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| Авторизация |
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| Поиск по указателям |
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| Kwok K.Ng. — Complete guide to semiconductor devices |
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| Предметный указатель |
 laser 392
 132 142
1GT 355
Abrupt junction 13
Absorption coefficient 21 385 449 464 465 475 482 620
Absorption edge 483
Accelerometer 509
Acceptor-type trap 126
Acoustic-wave device 503 510
acronyms 639
Active waveguide 486
ADFET 522
Adsorption field-effect transistor 522
Air mass 476
Airy function 470 471
AM 588 590
AM0 477
Ambipolar diffusion coefficient 26 357 369
Ambipolar diffusion length 27
AMI 477
Ammeter 499
Amorphous memory switch 161
Amorphous Si 159
Amorphous threshold switch 158
Amplification factor 527
Amplifier 593 598
Amplitude modulation 590
Amsotype heterojunction 19 48
Analog multiplier 499
Analog transistor 212 217
Anode short 346
Antireflection coating 476
APD 425
Apodisation 512
Arrhenms plot 556
ASCR 346 347
Asymmetric SCR 346
Asymmetric thynstor 346
Attenuation 28 599
Avalanche 324 327 467
Avalanche injection 322
Avalanche photodiode 405 425
Avalanche phototransistor 437
Avalanche shock front 82
Avalanche, breakdown 186 339 348 352 559
Avalanche, multiplication 16 84 147 425 426 559
Back diode 62
Backward diode 62
Ballistic transport 112 210 267 551 565
Bardeen — Cooper — Schrieffer model 529
BARITT diode 45 84 89 592
Barrier height 33 412 522 566 569
Barrier height, measurement 36
Barrier leverage factor 44
Barrier-injection transit-time diode 84
Base transport factor 246 259 265 303
BAW device 511 514
BBD 132 142
BCCD 132 140
BCS model 529
Bias charge 137
BICFET 276 284
BiCMOS 174 252
BiFET 186 355
Bipolar device 4
Bipolar FET 355
Bipolar inversion-channel field-effect transistor 276
Bipolar-JFET 186
Bipolar-mode SIT 212 218
Bipolartransistor 2 4 6 11 21 38 48 163 179 186 195 219 240 277 345 355 356 358 359 433 500
Bistable etalon 467 468
Bistable Fabry — Perot resonator 468
Bistable optical device 464 467 472 602
Black-body radiation 492 601
Blocking voltage 338
Body effect 165
Bolometer 399 492
Bound-to-bound (transition) 446 447
Bound-to-continuum (transition) 446 447
Bound-to-extended (transition) 447
Bound-to-mmiband (transition) 446 449
Bragg reflection 540
Bragg scattering 392
Breakdown 16 178 559
Breakdown, field 24
Breakdown, voltage 19 23 24 248 428 563
Breakover diode 347 356
Breakover voltage 338 342 351
Bridge rectifier 586
BSIT 218
Bucket-brigade device 132 142
Bulk unipolar diode 46
Bulk unipolar transistor 281
Bulk-acoustic-wave device 511
Bulk-barrier diode 41
Bulk-barrier phototransistor 438
Bulk-barrier transistor 281
Bullt-in potential 181 209
Buned-channel CCD 132 140
Buned-hcterojunction laser 390
Buried channel, MOSFET 165
C1D 422
Camel diode 41 45 281 291 295 438
Camel transistor 291 295
Capacitor 129
Capacitor, metal-insulator-semiconductor 128
Capacitor, metal-oxide-semiconductor 121
Capacitor, MIS 128
Capacitor, MOS 121
Capacitor, speed-up 130
Capacitor, voltage-dependent 121
Carrier-domain magnetic-field sensor 502
Catalytic metal 522
Catalytic-metal sensor 522
Cathode 526
Cathode short 343 346
Cat’s whisker 11 31 240 545
CC1S 140 407 416
CCD 121 128 132 414 416
CCD, buned-channel 132 140
CCD, peristaltic 132 140
CCD, profiled-penstaltic 132 142
CCD, surface-channel 132
CH1NT 268 272
Chalcogenide semiconductor 158 159
Channel electron multiplier 457
Channeled-substrate planar laser 390
Charge neutrality 369
Charge sharing 172
Charge-Coupled Device 132 416
Charge-coupled image sensor 140 416
Charge-flow transistor 522
Charge-injection device 422
Charge-injection transistor 268
Charge-transfer device 132 416
Charge-transfer image sensor 416
CHEMFET 517
Chemically sensitive field-effect transistor 517
Child — Langmmr law 526 565
Chip resistor 106
Chirping 485
Choke 536
Cholesteric ordering 538 540
Chromatic dispersion 599
Clamper 587
Cleaved-coupled-cavity laser 392
Clipper 587
CMOS 164
Coherent (light) 385
Coil 535
| Comb transducer 511
COMFET 355 356
Common-base current gain 246 364
Common-emitter current gain 246 260 266 298
Complementary circuit 186
Complementary MOS 164
Composition superlattice 584
Concentrator 480
Conductance method 127
Conductivity 1
Conductivity modulation 363 369
Conductivity-modulated field-effect transistor 355
Conductor 1
Constants, fundamental 651
Continuity equation 14 557 637
Cooper pair 530
Coulomb force 569
CTD 132 416
CTIS 416
Curie temperature 493
Current equation 14 637
Current gain, common-base 246
Current gain, common-emitter 246
Cutoff frequency 10 173 184 194 202 224 249
Cyclotron resonance 579
Cyclotron resonance energy 400
Dark current 476 479
Darlington amplifier 254
Darlington phototransistor 436
DBR 393
DDD 173
Debye length 637
Delay-line oscillator 516
Delayed mode 68 70
Delta-doped FET 221
Delta-doped HFET 203
Dember effect 400
Dember-effect detector 400
Demultiplexer 595
Depleted-base transistor 218
Depletion approximation 125 564 638
Depletion nomograph 619
Depletion width 123 638
Depletion(-mode) device 165 185 195 199 221 223 606
Depletion-layer capacitance 17
Detector, nuclear-radiation 29 414
Detector, photo- see “Photodetector”
DH laser 387 390
DHBT 254
DHFET 203
DIAC 348
Dielectric relaxation time 68
Differential amplifier 598
Diffusion capacitance 17
Diffusion coefficient 626
Diffusion coefficient, ambipolar 26 369
Diffusion current 13 27 215 217 369 404 405 479 637
diffusion length 455 478 637
Diffusion length, ambipolar 27
Diode 3 4 586
Diode AC switch 348
Diode tube 526
Diode, back 62
Diode, backward 62
Diode, BARITT 45 84 89 592
Diode, barrier-injection transit-time 84
Diode, breakover 347 356
Diode, bulk unipolar 46
Diode, bulk-barrier 41
Diode, camel 41 45 281 291 295 438
Diode, double-barrier 92
Diode, double-base 361
Diode, double-junction 111
Diode, double-velocity avalanche transit-time 83
Diode, double-velocity transit-time 89
Diode, DOVATT 83 89
Diode, DOVETT 89
Diode, Esaki 56
Diode, fast-recovery 19
Diode, field-effect 186
Diode, four-layer 347
Diode, gate-controlled 177
Diode, gated 177 520
Diode, Gunn 63
Diode, hot-carrier 30
Diode, hot-electron 30
Diode, impact-ionization-avalanche transit-time 74
Diode, IMPATT 71 74 84 88 89 592
Diode, ion-controlled 520
Diode, laser 382
Diode, LED 372 383 385 387 402 538 599
Diode, light-emitting 372
Diode, magnetodiode 500
Diode, MBM 545
Diode, metal-barrier-metal 545
Diode, metal-insulator-metal 545
Diode, metal-insulator-semiconductor tunnel 39
Diode, metal-oxide-metal 545
Diode, MIM 545
Diode, MIS tunnel 39 143 146 284 289 522
Diode, Misawa 74 80
Diode, MITATT 83
Diode, mixed-tunnel-avalanche transit-time 83
Diode, MOM 545
Diode, n-i-n 111
Diode, p-i-n 23 357 366 367 368 464 465 482 500
Diode, p-i-n transit-time 80
Diode, p-i-p 111
Diode, p-n junction 6 11 23 109 127
Diode, p-n-p-n 347
Diode, PDB 41 151
Diode, planar-doped-barner 41 54 151 281 566
Diode, punch-through 89
Diode, quantum-well-injection transit-time 91
Diode, QW1TT 91
Diode, Read 74
Diode, real-space-transfer 100
Diode, resonant-tunneling 91 92 228 233 306 312 317
Diode, RST 100
Diode, Schottky-barrier 6 21 30 41 109 118 127 264 522 566 571 588
Diode, Shockley 347
Diode, snap-back 19
Diode, snap-off 19
Diode, step-recovery 19
Diode, superluminescent 381
Diode, surface-barrier 30
Diode, TED 45
Diode, TRAPATT 81
Diode, trapped-plasma avalanche-triggered transit 81
Diode, triangular-barrier 41
Diode, tunnel 56 387 533 586
Diode, tunnel-injection transit-time 90
Diode, TUNNETT 89 90 91
Diode, vancap 21
Diode, varactor 21 121 127
Diode, Zener 19 89
Dipole 66 67
Director 538
Dispersive nonlineanty 470
Displacement current 637
Display 379
Dissipation factor 129
Dissipative nonlinearity 470
Dissipative optical bistability 470
Distributed — Bragg reflector 393
Distributed — Bragg-reflector laser 393
Distributed-feedback laser 392
DMOS transistor 174 355 356 357
DOES 157
Domain 68
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