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Название: Modeling and characterization of RF and microwave power FETs
Авторы: Aaen P.H., Pla J.A., Wood J.
This is a book about the compact modeling of RF power FETs. In it, you will find
descriptions of characterization and measurement techniques, analysis methods,
and the simulator implementation, model verification, and validation procedures
that are needed to produce a transistor model that can be used with confidence by the
circuit designer. Written by semiconductor industry professionals with many years’
device modeling experience inLDMOSand III–V technologies, this is the first book
to address the modeling requirements specific to high-power RF transistors.
A technology-independent approach is described, addressing thermal effects,
scaling issues, nonlinear modeling, and in-package matching networks. These are
illustrated using the current market-leading high-power RF technology, LDMOS, as
well as with III–V power devices. This book is a comprehensive exposition of FET
modeling, and is a must-have resource for seasoned professionals and newgraduates
in the RF and microwave power amplifier design and modeling community.