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Tewksbury S., Brewer J. — Nonvolatile Memory Technologies with Emphasis on Flash: A Comprehensive Guide to Understanding and Using NVM Devices
Tewksbury S., Brewer J. — Nonvolatile Memory Technologies with Emphasis on Flash: A Comprehensive Guide to Understanding and Using NVM Devices



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Название: Nonvolatile Memory Technologies with Emphasis on Flash: A Comprehensive Guide to Understanding and Using NVM Devices

Авторы: Tewksbury S., Brewer J.

Аннотация:

Presented here is an all-inclusive treatment of Flash technology, including Flash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. The book begins with a tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it covers all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.Content:
Chapter 1 Introduction to Nonvolatile Memory (pages 1–18): Mr. Joe E. Brewer
Chapter 2 Flash Memory Applications (pages 19–62): Gary Forni, Collin Ong, Christine Rice, Ken McKee and Ronald J. Bauer
Chapter 3 Memory Circuit Technologies (pages 63–128): Giulio G. Marotta, Giovanni Naso and Giuseppe Savarese
Chapter 4 Physics of Flash Memories (pages 129–177): J. Van Houdt, R. Degraeve, G. Groeseneken and H. E. Maes
Chapter 5 NOR Flash Stacked and Split?Gate Memory Technology (pages 179–222): Stephen N. Keeney, Dr. Manzur Gill and David Sweetman
Chapter 6 NAND Flash Memory Technology (pages 223–311): Koji Sakui and Kang?deog Suh
Chapter 7 DINOR Flash Memory Technology (pages 313–336): Moriyoshi Nakashima and Natsuo Ajika
Chapter 8 P?Channel Flash Memory Technology (pages 337–371): Frank Ruei?Ling Lin and Charles Ching?Hsiang Hsu
Chapter 9 Embedded Flash Memory (pages 373–405): Chang?Kiang (Clinton) Kuo and Ko?Min Chang
Chapter 10 Tunnel Dielectrics for Scaled Flash Memory Cells (pages 407–444): T. P. Ma
Chapter 11 Flash Memory Reliability (pages 445–590): Jian Justin Chen, Neal R. Mielke and Chenming Calvin Hu
Chapter 12 Multilevel Cell Digital Memories (pages 591–616): Albert Fazio and Mark Bauer
Chapter 13 Alternative Memory Technologies (pages 617–740): Gary F. Derbenwick and Mr. Joe E. Brewer


Язык: en

Рубрика: Разное/

Статус предметного указателя: Неизвестно

ed2k: ed2k stats

Год издания: 2008

Количество страниц: 779

Добавлена в каталог: 26.03.2017

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