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| Авторизация |
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| Bube R.H. — Photoconductivity of Solids |
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| Предметный указатель |
Piezoresistance, pn junction 78 79 357 377 378
Piezoresistance, pnp junction 79
Polarization, electric 8 9 77 125
Polarized light effects 242—246
Powder preparations, firing 91
Powder preparations, firing, hydrothermal 93
Preparation techniques, summary of 89—91
Pressure dependence of band gap 238—242
Primary photoconductivity 7 8 76 77
Primary photoconductivity, nonuniform illumination 85—87
Primary photoconductivity, pn junction 79
Print-out effect 266
Propagation space, reduced 29
Propagation vector 27
Quantum efficiency 7
Quantum gain 7
Quantum nature of photoconductivity 2
Quenching phenomena 131 155
Recombination centers 46 274
Recombination kinetics, bimolecular 64
Recombination kinetics, bimolecular without trapping 63
Recombination kinetics, bimolecular, summary of simple cases 277
Recombination processes 303—324
Recombination processes, Auger 304 323 324
Recombination processes, direct 304 318—322
Recombination processes, impact 304 323 324
Recombination processes, imperfection 304 305—318
Recombination processes, phonon emission 304
Recombination processes, photon emission 304 318—322
Recombination processes, surface 387 390—394
Recombination transitions 42 46 223 231
Rectification 111
Reflectivity spectra, diffuse 163 230
Relaxation time, dielectric 86 127 333 334
Retrapping 278 283 284 292—299
Saturation of photoconductivity 76
Scattering of free carriers 255—259
Scattering of free carriers, charged imperfection 258
Scattering of free carriers, mechanisms 256—259
Scattering of free carriers, mechanisms, neutral impurity 259
Scattering of free carriers, mechanisms, nonpolar 256
Scattering of free carriers, mechanisms, polar 256
Scattering of free carriers, mechanisms, vibrational 257
Schroedinger equation 20 21 24
Schubweg 330
Secondary photoconductivity 7 9 77
Secondary photoconductivity, nonuniform illumination 85—87
Secondary photoconductivity, npn junction 79 80
Segregation coefficient 106
| Self-activated ZnS 167
Sensitivity, gain 60
Sensitivity, gain, noise-equivalent-power 59
Sensitivity, gain, photosensitivity 59
Sensitivity, gain, specific 59
Sensitization by defects 188
Sensitization by impurities 161 171—174 178 364—367
Shockley — Read recombination model 306—312
Shockley — Read recombination model, extensions of 314 315
Solid solutions 250—254
Space-charge layer 115 390
Space-charge-limited currents 84 120—128 132 276 292
Spectral response 130
Spectral response, dependence on wavelength 391—394
Spectral response, impurities in Ge and Si 140—155
Speed of response (see also “Decay time” “Growth
Spin-orbit interaction energy 199
Stacking faults 383 417 418
Stoichiometry, deviations from 172 178—196
Storage effect 93
Super linearity 155 174 342—348
Surface conductivity, effect of gas adsorption 397 398
Surface photoeffects 390—402 410 413
Surface potential 399—402
Surface recombination velocity 387 388 392—394 400 401
Surface states 39 40 111 114
Temperature dependence of band gap 237—240
Thermal quenching 174 344—348 395 396
Thermally stimulated trap emptying 131 275 292—299
Thermionic emission 193
Thermoelectric power 177 210 211 415
Trapping 273—302
Trapping centers 46 193 274 299—302
Trapping transitions 42 45 46
Trapping, detection of 274—276
Trapping, discrete level 280—283
Trapping, effect on photoconductivity 68—74
Trapping, one-carrier model 72
Trapping, photodielectric effect 421—423
Trapping, retrapping 283 284 292—299
Two-center model 338—342
Undershoot phenomena 290 291
Uses of photoconductors 427—433
Valence band 31
Vibrations, crystal 211 217—219 257
Vidicon 96 127 430 431
Virtual cathode 120
Wave vector 27
work function 15 111
Xerography 429 430
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