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Название: Identification of defects in semiconductors
Автор: Stavola M. (ed.)
This is the second of two volumes on the identification of defects in
semiconductors. The purpose of these volumes is to bring together chapters
by leading researchers on methods used to determine defect properties.
Chapter authors have prepared contributions that explain the fundamentals
of the various measurement techniques and their interpretation at a level
that should enable a reader to understand the current literature. The
application of each technique is also illustrated by several modern examples.
Thus, the many advances in the methods used to study defects in semiconductors
are explained by expert practitioners, and current problems are
discussed from several perspectives. It is hoped that these volumes will be a
valuable reference for anyone who is interested in the characterization of
In Chapter 1, Davies discusses absorption and luminescence spectroscopies
and their application to semiconductor defect studies. The atoms in
a defect can be identified from isotope shifts of the optical transitions.
Additional perturbations, such as uniaxial stress, electric fields, or magnetic
fields, can provide information about defect symmetry. An introduction is
provided to the models commonly used to understand the electronic
transitions of defects and the interaction of the electronic states with the