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Campbell S.A. — The Science and Engineering of Microelectronic Fabrication
Campbell S.A. — The Science and Engineering of Microelectronic Fabrication



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Íàçâàíèå: The Science and Engineering of Microelectronic Fabrication

Àâòîð: Campbell S.A.

Àííîòàöèÿ:

An introduction to microelectronic fabrication — Semiconductor substrates — Diffusion — Thermal oxidation — Ion implantation — Rapid thermal processing — Optical lithography — Photoresists — Nonoptical lithographic techniques — Vacuum science and plasmas — Etching — Physical deposition: evaporation and sputtering — Chemical vapor deposition — Epitaxial growth — Device isolation, contacts, and metallization — CMOS technologies — GaAs technologies — Silicon bipolar technologies — MEMS — Integrated circuit manufacturing — Appendix 1. Acronyms and common symbols — Appendix 2. Properties of selected semiconductor materials — Appendix 3. Physical constants — Appendix 4. Conversion factors — Appendix 5. Some properties of the error function — Appendix 6. F values — Appendix 7. SUPREM commands


ßçûê: en

Ðóáðèêà: Ôèçèêà/

Ñòàòóñ ïðåäìåòíîãî óêàçàòåëÿ: Ãîòîâ óêàçàòåëü ñ íîìåðàìè ñòðàíèö

ed2k: ed2k stats

Èçäàíèå: 2. A.

Ãîä èçäàíèÿ: 2001

Êîëè÷åñòâî ñòðàíèö: 616

Äîáàâëåíà â êàòàëîã: 20.01.2014

Îïåðàöèè: Ïîëîæèòü íà ïîëêó | Ñêîïèðîâàòü ññûëêó äëÿ ôîðóìà | Ñêîïèðîâàòü ID
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Ïðåäìåòíûé óêàçàòåëü
Self-interstitial      16 44
Semi-insulating substrates      412—414
Sensitivity      183
Shadowing      120—121
Shallow junctions      116—118 449—450 462
Shallow trench isolation      410—411
Shaped beams      210—211
Sheet resistance      6 52—54
Short channel behavior      448
Sidegating      412
Sidewall base contact (SICOS) structure      502—503
Sidewall passivation      269—271
Silicides      425 450—454
Silicides as a diffusion source      118
Silicon dioxide, diffusion in      59—60
Silicon dioxide, initial oxidation      75—76
Silicon dioxide, linear rate coefficient      71
Silicon dioxide, parabolic rate coefficient      71 84
Silicon dioxide, structure of      76—77
Silicon dioxide, thermal oxidation      68—94
Silicon dioxide, thickness measurements      77—80
Silicon dioxide, wet etching      260
Silicon doped aluminum      419—420
Silicon epitaxy      360—363
Silicon fusion bonding      538
Silicon nitride plasma etching      272
Silicon ohmic contacts      418—421
Silicon on insulator (SOI), isolation techniques      411—412
Silicon on sapphire (SOS)      371
Silicon vapor phase, epitaxial growth      360—363
SIMNI      118
SIMOX      118—120
Sinter step      421
skewness      108
SLIP      19
Softbake      192
Solid phase epitaxy      112—113
Solid solubility      12
Solid solution hardening      28
Solid sources      60—61
Solidus curve      11
Solvus curve      12
Sorption pump      246—247
Space charge effects      117
Spatial coherence      168
Spatial frequency      168
Spectral exitance      128—129
Spikes      420—421
Spiral inductors      479
Spreading resistance      450
Spreading resistance profilometry      55—57
Sputter etching      315
Sputtered barrier metals      318—319
sputtering      305—312
Sputtering, bias      315—316
Sputtering, magnetron      310—312
Sputtering, reactive      318—319
Sputtering, yield      308—310
Square law, MOSFET      441
Stacking fault      19 366
Stagnation point flow      376
Standard buried collector (SBC)      494—495
standing waves      178
statistical process control      568—569
Stefan — Boltzmann relationship      129
Stencil mask      208
Step coverage      295 301—302 313—315
Steppers      169—172
Sticking coefficient      331
Stiction      543
Stoney equation      517
strain      515
Strained layer heteroepitaxy      370—371
Strained layer superlattice      372
Stress      515
Stress induced voiding      427
Stress, in deposited layers      319—320
Sublimation      296
Substitution impurity      17 41
Substitutional effects      41
Subthreshold behavior      441
Super self-aligned transistor (SST)      501—502
Supersaturation      362—363
SUPREM III      39 61—62 92 122
SUPREM IV      61
Surface reactions      364—365
Surface reactions, diffusivity      387
Surface reflections      176—178
Surface scanner      566
Survey course      8
SWAMI isolation      407
Swelling in negative resists      187
Switching speed      423—424
Symmetric gate      454
Synchnotron      218—219
T-gate approach      475—476
Tang      24
technology      4
Temperature bias stress      82—83
TEOS      338 341
TEOS, thermal decomposition of      343
Tertiarybutylarsine (TBAs)      374
Tetraethylorthosilicate (TEOS)      338
Thermal budget      399
Thermal desorption      357
Thermal flux heating      127—128
Thermal isolation      128
Thermal oxidation      see "Oxidation"
Thermal uniformity      142—143
Thermionic emission      208—209 414
Thermopile      133
Thermoplastic stress      137
Thin film stress      517
Thin film stress gradient      518
Threshold voltage      439—441
Throughput      154 239
Time-Dependent Dielectric Breakdown (TDDB) test      79
Titanium nitride (TiN)      142
Total organic content (TOC)      356
Transient annealing effect      117
Trench isolation      407—411
Trenching      276
Trichloroethane (TCA)      73
Trichloroethylene (TCE)      73
Triethylaluminum (TEAI)      375
Trimethylaluminum (TMAI)      378
Trimethylgallium (TMG)      373—374
Triple diffused (3-D) BIT technology      494—495
Tunnel annealing      80
Turbomolecular pump      245
Ultrahigh vacuum chemical vapor deposition (UHVCVD)      380—381
Undercut      258
Unit cell      13
Unit process      4
Vacancy      16—17 41
vacuums      see "Ultrahigh vacuum chemical vapor deposition"
Vacuums, pumps      240—247
Vacuums, seals      247—248
Van der Pauw method      53
Vapor phase epitaxy (VPE)      360—363
Vapor transport method      60
Vector scanning      212
Vertical cavity surface emitting laser (VCSEL)      484
Vertical furnace      91—92
Vertical gradient freeze method      29
Vertical PNPs      459—460
View factor      129—130
Voiding, stress-induced      427
Wafer      31—33
Wafer, bonding      411—412
Wafer, flats      32
Wafer, impurities in      39
Wafer, production      31—32
Wafer, sizes      32—33
Wafer, specifications      33
Wafer, thinning      480
Walled transistor      500
Wells      442—444
Wet chemical clean      356—357
Wet etching      259—264
Wet etching, anisotropic      527—530
Wet etching, endpoint detection      530—535
Wet etching, isotropic      527—530
Wheatstone bridge      521
White ribbon effect      406
Wicking      452
Witness wafer      565
Wolff rearrangement      186
X-chart      569
X-ray lithography (XRL)      551
X-ray lithography (XRL), masks      221—224
X-ray lithography (XRL), mirrors      221
X-ray lithography (XRL), projection aligner      224—227
X-ray lithography (XRL), proximity aligner      219—221
X-ray lithography (XRL), resists      227—228
X-ray lithography (XRL), sources      216—219
Yield      560
Yield strength      137
Yield, model      562—564
Yield, prediction and tracking      560—562
Zener tunneling      490
Zincblende structure      16
Zone model      312
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