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| Efros A.L. (ed.), Pollak M. (ed.) — Electron-electron interactions in disordered systems |
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| Ïðåäìåòíûé óêàçàòåëü |
Kuritsyn, Y.A. 488 496; E.E.”
Kurkijarvi, J. 649
Kurobe, A. 292 560 604 605 606 610 611; H.”
Kuroda, Y. 211; see “Takagi H.”
Kurosawa, T. 417
Kusztelan, L. 295 296 401; R.”
Kuznetsova, N.N. 461 474; A.I.”
Ladyzhenskii, Y.P. 488 496 501; L.E.” “Gershenzon E.M.”
Lagunova, T.S. 296 394; O.V.”
Lai, S. 242; see “Jain K.”
Laibowitz, R.B. 77 78 117 119; R.
Lakatos, A.I. 456
Lampert, M. 488
Landau, L.D. vii 20 517
Landwehr, G. 126 221; S.”
Langer, J.S. 163 299;
Larkin, A.I. 4 6 9 11 14 15 23 24 44 51 54 57 63 82 83 84 85 86 89 93 103 108 109 110 112 113 133 162 168 172 173 209 250 251 629 630 658; B.L.” “Aslamazov L.G.” “Dzyaloshinskii “Efetov K.B.” “Gor’kov L.P.” “Hikami S.”
Lasjaunias, J.C. 441
Lattice model 302 421
Le Comber, P.G. 455; see “Abkowitz M.”
Lea, M.J. 401 435; H.”
LeCleac’h, X. 445 456
Lee, N.K. 265 266; J.” “Castner T.G.”
Lee, P.A. 14 94 111 122 131 161 173 181 195 249 251 252 350 636 28 29 62 63 74 202 197 206 282 4 38 40 51 63 79 89 93 108 168 172 183 186 187 196 251 278 595 292 344 345 346 353 390 393 397 427 558 611 636 40 111 126 131 224 249 251 252 253 278; E.” “Altshuler B.L.” “Bhatt R.N.” “Davies J.H.” “Fukuyama H.” “Girvin S.M.” “Grest G.S.” “Rosenbaum T.F.”
Leibowitz, R. 117; see “Chaudhari P.”
Levin, E.I. 55 133 443; M.F.”
Licciardello, D.C. 158 4 6 126 133 270 292 296 385 558 559 571 609 661; E.” “Fleishman L.”
Lieb, E.H. 629
Life-time 161 162 173 179 184 216
Lifshitz, E.M. 475 490 532 547 624 646 647 493 20 517; V.B.” “Landau L.D.”
Likhtman, N.P. 532 547; E.M.”
Lin, W. 249 252 254; T.F.”
Lindenfeld, P. 225 251 253 296 435; B.” “Chui T.”
Linear chain conductors 624 625
Little, W.A. 625
Litvak — Gorskaya, L.B. 490 528 529; V.V.” “Gershenzon E.M.”
Local density of states see “density of states local
localization 292 303 319 385 390 404
Localization by phonons 648
Localization center 562 565-566 590
Localization effect on conductivity 250
Localization effect on magnetoconductivity 251-253
Localization in the Peierls state 667
Localization length 166 254 270 563 588 594 604 609
Localization length of  states 604 609
Localized state 563
Long, A.F. viii 445 454
Long-range fluctuations 321 349 395 398
Long-range interactions see “interactions long-range
Low-concentration regime 596
Low-energy excitations 293 343-344 349 382
Lowdin, P.O. 360
Lubovskii, R.B. 634 635 662 667; L.N.”
Lugovaya, G.Y. 528 529; E.M”
Lushnikov, A. A. 476 477 478; V.V.”
Lutskii, V.N. 222; see “Savchenko K.”
Luttinger, J.M. 272; see “Kohn W.”
MacKinnon, A. 161; see “Kramer B.”
Madelung constant 322 336 339
Maekawa, S. 175 177 211 212 222 242 255 256 582 583 608; H.” “Ue H.”
Magnetic field dependence 581-582 592
Magnetic field effects 242-244 251-253 281 282
Magnetic field, dependence of electronic polarizability on 611
magnetic susceptibility 51 103-106 108-111 138
Magnetic tuning of MI transition 281 282
Magnetoconductance see “Magnetoresistance” “Coulomb “Localization
Magnetoresistance 4 11 14 15 63 74-77 86 108 125 128 131 167 191 217
Magnetoresistance in amorphous semiconductors 611
Magnetoresistance in the Anderson localized regime 603 605 609
Magnetoresistance negative 607
Magnetoresistance positive 606
Mahaian, S. 608; see “Wilson J.A.”
Mahanti, S.D. 571 573; T.A.”
Maki, K. 192 209 211; S.”
Maksimenko, V.V. 476 477 478
Mansfield, R. 295 296 401 435; H.”
Many-electron hopping 293-294 312 315 360-384 399-405
Many-electron wave function 302-304 362-368 385 387-388
Markiewicz, R.S. 221 222
Marko, J.R. 256 582 586 580 581 588; P.R.” “Quirt J.D.”
Maschke, K. 300
Masden, J.T. 26 117
Matsubara, T. 559
Matveenko, S.I. 654 655; O.N.”
Matveev, M.N. 115 128 129; A.N.”
Maximally crossed diagram 163
Mayer, J. 328
McChaikin, P. 221 222; W.C.”
McGinnis, W.C. 221 222 223;
McKane, A.J. 161
McLean, W.L. 225 251 253 296 4; B.” “Chui T.”
Mclnnes, J.A. 427; see “Hearn C.J.”
McMillan, W.L. 7 47 126 249 270 133 136 185 187 278 282 398; W.”
Mean field approach 324 327 329 355
Mean free path 159 166 623
Mell, H. 610
Melnikov, V.L 474; see “Gogolin L.”
Mel’nikov, A.P. 488 489 494 495 496 504 505 506 507 531 536 538 542 543 501 488 489 500 501 502 508 509 510 511 528; V.N.” “Gershenzon M.”
Mel’nikov, V.L 624 640 641 642 647 648 649; A.A.”
Merritt, F.R. 255; see “Fletcher R.C.”
Metal-insulator transition 7 47 133-138 291 324 398 557-558 568 577 579-580
Metallic films 221
Metallic model 627
Metallic regime 623 639
Metropolis, N. 346
Meyer, F. 476; see “Perenboom J.A.A.J.”
Mikoshiba, N. 128 130 224 225 248 250 251 253 224; Y.” “Kaiimura K.” “Morita S.”
Miller, A. 297 298 303 319 362 385 414 557 604
Miller, J.S. 634; see “Epstein A.J.”
Milligan, R.F. 292 307 111 126 224 249 251 252 253 254; T.F.”
Milward, R.C. 461 472 473
Minimum metallic conductivity 158 244-247 269 270 279 281-283 558 579
Mironov, O.A. 76 119 121; A.”
Mitchell, A.H. 272; see “Kittel C.”
Mizuguchi, K. 248 265 578 587;
Moberly, L. 265; see “Castner T.G.”
Mobility 171 499
Mobility edge 160 235 245 557 565 587 609 623
Mobility gap 235 269 278
Mobility threshold 27
Mochel, J. 47 185 187 278 398; W.L.”
Mochel, J.M. 126 249 270; B.W.”
Moehlecke, S. 222; see “Ovadyahu Z.”
Mol anov, S.A. 645 646
Momentum relaxation time 496
Mon troll, E.W. 398; see “Scher H.”
Monden, Y. 265; see “Ootuka Y.”
Monte Carlo calculations 294-295 344-346 353 355 393 394 396-399 426-432 434
Morgenstem, I. 393
Morigaki, K. 284; see “Nishida N.”
Morita, S. 128 130 224 225 248 250 251 253
MOS 170 171 200 217 218 219
Moshalkov, V.V. 295 296 400; N.B.”
Mott transition 489
Mott — Hubbard gap see “Hubbard gap
Mott, N.F. 611; see “Kamimura H.” “Street R.A.”
Mott,N.F. vii viii 4 158 235 238 239 244 245 246 251 254 262 269 281 291 292 294 296 297 298 299 302 352 358 360 362 373 374 383 398 399 414 432 439 446 447 448 456 461 462 489 529 544 557 558 559 566 578 585 623 624 637 638 640 295 349 357 445 447 638 653; I.G.” “Jones H.”
Mott’s criterion 236 237 267 269 274
Mott’s variable range hopping law 246 247 294-296 301 321 392 396 399 400 432 603 605 608
Mousty, F. 256 265
Movaghar, B. 610
Mui, K. 225 251 253; T.”
Multi-valley effect 585 589 602
Murase, K. 488 496; E.”
Murzin, V.N. 461 474; L.”
Muto, Y. 211 607 608 610; M.” “Kobayashi N.” “Nishio Y.”
Mycielski, J. 460 461 473; J.”
Myczielski, A. 405
Myczielski, J. 405; see “Myczielski A.”
Nagaoka, Y. 560 14 168 173; S.”
| Narayanamurti, V. 243 244 256 257 259 260 578 595; S.” “Kummer R.B.” “Walstedt R.E.”
Narita, S. 241 242 488 489 497 504 510 530 549 530 546 547 549 503 504 505 506 507 510 523 526 527 530 536; M.” “Sugimoto N.” “Taniguchi M.”
Nasledov, D.N. 296 394 395 401; O.V.”
Natori, A. 488 492 497 529 589 602 604 488 530 547 561; N.”
Neal, T. 163; see “Langer J.S.”
Negative magnetoresistance see “Magnetoresistance negative”
Neuringer, L. J. 461 472 473; R.C.”
Neutral impurity 488
Ngai, K:L. 349 see A.K.”
Nguyen, V.L. 295 296 312 353 354 355 356 359 394 396 397 398 399 434 344 345 399 415 417 418 427 429 430 431 434 479 611 416 458; A.L.” “Kogan Sh.M.”
Nikitin, E.E. 518
Nikulin, E.I. 395 401 434 296 394 395 401; O.V.” “Shlimak I.S.”
Nishida, N. 284
Nishimura, H. 529
Nishio, Y. 610
Nisida, Y. 546 547 549
Non-ergodic behavior 296 316-317 345 352 390-394
Nori-ohmic conduction see “Conductivity non-ohmic”
Norton, P. 488 489 496 501 507 508 510 523 530
Nuclear magnetic resonance 261 584
Occupation probability 321-323
Ogawa, T. 559; see “Yonezawa F.”
Ohkawa, F.J. 214
Ohmic heating 172
Ohyama, T. 488 496; E.”
Okuma, S. 213; see “Kobayashi S.”
One-dimensional 636
Ono, K. 284; see “Nishida N.”
Ono, Y. 166; see “Yoshioka D.”
Onuki, Y. 607
Ootuka, Y. 126 127 128 224 249 250 251 264 265 283 530 177 221 224 248 251 265 122 123 166 221 222; S.” “Komori S.” “Thomas G.A.”
Oppermann, R. 161 187 208
Orbital effect 170 191 194 221
Organic compounds 624 625
Organic compounds, lattice properties 627 633
Organic superconductors 627
Ortu o, M. 295 355 358 359 397 296 390 558 611; M.”
Osaka, Y. 610
Osheroff, D.D. 166; see “Dolan G.J.”
Ostoja, P. 256 265; F.”
Ostrovskii, V.N. 490 491 492; Y.N.”
Otsuka, E. 488 496 281 282; S.”
Ovadyahu, Z. 166 222 48 50 135 136; Y.”
Ovchinnikov, A.A. 629
Ovchinnikov, Yu.N. 57; see “Aslamazov L.G.”
Overhof, H. 300; see “Maschke K.”
Ovshinsky, S.R. 557; see “Cohen M.H.”
Paalanen, M.A. 277 278 279 280 559 579 249 252 254; T.F.” “Thomas A.”
Pair approximation 638 649
Pair breaking parameter 209 211
Pairs 638 649
Paramagnetic centers 634 659
Paramagnetic impurity scattering 173 177 213
Paramagnon 208
Parry, G.S. 608; see “Williams P.M.”
Partition function in a magnetic field 606
Partition function of spin pair systems 592
Passari, L. 256 265; F.”
Pasteur, G. A. 445 446 453 455; J.J.”
Pastur, L. A. 475 624 647; E.M.”
Patton, B.R. 211
Pauli paramagnetic susceptibility 196 573 582
Pearson, G.L. 255; see “Fletcher R.C.”
Peierls, R.E. 631
Pepper, M. viii 219 122 158 219 76 119 122 221 75 76 119 122 123 166 217 219 221; R.A.” “Kaveh. “Long A.F.” “Mott N.F.” “Poole D. “Uren M.J.”
Percolation 300-301 313 324 350 356 371 381-384 604
Percolation, threshold 434
Perelomov, A.M. 491 492 494 515 517; A.I.”
Perel’, V.I. 495 524 528 543; V.N.”
Perenboom, J.A.A.J. 476476
Perry, T. 111 126 224 249 251 252 253; T.F.
Peskacheva, T.B. 461 474; V.S.”
Phase diagram of one-dimensional metal 631
Phillips, W.A. 441 469 470
Phonon drag in one-dimensional metal 630 649
Photoconductivity 488
Photodecay cross-section 493
Photothermal ionization 503
Pike, G.E. 300 301; C.H.”
Pines, D. 629; see “Bardeen J.”
Pitayevskii, L.P. 493; see “Berestetskii V.B.”
Plateau regime 639 653 655
Ploog, K. 435; see “Ebert G.”
Pohl, H.A. 296 405
Pohlman, B. 294 296 318 344 346 390 393 397 427 428 429 442 350; U.” “Gr M.”
Poisson distribution 566 592
Polarizability 324 347 359
Polarization function 186 207 215
Polaron-like excitations 316 352-353 357-358 373-374
Polaronic effects 667
Polarons 437 438
Poliak, F.H. 394 402 295 296 401; J.A.”
Poliak, M. 254 293 294 295 296 297 298 299 300 302 305 308 311 318 321 324 331 334 335 341 347 348 349 352 356 358 359 360 362 363 369 370 373 375 382 312 352 360 374 384 396 400 404 417 383 387 390 393 394 396 397 398 399 401 402 404 405 417 439 445 446 448 457 460 558 570 604 611 638 650 656 397; J.” “Chroboczek J.A.” “Friedman L.R.” “Knotek M.L.” “Ortuno M.” “Pohl H.A.”
Pollit, S. 158; see “Mott N.F.”
Poluyanov, V. A. 513; see “Vetchinkin S.N.”
Polyanskaya, T.A. 75 128; Yu.V.”
Poole, D.A. 76 77 119 122 221
Popova, A.P. 496; see “Blagosklonskaya L.E.”
Positive magnetoresistance see “Magnetoresistance positive”
Pouget, J.P. 634; see “Epstein A.J.”
Prange, R. 192; see “Abrahams E.”
Prigara, F.V. 643 644 645 661 664 654 655; O.N.” “Gor’kov L.P.”
Probability distribution function 567 592
Prober, D.E. 117 118; N.”
Probst, C. 435; see “Ebert G.”
Program for energy minimization 479
Pruiskin, A.M.M. 161; see “Houghton A.”
Pseudo-fermion 216
Ptitsyna, N.G. 522 532 547; M.”
Pylik, A.S. 222; see “Savchenko A.K.”
Quantum correction 161 165
Quantum correlations 312-313 384-390 404
Quasi-particles 319 341 373-374
Quinn, J.J. 250
Quirt, J.D. 256 257 260 582 586 580 581; J.R.”
Rabinovich, R.I. 488 517 488 489 490 496 503 506 507 508 510 511 488 489 494 495 503 504 505 506 507 510 511 513 523 530 531 536 538 542 543; V.N.” “Arendarchuk V.V.” “Gershenzon E.M.” “Goldgur
Rajagopal, A.K. 349
Ramakrishnan, T.V. 4 6 9 23 63 111 122 126 195 249 251 252 253 165 172 217 28 29 62 63 74 126 133 166 202 251 282 558 559 571 609 661; E.” “Anderson P.W.” “Bhatt R.N.” “Lee P. “Rosenbaum T.F.”
Raman spectroscopy 242-244
Ramdas, A.K. 239 602; R.L.” “Fisher P.”
Randell, R.W. 349; see “Rajagopal K.”
Random antiferromagnets 595
Random energy see “Disorder energy”
Random resistance network 298-301 355 371 378-381 605
Rapp,  131
Rashba, E.I. 474 635 667 624 642 647 648 649; A. “Gogolin A.L.”
Raymond, A. 281 282; J.L.”
Redfield, D. 400 435
Regel, A.R. 4 269; A.F.”
Rehr, J.J. 256; see “Holcomb D.F.”
Relaxation 316-317 355-359 404
Relaxation in one dimension 630
Relaxation losses 444
Relaxation losses in amorphous semiconductors 448
Relaxation losses in impurity bands 457
Remenijl, G. see “Dubois H.
Residual entropy due to spins 594
resistivity see “Conductivity”
Resonant absorption 461
Resonant absorption at finite temperature 467
Resonant absorption by small metallic particles 476
Resonant absorption in amorphous semiconductors 462
Resonant absorption in impurity bands 470
Resonant absorption in one-dimensional metals 474
Revex, A. 441; see “Lasjaunias J.C.”
Rice, T.M. 235 239 254 266 281 489 508 512 530 546 547 549 240 257 276 514 529 560 561 559 625 661 256 582 584 587 595 292 294 295 296 318 344 345 346 353 390 393 397 427 558 611 636 238 239 240 241; K.” “Apel W.” “Bhatt R.N.” “Capizzi M.” “Davies J.H.” “Lee P.A.” “Thomas A.”
Riess, I. 254; see “Poliak M.”
Riklund, R. 559; see “Chao K.A.”
Robert, J.L. 281 282
Romestain, R. 260 243 244 256 259 260 578; S.”
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