|
|
Àâòîðèçàöèÿ |
|
|
Ïîèñê ïî óêàçàòåëÿì |
|
|
|
|
|
|
|
|
|
|
Zory P.S. (ed.), Kelley P. (ed.), Liao P.F. (ed.) — Quantum Well Lasers |
|
|
Ïðåäìåòíûé óêàçàòåëü |
Absorption, optical 3 59 294
AlGaAs see "GaAs/AlGaAs"
AlGaInP see "GaInP/AlGaInP"
Amplified spontaneous emission 487 490
Amplifiers, optical fiber 370
Amplifiers, semiconductor 351
Angular momentum representation 47
Anisotropy see "Gain TE/TM"
Antiguiding 398
Atomic orbitals 45
Atomic ordering (GaInP/AlGaInP) 419 426—427
Auger recombination see "Recombination"
Axial approximation 78
Band filling 155
Band mixing see "Valence band structure/effects"
Band offset/discontinuity, GaAs/AlGaAs 6 78—80 135
Band offset/discontinuity, GaInP/AlGaInP 421—422
Band offset/discontinuity, InGaAs/AlGaAs 78—80 380
Band offset/discontinuity, InGaAs/InGaAsP 346
Band structure, conduction band 60—61
Band structure, effects of strain on 72—78 199 342 354
Band structure, in III-V semiconductors 45—49 63—67
Band structure, valence band see "Valence band structure/effects"
Band, parabolic 3 137 139 140
Band-tail states 136
bandgap 3 5
Bandgap, AlGaAs 135
Bandgap, AlGaInP 419—421 427
Bandgap, effective, of quantum well 141
Bandgap, renormalization 150 444
Bandgap, shrinkage 109
Barrier layer 2 7
Biaxial strain see "Strained active layers/lasers"
Bloch functions in III-V semiconductors 46—47
Bloch functions, definition of 19
Bloch functions, linear combinations of 47 63 67
Bloch functions, normalization of 19
Bloch functions, orthogonality of 20 46
Bloch functions, symmetry of 46
Brillouin zone 2 338—342
Broadening see "Gain" "Linewidth Intraband "Spontaneous
Buried heterostructure laser (BH) 207 400
Carrier confinement/injection efficiency (capture/leakage) 43 159 164—166 170—172 218 230 236—242 248 280—286 314—316 324 421—422 428—431 439—450 462—465 476 482 see
Carrier density 38 44 465 467—468 491
Carrier scattering see "Intraband relaxation"
Carrier transport 229—236
Carrier-carrier scattering 106 111
Carrier-phonon scattering 108 115
Catastrophic optical degradation 405 433—434 452
Cathodoluminescence 474 476
Cavity length (optimum) 173
Characteristic temperature (), GaAs/AlGaAs 155 166 470 482 486
Characteristic temperature (), GaInP/AlGaInP 429 440—445
Characteristic temperature (), InGaAs/AlGaAs 390 394 405
Characteristic temperature (), InGaAs/InGaAsP 348 350
Charge neutrality 137 140 164
Chirp 2 462
confinement see "Carrier confinement" "Optical
Connection rules for envelope functions 60 68
Coupled wells 6
Critical thickness 372
Deformation potentials 340 376
Density of states 8—9 20—24 75 104 136—138 142 191 462 465—466 488
Density of states, bulk 23
Density of states, optical 42
Density of states, reduced 34 138 467
Density of states, table 23
Differential gain see "Gain"
Dipole moment anisotropy 468
Doping effects on gain 90
effective mass 6 135 138 140 165 382 420—421
Effective mass equation, conduction band (nondegenerate) 58
Effective mass equation, valence band (degenerate) 63—72
Effective mass equation, valence band (degenerate), bulk solutions to 65
Effective mass equation, valence band (degenerate), coupling term in 65
Effective mass equation, valence band (degenerate), quantum well solutions to 67
Effective mass equation, valence band (degenerate), strained 74
Effective mass, anisotropy of 20 66
Effective mass, approximate conduction band 48
Effective mass, definition of 20
Effective mass, effect on gain 38
Effective mass, effects of other bands on 48
Effective mass, effects of strain on 76
Effective mass, in-plane 44 62
Effective mass, reduced 34 138
Effective mass, relation to Luttinger parameters 64
Effective mass, values for 79
Effective well width 112
Efficiency, differential 132 310—316
Efficiency, external 280—286 350
Efficiency, internal 280—286 350 468
Efficiency, power 318
Electron oscillation 2
Electron-electron scattering 111
Electron-hole scattering 111
Energy broadening see "Lineshape function"
Envelope function approximation 19 58 64 341
Envelope functions in conduction band 59—60
Envelope functions in valence band 67—68
Envelope functions, definition of 19 111
Envelope functions, normalization of 19 71
Envelope functions, orthogonality of 31
Equivalent circuit 242
Erbium doped fibers 370
Exchange energy 108
Far field patterns 399
Fermi functions and levels 10 34 37 104 137—141 147 156 159 291 467 473 488
Fermi's golden rule 28—35
Frequency modulation, gain lever 260
GaAS see "GaAs/AlGaAs"
GaAs/AlGaAs (850nm) 7 86 134 159 163 175 194 295 300 367 462
Gain, broadening 41 92 99 104 125 143—150 294 311 462 468
Gain, compression 218 220 223 225
Gain, condition for see "Transparency"
Gain, confinement factor see "Optical confinement"
Gain, definition of 35
Gain, differential 38—40 88—91 155 175 219 347 384 462 460—472
Gain, example calculations of 84—92
Gain, high 298—302
Gain, lever 219 252
Gain, mode 27 166 293 304—305 429
Gain, peak/maximum 2 86 133 155 158 294—302 443—445
Gain, saturation 154—155 177 300 361
Gain, spectral convolution of see "Intraband relaxation"
Gain, spectral dependence 36 84 99 104 125 138 145 147—152 154 293 301 467
Gain, TE/TM 88 142 150 153 154 330 351 357 359 363
Gain, threshold 166 196 295 347 468
Gain-current relations, GaAs/AlGaAs 86—92 158 295—297 300—305
Gain-current relations, GaInP/AlGaInP 429
Gain-current relations, InGaAs/AlGaAs 86—92
Gain-current relations, InGaAsP/InP 295—297
Gain-guiding 398 449—452
GaInP/AlGaInP (670nm) 415—460
Green's function 102
Group velocity 36 42
Heat of formation 388
Higher lying quantized states 319—323
Hole-electron scattering 111
Hole-hole scattering 111
Index guided lasers 400 449—452
InGaAs/AlGaAs (980nm) 78 199 223 371
InGaAs/InGaAsP (1550nm) 163 233 344
InGaAsP/GaAs (810 and 860nm) 279
InGaAsP/InP (1300nm) 163 169 175 279
Injection efficiency see "Carrier confinement"
Interface quality 132
| Intervalence band absorption 330 332 420
Intraband relaxation 41 84 92 97—130 137 142—152 294 467
Inversion layer 7
K factor 234 399
k*p theory 337
k-selection (momentum conservation) 8 30 33 90 136 140 143 290
Landau levels 463 476
Laser arrays 402
Lattice match 371 416—418 425
Lead salt QW Laser 321
Leakage current see "Carrier confinement"
Lifetesting 403
Lifetime see "Recombination"
Lineshape function see "Intraband relaxation"
Linewidth, mode 155 384 462 472 483
Liquid phase epitaxy, (LPE) 2 10 278 368
Long wavelength lasers see "InGaAs/InGaAsP" "InGaAsP/InP"
Loss, (mode) 166 294 304 309—313 469 490
Luttinger parameters 64 338
Luttinger parameters, values for 79
Luttinger — Kohn Hamiltonian 58—67 337
Luttinger — Kohn Hamiltonian for (111) quantization axis 342 353
Luttinger — Kohn Hamiltonian, axial approximation 78 339
Luttinger — Kohn Hamiltonian, diagonal approximation 340 342
Luttinger — Kohn Hamiltonian, spherical approximation 339
Luttinger — Kohn Hamiltonian, spin matrices 338
Matrix element, basis function momentum 47 49 138
Matrix element, basis function momentum, values of 49
Matrix element, transition 31 50 70 138 145 177—178 290 357
Matrix element, transition, k-dependence of 80 358
Matrix element, transition, polarization, denendence of 52 150 293
Metalorganic chemical vapor deposition see "MOCVD" "OMVPE"
Misfit dislocations 372
MOCVD 10 11 15 368 386 425—426 463
Mode hopping 358
Mode-locking 264—271
Mode-locking, parameter ranges 267
Mode-locking, phasor description 270
Modulation bandwidth 218
Modulation efficiency, gain lever 255
molecular beam epitaxy (MBE) 3 5 10 11 15 368 390 425—426 463
Molecular beam epitaxy (MBE) on nonplanar substrates 476
Molecular beam epitaxy (MBE) on vicinal substrates 464 475 478
Momentum conservation see "k-selection"
Multi quantum well (MQW) 11 12 131—188 349 440
Non-Markovian process 110
Nonradiative lifetime see "Recombination"
OMVPE 425—426 463
OMVPE on nonplanar substrates 464 476 479
OMVPE on vicinal substrates 475
Optical confinement 135 166 293 299 395 429—430 437 443 462 468 481 488
Optical fiber amplifiers 370
Optical gain see "Gain"
Optical mode 400 469 488 492
Optical transition see "Transitions"
Organometallic vapor phase epitaxy see "OMVPE"
Oxide defined stripe lasers 391
P-doping, AlGaInP 428—429 439
Parabolic band 3 137 139 140
Pattern effect 214
Perturbation theory 28 62
Phase-locked array 402
photoluminescence see also "Efficiency"
Photoluminescence, AlGaAs/GaAs interface 177
Photoluminescence, InGaAsp (1300nm) 280—286
Photoluminescence, InGaAsP (850nm) 280—286
Photoluminescence, linewidth 425
Photoluminescence, quantum wires 474 486
Piezoelectric fields, strain-induced 343
Poisson's ratio 340 373
Polarization 52—57 101 125 132 150—154 293 382 386 see TE/TM"
Quantum dot 462
Quantum dot, fabrication techniques 473
Quantum dot, laser 462 477
Quantum res 2 46
Quantum res, density of states in 23 465—466
Quantum res, fabrication techniques 473
Quantum res, polarization dependence of 54—57
Quantum res, subbands 481 484 487
Quasi-Fermi level see "Fermi functions and levels"
Rare earth doped fibers 370
Recombination, Auger 135 158—159 161—163 168 170—171 330 333—334 347—348 385—386 420 445
Recombination, interface 161—162 170—174 177—180 182 474
Recombination, leakage 164—166
Recombination, non-radiative 9 142 159—163 see
Refractive index 36 42 135 139 141 421 472
Relative intensity noise, gain lever 258
Relaxation broadening see "Intraband relaxation"
Relaxation oscillation 225 462 470 483
Reliability 350 363 403
Reservoir model see "Carrier transport"
Resonant tunneling 2 7 14
Saturable absorber 265
Scattering see "Intraband relaxation"
Schroedinger equation 19 see
Screened Coulomb potential 111—112
Self-pulsation 265
Separate confinement 134 345
Separate confinement, AlGaInP 437—438
Separate confinement, graded index 197 207 211
Short-period superlattice 446—447
Spatial quantization 7
Spherical approximation 78
Spin degeneracy 138
Spin-orbit, interaction 47
Spin-orbit, splitting energy 47 63 78
Spontaneous emission 42—43 141 145 148—151 219
Spontaneous emission, broadening 145—146 149 151
Spontaneous emission, comparison to 87
Spontaneous emission, relation to current density 43 133 141 157—158
Stark shift 343
Strained active layers/lasers 38 72—78 84—89 198—203 329—366 367—413 448—450
Subband mixing see "Valence band structure/effects"
Substrate orientation 342 352 427 432 446
Superlattice 7 14
Switch-on delay 211
Switching, digital 210
TE polarization see "Polarization"
Thermal expansion coefficient 417
Thermal guiding 398
Thermal restivity 418 429
Threshold current/density 189—216
Threshold current/density, GaAs/AlGaAs 168—180 469—470 491
Threshold current/density, GaAs/AlGaAs, compared with (111) growth direction 330—331 359—361
Threshold current/density, GaInP/AlGaInP 430—431 438 442
Threshold current/density, InGaAs/AlGaAs 393—397
Threshold current/density, InGaAs/InGaAsP 347—351
Threshold current/density, InGaAsP/GaAs 304 313
Threshold current/density, InGaAsP/InP 309
Threshold current/density, temperature dependence see "Characteristic temperature"
TM polarization see "Polarization"
TM-mode lasers 449
transitions see also "Matrix element"
Transitions, allowed and forbidden 8 31 81
Transitions, band edge strength of 55
Transitions, higher lying quantum states 319
Transitions, localized 30
Transitions, net rate of downward 35
Transitions, spin-degenerate 50
Transparency 38 89 91 125 168 193 396 429 443 448 469
Transport, carrier 229—236
Tunable laser, gain lever 262
Tunneling 7 14
Urbach tail 121
Valence band structure/effects 32 35 44 57 63—78 329—366
Vertical emitting lasers 203
Zero-bias modulation 211
|
|
|
Ðåêëàìà |
|
|
|