Rossnagel S.M., Cuomo J.J., Westwood W.D. — Handbook of plasma processing technology. Fundamentals, etching, deposition, and surface interaction :: Электронная библиотека попечительского совета мехмата МГУ

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Rossnagel S.M., Cuomo J.J., Westwood W.D. — Handbook of plasma processing technology. Fundamentals, etching, deposition, and surface interaction

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Название: Handbook of plasma processing technology. Fundamentals, etching, deposition, and surface interaction

Авторы: Rossnagel S.M., Cuomo J.J., Westwood W.D.

Аннотация:

This is a comprehensive overview of the technology of plasma-based processing, written by an outstanding group of 29 contributors.

Язык:

Рубрика: Технология/

Статус предметного указателя: Готов указатель с номерами страниц

ed2k: ed2k stats

Год издания: 1990

Количество страниц: 523

Добавлена в каталог: 21.10.2005

Операции: Положить на полку | Скопировать ссылку для форума | Скопировать ID

Предметный указатель

$E\times B$ drift      26 160
$E\times B$ drift current      166
Abnormal glow      420
Activated reactive evaporation      370
Activation energy      17 267
Adhesion      438
Adiabatic expansion      357
Adiabatic invariants      27
AlCu etching      199
Alloy evaporation      7
Alloy sputtering      7 91
Amorphous Si deposition      395
Angular yield      75 84
Anode      47
Anode sheath      54
Arc coatings      436
Arc control      427
Arc current      424
Arc filtering      429
Arc initiation      426
Arc ionization      419
Arc source design      425
Arc spots      421
Arcing      246
ARE systems      378
Area effects      310
Area ratios      264
Arrhenius plots      275
Arrhenius rate      17
aspect ratios      205
Associative recombination      35
Asymmetric discharge      63
Bias sputtering      409 489
Black silicon      215
Bohm diffusion      170 189
Bohm pre-sheath effects      169
Bombardment effects      341
Bombardment induced, amorphization      128
Bombardment induced, decomposition      96 121
Bombardment induced, mixing      95
Bombardment induced, segregation      93 112
Bombardment-structure relations      455
Broad beam sources      183
Bromine chemistry      200
Bulk binding energy      102
Cascade      70
Cascade sputtering      100
Catcher electrode      147
Cathode      47
Cathode design      148
Cathode poisoning      163
Cathode sheath      52 56
Cathodic arc      421
Cavity applicator      299
Charge exchange      35 54
Chemical binding      92
Chemical sputtering      85
chemical vapor deposition      388
Child — Langmuir law      38
Child's law      168
Chlorine chemistry      200
Circulator      295
Cleanliness      222
Closed drift ion source      189
Cluster beam optics      360
Cluster emission      237
Cluster energy      358
Cluster formation      356
Cluster ionization      358
CMOS      4
Cold cathode plasma, electron beam      379
Collision frequency      30
Collisions      30
Coloumb logarithm      32
Compositional change      100
Compound evaporation      373
Confined hollow cathodes      312
Conical magnetron      161
Contact hole etching      324
Continuous arc sources      431
Continuum model      55
Critical density      304
Crystallographic orientation      347
Cubic boron nitride      380
CVD reactions      390
Cyclotron frequency      25 286
Cylindrical magnetron      161
dc breakdown      47
dc glow discharge      51
Debye length      21
Debye shielding      20
Debye sphere      22
Densification      460
density      345 507
Deposition probability      173
Device applications      402
Device processing      323
Diamond films      279
Dielectric films      271
Diffuse arc systems      433
Diffuse arcs      425
Diffusion      36
Diode plasmas      309
Diode sputtering      240
Directional coupler      295
Discharge current      169
Discharges      14
Dished grids      186
Dislocation loop density      461
Dissociative attachment      35
Dissociative ionization      35
Doping effects on etching      202
Downstream plasma      20
Drift velocity      40
Drop-in cathode      149
Dual ion beam sputtering      467 474
Dual power supply      145
ECR      20 29
ECR deposition      298
ECR etching      298
ECR plasmas      285
ECR regions      292
Effective collision frequency      43
Effective ionization potential      49
Elastic collisions      31
Electrical models      143
Electron capture      35
Electron density      16
Electron heating      39
Electron mirror      311
Electron mobility      40
Electron multiplication      48
Electron saturation      60
Electron temperature      16 166
Electron volt      15
Electron-electron collisions      32
Electron-neutral collisions      31
Electronic excitation      33
Electronic properties, a-Si      401
Electrostatic arc confinement      427
End-Hall source      190
Endpoint detection      225
Energetic neutral detection      178
Energetic neutrals      449
Energetic, reflected neutrals      176
Energy coupling      286
Energy distribution of sputtered atom      86
Energy reflection      76
Enhanced surface mobility      342 364
Environmental film stability      478

Epitaxial silicon      274
Epitaxial temperature      364
Equilibrium rearrangement      128
Equilibrium segregation      111
Equivalent circuit      294
Etch directionality      200
Etch selectivity      211
Etch uniformity      322
Etching damage      325
evaporation      373
Extraction voltage      185
Faraday dark space      52
Feedback control      253
Film adhesion      344
Film density      456
Film microstructure      483
Film property changes      494
Film stress      272 452 492
Flow effects      235
Fluorine chemistry      200
Fractal      73
Fractal dimension      73
Fractal film growth      486
Frequency effects      143
GaAS      277
Gas conductivity      165
Gas dispersal rings      394
Gas flow      269
Gas heating      165
Gas incorporation      347
Gas phase nucleation      349
Gas rarefaction      164
Gate oxide breakdown      216
Gettering effects      348
Glow discharge      261
Gradient drift      27
Grain growth      483
Gridded ion sources      184
Gridless ion source      187
Guard confined diode      309
Gyroradius      24
Helmholtz coil      29
High voltage arcs      425
Hollow cathode      311
Hollow cathode arc      380
Hollow cathode discharge      308
Hollow cathode electron source      308
Hot wall PECVD      270
Hydrogen addition      209
Hysterisis curve      234
ICB acceleration voltage      362
ICB nozzles      358
Implantation      216
Impurity atom resputtering      492
In-situ diagnostics      403
Inelastic collision      33 261
Inelastic energy loss      71
Interconnected void network      485
Internal stress      497
Ion assisted deposition      338 411 466
Ion assisted evaporation      460
Ion beam current      185
Ion beam enhanced deposition      338
Ion beam self sputtering      434
Ion beam sputtering      255
Ion bombardment-property relations      451
Ion enhanced etching      200
ion implantation      492
Ion optics      186
Ion plating      338 490
Ion saturation      60
Ion surface interactions      448
Ion-to-atom ratio      506
Ionization      33 53
Ionization, degree      14
Ionized cluster beam      356
Kaufman ion sources      184
Knock-on sputtering      75
L-type matching network      151
Langevin equation      40
Langmuir probe      167
Laser interferometry      225
Lattice damage      216 219
Lattice distortions      453
Loading effect      209
Low pressure plasma      293
Low temperature zone model      488
Macroparticles      422
Magnetic arc confinement      427
Magnetic enhancement      153
Magnetic field      160?
Magnetic field effects on arcs      422
Magnetic field gradient      290
Magnetic mirror ECR      298
magnetic moment      27
Magnetically enhanced deposition      280
Magnetron      162
Magnetron ion etching      224
Magnetron sputtering      160 241
Mass differences      127
Matching network      150
Maxwellian distribution      15 46
Mean free path      30
Metal contamination      216
Metastable ions      392
Metastable state      33
Microstructural control      487
Microwave absorption      290
Microwave load      295
Microwave multipolar films      279
Microwave plasma disk reactor      299
Microwave plasmas      286
Mirror fields      293
Mirror ratio      28
Mobile ion contamination      217
Modeling-sputtering      72
Modified magnetrons      240
Molecular Dynamics      77 455
monitoring systems      252
Morphology      345
Multicusp      301
Multimode cavity      297
Multiple ICB      360
Multipole ECR plasma      300
Near zone      44
Negative deposition      410
Negative glow      52-56
Negative ion emission      238
Negative ions      176
Nitrides      5
Noble gas addition      209
Normal glow      420
Normal mode      23
Nucleation density      347 363
Numerical modeling      53 228
Optical coatings      476
Optical emission spectroscopy      174 225
Orbits      23
oscillations      23
Oxide sputtering      91
Oxygen addition      206
Paschen curve      50
patterning      154
PECVD      9
PECVD systems      269
Penning effects      34
Phase shifts      45
Planar magnetron      161
Planar reactor      18
Planarization      2 496

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