The perpetual scaling of complementary metal–oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large- scale integration (VLSI) circuit-design techniques and system architectures. According to ITRS, Intel’s next-generation i8 billion transistor processors have set out to achieve an industry-leading performance of the order of GHz. This trend is expected to continue in future also but will require breakthroughs in the VLSI and post-CMOS technologies, generally known as nanoelectronics. With the develop- ment of novel materials and nanoscale devices, research is being directed to gain better physical insights of the parameters that influence the device, circuit, and system characteristics. This book titled, VLSI and Post-CMOS Electronics, Volume 1: Design, modelling and simulation is written by such leading researchers in the respective areas of nanoelectronic devices, 3-D integratedcircuits (ICs), spintronics, transparent electronics, and other relevant areas. The 29 chapters of this two volume book are classified under six sections that cover modelling and applications of electronic, magnetic and compound semiconductors devices in post- CMOS circuits and systems. These two comprehensive volumes eloquently present the potential nanoelectronic materials, devices and their circuits from the per- spective of challenges, applications and future demands. The book shall serve as an invaluable reference guide for graduate students (Ph.D./M.S./M.Tech.), researchers and practicing engineers working in the frontier areas of modelling and design of VLSI and post-CMOS devices and circuits.