Rossnagel S.M., Cuomo J.J., Westwood W.D. — Handbook of plasma processing technology. Fundamentals, etching, deposition, and surface interaction :: Электронная библиотека попечительского совета мехмата МГУ

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Rossnagel S.M., Cuomo J.J., Westwood W.D. — Handbook of plasma processing technology. Fundamentals, etching, deposition, and surface interaction

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Название: Handbook of plasma processing technology. Fundamentals, etching, deposition, and surface interaction

Авторы: Rossnagel S.M., Cuomo J.J., Westwood W.D.

Аннотация:

This is a comprehensive overview of the technology of plasma-based processing, written by an outstanding group of 29 contributors.

Язык:

Рубрика: Технология/

Статус предметного указателя: Готов указатель с номерами страниц

ed2k: ed2k stats

Год издания: 1990

Количество страниц: 523

Добавлена в каталог: 21.10.2005

Операции: Положить на полку | Скопировать ссылку для форума | Скопировать ID

Предметный указатель

plasma      14
Plasma chemistry      206
Plasma enhanced CVD      260
Plasma enhanced reaction      268
Plasma etching      11
Plasma frequency      23
Plasma heating mechanisms      289
Plasma jet      421
Plasma potential      53 59 263
Plasma-source reactions      375
Plasma-substrate reactions      376
Plasma-volume reactions      375
Point defect accumulation      128
Poisson's Eqn      21
Polycrystalline silicon      273
Polymer deposition      321
Polymerization      207 319
Positive column      52 57
Post-RlE corrosion      217
Power balance      41
Power dissipation      248
Power measurement      155
Power splitting rf drive      150
Preferential sputtering      91 100
Processing steps      2
Pulsed arc sources      431
Racetrack magnetron      161
radiative recombination      34
Reaction kinetics      237
Reaction steps      196 266
Reactive arc effects      424
Reactive deposition      371 503
Reactive evaporation      372
Reactive ICB      365
Reactive ion beams      185
Reactive ion etching      196
Reactive sputtering      9 153 233
Reactive sputtering models      237
Reactor materials      221
Reactors      221
Recrystallization      346
Redeposition probability      173
Redistribution      97
Reflectance      225
Reflected energetic neutrals      342
Reflection      76
Refractory metals      277
Relative arrival rates      179
Remote PECVD      387
Remote PECVD parameters      393
Resputter fraction      489
Resputtering      9
Retrograde motion      422
rf bias      302
rf breakdown      50 141
rf current measurement      156
rf deposition system      146
Rf diode      140
rf discharge      141
rf discharge modeling      65
rf driven electrodes      61
rf glows      58
rf leakage      157
rf matching network      146
rf power supply      149
rf self bias      141
rf voltage measurement      157
RIE damage      215
RIE parameters      198
Scaling      314
Secondary electron      53 245
Segregation ratios      118
Selective bias sputter etching      416
Selective deposition      409
Selectivity      320
Self bias      59
Self bombardment      508

Self limiting etch      417
Sheaths      36
Shock zones      457
Si deposition      329
Si etching      326
Sidewall etching      315
Sidewall passivation      203
Silicides      277
Silicon dioxide deposition      398
Silicon dioxide etching      318
Silicon nitride      9 251 400
Silicon oxynitride      273 401
Single mode cavity      297
Single wafer processing      223
Skin depth      44
Space charge effects      362
Space charge limited current      38
Spikes      71
Sputter etch system      147
Sputter ion plating      339
Sputter rates      155
Sputter yield      71 81 413
Sputtered atom emission      86
Sputtered atom energy      177 508
Sputtered atom transport      173 449
sputtering      70
Sputtering wind      164
Step coverage      9 332
Sticking coefficient      412
Stochastic rearrangement      127
Stray capacitance      151
Stress      346
Structure-zone models      484
Subcutaneous oxidation      403
Substrate bias      147
Substrate bias effects      152
Substrate precleaning      469
Surface binding energy      98 361
Surface binding energy, alloys      103
Surface binding energy, oxides      107
Surface cleaning      154
Surface coverage      347 411
Surface damage      363
Surface diffusion      116
Surface reaction layer      208
Surface recovery (RIE)      220
Surface residues      216
Surface roughness      216
Surface scattering      479
Surface topology      484
Surfatron      297
Symmetric discharge      63
Target erosion      244
Thermal spikes      457
Thermal sputtering      96
Thermalization      171
Thermodynamics of evaporation      374
Thin film transistors      273
Thornton-zone model      484
Throwing power      349
Topography      495
Townsend ionization      47
Trench etching      328
Tri-electrode discharge      145
Tri-electrode hollow cathode      317
TRIM      72
Tuned substrate bias      150
Turbulence      246
Unbalanced magnetron      491
Uniformity      155
Vacuum arcs      419
Vaporization sources      343
Void formation      332
Void fraction      507
Void incorporation      485
Volatility      92 128
Voltage ratios      144
Waveguide applicator      297

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