Journal of Statistical Physics, Vol. 49, Nos. 3/4, 1987. p. 855-858.
We investigate the kinetics of domain growth in the three-dimensional Ising model with quenched random site dilution, using Monte Carlo simulation technique. A crossover from the power law growth regime to a much slower
growth observed in our simulation is interpreted through the roughening of the interfaces by the quenched impurities. The results are also compared with the corresponding results in two dimensions.