Abeles 206
Absolute thermoelectric power 68
Abundancy region 278
Acceleration of electrons 7 12 99 111
Acceptor traps 42
Acceptors 27 42 125 128 345
Acoustical modes 180
Alkali metals 120
Allowed bands 91
Alpha ( , current amplification factor) 307 332 333 337 342
Aluminium 22 140 213
Aluminium antimonide 260 369
Aluminium oxide 244
Andrews 242
Angstroem 340
Ansbacher 373
anthracene 261 262
Antimony 213
Area rectifiers 263
Arsenic 138 213
Arthur 370
Atomic spectrum 103
Average effective mass 146
Baltensperger 243
Banbury 361 366 370
Band structure 113—118 128 133
Bardeen 231 263 303 305 307 319 361
Bardsley 370
Barium oxide 244
Barrier, barrier layer 237 267 272 284 286 292
Base connexion 305
Baumbach 242
Bell 129
Bell Telephone Co. 305 311
Benzer 303
Beryllium 140
Bethe 172
Bismuth telluride-tellurium couples 261
Bloch 82
Bloch's theorem, equation 88 89 105
Blocking layer see "Barrier"
Bloom 240
Body-centred cubic lattice 128
Bohr orbits 108 166
Boltaks 258
Boltzmann 373
Boltzmann's constant 11 35
Boltzmann's distribution, statistics see "Classical statistics"
Boltzmann's equation 13 323
Boltzmann's integro-differential equation 49 52 53 65 190
Born 82
Born — Karman boundary condition 85 87 150
Boron 140 213
Bottom region 11 117 121
Boundary between conductors 18 34 116 197 237 263 274 305
Boundary condition 83 85
Brattain 63 303 305 307 319 361
Bray 302 351 360 367
Breakdown in p-n junctions 328
Brebrick 240 251
Brillouin 82
Brillouin zones 109 111 131 145
Bronstein 34
Brown 370
Bulk lifetime 316 see
Burstein 260
Burton 220 232 348
Busch 243 244 375
Cadmium 22
Cadmium antimonide 258
Caesium 169 174
Callaway 131
Capacity of barriers 284 288
Capture cross-section 345 348
Carrier extraction 370
Carrier injection 260 305
Carriers 7 see "Holed" "Minority
Cat-whisker 263 305 309
Catalyst (for generation of carriers) 363
Cauchois 138
Cellular method 129
Characteristic temperature 165
Charge density 84 92 see
Charge distribution near contact 274—282
Chemical barrier 293
Classical statistics, approximation 36 42 44 186
Clausius 159
Collector 305 321 342
Collisions 8 10 49 51 57 142 328
Compensating field  18 30 31 66 73 80 196
Compensation 126
Conduction band 121 131 191
Conduction processes 92
Contact potential 269 273 274
Conwell 58 59
copper 22 169 174
Copper oxide rectifier 264 289
Cores 104
Costellan 243
CP-4 etch 316
Cronemeyer 244 248
Crystal rectifiers 263
Cubic lattices 82 104 110 147
Cubic symmetry 129
Cupric selenide, sulphide, telluride 304
Cuprous oxide 23 304
Cuprous sulphide 304
Current amplification 307
Current gain 335
Cyclotron resonance 142
Davidov 263
Decay of injected carriers 315
Degenerate electron gas 40 63
Density of carriers 119 121 127
Density of electrons 18 22 36 44 46 71 73 76 124
Density of states 91 117
Detailed balancing 346
Diamagnetic resonance see "Cyclotron resonance"
diamond 138 140
Dielectric breakdown 188
dielectric constant 138
Differential conductance of rectifier 297
Diffusion 8 14
Diffusion equation for minority carriers 311 315
diffusion length 260 326 389
Diffusion potential 285 362
Diffusion theory of rectification 293
Dingle 142
Diode gap 268
Diode theory of rectification 292
Dipoles 179
Dislocations 222 358
Displaced atoms 147 149 154
Donors 26 42 124 126 345
Double layer 272
Douglas 261
Dresselhaus 142
Drift 9 49
Drift mobility 235
Drift velocity 9 25
Drude 17 34
Dunlap 216
Eckard 34
effective mass 112 123 145
Ehrenberg 241 373
Eigenfunction, eigenvalue 85 90 91 97 106 154 182
Eindhoven 252
Einstein's relation 13
Elastic collisions 51
Elastic waves 153
| Electric conductivity 1 19 22 27 66 72 75 79 188
Electric current 64 195 197
Electron affinity 166
Electrons 7 25
Elementary Semiconductors 209
Emitter 305
Emitter admittance 335 336
Energy 20 28 34 83 372
energy bands 91 190
Energy flow 20 28 64 195
Energy gap 123 127 135 138 260
Energy surface 110 146
entropy 41
Ettingshausen coefficient 3 248
Exhaustion region 278 310
expectation value 94 182
Extrinsic semiconductors 26 40 119 121 127
Face-centred cubic lattice 128
Fan 135 216 345 351 358
Faraday 6
Farmer 261
Fermi level (= thermodynamic potential) 123 139 166 268
Fermi — Dirac distribution, statistics 35 92 120 372
Fermi — Dirac integrals 38 375
Ferric oxide 244
Ferrous aluminate 253
Ferrous oxide 252
Ferrous sulphide 304
Fick's law 9
Filamentary transistor 317 320
Finlayson 224
Floating potential 335 338 367
Floquet's theorem 88
Fluorescence 357
Forbidden band 91
Forces on carriers 200
Forming 320
Fourier components 149
Fowler 261
Franck — Condon principle 239
Frederikse 60
Frenkel defects 239
Frequency response of transistors 340 341
Fritzsche 226
Froehlich 179 246
Fuerth 9
Fuller 369
Fused junction rectifies and transistors 321
Gallium 217
Gallium arsenide, antimonide 260
Galvanomagnetic constants 1 200
Gamma see "Injection ratio"
Garret 303
Gauge transformation 84 94
Gauss's theorem 85
Geballe 226
Gebbie 358
Germanium 23 55 63 127 132 135 138 145 208 211 310
Germanium diode 264
Germanium filament 311 359 371
Gibbs 372
Gibbs's phase rule 239
Gibson 349 358 361 370
Gliessman 224
Gold 22 169 174
Gold-doped germanium 135
Goldsmith 261
Goucher 349
Grace 238
Grain boundaries 237
Granville 358 361
graphite 140
Green 361
Green's theorem 96 107
Grown junction rectifiers and transistors 321
Grueneisen 174
Gudden 26
Gurevich 60
Gurney 40 239 242
Haayman 252
Hall angle 3 19 27 29 69 201
Hall constant 2 20 22 26 27 28 69 72 78 80 206
Hall effect 2 19
Hall efficiency 3
Hall mobility 235
Hall power 3
Hamiltonian 82 152 181 132 184
Hankel function 351
Hartmann 244
Haynes 316 359
Helmholtz free energy 41 373
Herman 131
Hermite functions 154 182
Herold 336 341
Herring 60 131 199 235
High temperatures 167 187
Hirsch 241
Hogarth 242 317
Hole conductors 27 203
Holes 25 122 123 203
Hook collector 342
Houghton 367
Houston 34
Howarth 188 238 250
Howe 238
Hull 348
HUM 129
Humphrey 238
Hung 224
Image force 272 300
Imperfect scattering 55 56
Impurities 25 26 118 213 358
Impurities in Ge and Si (table) 222
Impurity band 119
Impurity band conduction 226 246
Impurity scattering 58 60
Impurity semiconductors see "Extrinsic a"
Indeterminacy of electric field 201
Indium 213
Indium antimonide 258
Indium arsenide, phosphide 260 369
Infra-red absorption, radiation 133 184
Inhomogeneities in conductors see "Junctions"
Injection 310 322
Injection ratio 317 354 365
Input admittance 335
Insulator 120
Intermediate metals, law of 4 31 198
Intermetallic compounds 209 258 304 369
Intrinsic (alpha) 314 333 361
Intrinsic semiconductors 26 119 121 124 127
inversion 285 361
Iodine 138
Ion current 14
Ionic compounds 235
Ionic lattice 179
Ionic semiconductors 186 209
Ionization by collision 328
Ionization chamber 17
Ionization energy 166
Ionized centres 42
Ions 7
Isothermal diode 268 272
Isotropic approximation 113
James 133
Jeffreys 152
Joffe 261
Jones 82 92 102 205
Jones — Zener condition 95 101
Joule heat 5 51 68
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