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Àâòîðèçàöèÿ |
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Ïîèñê ïî óêàçàòåëÿì |
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Campbell S.A. — The Science and Engineering of Microelectronic Fabrication |
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Ïðåäìåòíûé óêàçàòåëü |
Self-interstitial 16 44
Semi-insulating substrates 412—414
Sensitivity 183
Shadowing 120—121
Shallow junctions 116—118 449—450 462
Shallow trench isolation 410—411
Shaped beams 210—211
Sheet resistance 6 52—54
Short channel behavior 448
Sidegating 412
Sidewall base contact (SICOS) structure 502—503
Sidewall passivation 269—271
Silicides 425 450—454
Silicides as a diffusion source 118
Silicon dioxide, diffusion in 59—60
Silicon dioxide, initial oxidation 75—76
Silicon dioxide, linear rate coefficient 71
Silicon dioxide, parabolic rate coefficient 71 84
Silicon dioxide, structure of 76—77
Silicon dioxide, thermal oxidation 68—94
Silicon dioxide, thickness measurements 77—80
Silicon dioxide, wet etching 260
Silicon doped aluminum 419—420
Silicon epitaxy 360—363
Silicon fusion bonding 538
Silicon nitride plasma etching 272
Silicon ohmic contacts 418—421
Silicon on insulator (SOI), isolation techniques 411—412
Silicon on sapphire (SOS) 371
Silicon vapor phase, epitaxial growth 360—363
SIMNI 118
SIMOX 118—120
Sinter step 421
skewness 108
SLIP 19
Softbake 192
Solid phase epitaxy 112—113
Solid solubility 12
Solid solution hardening 28
Solid sources 60—61
Solidus curve 11
Solvus curve 12
Sorption pump 246—247
Space charge effects 117
Spatial coherence 168
Spatial frequency 168
Spectral exitance 128—129
Spikes 420—421
Spiral inductors 479
Spreading resistance 450
Spreading resistance profilometry 55—57
Sputter etching 315
Sputtered barrier metals 318—319
sputtering 305—312
Sputtering, bias 315—316
Sputtering, magnetron 310—312
Sputtering, reactive 318—319
Sputtering, yield 308—310
Square law, MOSFET 441
Stacking fault 19 366
Stagnation point flow 376
Standard buried collector (SBC) 494—495
standing waves 178
statistical process control 568—569
Stefan — Boltzmann relationship 129
Stencil mask 208
Step coverage 295 301—302 313—315
Steppers 169—172
Sticking coefficient 331
Stiction 543
Stoney equation 517
strain 515
Strained layer heteroepitaxy 370—371
Strained layer superlattice 372
Stress 515
Stress induced voiding 427
Stress, in deposited layers 319—320
Sublimation 296
Substitution impurity 17 41
Substitutional effects 41
Subthreshold behavior 441
Super self-aligned transistor (SST) 501—502
Supersaturation 362—363
SUPREM III 39 61—62 92 122
SUPREM IV 61
Surface reactions 364—365
Surface reactions, diffusivity 387
Surface reflections 176—178
Surface scanner 566
Survey course 8
SWAMI isolation 407
| Swelling in negative resists 187
Switching speed 423—424
Symmetric gate 454
Synchnotron 218—219
T-gate approach 475—476
Tang 24
technology 4
Temperature bias stress 82—83
TEOS 338 341
TEOS, thermal decomposition of 343
Tertiarybutylarsine (TBAs) 374
Tetraethylorthosilicate (TEOS) 338
Thermal budget 399
Thermal desorption 357
Thermal flux heating 127—128
Thermal isolation 128
Thermal oxidation see "Oxidation"
Thermal uniformity 142—143
Thermionic emission 208—209 414
Thermopile 133
Thermoplastic stress 137
Thin film stress 517
Thin film stress gradient 518
Threshold voltage 439—441
Throughput 154 239
Time-Dependent Dielectric Breakdown (TDDB) test 79
Titanium nitride (TiN) 142
Total organic content (TOC) 356
Transient annealing effect 117
Trench isolation 407—411
Trenching 276
Trichloroethane (TCA) 73
Trichloroethylene (TCE) 73
Triethylaluminum (TEAI) 375
Trimethylaluminum (TMAI) 378
Trimethylgallium (TMG) 373—374
Triple diffused (3-D) BIT technology 494—495
Tunnel annealing 80
Turbomolecular pump 245
Ultrahigh vacuum chemical vapor deposition (UHVCVD) 380—381
Undercut 258
Unit cell 13
Unit process 4
Vacancy 16—17 41
vacuums see "Ultrahigh vacuum chemical vapor deposition"
Vacuums, pumps 240—247
Vacuums, seals 247—248
Van der Pauw method 53
Vapor phase epitaxy (VPE) 360—363
Vapor transport method 60
Vector scanning 212
Vertical cavity surface emitting laser (VCSEL) 484
Vertical furnace 91—92
Vertical gradient freeze method 29
Vertical PNPs 459—460
View factor 129—130
Voiding, stress-induced 427
Wafer 31—33
Wafer, bonding 411—412
Wafer, flats 32
Wafer, impurities in 39
Wafer, production 31—32
Wafer, sizes 32—33
Wafer, specifications 33
Wafer, thinning 480
Walled transistor 500
Wells 442—444
Wet chemical clean 356—357
Wet etching 259—264
Wet etching, anisotropic 527—530
Wet etching, endpoint detection 530—535
Wet etching, isotropic 527—530
Wheatstone bridge 521
White ribbon effect 406
Wicking 452
Witness wafer 565
Wolff rearrangement 186
X-chart 569
X-ray lithography (XRL) 551
X-ray lithography (XRL), masks 221—224
X-ray lithography (XRL), mirrors 221
X-ray lithography (XRL), projection aligner 224—227
X-ray lithography (XRL), proximity aligner 219—221
X-ray lithography (XRL), resists 227—228
X-ray lithography (XRL), sources 216—219
Yield 560
Yield strength 137
Yield, model 562—564
Yield, prediction and tracking 560—562
Zener tunneling 490
Zincblende structure 16
Zone model 312
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Ðåêëàìà |
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