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Clarke L.J. — Surface crystallography: an introduction to low energy electron diffraction
Clarke L.J. — Surface crystallography: an introduction to low energy electron diffraction



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Íàçâàíèå: Surface crystallography: an introduction to low energy electron diffraction

Àâòîð: Clarke L.J.

ßçûê: en

Ðóáðèêà: Ôèçèêà/Ôèçèêà òâ¸ðäîãî òåëà/Ïðèëîæåíèÿ/

Ñòàòóñ ïðåäìåòíîãî óêàçàòåëÿ: Ãîòîâ óêàçàòåëü ñ íîìåðàìè ñòðàíèö

ed2k: ed2k stats

Ãîä èçäàíèÿ: 1985

Êîëè÷åñòâî ñòðàíèö: 329

Äîáàâëåíà â êàòàëîã: 15.08.2005

Îïåðàöèè: Ïîëîæèòü íà ïîëêó | Ñêîïèðîâàòü ññûëêó äëÿ ôîðóìà | Ñêîïèðîâàòü ID
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Ïðåäìåòíûé óêàçàòåëü
$X\alpha$ potential      124 126
$\alpha$ exchange      see $X\alpha$ potential
$\gamma$-plot      see Wulff construction
Angle-resolved Auger emission spectroscopy (ARAES)      287—289
Angle-resolved ultraviolet photoemission spectroscopy (ARUPS)      91 287—289
Angle-resolved X-ray photoemission spectroscopy (ARXPS)      287—289
Angular distribution of ions produced by electron stimulation (ESDIAD)      300—302
Angular-momentum representation      148
Anisotropic thermal vibrations      198—201
Asymptotic cluster model      see cluster model
Atom scattering      146 297—300
Auger electron spectroscopy (AES)      3 4 43 75 97 108 110 155 283
Band structure      154 156
Beam area      13 96 115
Bloch-wave method      156
Bootstrap acceleration method      167—168
Born approximation      116
Born — Oppenheimer approximation      184
Bound state      139—140 142
Bragg energies (peaks)      182 186—188 193 194—196 214 224—225 258
Bragg — Williams model      236—237
Bravais lattice      see lattice
CAVLEED      146 151 158 170—171 181 246—247
Centred overlayer structures      51—53
Chain method      169—170 285
Change      181 246—247
Channel-plate electron multiplier (channeltron)      94
Charge density waves      234
Cleavage plane      45 47 49
Cluster model      177—179
Coherence length      5 99—100 204 218
Coincidence structures      see incommensurate overlayers
Combined space method (CSM)      31 168—171 174 176 181 186 246—247
Correlation (in thermal vibrations)      178 206—208
Correlation (within disordered surfaces)      180
Coulomb interaction      116—119 123 286
Crystal structures and diffraction patterns      311—312
Crystal structures and diffraction patterns, body-centred cubic (bcc)      33 35
Crystal structures and diffraction patterns, CsCl      46 48
Crystal structures and diffraction patterns, diamond      33 43
Crystal structures and diffraction patterns, face-centred cubic (fee)      33 39 41
Crystal structures and diffraction patterns, hexagonal close-packed (hep)      33 43
Crystal structures and diffraction patterns, NaCl      45—48
Crystal structures and diffraction patterns, simple cubic (sc)      33 35
Crystal structures and diffraction patterns, wurzite      48—49
Crystal structures and diffraction patterns, zinc-blende      48
Current image diffraction (OLD)      303—304
Cylindrical mirror analyser (CMA)      see energy analysers
Darwin term      128
Data averaging (reduction)      1 90 209 239—243 286
Debye temperature      185 190—199 201 204—205 247 266 275
Debye — Waller factor      182 184 188 190 193 201 205—206 236 277 300 311—312
defects      90 182 215—218 226
Deviation (d-) factor      248 261
Diffraction beam labelling      62—64
Diffractometers      91
Diffractometers, flat, transmissive screen      93. see also MEMLEED
Diffractometers, hemispherical, transmissive screen      82 91—93
Diffractometers, high-resolution      97
Diffractometers, magnetic deflection      93.
Diffractometers, standard      74—75
Dirac equation      127
Discrepancy factor      see deviation factor
Disordered surfaces      47 180 237—239 292
domains      13—14 90 99—100 204 230—234 283
Double-diffraction      24 233 see
Dynamical methods      157 209
Electron energy      2
electron guns      73 79—84
Electron stimulated desorption (ESD)      90 93—94 286
Electron wavelength      2
Energy analysers, cylindrical mirror (CMA)      4 283
Energy analysers, cylindrical sector      292
Energy analysers, hemispherical      292
Energy analysers, retarding field (RFA)      4
Energy selection      75
Energy-loss processes      98 100 144
Epitaxial growth      4 22 286 296
Equivalent beam averaging      244—247 254
Evanescent beams      151
Ewald construction (sphere)      8—9 218 220 223 226—221 230
Exact methods      156 162 164 168 247
Extended X-ray absorption fine structure (EXAFS)      178 287 289—291
Fano effect      114
Faraday cup      94 103 107 114 221 301
Fermi energy (level)      2 124—125 143—144 155
Field-ion microscopy (FIM)      302—303
Fourier transform (analysis)      100 115 222 289
Grid (in electron gun)      155
Grids (optics system)      3—4 74—75 78—79 97
Grueneisen relation      188
Hall probe      101
Hartree — Fock method      117 123 125—127
Hausdorff distance      255
Helmholtz coils      102—103
High-energy electron diffraction      1 82 see
High-energy ion scattering (HEIS)      206 294—296
High-resolution electron energy loss spectroscopy (HREELS)      98 204 291—292
I(g) method      172 225 243 248 258—265 267
Imaginary potential (absorptive)      252 262 see
Impurities      182 244
Incident beam angle, determination of      90 105—108 245
Incident beam angle, notation      62—64
Incommensurate overlayers      22 24 171—172 232
Inelastic damping      156 158 160 176—178 see
Inelastic low-energy electron diffraction (ILEED)      98
Infra-red spectroscopy (IR)      204 292—294
Inner potential      1 143—147 209 214 221 225 247 262—263 266—268 275
Instrument response function      99—100 222
Ion scattering methods (ISS)      45 205—206 303 see
Ion-core scattering      118 129—131 148—149 173 175 196 209 211—212 215 288
Irrationally-related lattices      see incommensurate overlayers
Ising model      236—237
Islands      13 90 99 108—109 232
Iterative methods      161—170
k-space representation      149 153 164 169—170 174
Kinematical methods      157 159 172 180 182 187 192 196 198—199 209—215 216 239 242 258
Kohn — Sham — Gaspar (KSG) approximation      124 126
l-space representation      148 153 157 166 169—170 174
Labelling of diffraction beams      62—64
Lateral shifts (in surface atomic layer)      270—271 296
Lattices, Bravais lattices      64
Lattices, lattice points      5 6
Lattices, lattice rods      8
Lattices, lattice vectors      6 7 31
Lattices, real space lattice      7
Lattices, reciprocal lattice vectors      6
Lattices, reciprocal space      7
Laue condition      6 8 212 220
Laue condition, Laue nets      29 30
Laue condition, Laue patterns      33
Layer      157
Layer-doubling method      162—164 166 168 178 182
Layer-KKR method      156—157 162 164
Legendre functions      130
Levinson's theorem      136 140
Levy distance      255
Lindemann;s melting criterion      192
Low-energy ion scattering (LEIS)      206 294—296
Low-energy positron diffraction (LEPD)      283—285
Macroscopic surface plane      53—54 57 218 222
Magnetic field cancellation or shielding      101 see
Magnetic surface structures      48 112 173 283
Mean free path      73 101 155 179 209—210 283 290 see
Measurement of intensities      76
Measurement of intensities by computerized video camera      78 88 95
Measurement of intensities by Faraday cup      2 74 76—78 94
Measurement of intensities by photography      78 95 262
Measurement of intensities by spot photometer      76—78 95
Measurement of intensities of primary beam current      76
Medium energy electron diffraction (MEED)      170 195 242 258 284—286
Medium energy ion scattering (MEIS)      206 289 294—296
MEMLEED      82 84 95—97 115
Micro-LEED, influence of high-energy source      84 see
Microfacet      59—62
Miller indices      33 41 54 56—62
Molecular adsorption techniques      90 174—179
Momentum representation      149 see
Mort detector      88 111—114
Mu metal      74 102
Muffin-tin approximation      117—122 129 247 see
Muffin-tin radius      142 170
Muffin-tin zero      118 132 143 145
MUFPOT      136
Nearly-free electron (NFE) materials      127
Neel temperature      112
Negative electron affinity (NEA) source      114—115
Notation, adsorbate structures      52
Notation, plane surface structures (Wood's notation)      50 53
Notation, stepped surface structures      57—62
Nth order interlayer scattering method (NIS)      161
Optical potential      see inner potential
Order-disorder effects      204 216 234—239
Overall f-factor (R)      251—252
Overlayer coverages by LEED      108—110
Overlayer coverages by radioactive tracer methods      110 see
p-waves, d-waves and f-waves      142
Partial waves      132 149 156 288 see
Pauli principle      117
Peak width      100 145 237 252
Pendry r-factor      252—254 256 263 264—265 267
Penetration depth      2 155—156 158 193
Perturbation schemes      153 159—161 168 247 see
Phase shifts      131—143 160 169 210—211 216 218 284—285
Phase shifts, relationship with potentials      129
Phase shifts, relativistic      128—129 174 see
Phase transitions      43
Phonon scattering      183
Phonons      2 144 182 191 205 291
photoemission      see angular-resolved photdemission
Photoionization      114
Plane      157
Plane-wave representation      149 see
Plasmon threshold      144—145 155—156 291
Plasmons      2 144 291
Poisson's equation      118
Polar surfaces (anionic, cationic species)      48—49
Positive electron affinity (PEA) sources      115
Potentials, exchange and correlation terms      112—127 173 267—268 283
Potentials, ion-core      117—118
Potentials, relativistic      127—129 173 see inner
Primitive unit cell      see unit cell
Propagating beams      7 18 151 162 169
R-valves      248 258 262 265 268 275 277
Radioactive tracers (for coverage evaluation)      110
Ramsauer — Townsend effect      133
Reciprocal lattice, correspondence with diffraction pattern      8 10—11
Reciprocal lattice, matrix relationship      11—13
Reciprocal lattice, reciprocal space      50 159 see
Reconstructed surfaces      4 10 11 45 48 171 269—270 281 296
Reflection high-energy electron diffraction (RHEED)      170 286
Refraction      143 146—147 210 212
Registery      13 31 39
Registery shift      18 37
Relative beam intensities      see I(g) method
Relativistic effects      see spin-polarization
Reliability (of structural determinations)      see reliability factors and reproducibility
Reliability factors (r-factors)      248—258 260 262—271 275
Reliability factors (r-factors), double reliability factor      254 see Pendry
Renormalized forward scattering (RFS)      161—162 164—166 167—168 172 182
Reproducibility      244
Resolution of a diffractometer      221 244 283
Resolution of a diffractometer, angular resolution      79 84 99—101
Resolution of a diffractometer, energy resolution      4 13 79 84 97—101 204 291
Resolution of crystal structures      175
Resolving power      see resolution
Retarding field analyser (RFA)      see energy analysers
Reverse scattering perturbation (RSP)      161—162 166—167 168 176
Riccati — Bessel function      142
Rotation diagrams      240 258
Rumpling      47 147 157 171
Rutherford backscattering (RBS)      see high energy ion scattering
S-matrix      131
s-wave bound state      see bound state
s-waves      133 139—141 156
Sample manipulation (by goniometer)      84—88
Sample preparation      84
Satellite beams      23 25 232
Scanning tunnelling microscopy (STM)      303
Scattering cross-section      133 139 179
Schroedinger equation      127 129 136
Screen (phosphorescent or fluorescent)      74—75 see
Secondary ion mass spectroscopy (SIMS)      300 302
Shadowing of screen      78 84 91
Slater approximation      124—125 127
Space-group symmetry      see symmetry
Space-groups      66—68
Spherical Bassel differential equation      130 136
Spherical Bessel function      137—138 142 149
Spherical Hankel function      130 136
Spherical Neumann function      137—138
Spherical waves      148 .
Spin-polarized LEED (SPLEED)      88 110—115 173—174 283
Spin-polarized LEED (SPLEED), double-diffraction      112—114
Spin-polarized LEED (SPLEED), r-matrices      133—136 see
Spin-polarized LEED (SPLEED), spin interactions      127 173
Spin-polarized LEED (SPLEED), spin-orbit coupling      128
Spot photometer      see measurement of intensities
sputtering      294
Stars      see symmetry
Step structures      34 45 53—62 182 209 218—230 283
Step structures, cleavage plane steps      45
Step structures, facets      54—57 218 283 286 302
Step structures, notation      57 59—62
Step structures, vicinal surfaces      34 57—59
Structural symmetry      17 26—33 244—247 see
Subplane      157 159
Surface defects      see defects
Surface free energy      55 189 229
Surface potential barrier      91 145—147 210 213 258
Surface resonances      91 97—98
Surface thermal expansion      187—188
Symmetry, beam stars      26 28—29 181
Symmetry, glide-reflection symmetry      64 68—72 286
Symmetry, line symmetry      64
Symmetry, mirror-reflection symmetry      64
Symmetry, point symmetry      64
Symmetry, rotational symmetry      24 49 65
Synchrotron      288 290—291
Systematic beam absences      51—52 68—72 234
t-matrices      129 132—135 158 160 173 180 182 196—197 199 212
T-matrix method (Beeby's)      156—158 180
Telephotometer      see spot photometer
Thermal diffuse scattering (TDS)      190 197 253
Thermal vibrations      1 79 144 149 172 177—178 182—208 212 235—236 283
Transfer width      99—100
Two-atom per unit cell model      170
Underlayers      4
Unit cell      6 33
Unit cell, primitive unit cell      6 50
Unit cell, van der Waals forces      297
Variable phase approach      142
Vicinal surfaces      see step structures
Wave vectors      7
Wehnalt      80
Werizel — Kramers — Brillouin (WKB) approximation      126
Wigner — Seitz cell      118 120
Wood's notation      50—53
work function      143 263 311—312 see
Wulff construction      55—56
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