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Singh J. — Semiconductor Optoelectronics: Physics and Technology
Singh J. — Semiconductor Optoelectronics: Physics and Technology



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Название: Semiconductor Optoelectronics: Physics and Technology

Автор: Singh J.

Язык: en

Рубрика: Физика/

Статус предметного указателя: Готов указатель с номерами страниц

ed2k: ed2k stats

Издание: 1st edition

Год издания: 1995

Количество страниц: 725

Добавлена в каталог: 16.11.2009

Операции: Положить на полку | Скопировать ссылку для форума | Скопировать ID
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Предметный указатель
p-n diode, generation-recombination current      308
p-n diode, ideality factor      308
p-n diode, junction capacitance      313
p-n diode, minority and majority current      303
p-n diode, narrow diode      303
p-n diode, Poisson equation in a      291
p-n diode, recombination rate due to traps      308
p-n diode, saturation current      302
p-n diode, tunneling      311
p-n diode, under high injection      309
Packing density of crystals      47
Parabolic bands      66
Parasitic effects in a laser      575
PbSe for long wavelength detectors      346
PbTe for long wavelength detectors      346
PCM, cont'd, output distortion      573
PCM, cont'd, spectral output      574
Peak mode of a laser      500
Peak mode of a laser, shift in      503
Periodic potential      54
Periodicity of a crystal      3
Personick integral      421
Phase fluctuation      583
Phase matched guides in directional couplers      614
Phase rate equation      583
Phase retardation due to electro-optic effect      263
Phonon emission      153
Phonon occupation      130
Phonon scattering      130
Photoconductive detector      358
Photoconductive detector, dark conductivity      358
Photoconductive detector, equivalent circuit      359
Photoconductive detector, gain in a      360
Photoconductive detector, transit time      360
Photoconductive mode of a detector      351
Photocurrent in a p-i-n detector      363
Photocurrent in a p-n diode      350
Photocurrent, due to QCSE      617
Photon density of states      192 571
Photon density tailoring      540
Photon emission      192 499
Photon field      581
Photon lifetime      499 566
Photon occupation      174 486
Photoresist, coating      34
Photoresist, negative      34
Photoresist, positive      34
Phototransistor, frequency response      380
Phototransistor, gain      380
Phototransistor, HBT      378
Phototransistor, light absorbed      379
Phototransistor, quantum efficiency      378
Photovoltaic mode      351
Planar Defects      17
Planck's theory      408
Plasma etching      40
Pockel effect      261
Point defects      16
Poisson distribution      406
Poisson equation in a p-n diode      291
Polar optical phonon scattering      132
Polarization of light in switching      603
Polarization of light selection rules      188
Power output from an amplifier      629
Power output of a LED      474
Poynting vector      174
Preamplifier      422
Preamplifier noise      423
Primitive unit cell      3
Primitive vectors      3
Principal dielecric constants      260 711
Programmable spatial light modulator      608
Pulse code modulation, PCM      554 572
Pulse compression      632
Pulse propagation and chirp      633
Q-factor of a cavity      579
Q-factor of a cavity, laser linewidth factors      580
Quantum confined Stark effect, QCSE      265 604 617
Quantum confined Stark effect, QCSE, based devices      617
Quantum confined Stark effect, QCSE, BRAQWET device      606
Quantum confined Stark effect, QCSE, electro-absorption modulator      606
Quantum confined Stark effect, QCSE, exciton absorption      605
Quantum confined Stark effect, QCSE, modulation depth      608
Quantum confined Stark effect, QCSE, modulator response      608
Quantum confined Stark effect, QCSE, multi-quantum well HBT      620
Quantum confined Stark effect, QCSE, negative resistance      619
Quantum confined Stark effect, QCSE, normally OFF modulator      606
Quantum confined Stark effect, QCSE, normally ON modulator      606
Quantum confined Stark effect, QCSE, self electro-optic device      619
Quantum confined Stark effect, QCSE, shift in exciton peak      606
Quantum efficiency      342
Quantum efficiency of a p-i-n detector      364
Quantum efficiency of an LED      456
Quantum well APDs      388
Quantum well bandstructure      85
Quantum well bandstructure, effective bandgap of a      86
Quantum well bandstructure, energy bands      86
Quantum well inter-subband detector, detection process      386
Quantum well inter-subband detector, polarization selection      386
Quantum well lasers      508
Quantum well lasers, strained      514
quantum well structure      11 21
Quantum well, absorption coefficient      191
Quantum well, exciton linewidth      257
Quantum well, excitonic effects      247 253
Quantum well, intraband absorption      202
Quantum wire lasers      518
Quasi-Fermi levels      160 492
Radiative lifetime under inversion      206 451
Radiative lifetime under strong injection      206 451
Radiative lifetime under weak injection      206 451
radiative recombination      205
Radiative recombination time in GaAs      207
Random alloy      81
Rate equations for a laser      499 558
Reach-through structure      371
Real part of refractive index      581
Receiver amplifier      419
Receiver sensitivity      425 428
Reflection coefficients for vertical incident light      176
Refractive index      175
Refractive index, change due to excitons      276
Refractive index, complex      175
Regrowth issues in OEICs      42
Regrowth, epitaxial      42 525
Relaxation oscillations      558
Reliability of LEDs      475
Renormalization of bandgap      226 504
Responsivity      342
RHEED      26
Richardson constant      327
S functions      58
Saturation velocity      142
Scattering from lattice vibrations      130
Scattering of electrons      126
Scattering potential      128
Scattering time      137
Schottky barrier diode      316
Schottky barrier diode, capacitance      323
Schottky barrier diode, current flow      318
Schottky barrier diode, Richardson constant      321
Schottky barrier diode, small signal response      323
Schottky barrier diode, thermionic emission      320
Schrodinger equation      54
Selection rules      188
Self electro-optic device, SEED      619
Semi-insulating substrate      20
Semiconductor      61
Shot noise      406
Shot noise current      408
Si bandstructure      66 77
Si effective masses      77
Si, density of atoms      10
Si, mobility      138
SiC for LEDs      443
Side mode suppression in DFB lasers      531
Signal-to-noise ratio      406
Simple cubic      5
Small signal modulation of lasers, cont'd, stimulated recombination time      562
Small signal modulation of lasers, cont'd, thermalization times      562
Small signal modulation of lasers, cutoff frequency      566
Small signal modulation of lasers, damping function      564
Small signal modulation of lasers, dependence on Auger effects      565
Small signal modulation of lasers, dependence on differential gain      566
Small signal modulation of lasers, dependence on injection current      565
Small signal modulation of lasers, dependence on photon lifetime      566
Small signal modulation of lasers, electron devices versus a laser      568
Small signal modulation of lasers, electron injection and thermalization      562
Small signal modulation of lasers, gain compression coefficient      568
Small signal modulation of lasers, gain compression effects      566
Small signal modulation of lasers, resonant frequency      564
Small signal modulation of lasers, small signal response function      564
Solar cell, amorphous Si      354
Solar cell, conversion efficiency      352
Solar cell, fill factor      352
Solar cell, open circuit voltage      352
Solar cell, short circuit current      352
Solar spectrum      353
Soliton communication system      661
Specific detectivity      409 501
Spectra under modulation      585
Spectral output of lasers      578
Spectral output of lasers, laser linewidth      578
Spectral output of lasers, laser linewidth requirements      579 666
Spectral output of lasers, optical cavity dependence      578
Spectral purity of a LED      465
Spin coating      34
Spontaneous emission      486 688
Spontaneous emission and noise      584
Spontaneous emission factor      501
Stimulated emission      486 688
Stimulated emission time      571
Strain and bandstructure modification      90 93
Strain, advantages in lasers      514
Strained epitaxy, motivations      28 32
Strained heteroepitaxy      28
Strained heteroepitaxy, dislocations      31
Strained InGaAs      91
Strained quantum well lasers, Auger rates      517
Strained quantum well lasers, bandgap tunability      514
Strained quantum well lasers, built-in strain      514
Strained quantum well lasers, effective mass reduction      516
Strained quantum well lasers, laser reliability      517
Strained quantum well lasers, reduced threshold current      514
Subbands      86
Substrates for detectors      345
Superlattices      11
Superluminoscent LED      464
Surface emitting laser      534
Surface emitting laser, arrays      535
Surface emitting laser, charge injection difficulty      535
Surface emitting laser, reflectivity      535
Surface emitting LED      462
Surfaces      13
Surfaces reconstruction      13
TE polarized light      558
TE polarized light absorption      271 277 512
Temperature dependence of a laser output      540
Temperature dependence of a LED output      471
Temperature dependence of bandgap      80 677
Temporal response of a laser      554
Temporal response of an LED      469
Tensile strain      92
Thermal noise      416
Thermionic current      320
Threshold condition for a laser      496
Threshold condition for Auger processes      217
Time delay      557
TM polarized light      558
TM polarized light absorption      271 277 512
Transconductance      421
Transform limited pulse      632
Transimpedence amplifier      423
Transistor noise      421 423
Transmission capacity of some transmission approaches      648
Transport in semiconductors      126
Traveling wave amplifier      623
Vacancies      16
Valence band      61
Valence band in quantum wells      87
Valence band states      63
Vapor phase epitaxy      22
Variational method      248
Vector potential      172
Vector-matrix architecture      608
Vegard's law      81
Velocity-field relations      136 683
Virtual crystal approximation      81
Wave equation      172
Wave propagation in crystals      710
Waveguide modes      706
Wavelength division multiplexing, WDM      649
Wavelength selective detection      390
Wet chemical etching      38
White noise      416
Wurtzite structure      49
X-point      60
Zener diode      311
zero point energy      130
Zinc blende structure      6
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