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Название: Physics of Semiconductor Devices
Авторы: Sze S. M., Kwok K. N.
In this Third Edition of Physics of Semiconductor Devices, over 50% of the material has been revised or updated, and the material has been totally reorganized. We have retained the basic physics of classic devices and added many sections that are of contemporary interest such as the three-dimensional MOSFETs, nonvolatile memory, modulation-doped field-effect transistor, single-electron transistor, resonant-tunneling diode, insulated-gate bipolar transistor, quantum cascade laser, semiconductor sensors, and so on. On the other hand, we have omitted or reduced sections of lessimportant topics to maintain the overall book length.
We have added a problem set at the end of each chapter. The problem set forms an integral part of the development of the topics, and some problems can be used as worked examples in the classroom. A complete set of detailed solutions to all end-ofchapter problems has been prepared.