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Mott N.F. — Electronic processes in ionic crystals
Mott N.F. — Electronic processes in ionic crystals



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Название: Electronic processes in ionic crystals

Автор: Mott N.F.

Язык: en

Рубрика: Физика/

Статус предметного указателя: Готов указатель с номерами страниц

ed2k: ed2k stats

Издание: Second Edition

Год издания: 1950

Количество страниц: 275

Добавлена в каталог: 26.03.2008

Операции: Положить на полку | Скопировать ссылку для форума | Скопировать ID
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Предметный указатель
Absorption of light, by alkali-halides      95
Absorption of light, by F-centres      113
Absorption of light, by non-metals      88
Absorption of light, by semi-conductors      189
Alkali-halides: conduction in strong fields in      196
Alkali-halides: crystal structure      2
Alkali-halides: dielectric break­down in      198
Alkali-halides: energy bands for electrons in      79
Alkali-halides: F-centres in      109 ff
Alkali-halides: ionic conductivity      38
Alkali-halides: phosphorescence of      225
Alkali-halides: photoconductivity in      124 133
Alkali-halides: ultra-violet absorption bands      95
Alpha particles, phosphorescence due to      207
Aluminium, oxide as a semi-conductor      165
Aluminium, protective films on      261
Antonow-Romanowsky, W.W.      211 214 216
Austen, A.E.W. and Hackett, W.      197
Azides, reduction of      266
Barnes, R.B.      23
Bartelt, O. and Klug, H.      245
Bedworth, R.E.      see “Pilling and B.”
Beese, N.C.      219
Berg, W.F.      239 240 245
Berg, W.F. and Mendelssohn, K.      234 241 242 247
Bernal, J.D.      35
Bhatnagar, S.S. and Mitra, N.G.      163
Blackman, M.      23 24 (see
Bloch, O.      227
Bogomolowa, M.G.      56
Born, M,, and Heisenberg, W.      13
Born, M.      1 16
Born, M. and Blackman, M.      23
Born, M. and Goeppert-Mayer, M.      1 6 7 19 23 97
Born, M. and von Karman, Th.      23
Brindley, G.W. and Hoare, F.E.      113
Buechner, A.      see “Eueken and B.”
Buenger, W.      225
Buenger, W. and Flechsig, W.      226
Carpenter, L.G. and Stroodley, L.G.      48
Cauchy relations      10
Coblentz, W.W.      192
Collective electron model      65
Colour centres      see “F-centres”
conduction duo to      153
Cuprous oxide: as a photo-conductor      189
Cuprous oxide: as a rectifier      176
Cuprous oxide: as a semi-conductor      161 163 168
Cuprous oxide: formed on copper by oxidation      253
Cuprous oxide: in oxide photo-cells      192
Czerny, M.      23
Davydov, B.      185
de Boer, J.H.      98
de Boer, J.H. and van Geel, W.Ch.      161
de Boer, J.H. and Verwey, E.J.W.      167 188
de Groot, W.      211 216
Debye, P.      15
Dember, H.      192
Dent, B.H.      see “Lennard-Jones and D.”
Deutschmann, W.      see “Schottky and D.”
Devonshire, A.F.      see “Lennard-Jones and D.”
Dielectric breakdown      197
dielectric constant      10
Diffusion in solids      33 ff 52
Ditchburn, R.W.      91
DuBridge, L.A.      see “Hughes and D.”
Dunn, J.S.      254
Durand, M.A.      10
Dushman, S. and Langmuir, I.      34
Dye sensitization      243
Eggert, S. and Noddack, W.      228 (see
Elastic constants of ionic crystals      10
Electron affinities of halogens      8
Engelhard, E.      161 162 163 167 189 191
Eueken, A. and Buechner, A.      23
Evans, C.H.      see “Webb and E.”
Ewing, D.H. and Seitz, F.      66 79
excitons      84 90 230
Eyring, H.      36
F'-centres      128 135
F-centres: conversion into F'-centres      134
F-centres: energy of      146
F-centres: formation by ultra-violet illumination      145
F-centres: magnetic susceptibility due to      113
F-centres: migration of      140
F-centres: model for      110
F-centres: produced by X-rays      112
Fajans, K. and Joos, G.      13 18
Fesefeldt, H.      95 100
Flechsig, W.      121 (see
Fowler, R.H.      2 5 65 152 157 170 181 184
Franck — Condon principle      160
Franck, J. and Scheibe, G.      95
Franck, J. and Teller, E.      208 243
Frenkel lattice defects      157
Frenkel, J.      26 89 196 221
Frenkel, J. and Joffe, A.      180
Fritsch, O.      165 167
Froehlich, H.      105 193 197 198 200
Froehlich, H. and Mott, N.F.      25 105 168
Garner, W.E. and Maggs, I.      265
Garner, W.E. and Marks, D.J.B.      264
Glaser, G. and Lehfeldt, W.      132
Goeppert-Mayer, M.      see “Born and G.”
Goodeve, C.F. and Kitchener, J.A.      208 230
Goodwin, E.T.      86
Grimm, H.G. and Wolff, H.      18
Grondahl, L.O.      177 178 193
Gruenewald, K.      253
Gudden, B. and Pohl, R.W.      121 128 139 185 209
Gundermann, J. and Wagner, C.      258
Gurney, R.W.      237
Gurney, R.W. and Mott, N.F.      87 88 113 135 146 201 230 242
Gyulai, Z.      73
Hackett, W.      see “Austen and H.”
Hall constant of photoconductors      191
Hall constant of semi-conductors      156
Hammen, H.      see “Wagner and H.”
Hartmann, W.      165 167 178 (see
Hecht,K.      122
Heckmann, G.      19 25
Heisenberg, W.      see “Born and H.”
Heitler, W. and London, F.      65
Helmholz, L.      see “Mayer and H.”
Henderson, S.T.      204
Herschel effect      243
Herzfeld, K.F.      70 103
Herzfeld, K.F. and Wolf, K.L.      19 (see
Hilsch, R.      224
Hilsch, R. and Pohl, R.W.      95 121 147 148
Hirschlaff, E.      150 202
Hlucka, F.      139
Hoare, F.E.      see “Brindley and H.”
Hoejendahl, K.      12 19
Homopolar binding      9
Huggins, M.L.      5
Huggins, M.L. and Mayer, J.E.      5
Hughes, A.L. and DuBridge, L.A.      73 185
Ingham, A.E.      see “Jones and I.”
Insulators: contact with a metal      168
Insulators: electric breakdown of      197
Interstitial atoms      109
Interstitial ions      27
Ionic conductivity      36 ff
Ionic conductivity radii      6 267
Jander, W. and Stamm, W.      165
Jensen, P.      113
Joffe A. and Joffe A.F.      193
Joffe, A.      see “Frenkel and J.”
Joffe, A.F.      see “Joffe and J.”
Johnston, J.E.      see “Skinner and J.”
Jones, H. and Mott, N.F.      90
Jones, J.E. and Ingham, A.E.      5 59
Joos, G.      see “Fajans and J.”
Jost, W.      26 29 45 53 56 57 261
Jost, W. and Nehlep, G.      50
Jost, W. and Rueter, H.      55 (see Reinhold
Juse, W.P. and Kurtschatow, B.W.      163
Karlsson, H. and Siegbahn, M.      76
Ketelaar, J.A.A.      62
Kimball, G.E.      66
Kitchener, J.A.      see “Goodeve and K.”
Klarmann, H. and Muehlenpfordt, J.      197
Kleinschrod, F.G.      111 114 148
Klemm, W.      98
Klemm, W. and Schueth, W.      163
Klug, H.      see “Bartelt and K.”
Koch, W.      224
Koch, W. and Wagner, C.      46
Kroeger, F.A.      204
Kurtschatow, B.W.      see “Juse and K.”
Kurtz, S.S. and Ward, A.L.      14
Landau, L.      87
Landau, L. and Lifshitz, E.      193
Landshoff, R.      100
Lange, B.      194
Langmuir, L,      see “Dushman and L.”
latent image      234.
Lattice defects      25 ff
Lattice defects effect on conductivity      153
Lattice defects effect on sensitivity of bromide emulsions      234
Lattice defects frozen-in      36
Lattice defects in alkali-halides      109 ff
Lattice defects trapping of electrons at      80
Lattice energy      7
Lattice vibrations      23
Lead iodide, conduction in      53
Lehfeldt, W.      39 120 132 138 139 186 242 (see
Lennard — Jones, J.E. and Devonshire, A.F.      36
Lennard-Jones, J.E.      66
Lennard-Jones, J.E. and Dent, B.M,      70
Leszynski, W.      242
Levy, R.B.      see “Mayer and L.”
Lewschin, W.L.      214 (see
Lewschin, W.L. and Antonow-Romanowsky, W.W.      214
Liebold, G.      see “Tubandt Reinhold and
Lifshitz, E.      see “Landau and L.”
Littleton, M.J.      see “Mott and L.”
London, F.      4; see “Heitler and L.”
Lorenz-Lorentz formula      14
Loveland, R.P.      see “Sheppard Trivelli and
Lueppo-Cramer, H.      246
Luminescent materials      202 ff
Lyddane, R.H. and Herzfeld, K.F.      23
Madelung constant      3
Maggs, I.      see “Garner and M.”
Magnetic susceptibility of crystals with F-centres      113
Magnetic susceptibility of semi-conductors      201
Margenau, H.      4
Marke, D.J.B.      see “Garner and M.”
Massey, H.S.W.      see “Mott and M.”
May, A.      8
Mayer, J.E.      5 8 (see
Mayer, J.E. and Helmholz, L.      7
Mayer, J.E. and Levy, R.B.      5
Mean free path in ionic crystals      104 ff 168 200
Mendelssohn, K.      see “Berg and M.”
Meyer, W. and Neldel, H.      166
Mica, conduction of in strong fields      196
Mitra, N.G.      see “Bhatnagar and M.”
Miyahara, S.      201
Mobility of electrons in ionic crystals      104
Mobility of electrons in semi-conductors      167
Mott, N.F.      73 87 94 95 96 113 135 150 175 184 194 221 202 266 (see “Gurnoy “Jones
Mott, N.F. and Littleton, M.J.      25 45 58 80
Mott, N.F. and Massey, H.S.W.      90
Muehlenpfordt, J.      see “Klarmann and M.”
Muto, T.      201
Nehlep, G.      see “Jost and N.”
Neldel, H.      see “Meyer and N.”
Nijboer, B.R.A.      165
Nix, F.C.      186 194
Noddack, W.      see “Eggert and N.”
Nordheim, L.      180
O'Bryan, H.M. and Skinner, H.W.B.      75 (see
Onsager, L.      14
Oppenheimer, J.R.      91
Ottmer, R.      117
Overlap energy      2 5
Oxidation of metals      249
Oxide photo-cells      194
Oxides, conduction in      152 ff
Oxides, electronic energy bands for      76
Oxides, ultra-violet absorption by      101
Parfianowitsch, I.A. and Schipizyn, S.A.      56
Pauling, L.      6 13
Peierls, R.      89 221
Photoconductivity      104
Photoconductivity, in alkali-halides      124
Photoconductivity, in insulators      117
Photoconductivity, in semi-conductors      188
Photoconductivity, primary and secondary      118
Photoconductivity, secondary      185
Photoelectromotive force      194
Pick, H.      117 128 129 133
Pilling, N.B. and Bedworth, R.E.      252
Pohl, R.W.      11 111 116 125 128 133 145 148 (see “Hilsch
Polanyi, M. and Wigner, E.      34
Polarizability of ions      2 10
Positive holes      68
Pringsheim, P.      202
Print-out effect      228
Protective films on metals      261
Pruschinina-Granowskaja, W.      197
Quartz films, conduction in      197
Quirk, R, F.      see “Sheppard Wightman and
Rabinovitch, A.J.      236
Randall, J.T.      203 204 205 216 221 223
Ranges of photoelectrons      119 133
Rectifying contacts      176
Reduction of salts and oxides      263
Refractive index of ionic crystals      11
Reimann, A.L.      126 215
Reinders, J.      236
Reinhold, H.      see “Tubandt Reinhold and “Tubandt Reinhold and
Rexer, E.      151
Riehl, N.      207
Rogowski, W.      197
Rothschild, S.      204
Rueter, H.      see “Jost and R.”
Scheibe, G.      see “Franck and S.”
Schipizyn, S.A.      see “Parfianowitsch and S.”
Schischlowski, A.A. and Wawilow, S.J.      214
Schneider, E.G. and O'Bryan, H.M.      95
Schonwald, B.      161 189
Schottky defects      28 ff
Schottky, W.      184 (see
Schottky, W. and Deutschmann, W.      177
Schottky, W. and Hartmann, W.      179
Schottky, W. and Waibel, F.      178
Schottky, W. Stoermer, R. and Waibel, F.      177
Schuth, W.      see “Klemm and S.”
Seith, W.      54 (see
Seitz, F.      100 139 203 207 208 209 212 219 220 224 225 (see
Semi-conductors      152 ff
Semi-conductors contact with i metal      174
Seogor, R.J. and Teller, E.      198
Sheppard, S.E. Trivelli, A.P.H. and Loveland, R.P.      235
Sheppard, S.E. Wightman, E.P. and Quirk, R.F.      241
Sherman, J.      3 6 8
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