Нашли опечатку? Выделите ее мышкой и нажмите Ctrl+Enter
Название: Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP
Автор: Adachi S.
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries. Content: Chapter 1 Introduction (pages 1–3): Chapter 2 Structural Properties (pages 4–16): Chapter 3 Mechanical, Elastic, and Lattice Vibrational Properties (pages 17–47): Chapter 4 Thermal Properties (pages 48–62): Chapter 5 Collective Effects and Some Response Characteristics (pages 63–74): Chapter 6 Electronic Energy?Band Structure (pages 75–117): Chapter 7 Electron and Hole Deformation Potentials (pages 118–134): Chapter 8 Optical Properties (pages 135–192): Chapter 9 Elastooptic and Electrooptic Effect (pages 193–222): Chapter 10 Carrier Transport Properties (pages 223–262): Chapter 11 Strain Problems in InGaAs(P)?Based Heterostructures (pages 263–286): Chapter 12 Concluding Remarks (pages 287–288):