Lieberman M.A., Lichtenberg A.J. — Principles of Plasma Discharges and Materials Processing :: Электронная библиотека попечительского совета мехмата МГУ

Главная Ex Libris Книги Журналы Статьи Серии Каталог Wanted Загрузка ХудЛит Справка Поиск по индексам Поиск Форум

Авторизация

Поиск по указателям

Lieberman M.A., Lichtenberg A.J. — Principles of Plasma Discharges and Materials Processing

Обсудите книгу на научном форуме

Нашли опечатку?
Выделите ее мышкой и нажмите Ctrl+Enter

Название: Principles of Plasma Discharges and Materials Processing

Авторы: Lieberman M.A., Lichtenberg A.J.

Аннотация:

"The first edition of Principles of Plasma Discharges and Materials Processing, published over a decade ago, was lauded for its complete treatment of both basic plasma physics and industrial plasma processing, quickly becoming the primary reference for students and professionals." "The Second Edition has been carefully updated and revised to reflect recent developments in the field and to further clarify the presentation of basic principles. Along with in-depth coverage of the fundamentals of plasma physics and chemistry, the authors apply basic theory to plasma discharges, including calculations of plasma parameters and the scaling of plasma parameters with control parameters." With new chapters on dusty plasmas and the kinetic theory of discharges, graduate students and researchers in the field of plasma processing should find this new edition more valuable than ever.

Язык:

Рубрика: Физика/

Статус предметного указателя: Готов указатель с номерами страниц

ed2k: ed2k stats

Год издания: 1994

Количество страниц: 572

Добавлена в каталог: 28.06.2005

Операции: Положить на полку | Скопировать ссылку для форума | Скопировать ID

Предметный указатель

Etching, silicon, nitride      506—507
Etching, sputter      477—478
Etching, surface kinetics      481—485
Etching, trench      1 473—474
Etching, uniformity      4 475—477
Flux, energy flux crossing a surface      39
Flux, magnetic      392 430
Flux, particle flux crossing a surface      39
Fragmentation      287—288
Frequency, collision      47
Frequency, effective collision      354—355 392
Frequency, electron cyclotron      87
Frequency, electron gyration      87
Frequency, electron plasma      92
Frequency, ion cyclotron      87
Frequency, ion gyration      87
Frequency, ion plasma      92
Frequency, lower cutoff      114
Frequency, lower hybrid      116
Frequency, plasma      92
Frequency, upper cutoff      113—114
Frequency, upper hybrid      114
Gas, chemical kinetics      269ff
Gas, chemical potential      203—205
Gas, diffusion in      see “Diffusion”
Gas, discharge      see “Discharge”
Gas, enthalpy of formation of gaseous atoms      200 (table)
Gas, feedstocks for etching      489
Gas, perfect      35 192
Glow discharge      see “Dc discharge”
Guiding center motion      100ff 107
Gyration frequency      see “Cyclotron frequency”
Heat      193ff
Heat, reversible      200
Heating      see “Plasma heating”
Helical resonator discharge      20 21 404ff
Helicon discharge      20—21 434ff
Helicon discharge, absorption      441—443
Helicon discharge, antenna coupling      438—441
Helicon discharge, modes      435—438
High density source      see “Discharge high
Hydrogen, atom      66
Hydrogen, example of      228
Hydrogen, potential energy curves      222 (figure)
Hydrogen, probability of collision      64 (figure)
Inductive discharge      387ff
Inductive discharge, anomalous skin depth      391—392
Inductive discharge, capacitive coupling      394—395
Inductive discharge, experiments      401—404
Inductive discharge, high density      388ff
Inductive discharge, high pressure      398—399
Inductive discharge, low density      396—397
Inductive discharge, low pressure      388ff
Inductive discharge, matching network      395—396
Inductive discharge, planar coil      399ff
Inductive discharge, power absorption      390—392 397—398
Inductive discharge, source configurations      388—390
Interferometer      see “Diagnostics wave”
ion implantation      see “Plasma-immersion ion implantation”
Ionization      see “Collision ionization”
Isotherm, Langmuir      213
Kinetic theory      547ff
Kirchoff current law      see “Current continuity”
Kirchoff voltage law      28
Langmuir probe      see “Probe diagnostics”
Lorentz force law      29 85
Low pressure discharge      see “Discharge low
Macroscopic equations      26 33ff
Macroscopic motion      25
Macroscopic quantities      32ff
Magnetically enhanced reactive ion etcher (MERIE)      19 373ff
Magnetized plasma      see also “Discharge”
Magnetized plasma, dielectric tensor      108ff
Magnetized plasma, diffusion      see “Diffusion across “Diffusion across “Diffusion Bohm”
Magnetized plasma, magnetic field expansion      429—433
Magnetized plasma, particle drifts      see “Particle motion”
Magnetized plasma, resonances      112—120
Magnetized plasma, waves      110ff
Matching network, capacitive discharge      378—382
Matching network, electron cyclotron discharge      414—415
Matching network, helicon discharge      435
Matching network, inductive discharge      395—396
Materials processing      see “Processing”
Maxwell's equations      26
Maxwellian distribution      38 548—549
Maxwellian distribution, averaging over      77ff
Mean free path      see “Collision parameter”
Measurements, if power      382—384
Measurements, neutral density      see “Optical emission”
Measurements, plasma density      see “Probe diagnostics” “Diagnostics wave”
Measurements, potential      see “Probe diagnostics”
Measurements, temperature      see “Probe diagnostics”
Mobility      129—130 551—552
Mobility, variable      137—138
Molecule      218ff
Molecule, electronic state      218
Molecule, example of hydrogen      228
Molecule, metastable      221 232
Molecule, negative ion      224
Molecule, optical emission      221—224
Molecule, potential energy curves      222 (figure) 224
Molecule, vibrational and rotational motion      219—221
Momentum conservation      34—36
Motion      see “Particle motion”
Multipole magnetic confinement      146ff 403—404 416—418
Neutral radical density, calculation of      486—488
Neutral radical density, measurement of      see “Optical emission”
Ohmic heating      96 335—336 344—345 390—392
Optical emission      68—70 221—224 254ff
Oxygen, actinometry      259—260
Oxygen, basic constants      251 (table)
Oxygen, collisional energy loss per electron-ion pair      81 (figure)
Oxygen, cross sections      252—253 (figures)
Oxygen, data set      251—256
Oxygen, discharge model      314ff 486—488
Oxygen, potential energy curves      223 (figure)
Oxygen, rate constants      255—256 (tables)
Oxygen, surface recombination of      521
Particle balance      see “Conservation particles”
Particle motion, $E \time B$ drifts      88—89 142
Particle motion, constant fields      85ff
Particle motion, cyclotron frequency      86
Particle motion, drifts      103—107 142
Particle motion, guiding center      90 100ff 107
Particle motion, magnetic moment      102—103
Particle motion, plasma oscillations      see “Plasma oscillations”
Particle-in-cell simulation      see “Simulation particle-in-cell”
Physisorption      see “Adsorption”
Planar magnetron discharge      465ff
Planar magnetron discharge, characteristics      467
Planar magnetron discharge, model      467—470
Planar magnetron discharge, sheath      469—470
Planar magnetron discharge, sputtering      465—466 470
Planck's constant      65
Plasma admittance      330
Plasma approximation      see “Quasineutrality”
Plasma equilibrium      see also “Thermal equilibrium”
Plasma equilibrium, electronegative      312ff
Plasma equilibrium, electropositive      304ff
Plasma equilibrium, energy balance      see “Conservation energy”
Plasma equilibrium, high pressure      305
Plasma equilibrium, intermediate pressure      305
Plasma equilibrium, low pressure      304
Plasma equilibrium, neutral radical density model      486—488
Plasma equilibrium, nonuniform density model      309—311 318—323
Plasma equilibrium, particle balance      see “Conservation particles”
Plasma equilibrium, uniform density model      306—309 315—318
Plasma frequency      see “Frequency plasma”
Plasma heating      303
Plasma heating, ohmic      see “Ohmic heating”

Plasma heating, secondary electron      360 (figure) 367
Plasma heating, stochastic      see “Stochastic heating”
Plasma heating, wave      see “Wave-heated discharge”
Plasma oscillations      91 ff
Plasma simulation      see “Simulation”
Plasma-enhanced chemical vapor deposition (PECVD)      5 512ff
Plasma-enhanced chemical vapor deposition (PECVD), amorphous silicon      515—518
Plasma-enhanced chemical vapor deposition (PECVD), conformality      519—520
Plasma-enhanced chemical vapor deposition (PECVD), silicon dioxide      518—522
Plasma-enhanced chemical vapor deposition (PECVD), silicon nitride      522
Plasma-immersion ion implantation (PHI)      6 526ff
Plasma-immersion ion implantation (PHI), applications      536—538
Plasma-immersion ion implantation (PHI), sheath models      528—536
Poisson's equation      28
Polarizability      60—61 62
Positive column      see “Dc discharge positive
Potential, chemical      203—205
Potential, definition of      28
Potential, distributed      429—433
Potential, floating      160—161 175 306
Potential, plasma      160—164 174—175
Pressure, gradient      34
Pressure, scalar      34
Pressure, tensor      34
Pressure, units of      23
Pressure, vapor      210—213 212
Probe diagnostics      171ff
Probe diagnostics, collisional effects      185
Probe diagnostics, cylindrical      178—181
Probe diagnostics, double      181—183
Probe diagnostics, emissive      183—184
Probe diagnostics, in time-varying fields      184—185
Probe diagnostics, Langmuir      172
Probe diagnostics, planar      174—175
Probe diagnostics, probe circuit      186—189
Processing      see also “Chemical vapor deposition (CVD)” “Deposition” “Etching” “Plasma-enhanced “Plasma-immersion “Sputter
Processing, applications      1
Processing, batch      19
Processing, materials      1ff
Quantum number      67
Quantum number, principal      65
Quasineutrality      42—43
Radiation, dipole      68—70
Radiation, optical      221 254ff
Radical      9—10 see
Rate constant      77ff 246ff 265ff see
Rate constant, ${CF}_{4}$       498 (tables)
Rate constant, ${SiH}_{4}$       516 (table)
Rate constant, argon      80 (figures)
Rate constant, Arrhenius      80 247—248
Rate constant, oxygen      255—256 (tables)
Rate constant, relation to equilibrium constant      212—213 249—250 268—269
Rate constant, second order      255
Rate constant, third order      256
Reaction      see “Chemical reaction”
Reactive ion etcher      see “Capacitive discharge” “Etching ion
Rf diode      see “Capacitive discharge”
rf magnetron      see “Capacitive discharge magnetically
Secondary emission      282—283 283
Selectivity      see “Etching selectivity”
Sheath      11ff 154ff
Sheath, admittance      330—334
Sheath, Bohm criterion      157ff 166—167
Sheath, capacitance      343—344
Sheath, Child law      164—166 342—343 529—531
Sheath, collisional      170—171 350—352
Sheath, collisionless      156—157 340ff
Sheath, distributed      429—433
Sheath, high voltage      164ff 307—309
Sheath, in electronegative gases      167ff
Sheath, matrix      164 528—529
Sheath, potential at floating wall      160—163 431—433
Sheath, presheath      157 158—160
Sheath, space-charge-limited      see “Sheath Child
Sheath, thickness      161 164—165 171
Silicon deposition      see “Plasma-enhanced chemical vapor deposition (PECVD) amorphous
Silicon etching      see “Etching silicon”
Simulation, hybrid      428—430
Simulation, particle-in-cell (PIC)      11—15 29—30 358—367
Skin depth      390—392 555—558
Sound speed      99
Source      see “Discharge”
Specific heat      36
Specific heat, at constant pressure      197
Specific heat, at constant volume      201
Sputter deposition      465—466 470 522ff
Sputter deposition, film morphology for      523—524
Sputter deposition, reactive      525—527
Sputter deposition, uniformity of      470
sputtering      288 522—523 see “Planar
Sputtering, dependence on angle      478
Sputtering, energy distribution      523
Sputtering, reactive      525—527
Sputtering, role in etching      477—478 495—497 500
Sputtering, yields      289 (table)
Statistical weight      see “Detailed balancing”
Sticking coefficient      286
Stochastic heating      336—337 345—346
Stochastic heating, in inductive discharge      391 555—558
Stochastic heating, in rf magnetron      375—376
Surface kinetics      288ff 295—296
Surface process      82 279ff
Surface process, adsorption      283—286 498—499
Surface process, Auger emission      282
Surface process, desorption      286—287 499
Surface process, positive ion neutralization      279—283
Surface process, reactions      294—296
Surface process, recombination      498—499 521
Surface process, sputtering      see “Sputtering”
Surface wave discharge      443ff
Surface wave discharge, cylindrical      445—446
Surface wave discharge, planar      443—445
Surface wave discharge, power balance      446—447
Temperature      see “Electron temperature”
TEOS discharge      518—521
Thermal equilibrium      7 8
Thermal equilibrium, distribution      38
Thermal equilibrium, properties      37ff
Thermodynamics      191ff
Thermodynamics, first law      193—194
Thermodynamics, properties of substances      196—200
Thermodynamics, second law      199—200
Transformer-coupled plasma (TCP)      see “Inductive discharge”
Transport      see “Diffusion” “Mobility”
Uniformity, etching      see “Etching uniformity”
Uniformity, plasma      see “Plasma uniformity”
Velocity, Alfven      117
Velocity, average speed      39
Velocity, Bohm      158
Velocity, phase      114—115 117—119
Velocity, sound      99
Velocity, thermal      39
Vlasov equation      32
Wave, CMA diagram      117—119
Wave, diagnostics      120ff
Wave, dispersion      98 (figure) 115 118
Wave, electromagnetic      97—98
Wave, electrostatic      98—100
Wave, extraordinary (x)      114 428
Wave, in magnetized plasma      11 Off
Wave, Landau damping      100 441—442
Wave, left hand polarized (LHP)      112—118
Wave, ordinary (o)      114
Wave, principal      112—117 117
Wave, ray dynamics      427
Wave, right hand polarized (RHP)      112—118
Wave, slow      404
Wave, surface      443—446
Wave, tunneling      424 428
Wave, whistler      128 412 427 435

1 2 3

О проекте