Lieberman M.A., Lichtenberg A.J. — Principles of Plasma Discharges and Materials Processing :: Электронная библиотека попечительского совета мехмата МГУ

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Lieberman M.A., Lichtenberg A.J. — Principles of Plasma Discharges and Materials Processing

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Название: Principles of Plasma Discharges and Materials Processing

Авторы: Lieberman M.A., Lichtenberg A.J.

Аннотация:

"The first edition of Principles of Plasma Discharges and Materials Processing, published over a decade ago, was lauded for its complete treatment of both basic plasma physics and industrial plasma processing, quickly becoming the primary reference for students and professionals." "The Second Edition has been carefully updated and revised to reflect recent developments in the field and to further clarify the presentation of basic principles. Along with in-depth coverage of the fundamentals of plasma physics and chemistry, the authors apply basic theory to plasma discharges, including calculations of plasma parameters and the scaling of plasma parameters with control parameters." With new chapters on dusty plasmas and the kinetic theory of discharges, graduate students and researchers in the field of plasma processing should find this new edition more valuable than ever.

Язык:

Рубрика: Физика/

Статус предметного указателя: Готов указатель с номерами страниц

ed2k: ed2k stats

Год издания: 1994

Количество страниц: 572

Добавлена в каталог: 28.06.2005

Операции: Положить на полку | Скопировать ссылку для форума | Скопировать ID

Предметный указатель

${CF}_{4}$ discharge      488 497ff
${CF}_{4}$ discharge, ${O}_{2}$ and ${H}_{2}$ additions      501—503
${CF}_{4}$ discharge, basic data      497
${CF}_{4}$ discharge, inhibitor film formation      499—501
${CF}_{4}$ discharge, rate constants      498 (figures)
${CF}_{4}$ discharge, silicon dioxide etching      505—506
${CF}_{4}$ discharge, silicon etching      497ff
${CF}_{4}$ discharge, surface kinetics      499—501
${SiH}_{4}$ discharge      515—516
${SiH}_{4}$ discharge, rate constants      516 (tables)
Actinometry      258—260
Adsorption      283—286 292—295
Adsorption, chemisorption      284 292—293
Adsorption, dissociative      284 293
Adsorption, physical      293—294
Adsorption, physisorption      283—284
Affinity, electron      199 224 229—231 492
Ambipolar diffusion      see “Diffusion ambipolar” “Diffusion in
Anodization      514
Argon, collisional energy loss per electron-ion pair      81 (figure)
Argon, cross sections      73 (figure) 78
Argon, discharge model      304ff
Argon, first Townsend coefficient      459 (figure)
Argon, ion-neutral mean free path      80
Argon, probability of collision      65 (figure)
Argon, rate constants      80 (figure)
atom      64ff
Atom, degeneracy      67
Atom, electronic configuration      67
Atom, energy levels      66—71
Atom, fine structure      68
Atom, metastable      70—71
Atom, optical emission from      68—70 256—258
Atom, valence electrons      67
Bohm, criterion      see “Sheath Bohm
Bohm, velocity      158
Bohr radius      66
Boltzmann constant      36
Boltzmann equation      31—32
Boltzmann relation      39—40
Breakdown      see “Dc discharge vacuum
Capacitive discharge      8—19 327ff
Capacitive discharge, asymmetric      368ff
Capacitive discharge, experiments      354—358 377—378
Capacitive discharge, homogeneous model      43 328ff
Capacitive discharge, inhomogeneous model      339ff
Capacitive discharge, magnetically enhanced (MERIE)      19 373ff
Capacitive discharge, matching network      378—382
Capacitive discharge, resonant      338
Capacitive discharge, scaling      349—350 372
Capacitive discharge, secondary electrons      367—368
Capacitive discharge, simulations      358—367
Cathode fall      see “Dc discharge cathode
Cavity perturbation      see “Diagnostics wave”
Charge, bound      29
Charge, free      29
Chemical equilibrium      205ff see
Chemical equilibrium, between phases      210—213
Chemical equilibrium, constant      207—209 249—250 268—269
Chemical equilibrium, heterogeneous      21 Off
Chemical equilibrium, surface coverage      213—215
Chemical equilibrium, vapor pressure      210—213 212
Chemical etching      see “Etching chemical”
Chemical kinetics      265ff see
Chemical kinetics, gas-phase      269ff
Chemical kinetics, surface      288ff 294—296
chemical potential      203—205
Chemical reaction      191—192 205ff see
Chemical reaction, consecutive      270—272
Chemical reaction, elementary      265—267
Chemical reaction, equilibrium      205ff
Chemical reaction, opposing      273
Chemical reaction, rates      246ff 264—269
Chemical reaction, stoichiometric      205ff
Chemical reaction, surface      288ff 294—296
Chemical reaction, three-body      275ff
Chemical reaction, three-body recombination      277—279
Chemical reaction, with photon emission      274—275
Chemical vapor deposition (CVD)      5 512ff
Chemisorption      see “Adsorption”
Child law      see “Sheath Child
Clausius — Clapeyron equation      211
Collision      see also “Collision parameter” “Cross
Collision dynamics      51ff 541ff see
Collision dynamics, adiabatic Massey criterion      235
Collision dynamics, Arrhenius dependence      247—248
Collision dynamics, Boltzmann collision integral      547ff
Collision dynamics, center-of-mass coordinates      51—54
Collision dynamics, differential scattering      48—51
Collision dynamics, Druyvesteyn distribution      552—553
Collision dynamics, energy transfer      54—55
Collision dynamics, Frank — Condon principle      224
Collision dynamics, Krook operator      549—550
Collision dynamics, small angle scattering      55—57
Collision parameter      see also “Cross section”
Collision parameter, cross section      46
Collision parameter, frequency      47
Collision parameter, impact parameter      48
Collision parameter, mean free path      47
Collision parameter, probability      64
Collision parameter, rate constant      47
Collision, associative detachment      239—241
Collision, associative ionization      243 250
Collision, autodetachment      224
Collision, autodissociation      222
Collision, autoionization      222
Collision, charge transfer      73—77 236—238
Collision, coulomb      57—60 543—545
Collision, deexcitation      250
Collision, dissociation      4 225ff
Collision, dissociative electron attachment      229
Collision, dissociative ionization      227
Collision, dissociative recombination      227—228 250
Collision, elastic      45—46 57ff 234 244—245
Collision, electron detachment      233
Collision, electron-ion      57—60
Collision, electron-neutral      33 60—64
Collision, heavy particle      234ff 244
Collision, inelastic      45—46 64ff
Collision, ionization      71—72
Collision, molecular      217ff
Collision, mutual neutralization      see “Collision positive-negative
Collision, Penning ionization      242
Collision, polar dissociation      232
Collision, polarization scattering      60—64 244
Collision, positive-negative ion recombination      238—239
Collision, rearrangement of chemical bonds      243—244
Collision, recombination      238—239
Collision, small angle scattering      55—57
Collision, three-body      245 250
Collision, transfer of excitation      241—243
Collision, vibrational and rotational excitation      233—234
Conductivity, dc plasma      94
Conductivity, plasma      94
Confinement, magnetic      87—88 100 103 140ff
Confinement, multipole      see “Multipole magnetic confinement”
Conservation, energy      36—37 89 304ff 3l5ff 334—338
Conservation, equations      31ff
Conservation, momentum      34—36
Conservation, particles      33 306 309—310 315ff 334
Continuity equation      26—27
Continuity equation, macroscopic      33
Cross section      46 see
Cross section, argon      73 (figure) 78
Cross section, capture      see “Cross section” “Langevin”
Cross section, charge transfer      73—77
Cross section, differential      48—51
Cross section, excitation      72—73
Cross section, gas kinetic      290 (table)
Cross section, hard sphere      50—51

Cross section, ionization      71—72
Cross section, Langevin      62—63 244
Cross section, oxygen      252—253 (figures)
Cross section, Rutherford      545
Cross section, Thompson ionization      71—72
Cross section, total      50
Current, conduction      26—27 106
Current, continuity      26—28
Current, displacement      26—27 106
Current, magnetization      26—27 106
Current, polarization      26—27
Current, total      27 93—96
Cyclotron frequency      86—87
Dc discharge      450ff see
Dc discharge, anode sheath      452
Dc discharge, cathode fall thickness      462 (table)
Dc discharge, cathode fall voltage      462 (table)
Dc discharge, cathode sheath      452 457ff
Dc discharge, diffusion      454—455
Dc discharge, Faraday dark space      452 464
Dc discharge, Paschen curve      459—460
Dc discharge, positive column      451 454ff
Dc discharge, Townsend coefficient      458
Dc discharge, vacuum breakdown      457—460
Debye length      40—42 44
density      see “Electron density” “Neutral
Deposition, chemical vapor (CVD)      512ff
Deposition, of amorphous silicon      515ff
Deposition, of silicon dioxide      518ff
Deposition, of silicon nitride      522
Deposition, plasma-enhanced CVD      see “Plasma-enhanced chemical vapor deposition (PECVD)”
Deposition, reaction rates      516
Deposition, sputter      see “Sputter deposition”
Desorption      283—287 292—295
Desorption, associative      287
Detailed balancing      248ff
Diagnostics      see also “Measurements”
Diagnostics, microwave      120ff
Diagnostics, optical      see “Actinometry” “Optical
Diagnostics, probe      see “Probe diagnostics”
Diagnostics, wave      120ff
dielectric constant      93—94
Dielectric constant, effective      29
Dielectric constant, perpendicular      106
Dielectric constant, tensor      108—110
Diffusion      129ff 551—552
Diffusion, across a magnetic field      140ff
Diffusion, across multipoles      146ff
Diffusion, ambipolar      131—132 143—145
Diffusion, Bohm      145
Diffusion, constant      130 552
Diffusion, Einstein relation      130
Diffusion, Fick's law      130
Diffusion, in electronegative plasmas      312—314
Diffusion, Langmuir regime      139
Diffusion, low pressure      137ff
Diffusion, of neutrals      290—292
Diffusion, random walk      130 152
Diffusion, simulation in electronegative plasma      323—324
Diffusion, solutions      132ff
Diffusion, steady state      134—136
Diffusion, variable mobility model      137—138
Discharge      see also “Capacitive discharge” “Dc “Electron “Helical “Helicon “Inductive “Planar “Surface “Wave-heated
Discharge, electronegative model      312ff
Discharge, electropositive model      304ff
Discharge, high density      19—22 387—388
Discharge, high pressure      8 305
Discharge, hot filament      149 538
Discharge, intermediate pressure      305
Discharge, low pressure      5 304
Discharge, neutral radical density model      486—488
Discharge, nonuniform density model      309—311 318—323
Discharge, typical parameters      21 (table)
Discharge, uniform density model      306—309 315—318
Distribution function      31
Distribution function, Druyvesteyn      552—553
Distribution function, electron      10
Distribution function, electron energy (EEDF)      39 177
Distribution function, electron energy probability (EEPF)      177
Distribution function, Maxwellian      38 548—549
Druyvesteyn distribution      552—553
ECR      see “Electron cyclotron resonance (ECR)”
Electron cyclotron discharge      20 413ff
Electron cyclotron discharge, configurations      413—418
Electron cyclotron discharge, coupling      414—416
Electron cyclotron discharge, electron heating      418ff
Electron cyclotron discharge, magnetic beach      415
Electron cyclotron discharge, measurements      433—434
Electron cyclotron discharge, plasma expansion      429—433
Electron cyclotron discharge, simulations      428
Electron cyclotron discharge, wave absorption      422ff
Electron cyclotron resonance (ECR), 113, 117      see also “Electron cyclotron discharge”
Electron density      33
Electron density, calculation of      308
Electron density, measurement of      see “Probe diagnostics” “Diagnostics wave”
Electron distribution function      see “Distribution function electron”
Electron temperature      37—39
Electron temperature, calculation of      306
Electron temperature, measurement of      see “Probe diagnostics”
Electronegative discharge      312ff
Electronegative discharge, nonuniform model      318—323
Electronegative discharge, simulations      323—325
Electronegative discharge, uniform model      315—318
Electrostatic probes      see “Probe diagnostics”
Emission, Auger electron      282
Emission, optical      see “Optical emission”
Emission, secondary      282—283 283
Energy      192—195
Energy, average kinetic energy lost per particle lost      39
Energy, balance      see “Conservation energy”
Energy, collisional energy loss per electron-ion pair      81
Energy, density      33
Energy, distribution      see “Distribution function”
Energy, electron      see “Distribution function”
Energy, Fermi      280 492—494
Energy, Gibbs free      192 196—197 199ff
Energy, ion bombarding      10 12 16 19 21 306—307 347—349 351 432—433
Enthalpy      192ff
Enthalpy, bond dissociation      199 (table)
Enthalpy, formation of gaseous atoms      200 (table)
Enthalpy, standard molar formation      195—199 (tables)
entropy      199ff
Entropy, standard molar      202
Equation of state, adiabatic      36 99
Equation of state, isothermal      35
Equation of state, perfect gas      35 192
Equilibrium      see “Chemical equilibrium” “Plasma “Thermal
Etching      472ff
Etching, ${O}_{2}$ and ${H}_{2}$ feedstock additions      501—503
Etching, aluminum      507—510
Etching, anisotropy      2 474—477 483 500
Etching, chemical      478—479 490ff
Etching, chemical framework      489—490
Etching, discharge kinetics      485—488
Etching, doping effect      492—494
Etching, for microfabrication      2—4
Etching, gas feedstocks      489
Etching, in ${CF}_{4}$ discharge      497ff
Etching, inhibitor films      215 477 480 489—490
Etching, ion enhanced      6 479—480 494—497
Etching, isotropic      3 474—477
Etching, loading effect      487—488 501
Etching, processes      477—480
Etching, reaction rates      473 498 504
Etching, requirements      473—477
Etching, resist      508ff
Etching, selectivity      3 473—477
Etching, silicon by halogens      4 5 490ff
Etching, silicon dioxide      505—506
Etching, silicon using chlorine      504 (table)

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