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| Àâòîðèçàöèÿ |
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| Ïîèñê ïî óêàçàòåëÿì |
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| Bube R.H. — Photoconductivity of Solids |
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| Ïðåäìåòíûé óêàçàòåëü |
Absorption of oxygen, chemical 195
Absorption spectra 43 131 231
Absorption spectra, compensated acceptors in II — VI compounds 163
Absorption spectra, crystal vibrations 217—219
Absorption spectra, excitation-induced 354—356
Absorption spectra, excited states of impurities in Si 141—145
Absorption spectra, exciton 226—228
Absorption spectra, free-carrier 210 211 215—217
Absorption spectra, infrared 199 210 211
Absorption transitions 42—45 211—228
Acceptor imperfections 42
Acceptor imperfections, characteristic ionization energies in II — VI compounds 169—171
Acceptor imperfections, compensated, and sensitivity 161 162 171—174
Acceptor imperfections, levels in II — VI compounds 162—171
Allochromatic (imperfection) photoconductivity 6
Amorphous materials 10 420
Amphoteric impurities 147
Amplification factor 333
Atomic battery 382
Attempt-to-escape frequency 50 51 293
Auger recombination 304 323 324
Band gap, controversy in PbS-like compounds 236 237
Band gap, controversy in PbS-like compounds, crystal binding 33 34
Band gap, controversy in PbS-like compounds, dependence on impurity concentration in InSb 247 248
Band gap, controversy in PbS-like compounds, determination of 229—235
Band gap, controversy in PbS-like compounds, grouping of compounds according to 232 235
Band gap, controversy in PbS-like compounds, pressure dependence 238—242
Band gap, controversy in PbS-like compounds, temperature dependence 237—240
Band gap, controversy in PbS-like compounds, values of 233 234
Band structure of Ge and Si 199—201
Barriers 57 357—364 376
Barriers, exhaustion 111
Barriers, interparticle 81 82 92
Barriers, metal-semiconductor 81 111—118
Barriers, modulation of 82 83 358—362
Barriers, surface 111 115
Binding, chemical, band gap 32—38
Binding, chemical, band gap, covalent 12
Binding, chemical, band gap, determination of 12 13
Binding, chemical, band gap, electronegativity 14 15 16
Binding, chemical, band gap, ionic 12
Binding, chemical, band gap, metallic 12
Binding, chemical, band gap, mobility 34—38
Binding, chemical, band gap, semiconducting 15 16
Binding, chemical, band gap, strength of 25 26
Boltzmann distribution 47
Bombardment damage 181
Bombardment-induced conductivity 402—404
Bragg reflection law 27 28
Bridgman — Stockbarger technique 103
Brillouin zones 27 28
Capture cross sections (see “Cross section capture”)
Capture probabilities 304
Capture transitions 42 45 46
chemical potential 47
Conduction band 31
Conductivity type, change of 181—187
Conductivity type, change of with increasing light intensity 156—158
Conductivity type, change of, attending relations 175—178
Conductivity, electric 30 32
Conductivity, electric, dark 130
Conductivity, electric, dependence on impurity ionization energy 159—162
Conductivity, electric, Fermi-level analysis 49—55
Contact potential 399—402 415
Continuity equations 326
Controlled imperfection 187
Controlled valency 183 192
Conversion of radiant energy 380—382
Conwell — Weisskopf relation 258
Cross section, capture 50—55 61 62
Cross section, capture, ratio for sensitizing centers 345
Cross section, capture, temperature dependence 73 314
Cross section, capture, vacancies 62
Crystal counters 402 457
Crystal growth techniques, gradient freezing 104
Crystal growth techniques, gradient freezing, pulling from melt 102 103
Crystal growth techniques, gradient freezing, slow cooling of melt 103—105
Crystal growth techniques, gradient freezing, solution 105
Crystal growth techniques, gradient freezing, tip fusion 103
Crystal growth techniques, gradient freezing, vapor phase 98—101
Crystal growth techniques, gradient freezing, zone melting 105—108
Crystals, nearly perfect 11
Crystals, nearly perfect, perfect 10
Cyclotron resonance 199 204—210
Czochralski technique 102
Damage, bombardment 181
Decay 274 276—292 425
Decay range analysis 330—335
Decay rate, increased 288—290
Decay rate, increased, electric fields 292
Decay rate, increased, purification 302
Decay time 69 71
Decay, transients 290 291
defects 39 129 178—196
Defects formation 179
Defects, alkali halides 179 180
Defects, CdS, CdSe, CdTe 187—192
Defects, Ge, Si 181
Defects, MgO, BaO 193 194
Defects, PbS, PbSe, PbTe 181—187
Defects, ZnO,  ,  194—196
Defects, ZnS 192 193
Demarcation level 65 276 312 335
Demarcation level, steady-state Fermi level 66 67
Dember effect 2 377 384—386 425
Density of states, effective 48 202
Detailed balance equation 51
Diamagnetic splitting of bands 248
Diffusion constant 268
diffusion length 268 423—425
Direct transitions 44 45 212—214
Dislocations 259 315—318
Donors 42
Donors, characteristic ionization energies in II — VI compounds 169—171
Drude — Zener equation 215
Dyes 408 410—416
Edge emission 46 321 322
Effective density of states 48 202
effective mass 29 30
Effective mass, angular dependence 206—208
Effective mass, determination of 204—211 248—250
Effective mass, longitudinal and transverse 199 202
Effective mass, negative 210
Effective mass, negative, scalar 198
Effective mass, negative, tensor 30
Effective mass, negative, values of 209
Electrode contacts 110—128
Electrode contacts, CdS crystals 118—120
Electrode contacts, metal-semiconductor 110—120
Electrode contacts, neutral 85 113 127 332
Electrode contacts, ohmic 113—128
Electrofax 429 430
Electroluminescence 124 321
Electron-voltaic effect 382
Electronegativity 14 15
electrophotography 127 429 430
Emission spectra 131 165 223
Emission spectra, conduction 31
Emission spectra, density of states 46—48
Emission spectra, effective density of states 48 202
Emission spectra, occupation of states 46—49
Emission spectra, real crystals 198—203
Emission spectra, valence 31
energy bands 24
Energy levels, electron in potential well 21
Energy levels, electron in potential well, electrons in nearly perfect crystals 39—42
Energy levels, electron in potential well, electrons in perfect crystals 22—30
Energy levels, electron in potential well, free electron 20
Energy levels, electron in potential well, harmonic oscillator 20
Energy levels, electron in potential well, imperfection 130
| Energy levels, electron in potential well, impurities in Ge and Si 135—158
Energy levels, electron in potential well, impurities in II — VI compounds 158—170
Energy-level schemes for imperfections, CdS 353 371—374
Gain, photoconductivity 7 60
Gain, photoconductivity, homogeneous photoconductors 76 77
Gain, photoconductivity, maximum 126—128 406
Gain, photoconductivity, npn junction 80
Ge surface 399 400
Ge surface, demarcation levels 66 67 312 335 346
Ge surface, doubly charged impurity in Ge 155
Ge surface, Equal-energy surfaces, ellipsoidal 199
Ge surface, equilibrium 53
Ge surface, Excitation spectra 131 164 168—170 230
Ge surface, Excitation transitions 42—45 211—215 219-225
Ge surface, Excitons 38 39 211 223 225—228
Ge surface, Extinction coefficient 235
Ge surface, Extraction, field 375
Ge surface, F centers 5 179 180
Ge surface, Fermi function 47
Ge surface, Fermi level 49—55
Ge surface, Fermi level, analysis of conductivity 49—55
Ge surface, Franck — Condon principle 132 144
Ge surface, Frerichs technique 99
Ge surface, PbS 365 366
Ge surface, quasi 53
Ge surface, spherical 198
Ge surface, steady state 53 312 335
Ge surface, valence bands in Ge and Si 200 201
Ge surface, ZnS 371—374
Glow curves 131 296 300 301
Growth of photoconductivity 274 276—292
Growth of photoconductivity, S-shape 285—287
Growth of photoconductivity, transients 290 291
Hall angle 261
Hall constant 177 260
Hall effect 1 131 210 259—263 363 364
Hall effect, measurement of 263
Hall mobility 264
Hall mobility, relation to microscopic mobility 261 264
Hall potential 260
Historical survey 1
hole 32
Hydrocarbons 408—410
Idiochromatic (intrinsic) photoconductivity 6
II — VI compounds 160 345
Impact recombination 304 323 324
Imperfection photoconductivity, theory of, for semiconductors 132—135
Imperfections, crystal 11 38—42
Imperfections, crystal, effects on photoconductivity 129—132
Imperfections, crystal, recombination at 305—318
Impurity conduction 52 145 146
Impurity incorporation, dependence on atmosphere 189 190
Impurity incorporation, dependence on atmosphere, methods of 108 109
Impurity interaction 145 146
Impurity ionization energies, Ge 136
Impurity ionization energies, Ge, Si 137 144
Impurity ionization energies, Ge, thermal vs. optical 143 144
Index of refraction 235
Indirect transitions 212—215 219—225
Injection 8 124
Injection, induced radiation emission 139
Inversion layer 115
Ionization energies of holes from sensitizing centers 345
Junctions, preparation of 108 109
Klasens — Schoen model 373 374
Kyropoulos technique 102
Lambe — Klick model 373 374
Layer preparations, chemically-deposited 95
Layer preparations, chemically-deposited, electrolysis 95
Layer preparations, chemically-deposited, evaporated 95—97
Layer preparations, chemically-deposited, melted 98
Layer preparations, chemically-deposited, sintered 94 95
Lifetime 57
Lifetime, carrier density 131
Lifetime, excited 58
Lifetime, free 58
Lifetime, majoritv-carrier 59
Lifetime, measurements of 423—425
Lifetime, minority-carrier 58
Lifetime, pair 58
Lifetime, radiative recombination 319
Light amplifiers 431—433
Luminescence 46 321 367—375
Luminescence, centers 370
Luminescence, field modulation 374 375
Luminescence, transitions 370
Magneto-absorption, oscillatory 247—250
Magneto-optic effect 211 247—250
Magnetoresistance 199 203
Mass action, law of 184
Mixed crystals 250—254
Mobility 32 34 35 255—272
Mobility, ambipolar 265
Mobility, anomalies 199
Mobility, conductivity 263
Mobility, drift 263—268
Mobility, effective, barrier 57
Mobility, Hall 264
Mobility, microscopic 263
Mobility, photoconductivity 264 266
Mobility, types of 263 264
Mobility, values of 268—271
Mobility, values of temperature dependence 272
Mobility, “a-c” 267 279
Models of photoconductivity, analysis of a simple model 326—330
Models of photoconductivity, analysis of a simple model, two-center model 338—342
Multiply charged centers 137 406
Multiply charged centers, in Ge 146—158 258 346
Negative photoconductivity 404—406
Noise 59 60 406—408
Noise, black-body radiation 60
Noise, f noise 407
Noise, generation-recombination 407
Noise, Johnson or Nyquist 407 1
Noise, npn junctions 79 80 128 358
noise, signal-to-noise ratio 60 407
Optical quenching 174 348—354
Optically stimulated trap emptying 275 299
Organic photoconductors 408—415
Overshoot phenomena 290 291
Oxygen impurity effects 97 174—178 300 364—367
Paramagnetic susceptibility or resonance 276
Pauli exclusion principle 22
Pellet preparation 98
Phase transformations 417—420
Phonons 38
Phonons, energies in Ge and Si 213 214 222
Phonons, in recombination 304
Photocells 428 429
Photoconductivity performance 73 74
Photoconductivity varying as power of light intensity greater than unity 155 174 342—348
Photoconductivity, mechanism of, in PbS layers 356—367
Photoconductor systems, simple 74—87
Photoconductor systems, simple, homogeneous 75—77
Photoconductor systems, simple, non homogeneous 77—87
Photodielectric effect 2 3 276 420—423
Photoeffect, crystal 3
Photography, electrophotography 127 429 430
Photography, electrophotography, silver halide 415 416
Photomagnetoelectric (PME) effect 3 377 384—390 425
Photomagnetoelectric (PME) effect, longitudinal 390
Photomagnetoelectric (PME) effect, quadratic or transverse 390
Photon 38
Photoresponse 134 (see also “Sensitivity”)
Photosensitivity 130 (see also “Sensitivity”)
Photovoltaic effect 1 357 376—384 415 424 425
Photovoltaic effect, high voltage 382 383 418
Photovoltaic effect, lateral 383 384
Photovoltaic effect, surface 384
piezoresistance 199
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