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Bube R.H. Ч Photoconductivity of Solids
Bube R.H. Ч Photoconductivity of Solids



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Ќазвание: Photoconductivity of Solids

јвтор: Bube R.H.

јннотаци€:

Photoconductivity oj Solids is the first and only book to offer a comprehensive analysis of the photoconductivity of solids. It represents an important addition to the
literature since photoconductivity is n.ot only a phenomenon of great interest in its own right, but also a basic tool in a 11 solid-state research. The hebook provides a unified physical description and interpretation of photoconductivity phenomena, drawing examples from many different kinds of materials. In. addition, the correlation bet,veen photo-
conductivity and other related phenomena iIl.insulators and seniconductors is given.


язык: en

–убрика: ‘изика/

—татус предметного указател€: √отов указатель с номерами страниц

ed2k: ed2k stats

»здание: 1st edition

√од издани€: 1960

 оличество страниц: 461

ƒобавлена в каталог: 19.09.2009

ќперации: ѕоложить на полку | —копировать ссылку дл€ форума | —копировать ID
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ѕредметный указатель
Absorption of oxygen, chemical      195
Absorption spectra      43 131 231
Absorption spectra, compensated acceptors in II Ч VI compounds      163
Absorption spectra, crystal vibrations      217Ч219
Absorption spectra, excitation-induced      354Ч356
Absorption spectra, excited states of impurities in Si      141Ч145
Absorption spectra, exciton      226Ч228
Absorption spectra, free-carrier      210 211 215Ч217
Absorption spectra, infrared      199 210 211
Absorption transitions      42Ч45 211Ч228
Acceptor imperfections      42
Acceptor imperfections, characteristic ionization energies in II Ч VI compounds      169Ч171
Acceptor imperfections, compensated, and sensitivity      161 162 171Ч174
Acceptor imperfections, levels in II Ч VI compounds      162Ч171
Allochromatic (imperfection) photoconductivity      6
Amorphous materials      10 420
Amphoteric impurities      147
Amplification factor      333
Atomic battery      382
Attempt-to-escape frequency      50 51 293
Auger recombination      304 323 324
Band gap, controversy in PbS-like compounds      236 237
Band gap, controversy in PbS-like compounds, crystal binding      33 34
Band gap, controversy in PbS-like compounds, dependence on impurity concentration in InSb      247 248
Band gap, controversy in PbS-like compounds, determination of      229Ч235
Band gap, controversy in PbS-like compounds, grouping of compounds according to      232 235
Band gap, controversy in PbS-like compounds, pressure dependence      238Ч242
Band gap, controversy in PbS-like compounds, temperature dependence      237Ч240
Band gap, controversy in PbS-like compounds, values of      233 234
Band structure of Ge and Si      199Ч201
Barriers      57 357Ч364 376
Barriers, exhaustion      111
Barriers, interparticle      81 82 92
Barriers, metal-semiconductor      81 111Ч118
Barriers, modulation of      82 83 358Ч362
Barriers, surface      111 115
Binding, chemical, band gap      32Ч38
Binding, chemical, band gap, covalent      12
Binding, chemical, band gap, determination of      12 13
Binding, chemical, band gap, electronegativity      14 15 16
Binding, chemical, band gap, ionic      12
Binding, chemical, band gap, metallic      12
Binding, chemical, band gap, mobility      34Ч38
Binding, chemical, band gap, semiconducting      15 16
Binding, chemical, band gap, strength of      25 26
Boltzmann distribution      47
Bombardment damage      181
Bombardment-induced conductivity      402Ч404
Bragg reflection law      27 28
Bridgman Ч Stockbarger technique      103
Brillouin zones      27 28
Capture cross sections      (see УCross section captureФ)
Capture probabilities      304
Capture transitions      42 45 46
chemical potential      47
Conduction band      31
Conductivity type, change of      181Ч187
Conductivity type, change of with increasing light intensity      156Ч158
Conductivity type, change of, attending relations      175Ч178
Conductivity, electric      30 32
Conductivity, electric, dark      130
Conductivity, electric, dependence on impurity ionization energy      159Ч162
Conductivity, electric, Fermi-level analysis      49Ч55
Contact potential      399Ч402 415
Continuity equations      326
Controlled imperfection      187
Controlled valency      183 192
Conversion of radiant energy      380Ч382
Conwell Ч Weisskopf relation      258
Cross section, capture      50Ч55 61 62
Cross section, capture, ratio for sensitizing centers      345
Cross section, capture, temperature dependence      73 314
Cross section, capture, vacancies      62
Crystal counters      402 457
Crystal growth techniques, gradient freezing      104
Crystal growth techniques, gradient freezing, pulling from melt      102 103
Crystal growth techniques, gradient freezing, slow cooling of melt      103Ч105
Crystal growth techniques, gradient freezing, solution      105
Crystal growth techniques, gradient freezing, tip fusion      103
Crystal growth techniques, gradient freezing, vapor phase      98Ч101
Crystal growth techniques, gradient freezing, zone melting      105Ч108
Crystals, nearly perfect      11
Crystals, nearly perfect, perfect      10
Cyclotron resonance      199 204Ч210
Czochralski technique      102
Damage, bombardment      181
Decay      274 276Ч292 425
Decay range analysis      330Ч335
Decay rate, increased      288Ч290
Decay rate, increased, electric fields      292
Decay rate, increased, purification      302
Decay time      69 71
Decay, transients      290 291
defects      39 129 178Ч196
Defects formation      179
Defects, alkali halides      179 180
Defects, CdS, CdSe, CdTe      187Ч192
Defects, Ge, Si      181
Defects, MgO, BaO      193 194
Defects, PbS, PbSe, PbTe      181Ч187
Defects, ZnO, $In_{2}O_{3}$, $Cu_{2}O$      194Ч196
Defects, ZnS      192 193
Demarcation level      65 276 312 335
Demarcation level, steady-state Fermi level      66 67
Dember effect      2 377 384Ч386 425
Density of states, effective      48 202
Detailed balance equation      51
Diamagnetic splitting of bands      248
Diffusion constant      268
diffusion length      268 423Ч425
Direct transitions      44 45 212Ч214
Dislocations      259 315Ч318
Donors      42
Donors, characteristic ionization energies in II Ч VI compounds      169Ч171
Drude Ч Zener equation      215
Dyes      408 410Ч416
Edge emission      46 321 322
Effective density of states      48 202
effective mass      29 30
Effective mass, angular dependence      206Ч208
Effective mass, determination of      204Ч211 248Ч250
Effective mass, longitudinal and transverse      199 202
Effective mass, negative      210
Effective mass, negative, scalar      198
Effective mass, negative, tensor      30
Effective mass, negative, values of      209
Electrode contacts      110Ч128
Electrode contacts, CdS crystals      118Ч120
Electrode contacts, metal-semiconductor      110Ч120
Electrode contacts, neutral      85 113 127 332
Electrode contacts, ohmic      113Ч128
Electrofax      429 430
Electroluminescence      124 321
Electron-voltaic effect      382
Electronegativity      14 15
electrophotography      127 429 430
Emission spectra      131 165 223
Emission spectra, conduction      31
Emission spectra, density of states      46Ч48
Emission spectra, effective density of states      48 202
Emission spectra, occupation of states      46Ч49
Emission spectra, real crystals      198Ч203
Emission spectra, valence      31
energy bands      24
Energy levels, electron in potential well      21
Energy levels, electron in potential well, electrons in nearly perfect crystals      39Ч42
Energy levels, electron in potential well, electrons in perfect crystals      22Ч30
Energy levels, electron in potential well, free electron      20
Energy levels, electron in potential well, harmonic oscillator      20
Energy levels, electron in potential well, imperfection      130
Energy levels, electron in potential well, impurities in Ge and Si      135Ч158
Energy levels, electron in potential well, impurities in II Ч VI compounds      158Ч170
Energy-level schemes for imperfections, CdS      353 371Ч374
Gain, photoconductivity      7 60
Gain, photoconductivity, homogeneous photoconductors      76 77
Gain, photoconductivity, maximum      126Ч128 406
Gain, photoconductivity, npn junction      80
Ge surface      399 400
Ge surface, demarcation levels      66 67 312 335 346
Ge surface, doubly charged impurity in Ge      155
Ge surface, Equal-energy surfaces, ellipsoidal      199
Ge surface, equilibrium      53
Ge surface, Excitation spectra      131 164 168Ч170 230
Ge surface, Excitation transitions      42Ч45 211Ч215 219-225
Ge surface, Excitons      38 39 211 223 225Ч228
Ge surface, Extinction coefficient      235
Ge surface, Extraction, field      375
Ge surface, F centers      5 179 180
Ge surface, Fermi function      47
Ge surface, Fermi level      49Ч55
Ge surface, Fermi level, analysis of conductivity      49Ч55
Ge surface, Franck Ч Condon principle      132 144
Ge surface, Frerichs technique      99
Ge surface, PbS      365 366
Ge surface, quasi      53
Ge surface, spherical      198
Ge surface, steady state      53 312 335
Ge surface, valence bands in Ge and Si      200 201
Ge surface, ZnS      371Ч374
Glow curves      131 296 300 301
Growth of photoconductivity      274 276Ч292
Growth of photoconductivity, S-shape      285Ч287
Growth of photoconductivity, transients      290 291
Hall angle      261
Hall constant      177 260
Hall effect      1 131 210 259Ч263 363 364
Hall effect, measurement of      263
Hall mobility      264
Hall mobility, relation to microscopic mobility      261 264
Hall potential      260
Historical survey      1
hole      32
Hydrocarbons      408Ч410
Idiochromatic (intrinsic) photoconductivity      6
II Ч VI compounds      160 345
Impact recombination      304 323 324
Imperfection photoconductivity, theory of, for semiconductors      132Ч135
Imperfections, crystal      11 38Ч42
Imperfections, crystal, effects on photoconductivity      129Ч132
Imperfections, crystal, recombination at      305Ч318
Impurity conduction      52 145 146
Impurity incorporation, dependence on atmosphere      189 190
Impurity incorporation, dependence on atmosphere, methods of      108 109
Impurity interaction      145 146
Impurity ionization energies, Ge      136
Impurity ionization energies, Ge, Si      137 144
Impurity ionization energies, Ge, thermal vs. optical      143 144
Index of refraction      235
Indirect transitions      212Ч215 219Ч225
Injection      8 124
Injection, induced radiation emission      139
Inversion layer      115
Ionization energies of holes from sensitizing centers      345
Junctions, preparation of      108 109
Klasens Ч Schoen model      373 374
Kyropoulos technique      102
Lambe Ч Klick model      373 374
Layer preparations, chemically-deposited      95
Layer preparations, chemically-deposited, electrolysis      95
Layer preparations, chemically-deposited, evaporated      95Ч97
Layer preparations, chemically-deposited, melted      98
Layer preparations, chemically-deposited, sintered      94 95
Lifetime      57
Lifetime, carrier density      131
Lifetime, excited      58
Lifetime, free      58
Lifetime, majoritv-carrier      59
Lifetime, measurements of      423Ч425
Lifetime, minority-carrier      58
Lifetime, pair      58
Lifetime, radiative recombination      319
Light amplifiers      431Ч433
Luminescence      46 321 367Ч375
Luminescence, centers      370
Luminescence, field modulation      374 375
Luminescence, transitions      370
Magneto-absorption, oscillatory      247Ч250
Magneto-optic effect      211 247Ч250
Magnetoresistance      199 203
Mass action, law of      184
Mixed crystals      250Ч254
Mobility      32 34 35 255Ч272
Mobility, ambipolar      265
Mobility, anomalies      199
Mobility, conductivity      263
Mobility, drift      263Ч268
Mobility, effective, barrier      57
Mobility, Hall      264
Mobility, microscopic      263
Mobility, photoconductivity      264 266
Mobility, types of      263 264
Mobility, values of      268Ч271
Mobility, values of temperature dependence      272
Mobility, Уa-cФ      267 279
Models of photoconductivity, analysis of a simple model      326Ч330
Models of photoconductivity, analysis of a simple model, two-center model      338Ч342
Multiply charged centers      137 406
Multiply charged centers, in Ge      146Ч158 258 346
Negative photoconductivity      404Ч406
Noise      59 60 406Ч408
Noise, black-body radiation      60
Noise, f noise      407
Noise, generation-recombination      407
Noise, Johnson or Nyquist      407 1
Noise, npn junctions      79 80 128 358
noise, signal-to-noise ratio      60 407
Optical quenching      174 348Ч354
Optically stimulated trap emptying      275 299
Organic photoconductors      408Ч415
Overshoot phenomena      290 291
Oxygen impurity effects      97 174Ч178 300 364Ч367
Paramagnetic susceptibility or resonance      276
Pauli exclusion principle      22
Pellet preparation      98
Phase transformations      417Ч420
Phonons      38
Phonons, energies in Ge and Si      213 214 222
Phonons, in recombination      304
Photocells      428 429
Photoconductivity performance      73 74
Photoconductivity varying as power of light intensity greater than unity      155 174 342Ч348
Photoconductivity, mechanism of, in PbS layers      356Ч367
Photoconductor systems, simple      74Ч87
Photoconductor systems, simple, homogeneous      75Ч77
Photoconductor systems, simple, non homogeneous      77Ч87
Photodielectric effect      2 3 276 420Ч423
Photoeffect, crystal      3
Photography, electrophotography      127 429 430
Photography, electrophotography, silver halide      415 416
Photomagnetoelectric (PME) effect      3 377 384Ч390 425
Photomagnetoelectric (PME) effect, longitudinal      390
Photomagnetoelectric (PME) effect, quadratic or transverse      390
Photon      38
Photoresponse      134 (see also УSensitivityФ)
Photosensitivity      130 (see also УSensitivityФ)
Photovoltaic effect      1 357 376Ч384 415 424 425
Photovoltaic effect, high voltage      382 383 418
Photovoltaic effect, lateral      383 384
Photovoltaic effect, surface      384
piezoresistance      199
1 2
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