Нашли опечатку? Выделите ее мышкой и нажмите Ctrl+Enter
Название: Resonant gate drive techniques for power MOSFETs
Автор: Chen Y.
With the use of the simplistic equivalent circuits, loss mechanism in conventionalpower MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) gate drive circuitsis analyzed. Resonant gate drive techniques are investigated and a new resonant gatedrive circuit is presented. The presented circuit adds minor complexity to conventionalgate drivers but reduces the MOSFET gate drive loss very effectively. To further expand its use in driving Half-Bridge MOSFETs, another circuit is proposed in this thesis. The later circuit simplifies the isolation circuitry for the top MOSFET and meanwhileconsumes much lower power than conventional gate drivers.