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Название: Nonlinear Transistor Model Parameter Extraction Techniques
Авторы: Rudolph M., Fager C., Root D.
Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.