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Название: RF and Microwave Modeling and Measurement Techniques for Compound Field Effect Transistors
Автор: Gao J.
Аннотация:
This book is an introduction to microwave and RF signal modeling and measurement techniques for field effect transistors. It assumes only a basic course in electronic circuits and prerequisite knowledge for readers to apply the techniques and improve the performance of integrated circuits, reduce design cycles and increase their chance at first time success. The first chapters offer a general overview and discussion of microwave signal and noise matrices, and microwave measurement techniques. The following chapters address modeling techniques for field effect transistors and cover models such as small signal, large signal, noise, and the artificial neural network based. This book is intended to serve as a reference book for practicing engineers and technicians working in the areas of RF, microwave and solid-state device, optoelectronic integrated circuit design. The book should also be useful as a text-book for RF and microwave courses designed for senior undergraduate and first-year graduate students.