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Kwok K.Ng. — Complete guide to semiconductor devices
Kwok K.Ng. — Complete guide to semiconductor devices

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Название: Complete guide to semiconductor devices

Автор: Kwok K.Ng.

Аннотация:

Semiconductor devices are the basic components of integrated circuits and are responsible for the startling rapid growth of the electronics industry over the past 50 years. This book is the only quick, practical and balanced survey of the field to semiconductor devices available.


Язык: en

Рубрика: Технология/

Статус предметного указателя: Готов указатель с номерами страниц

ed2k: ed2k stats

Год издания: 1995

Количество страниц: 677

Добавлена в каталог: 04.11.2005

Операции: Положить на полку | Скопировать ссылку для форума | Скопировать ID
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Предметный указатель
$C^3$ laser      392
$P^2CCD$      132 142
1GT      355
Abrupt junction      13
Absorption coefficient      21 385 449 464 465 475 482 620
Absorption edge      483
Accelerometer      509
Acceptor-type trap      126
Acoustic-wave device      503 510
acronyms      639
Active waveguide      486
ADFET      522
Adsorption field-effect transistor      522
Air mass      476
Airy function      470 471
AM      588 590
AM0      477
Ambipolar diffusion coefficient      26 357 369
Ambipolar diffusion length      27
AMI      477
Ammeter      499
Amorphous memory switch      161
Amorphous Si      159
Amorphous threshold switch      158
Amplification factor      527
Amplifier      593 598
Amplitude modulation      590
Amsotype heterojunction      19 48
Analog multiplier      499
Analog transistor      212 217
Anode short      346
Antireflection coating      476
APD      425
Apodisation      512
Arrhenms plot      556
ASCR      346 347
Asymmetric SCR      346
Asymmetric thynstor      346
Attenuation      28 599
Avalanche      324 327 467
Avalanche injection      322
Avalanche photodiode      405 425
Avalanche phototransistor      437
Avalanche shock front      82
Avalanche, breakdown      186 339 348 352 559
Avalanche, multiplication      16 84 147 425 426 559
Back diode      62
Backward diode      62
Ballistic transport      112 210 267 551 565
Bardeen — Cooper — Schrieffer model      529
BARITT diode      45 84 89 592
Barrier height      33 412 522 566 569
Barrier height, measurement      36
Barrier leverage factor      44
Barrier-injection transit-time diode      84
Base transport factor      246 259 265 303
BAW device      511 514
BBD      132 142
BCCD      132 140
BCS model      529
Bias charge      137
BICFET      276 284
BiCMOS      174 252
BiFET      186 355
Bipolar device      4
Bipolar FET      355
Bipolar inversion-channel field-effect transistor      276
Bipolar-JFET      186
Bipolar-mode SIT      212 218
Bipolartransistor      2 4 6 11 21 38 48 163 179 186 195 219 240 277 345 355 356 358 359 433 500
Bistable etalon      467 468
Bistable Fabry — Perot resonator      468
Bistable optical device      464 467 472 602
Black-body radiation      492 601
Blocking voltage      338
Body effect      165
Bolometer      399 492
Bound-to-bound (transition)      446 447
Bound-to-continuum (transition)      446 447
Bound-to-extended (transition)      447
Bound-to-mmiband (transition)      446 449
Bragg reflection      540
Bragg scattering      392
Breakdown      16 178 559
Breakdown, field      24
Breakdown, voltage      19 23 24 248 428 563
Breakover diode      347 356
Breakover voltage      338 342 351
Bridge rectifier      586
BSIT      218
Bucket-brigade device      132 142
Bulk unipolar diode      46
Bulk unipolar transistor      281
Bulk-acoustic-wave device      511
Bulk-barrier diode      41
Bulk-barrier phototransistor      438
Bulk-barrier transistor      281
Bullt-in potential      181 209
Buned-channel CCD      132 140
Buned-hcterojunction laser      390
Buried channel, MOSFET      165
C1D      422
Camel diode      41 45 281 291 295 438
Camel transistor      291 295
Capacitor      129
Capacitor, metal-insulator-semiconductor      128
Capacitor, metal-oxide-semiconductor      121
Capacitor, MIS      128
Capacitor, MOS      121
Capacitor, speed-up      130
Capacitor, voltage-dependent      121
Carrier-domain magnetic-field sensor      502
Catalytic metal      522
Catalytic-metal sensor      522
Cathode      526
Cathode short      343 346
Cat’s whisker      11 31 240 545
CC1S      140 407 416
CCD      121 128 132 414 416
CCD, buned-channel      132 140
CCD, peristaltic      132 140
CCD, profiled-penstaltic      132 142
CCD, surface-channel      132
CH1NT      268 272
Chalcogenide semiconductor      158 159
Channel electron multiplier      457
Channeled-substrate planar laser      390
Charge neutrality      369
Charge sharing      172
Charge-Coupled Device      132 416
Charge-coupled image sensor      140 416
Charge-flow transistor      522
Charge-injection device      422
Charge-injection transistor      268
Charge-transfer device      132 416
Charge-transfer image sensor      416
CHEMFET      517
Chemically sensitive field-effect transistor      517
Child — Langmmr law      526 565
Chip resistor      106
Chirping      485
Choke      536
Cholesteric ordering      538 540
Chromatic dispersion      599
Clamper      587
Cleaved-coupled-cavity laser      392
Clipper      587
CMOS      164
Coherent (light)      385
Coil      535
Comb transducer      511
COMFET      355 356
Common-base current gain      246 364
Common-emitter current gain      246 260 266 298
Complementary circuit      186
Complementary MOS      164
Composition superlattice      584
Concentrator      480
Conductance method      127
Conductivity      1
Conductivity modulation      363 369
Conductivity-modulated field-effect transistor      355
Conductor      1
Constants, fundamental      651
Continuity equation      14 557 637
Cooper pair      530
Coulomb force      569
CTD      132 416
CTIS      416
Curie temperature      493
Current equation      14 637
Current gain, common-base      246
Current gain, common-emitter      246
Cutoff frequency      10 173 184 194 202 224 249
Cyclotron resonance      579
Cyclotron resonance energy      400
Dark current      476 479
Darlington amplifier      254
Darlington phototransistor      436
DBR      393
DDD      173
Debye length      637
Delay-line oscillator      516
Delayed mode      68 70
Delta-doped FET      221
Delta-doped HFET      203
Dember effect      400
Dember-effect detector      400
Demultiplexer      595
Depleted-base transistor      218
Depletion approximation      125 564 638
Depletion nomograph      619
Depletion width      123 638
Depletion(-mode) device      165 185 195 199 221 223 606
Depletion-layer capacitance      17
Detector, nuclear-radiation      29 414
Detector, photo-      see “Photodetector”
DH laser      387 390
DHBT      254
DHFET      203
DIAC      348
Dielectric relaxation time      68
Differential amplifier      598
Diffusion capacitance      17
Diffusion coefficient      626
Diffusion coefficient, ambipolar      26 369
Diffusion current      13 27 215 217 369 404 405 479 637
diffusion length      455 478 637
Diffusion length, ambipolar      27
Diode      3 4 586
Diode AC switch      348
Diode tube      526
Diode, back      62
Diode, backward      62
Diode, BARITT      45 84 89 592
Diode, barrier-injection transit-time      84
Diode, breakover      347 356
Diode, bulk unipolar      46
Diode, bulk-barrier      41
Diode, camel      41 45 281 291 295 438
Diode, double-barrier      92
Diode, double-base      361
Diode, double-junction      111
Diode, double-velocity avalanche transit-time      83
Diode, double-velocity transit-time      89
Diode, DOVATT      83 89
Diode, DOVETT      89
Diode, Esaki      56
Diode, fast-recovery      19
Diode, field-effect      186
Diode, four-layer      347
Diode, gate-controlled      177
Diode, gated      177 520
Diode, Gunn      63
Diode, hot-carrier      30
Diode, hot-electron      30
Diode, impact-ionization-avalanche transit-time      74
Diode, IMPATT      71 74 84 88 89 592
Diode, ion-controlled      520
Diode, laser      382
Diode, LED      372 383 385 387 402 538 599
Diode, light-emitting      372
Diode, magnetodiode      500
Diode, MBM      545
Diode, metal-barrier-metal      545
Diode, metal-insulator-metal      545
Diode, metal-insulator-semiconductor tunnel      39
Diode, metal-oxide-metal      545
Diode, MIM      545
Diode, MIS tunnel      39 143 146 284 289 522
Diode, Misawa      74 80
Diode, MITATT      83
Diode, mixed-tunnel-avalanche transit-time      83
Diode, MOM      545
Diode, n-i-n      111
Diode, p-i-n      23 357 366 367 368 464 465 482 500
Diode, p-i-n transit-time      80
Diode, p-i-p      111
Diode, p-n junction      6 11 23 109 127
Diode, p-n-p-n      347
Diode, PDB      41 151
Diode, planar-doped-barner      41 54 151 281 566
Diode, punch-through      89
Diode, quantum-well-injection transit-time      91
Diode, QW1TT      91
Diode, Read      74
Diode, real-space-transfer      100
Diode, resonant-tunneling      91 92 228 233 306 312 317
Diode, RST      100
Diode, Schottky-barrier      6 21 30 41 109 118 127 264 522 566 571 588
Diode, Shockley      347
Diode, snap-back      19
Diode, snap-off      19
Diode, step-recovery      19
Diode, superluminescent      381
Diode, surface-barrier      30
Diode, TED      45
Diode, TRAPATT      81
Diode, trapped-plasma avalanche-triggered transit      81
Diode, triangular-barrier      41
Diode, tunnel      56 387 533 586
Diode, tunnel-injection transit-time      90
Diode, TUNNETT      89 90 91
Diode, vancap      21
Diode, varactor      21 121 127
Diode, Zener      19 89
Dipole      66 67
Director      538
Dispersive nonlineanty      470
Displacement current      637
Display      379
Dissipation factor      129
Dissipative nonlinearity      470
Dissipative optical bistability      470
Distributed — Bragg reflector      393
Distributed — Bragg-reflector laser      393
Distributed-feedback laser      392
DMOS transistor      174 355 356 357
DOES      157
Domain      68
1 2 3 4 5 6
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