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Grabert H., Devoret M.H. — Single charge tunneling: coulomb blockade phenomena in nanostructures
Grabert H., Devoret M.H. — Single charge tunneling: coulomb blockade phenomena in nanostructures



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Íàçâàíèå: Single charge tunneling: coulomb blockade phenomena in nanostructures

Àâòîðû: Grabert H., Devoret M.H.

Àííîòàöèÿ:

Anyone who is doing research on single-electron transistors and other devices employing coulomb blockade and other tunneling phenomena must have/reference this work. Most other books and journal articles on the subject use this book as a base. It is clear, concise, and shows the important derivations.


ßçûê: en

Ðóáðèêà: Ôèçèêà/Ôèçèêà òâ¸ðäîãî òåëà/Ïðèëîæåíèÿ/

Ñòàòóñ ïðåäìåòíîãî óêàçàòåëÿ: Ãîòîâ óêàçàòåëü ñ íîìåðàìè ñòðàíèö

ed2k: ed2k stats

Ãîä èçäàíèÿ: 1992

Êîëè÷åñòâî ñòðàíèö: 335

Äîáàâëåíà â êàòàëîã: 10.09.2005

Îïåðàöèè: Ïîëîæèòü íà ïîëêó | Ñêîïèðîâàòü ññûëêó äëÿ ôîðóìà | Ñêîïèðîâàòü ID
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Ïðåäìåòíûé óêàçàòåëü
Accuracy pump      131 135
Accuracy transfer      115
Accuracy turnstile      126 133 319
Aharonov — Bohm effect      192 200
Aharonov — Casher effect      297
Array, coupled      238—244 271
Array, one-dimensional      86—91 111 224 238—240 249—272 311 317
Array, two-dimensional      275—303
Back action noise      121
Background charge      264 271 328;
Backscattering      194 198
Bloch oscillation      5 160
Box, single electron      11 110 112 117—122
Breit — Wigner form      184
Buffer      324
Capacitance matrix      88 112 251 283
Charge configuration      111—116 238
Charge soliton      16 249—254 263
Co-tunneling      15 115—117 122 126 131 217—244
Conductance, nonlinear      280
Conductance, Oscillations      see “Coulomb blockade oscillations”
Conductance, peak      174 190
Conductance, universal      289
Conductance, zero-bias anomaly      48 59 63 99
Coulomb blockade      4 8 12 42 46 49 55 219 221 226 254 266 269;
Coulomb blockade of Aharonov — Bohm effect      200—207
Coulomb blockade oscillation      85
Coulomb blockade oscillations      167—192
Coulomb gap      24 40 63 74—76 91 227 240 243 253 281
Coulomb gas      279 281 289—292
Coulomb staircase      80 263
Critical charge      12 72 74 89 114
Critical current      142 159—162
Current bias      4—11 24 249
Current mirror quantum      272
Current standard      16 133 261 317—320
Current transformer quantum      240 272
Degeneracy of resonant level      184
Degeneracy spin      172 175 176 178 194 195
Degeneracy valley      172
Design automation      330
Detailed balance      38 73 78 90 210
Device      see also “Electrometer” “Pump” “SET “Turnstile”
Device, charge transfer      110—136
Device, molecular electronic      328
Device, single electron      311—330
digital circuits      18 324
Dot      see “Quantum dot”
Double junction      13—16 65—86 180 218 221—224 227 230—238
Duality, charge-phase      60
Duality, charge-vortex      288—294
Edge channel      193 194
Edge state      192 194 198
effective mass      172
Electrometer      17 83—86 118—121 320—323
Electrometer sensitivity      16 86 264 321—323
Electrometer working point      120
Electron gas, two-dimensional      167 171
Electrostatic energy of array      88 112 252 277
Environment      5—10 25—55 73—76 91—105 113 144—150 249 268;
Environment high impedance      41 75
Environment low impedance      12 40 73
Environment Ohmic      47
Environment single mode      42 49
Environmental Hamiltonian      see “Hamiltonian”
Fabrication technology      329
Fine structure constant      8
Fine structure constant, measurement of      132
Fingerprint      99 105
Frustration, charge      284 303
Frustration, magnetic      303
Global rule      12 24 41 70 114 281
Guiding center      194 196
Hamiltonian, environmental      28
Hamiltonian, tunneling      23 30 57 60 71 231
Impedance      102
Impedance, effective      70 88
Impedance, external      6 25
Impedance, frequency dependence of external      8
Impedance, total      9 26
Infrared radiation receivers      323
Inverter      324
Island charge      11 65 87 111 276
Island charge, effective      66
Island charge, quantum fluctuations of      121
Island, several      15; see also “Pump” “Turnstile” “Array”
Island, single      10; see also “Box” “Double
Josephson junction      5 13 56—65 139—165 219 275 288
Josephson, isolated      155
Josephson, multi      15 86—91 111—117 224—244 312 318
Josephson, single      4—11 22—65 68 69 268 288
Josephson, voltage biased      see “Voltage bias”
Junction, current biased      see “Current bias”
Kosterlitz — Thouless — Berezinskii phase transition      279—294
Landau level      192
Landauer formula      180
Local rule      24 42 76 281
Macroscopic quantum tunneling of charge      219 313
Macroscopic quantum tunneling of charge, elastic      220 230—238
Macroscopic quantum tunneling of charge, inelastic      220—230
Master equation      78 96 239 241
Memory cell      313
Metrological application      132 317
Moessbauer effect      46
Network analysis      68 86 89
Norton configuration      68
Offset charge      66 74—76 83—86 130 134 282
Orthodox theory      25 175 278 311—318
Phase diffusion      150 153 162
Phase transition      279 292 301;
Pinch-off      173
Plasma excitation      103
Point contact, quantum      173 185
Poisson process      1 44 96
Pump, single electron      15 127—132
Quantum dot      168 176 185—187 208
Quantum Hall effect      133 192—207
quantum wire      187 190
Quantum wire, disordered      206
Quasiparticle tunneling      13 61 122 141 142 151 282 293 299
Rate      see also “Tunneling rate”
Rate for co-tunneling      115 135 223 225 232
RCSJ model      140
Resonant tunneling      169 174 175 178 181 190 191
Resonant tunneling coherent      184
Retrapping current      141 143 145 147
Saclay notation      314
Self correlation      269
Semiconductor nanostructure      167—207 245
Sequential tunneling      218
Sequential tunneling coherent      184
SET oscillation      24 118 254 258 269 318
SET transistor      13—15 18 65 83—86 118 167 263 265—268 320 324
Single electron logic      324
Single electronics      18 110 136 244 284 311—330
Soliton      see also “Charge soliton”
Soliton length      252
Soliton, antisoliton      252
Space correlation of tunneling      250 263—264
Spin splitting      190 207
Split-gate technique      168 172
Squid      322
Staircase      see “Coulomb staircase”
Subband, one-dimensional      173 194
Sum rule      37 59
Superconductor-insulator transition      289
Swihart wave      103
Thevenin configuration      68
Threshold voltage      see “Coulomb gap”
Time correlation of tunneling      249 253 258—263
transistor      see “SET transistor”
transmission line      7 51—55 145
Transmission line, LC      53 61
Transmission line, RC      54
Trap      123
Tunnel resistance      2 23 33 119 222
Tunneling Hamiltonian      see “Hamiltonian”
Tunneling rate      9 12 31—36 313
Tunneling rate for Cooper pairs      58
Tunneling rate for double junction      72
Tunneling rate for quasiparticles      62
Tunneling rate in multijunction systems      90
Tunneling time      5 97
Turnstile      16 122—127 133 271 319
Variable range hopping      191
Virtual electron diffusion      230
VLSI circuit      326
voltage bias      6 9 22 27 41 113 249
Vortex array      284
Vortex ballistic      301
Vortex mass      294 295
Vortex quantum      294—302
Vortex-antivortex pair      280 286 287
Washboard potential      142
Wigner crystal      170 194 253
XY model      286
Zener tunneling      160
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