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Kwok K.Ng. — Complete guide to semiconductor devices

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Название: Complete guide to semiconductor devices

Автор: Kwok K.Ng.

Аннотация:

Semiconductor devices are the basic components of integrated circuits and are responsible for the startling rapid growth of the electronics industry over the past 50 years. This book is the only quick, practical and balanced survey of the field to semiconductor devices available.

Язык:

Рубрика: Технология/

Статус предметного указателя: Готов указатель с номерами страниц

ed2k: ed2k stats

Год издания: 1995

Количество страниц: 677

Добавлена в каталог: 04.11.2005

Операции: Положить на полку | Скопировать ссылку для форума | Скопировать ID

Предметный указатель

Donor-type trap      126
Doped-channel heterojunctlon field-effect transistor      205
Doped-channel HFET      205
Doping superlattlce      584
Doppler radar system      88
Double-barrier diode      92
Double-base diode      361
Double-diffused metal-oxide-semiconductor transistor      174
Double-heterojunction bipolar transistor      254
Double-heterojunction FET      203
Double-heterojunction laser      382 387 390
Double-heterostructure optoelectronic switch      157
Double-junction diode      111
Double-velocity avalanche transit-time diode      83
Double-velocity transit-time diode      89
Doubly diffused drain      173
DOVATT diode      83 89
DOVETT diode      89
DRAM      128 174 606
Drift current      637
Drift mobility      579
Drift velocity      548
Dynamic RAM      606
Dynamic scattering      540
Dynode      457
Early effect      249
Early voltage      249
EAROM      608
Eddy current      536 537
Edge-emitting LED      373
EEPROM      162 326 327 334 606 608
effective mass      610 612
Effective Richardson constant      34 51 567
Einstein relation      636
Elastic stiffness      513
Elastic wave      512
Electret      177
Electrically alterable ROM      608
Electrically erasable/programmable ROM      608
Electrically programmable ROM      608
Electro-static discharge      18
Electroabsorption effect      464 465 467 482 483
Electroabsorption modulator      464 465 466 482
Electroluminescence      372 376
Electromagnetic spectrum      644
Electron affinity      454
Electron gas      301 303
Electrooptical effect      482
Element symbols      647
Emission depth      455
Emitter follower      598
Emitter injection efficiency      246
Energy gap      1 610 612
ENFET      520
Enhancement(-mode) device      164 165 179 185 189 195 199 206 209 221 223
Enzyme field-effect transistor      520
Epitaxial silicide      263 264
EPROM      322 326 327 608
Esaki diode      56
Escape depth      453 455
Escape probability      455
ESD      18
Etalon      384 468 471
Excess current      60
Excess noise factor      428
Exciton absorption      470
Exciton binding energy      484
Extrinsic photoconductor      394 395 396 397 398
Fabry-Perot      381 384 467 468 469 470
FAMOS transistor      322 327 334 608
Fast-recovery diode      19
Fat zero      137
FEFET      335
Fermi level      617
Fermi-Dirac function      113
Fermi-Dirac statistics      1 566
Ferroelectncs      335
Ferroelectric field-effect transistor      335
Ferroelectric property      493
FET      6
Fiber-optics communication      379 405 430
Field effect      6 163
Field emission      115
Field-controlled thyristor      366
Field-effect diode      186
Field-effect hot-electron transistor      295
Field-effect transistor      6 235 240
Field-programmable PROM      606
Filamentary transistor      361
fill factor      479 480
Finesse      471
Fixed oxide charge      127
Flash EEPROM      326 327 608
Flash EPROM      608
Flat-band      86 165 444 519
Flat-band, capacitance      125
Flat-band, voltage      122 127
Flat-panel display      176 545 595
Floating-gate avalanche-injection metal-oxide-semiconductor transistor      322
Floating-gate transistor      322
Floating-gate tunnel-oxide transistor      327
FLOTOX transistor      327 334
Fluorescent display      538
Flux quantization      531
FM      590
Fnnging-field drift      137
Focal-plane array      409 414 420 449 451
Forced commutation      339 346
Forward voltage drop      338
Forward-blocking voltage gain      370
Four-layer diode      347
Fowler emission coefficient      412
Fowler-Nordheim tunneling      257 287 327 331 575
Fractional quantum Hall effect      576 581
Frame transfer      138 420
Franz — Keldysh effect      482 483
Free-carrier photoconductor      399
Frenkel — Poole transport      33 1
Frequency modulation      590
Full-wave rectifier      586
Functional device      72 98 275 310 315 321
Fundamental constants      651
Fusible-link ROM      606
GaAs properties      6l2
Gain-enhanced MOSFET      355
Gate-assisted-turn-off thyristor      346
Gate-controlled diode      177
Gate-turn-off switch      346
Gate-turn-off thyristor      339 346
Gated diode      177 520
GATT      346
Gauge factor      505 507
Gaussmeter      498
Gauss’ law      638
Ge properties      612
GEMFET      355
Generation      16 144 552
Generation, current      35 405 556
Geometric correction factor      497
Graded composition      431
Graded-composition barrier      53 303
Graded-index separate-confinement heterojunction laser      390
Gradual-channel approximation      166 180 190
Grain boundary      155
Greek alphabet      650
Gridistor      212
GRIN-SCH laser      390
GTO thyristor      346 353
Guard ring      31 425
Guest-host effect      540

Gummel number      242 247 248
Gummel plot      247
Gunn diode      63
Gunn effect      63 459 551
Gunn mode      68
Half-wave rectifier      586 587
Hall angle      500 578
Hall coefficient      577 581
Hall conductivity      580
Hall effect      496 497 576
Hall factor      497 576
Hall field      576 577 579
Hall generator      496
Hall mobility      579
Hall multiplier      499
Hall plate      496
Hall voltage      497 502 577
HBT      253 277 280
HEMT      197
HET      6
Heterodyne receiver      591
Heteroface solar cell      475
Heterointerface      235 238
Heterojunction bipolar transistor      253
Heterojunction field-effect transistor      197
Heterojunction hot-electron transistor      297
Heterojunction insulated-gate field-effect transistor      205
Heterojunction laser      390
Heterojunction solar cell      475
Heterojunction THETA      257 260
Heterojunction, anisotype      19
Heterostructure superlattice      584
Heterostructure TETRAN      285
Hexagonal field-effect transistor      174
HEXFET      174
HFET      197
HIGFET      205
High-electron-mobility transistor      197
High-speed device      9
high-temperature superconductor      529
Holding current      344
Holography      389
Hook-collector      337
Hooke’s law      507
Hot carrier      551
Hot electron      291 323
Hot-carrier diode      30
Hot-electron bolometer      399
Hot-electron diode      30
Hot-electron injection      608
Hot-electron photoconductor      399
Hot-electron spectrometer      295 297
Hot-electron spectroscopy      300
Hot-electron transistor      6 253 256 263 268 291
Ideality factor      34 45 46 479
IDT      511
Igbt      355 356
IGFET      163 176 177 179 186 335 355
IGR      355
Image charge      569
Impact ionization      16 19 426 559
Impact-ionization-avalanche transit-time diode      74
IMPATT diode      71 74 84 88 89 592
IMPATT diode, double-drift      78
Impurity diffusion coefficient      626
Impurity level      628
Impurity scattering      225 235 549 550
Index of refraction      485
Induced-base transistor      297 301
inductor      535
Injection efficiency      146 341
injection laser      382
Injector FET      355
Insulated-gate bipolar transistor      355
Insulated-gate FET      355
Insulated-gate field-effect transistor      163
Insulated-gate rectifier      355
Insulated-gate transistor      355
Insulator      1 613
Integrator      1 30
Interface charge      127
Interface trap      126 127 171
Interface trap, acceptor-type      126
Interface trap, donor-type      126
Interface trapped charge      127
Interference      470
Interference filter      472
Interferometer      468
Interline transfer      138 420
Internal photoemission      409 410 412 414
International system of units      648
Intrinsic concentration      617
Intrinsic photoconductor      394 395 396 397 398
Inversion-base bipolar transistor      284
Inverted heterojunction field-effect transistor      203
Inverted HFET      203
Inverted MODFET      203
ion implantation      13 623 624 625
Ion-controlled diode      520
Ion-sensitive field-effect transistor      517
Ionization      407
Ionization, coefficient      425 427 431 559
Ionization, energy      407
ISFET      517
Isotype heterojunction      48
JFET      4 6 107 179 188 189 195 214 361 437 438
Josephson effect      531
Josephson effect, AC      532
Josephson effect, DC      532
Josephson junction      529 531
Junction breakdown      248
Junction field-effect transistor      179
Junction laser      382
Junction transistor      240
Junction-gate FET      179
Kerr effect      469
Kramers — Kronig relationship      470
Landau level      400 580 581
Large-optical-cavity laser      390
LASCR      349
Laser      18 157 379 381 382 430 485 599
Laser diode      382
Laser,       392
Laser, buned-heterojunction      390
Laser, channeled-substrate planar      390
Laser, cleaved-coupled-cavity      392
Laser, DH      387 390
Laser, distributed-Bragg-reflector      393
Laser, distributed-feedback      392
Laser, double-heterojunction      382 387 390
Laser, graded-index separate-confinement heterojunction      390
Laser, GRIN-SCH      390
Laser, heterojunction      390
Laser, injection      382
Laser, junction      382
Laser, large-optical-cavity      390
Laser, LOC      390
Laser, multiple-quantum-well      391
Laser, quantum-well      390 393
Laser, SCH      390
Laser, separate-confinement heterojunction      390
Laser, single-heterojunction      390
Laser, stripe-geometry      384 390
Laser, superlattice      392
Laser, transverse-junction stripe      384
Laser, VCSEL      393
Laser, vertical-cavity surface-emitting      393
Lasistor      157
Latch-up      173
Lateral insulated-gate transistor      356

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