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Название: Semiconductors and Semimetals: Deep Levels, GaAs, Alloys, Photochemistry
Авторы: Beer A.C., Willardson R.K.
This treatise reflects the rapid growth in the field of semiconductors and semimetals. Chapters 1 and 2 of the present volume are concerned with deep levels in wide band-gap III-V compounds and the measurement techniques used to characterize such levels. These chapters provide a background for the next volume, which will address the use of semiinsulating GaAs in digital and microwave integrated circuits (ICs) as well as providing valuable insight into methods of improving solar cells, lasers, and light-emitting diodes (LEDs). Chapter 3 in the present volume is concerned with thermodynamic modeling to improve Hg-Cd-Te phase diagrams applicable to the infrared detector arrays discussed in Volume 18 of this treatise. Chapter 4 treats photoelectrochemistry (PEC), an emerging technology.