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Название: Electrochemistry of Silicon and Its Oxide
Автор: Zhang X.
`Silicon and the technology based upon it have affected our way of life more dramatically than any other substance. One may claim we are living in the 'silicon age'. The chemical and electrochemical properties of silicon, especially the growth and stability of its oxide, are critical to its use. This book, Electrochemistry of Silicon and its Oxide, is an excellent, comprehensive summary of the electrochemical properties of silicon. It contains the fundamentals of semiconductor electrochemistry followed by an extensive presentation of silicon electrochemistry and reactions. Much has been learned about the rate and mechanism of silicon reactions from electrochemical studies, especially the growth and dissolution of silicon dioxide. The book also presents the photoelectrochemistry of silicon, and the formation and properties of porous silicon, one of the most intensely studied materials of our time. This book is a great resource and essential reading for scientists and engineers investigating electrochemical or surface reactions of silicon, or the formation and dissolution of silicon oxide.' Paul A. Kohl, Regents' Professor, Editor, Journal of The Electrochemical Society, Georgia Institute of Technology