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| Ïîèñê ïî óêàçàòåëÿì |
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| Grabert H., Devoret M.H. — Single charge tunneling: coulomb blockade phenomena in nanostructures |
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| Ïðåäìåòíûé óêàçàòåëü |
Accuracy pump 131 135
Accuracy transfer 115
Accuracy turnstile 126 133 319
Aharonov — Bohm effect 192 200
Aharonov — Casher effect 297
Array, coupled 238—244 271
Array, one-dimensional 86—91 111 224 238—240 249—272 311 317
Array, two-dimensional 275—303
Back action noise 121
Background charge 264 271 328;
Backscattering 194 198
Bloch oscillation 5 160
Box, single electron 11 110 112 117—122
Breit — Wigner form 184
Buffer 324
Capacitance matrix 88 112 251 283
Charge configuration 111—116 238
Charge soliton 16 249—254 263
Co-tunneling 15 115—117 122 126 131 217—244
Conductance, nonlinear 280
Conductance, Oscillations see “Coulomb blockade oscillations”
Conductance, peak 174 190
Conductance, universal 289
Conductance, zero-bias anomaly 48 59 63 99
Coulomb blockade 4 8 12 42 46 49 55 219 221 226 254 266 269;
Coulomb blockade of Aharonov — Bohm effect 200—207
Coulomb blockade oscillation 85
Coulomb blockade oscillations 167—192
Coulomb gap 24 40 63 74—76 91 227 240 243 253 281
Coulomb gas 279 281 289—292
Coulomb staircase 80 263
Critical charge 12 72 74 89 114
Critical current 142 159—162
Current bias 4—11 24 249
Current mirror quantum 272
Current standard 16 133 261 317—320
Current transformer quantum 240 272
Degeneracy of resonant level 184
Degeneracy spin 172 175 176 178 194 195
Degeneracy valley 172
Design automation 330
Detailed balance 38 73 78 90 210
Device see also “Electrometer” “Pump” “SET “Turnstile”
Device, charge transfer 110—136
Device, molecular electronic 328
Device, single electron 311—330
digital circuits 18 324
Dot see “Quantum dot”
Double junction 13—16 65—86 180 218 221—224 227 230—238
Duality, charge-phase 60
Duality, charge-vortex 288—294
Edge channel 193 194
Edge state 192 194 198
effective mass 172
Electrometer 17 83—86 118—121 320—323
Electrometer sensitivity 16 86 264 321—323
Electrometer working point 120
Electron gas, two-dimensional 167 171
Electrostatic energy of array 88 112 252 277
Environment 5—10 25—55 73—76 91—105 113 144—150 249 268;
Environment high impedance 41 75
Environment low impedance 12 40 73
Environment Ohmic 47
Environment single mode 42 49
Environmental Hamiltonian see “Hamiltonian”
Fabrication technology 329
Fine structure constant 8
Fine structure constant, measurement of 132
Fingerprint 99 105
Frustration, charge 284 303
Frustration, magnetic 303
Global rule 12 24 41 70 114 281
Guiding center 194 196
Hamiltonian, environmental 28
Hamiltonian, tunneling 23 30 57 60 71 231
Impedance 102
Impedance, effective 70 88
Impedance, external 6 25
Impedance, frequency dependence of external 8
Impedance, total 9 26
Infrared radiation receivers 323
Inverter 324
Island charge 11 65 87 111 276
Island charge, effective 66
Island charge, quantum fluctuations of 121
Island, several 15; see also “Pump” “Turnstile” “Array”
Island, single 10; see also “Box” “Double
Josephson junction 5 13 56—65 139—165 219 275 288
| Josephson, isolated 155
Josephson, multi 15 86—91 111—117 224—244 312 318
Josephson, single 4—11 22—65 68 69 268 288
Josephson, voltage biased see “Voltage bias”
Junction, current biased see “Current bias”
Kosterlitz — Thouless — Berezinskii phase transition 279—294
Landau level 192
Landauer formula 180
Local rule 24 42 76 281
Macroscopic quantum tunneling of charge 219 313
Macroscopic quantum tunneling of charge, elastic 220 230—238
Macroscopic quantum tunneling of charge, inelastic 220—230
Master equation 78 96 239 241
Memory cell 313
Metrological application 132 317
Moessbauer effect 46
Network analysis 68 86 89
Norton configuration 68
Offset charge 66 74—76 83—86 130 134 282
Orthodox theory 25 175 278 311—318
Phase diffusion 150 153 162
Phase transition 279 292 301;
Pinch-off 173
Plasma excitation 103
Point contact, quantum 173 185
Poisson process 1 44 96
Pump, single electron 15 127—132
Quantum dot 168 176 185—187 208
Quantum Hall effect 133 192—207
quantum wire 187 190
Quantum wire, disordered 206
Quasiparticle tunneling 13 61 122 141 142 151 282 293 299
Rate see also “Tunneling rate”
Rate for co-tunneling 115 135 223 225 232
RCSJ model 140
Resonant tunneling 169 174 175 178 181 190 191
Resonant tunneling coherent 184
Retrapping current 141 143 145 147
Saclay notation 314
Self correlation 269
Semiconductor nanostructure 167—207 245
Sequential tunneling 218
Sequential tunneling coherent 184
SET oscillation 24 118 254 258 269 318
SET transistor 13—15 18 65 83—86 118 167 263 265—268 320 324
Single electron logic 324
Single electronics 18 110 136 244 284 311—330
Soliton see also “Charge soliton”
Soliton length 252
Soliton, antisoliton 252
Space correlation of tunneling 250 263—264
Spin splitting 190 207
Split-gate technique 168 172
Squid 322
Staircase see “Coulomb staircase”
Subband, one-dimensional 173 194
Sum rule 37 59
Superconductor-insulator transition 289
Swihart wave 103
Thevenin configuration 68
Threshold voltage see “Coulomb gap”
Time correlation of tunneling 249 253 258—263
transistor see “SET transistor”
transmission line 7 51—55 145
Transmission line, LC 53 61
Transmission line, RC 54
Trap 123
Tunnel resistance 2 23 33 119 222
Tunneling Hamiltonian see “Hamiltonian”
Tunneling rate 9 12 31—36 313
Tunneling rate for Cooper pairs 58
Tunneling rate for double junction 72
Tunneling rate for quasiparticles 62
Tunneling rate in multijunction systems 90
Tunneling time 5 97
Turnstile 16 122—127 133 271 319
Variable range hopping 191
Virtual electron diffusion 230
VLSI circuit 326
voltage bias 6 9 22 27 41 113 249
Vortex array 284
Vortex ballistic 301
Vortex mass 294 295
Vortex quantum 294—302
Vortex-antivortex pair 280 286 287
Washboard potential 142
Wigner crystal 170 194 253
XY model 286
Zener tunneling 160
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