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| Авторизация |
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| Holmes R.A. — Physical Principles of Solid State Devices |
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| Предметный указатель |
Schottky barrier diode 165
Schroedinger wave equation 26
Schroedinger wave equation, time-independent 28
Semiconductor 96 97 102
Semiconductor flow equations 133
Semiconductor, conduction electron density 96 97 102
Semiconductor, hole density 96 97 102
Sheet resistance 177 178
Silicon, resistivity 140
Small signal transistor currents 187
Solids, covalent 2
Solids, crystalline metallic 6
Solids, electron states in 9
Solids, ionic 5
Solids, noncrystalline 7
Spin 41—43
State occupancy, in band structure model 84—93
State occupancy, in k-space 83
States per energy level 42
Strain components 244
Stress components 245
Surface state charge 210
Surface, ionization 46
Surface, leakage current 194
Surface, polarization charge 239 254
Thermal carrier leakage 194
| Threshold voltage 212
Transistor characteristics 186 187 192
Transistor equivalent circuits 188 189
Transistor step response 200—204
Transition elements 11
Trapping levels 109
Ultraviolet transparency 229
Uniaxial anisotropy 303
Valence bond 88
valence electrons 10
Vector potential 259
Velocity, group 23
Velocity, phase 20
Wave function 24
Wave function, antisymmetric 41
Wave function, carrier 67
Wave function, free particle 25
Wave function, modulation 68 Z
Wave function, stationary-state 30
Wave function, symmetric 41
Wave packet, current flow 114—117
Wave packet, Fourier transform 21
Wave packet, group velocity 112 117
Wave vector 20
Weiss internal field 289 298
Young's modulus 242
Zener breakdown 164
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