materials Ч Appendix 3. Physical constants Ч Appendix 4. Conversion factors Ч Appendix 5. Some properties of the error function Ч Appendix 6. F values Ч Appendix 7. SUPREM commands


язык: en

–убрика: ‘изика/

—татус предметного указател€: √отов указатель с номерами страниц

ed2k: ed2k stats

»здание: 2. A.

√од издани€: 2001

 оличество страниц: 616

ƒобавлена в каталог: 20.01.2014

ќперации: ѕоложить на полку | —копировать ссылку дл€ форума | —копировать ID
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ѕредметный указатель
Self-interstitial      16 44
Semi-insulating substrates      412Ч414
Sensitivity      183
Shadowing      120Ч121
Shallow junctions      116Ч118 449Ч450 462
Shallow trench isolation      410Ч411
Shaped beams      210Ч211
Sheet resistance      6 52Ч54
Short channel behavior      448
Sidegating      412
Sidewall base contact (SICOS) structure      502Ч503
Sidewall passivation      269Ч271
Silicides      425 450Ч454
Silicides as a diffusion source      118
Silicon dioxide, diffusion in      59Ч60
Silicon dioxide, initial oxidation      75Ч76
Silicon dioxide, linear rate coefficient      71
Silicon dioxide, parabolic rate coefficient      71 84
Silicon dioxide, structure of      76Ч77
Silicon dioxide, thermal oxidation      68Ч94
Silicon dioxide, thickness measurements      77Ч80
Silicon dioxide, wet etching      260
Silicon doped aluminum      419Ч420
Silicon epitaxy      360Ч363
Silicon fusion bonding      538
Silicon nitride plasma etching      272
Silicon ohmic contacts      418Ч421
Silicon on insulator (SOI), isolation techniques      411Ч412
Silicon on sapphire (SOS)      371
Silicon vapor phase, epitaxial growth      360Ч363
SIMNI      118
SIMOX      118Ч120
Sinter step      421
skewness      108
SLIP      19
Softbake      192
Solid phase epitaxy      112Ч113
Solid solubility      12
Solid solution hardening      28
Solid sources      60Ч61
Solidus curve      11
Solvus curve      12
Sorption pump      246Ч247
Space charge effects      117
Spatial coherence      168
Spatial frequency      168
Spectral exitance      128Ч129
Spikes      420Ч421
Spiral inductors      479
Spreading resistance      450
Spreading resistance profilometry      55Ч57
Sputter etching      315
Sputtered barrier metals      318Ч319
sputtering      305Ч312
Sputtering, bias      315Ч316
Sputtering, magnetron      310Ч312
Sputtering, reactive      318Ч319
Sputtering, yield      308Ч310
Square law, MOSFET      441
Stacking fault      19 366
Stagnation point flow      376
Standard buried collector (SBC)      494Ч495
standing waves      178
statistical process control      568Ч569
Stefan Ч Boltzmann relationship      129
Stencil mask      208
Step coverage      295 301Ч302 313Ч315
Steppers      169Ч172
Sticking coefficient      331
Stiction      543
Stoney equation      517
strain      515
Strained layer heteroepitaxy      370Ч371
Strained layer superlattice      372
Stress      515
Stress induced voiding      427
Stress, in deposited layers      319Ч320
Sublimation      296
Substitution impurity      17 41
Substitutional effects      41
Subthreshold behavior      441
Super self-aligned transistor (SST)      501Ч502
Supersaturation      362Ч363
SUPREM III      39 61Ч62 92 122
SUPREM IV      61
Surface reactions      364Ч365
Surface reactions, diffusivity      387
Surface reflections      176Ч178
Surface scanner      566
Survey course      8
SWAMI isolation      407
Swelling in negative resists      187
Switching speed      423Ч424
Symmetric gate      454
Synchnotron      218Ч219
T-gate approach      475Ч476
Tang      24
technology      4
Temperature bias stress      82Ч83
TEOS      338 341
TEOS, thermal decomposition of      343
Tertiarybutylarsine (TBAs)      374
Tetraethylorthosilicate (TEOS)      338
Thermal budget      399
Thermal desorption      357
Thermal flux heating      127Ч128
Thermal isolation      128
Thermal oxidation      see "Oxidation"
Thermal uniformity      142Ч143
Thermionic emission      208Ч209 414
Thermopile      133
Thermoplastic stress      137
Thin film stress      517
Thin film stress gradient      518
Threshold voltage      439Ч441
Throughput      154 239
Time-Dependent Dielectric Breakdown (TDDB) test      79
Titanium nitride (TiN)      142
Total organic content (TOC)      356
Transient annealing effect      117
Trench isolation      407Ч411
Trenching      276
Trichloroethane (TCA)      73
Trichloroethylene (TCE)      73
Triethylaluminum (TEAI)      375
Trimethylaluminum (TMAI)      378
Trimethylgallium (TMG)      373Ч374
Triple diffused (3-D) BIT technology      494Ч495
Tunnel annealing      80
Turbomolecular pump      245
Ultrahigh vacuum chemical vapor deposition (UHVCVD)      380Ч381
Undercut      258
Unit cell      13
Unit process      4
Vacancy      16Ч17 41
vacuums      see "Ultrahigh vacuum chemical vapor deposition"
Vacuums, pumps      240Ч247
Vacuums, seals      247Ч248
Van der Pauw method      53
Vapor phase epitaxy (VPE)      360Ч363
Vapor transport method      60
Vector scanning      212
Vertical cavity surface emitting laser (VCSEL)      484
Vertical furnace      91Ч92
Vertical gradient freeze method      29
Vertical PNPs      459Ч460
View factor      129Ч130
Voiding, stress-induced      427
Wafer      31Ч33
Wafer, bonding      411Ч412
Wafer, flats      32
Wafer, impurities in      39
Wafer, production      31Ч32
Wafer, sizes      32Ч33
Wafer, specifications      33
Wafer, thinning      480
Walled transistor      500
Wells      442Ч444
Wet chemical clean      356Ч357
Wet etching      259Ч264
Wet etching, anisotropic      527Ч530
Wet etching, endpoint detection      530Ч535
Wet etching, isotropic      527Ч530
Wheatstone bridge      521
White ribbon effect      406
Wicking      452
Witness wafer      565
Wolff rearrangement      186
X-chart      569
X-ray lithography (XRL)      551
X-ray lithography (XRL), masks      221Ч224
X-ray lithography (XRL), mirrors      221
X-ray lithography (XRL), projection aligner      224Ч227
X-ray lithography (XRL), proximity aligner      219Ч221
X-ray lithography (XRL), resists      227Ч228
X-ray lithography (XRL), sources      216Ч219
Yield      560
Yield strength      137
Yield, model      562Ч564
Yield, prediction and tracking      560Ч562
Zener tunneling      490
Zincblende structure      16
Zone model      312
1 2 3
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